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    • 1. 发明授权
    • Manufacturing method of liquid crystal display device
    • 液晶显示装置的制造方法
    • US08377765B2
    • 2013-02-19
    • US13067281
    • 2011-05-20
    • Hideo TanabeMasaru TakabatakeToshiki KanekoAtsushi HasegawaHiroko Sehata
    • Hideo TanabeMasaru TakabatakeToshiki KanekoAtsushi HasegawaHiroko Sehata
    • H01L21/00
    • G02F1/133345G02F1/133305G02F1/133504G02F1/133555G02F1/134363G02F1/136213G02F1/136227G02F1/1368G02F2001/13685H01L27/124H01L27/1248H01L29/78675
    • The present invention provides a liquid crystal display device having a large holding capacitance in the inside of a pixel. A liquid crystal display device includes a first substrate, a second substrate arranged to face the first substrate in an opposed manner, and liquid crystal sandwiched between the first substrate and the second substrate. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode thereof connected to the video signal line and a second electrode thereof connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film formed above the first silicon nitride film, a capacitance electrode formed above the organic insulation film, and a second silicon nitride film formed above the capacitance electrode and below the pixel electrode. The second silicon nitride film is a film which is formed at a temperature lower than a forming temperature of the first silicon nitride film. The first silicon nitride film and the second silicon nitride film form a contact hole therein by etching both of the first silicon nitride film and the second silicon nitride film collectively by dry etching. The second electrode and the pixel electrode are connected to each other via the contact hole. A potential different from a potential applied to the pixel electrode is applied to the capacitance electrode, and a holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.
    • 本发明提供一种在像素内部具有大的保持电容的液晶显示装置。 液晶显示装置包括第一基板,以相对的方式与第一基板相对地布置的第二基板和夹在第一基板和第二基板之间的液晶。 第一基板包括视频信号线,像素电极,具有连接到视频信号线的第一电极的薄膜晶体管和连接到像素电极的第二电极,形成在第二电极上方的第一氮化硅膜, 形成在第一氮化硅膜上方的有机绝缘膜,形成在有机绝缘膜上方的电容电极和形成在电容电极上方和像素电极下方的第二氮化硅膜。 第二氮化硅膜是在低于第一氮化硅膜的形成温度的温度下形成的膜。 第一氮化硅膜和第二氮化硅膜通过干法蚀刻同时蚀刻第一氮化硅膜和第二氮化硅膜两者而形成接触孔。 第二电极和像素电极经由接触孔相互连接。 将施加到像素电极的电位不同的电位施加到电容电极,并且由像素电极,第二氮化硅膜和电容电极形成保持电容。
    • 4. 发明申请
    • Liquid crystal display device
    • 液晶显示装置
    • US20090079890A1
    • 2009-03-26
    • US12232791
    • 2008-09-24
    • Hideo TanabeMasaru TakabatakeManabu Yamashita
    • Hideo TanabeMasaru TakabatakeManabu Yamashita
    • G02F1/1368
    • G02F1/1368G02F1/133345G02F1/1337G02F2201/50H01L27/124H01L27/1288
    • (Object) To take measures against defects in the conduction by preventing shavings of the orientation film from getting into the terminal portion for liquid crystal display devices using an organic passivation film on a TFT substrate.(Means for Achieving Object) Image signal lines 107 extend to a terminal portion. The image signal lines 107, excluding the terminal portion, are covered with an inorganic passivation film 108 and an organic passivation film 109. In the terminal portion, terminal portion through holes are created in the organic passivation film 109 and the inorganic passivation film 108, in order to make electrical connection possible. The terminal portion is covered with an ITO film 120 in order to protect the video signal lines 107. The taper angle θ in the organic passivation film 109 in the terminal portion through holes is 35 degrees or less, and the thickness of the organic passivation film 109 in the periphery of the terminal portion through holes is 300 nm to 600 nm, so that shavings of the orientation film can be prevented from getting into the terminal portion, and thus, defects in the conduction can be prevented.
    • (物体)通过防止取向膜的刮削进入用于在TFT基板上使用有机钝化膜的液晶显示装置的端子部分来进行导通的缺陷的措施。 (实现对象的手段)图像信号线107延伸到终端部分。 除了端子部分之外的图像信号线107被无机钝化膜108和有机钝化膜109覆盖。在端子部分中,在有机钝化膜109和无机钝化膜108中形成端子部分通孔, 以使电气连接成为可能。 端子部分被ITO膜120覆盖以保护视频信号线107.端子部分通孔中的有机钝化膜109中的锥角θ为35度以下,有机钝化膜的厚度 109在端子部贯通孔的周围为300nm〜600nm,能够防止取向膜的切屑进入端子部,能够防止导通缺陷。
    • 6. 发明申请
    • Manufacturing method of liquid crystal display device
    • 液晶显示装置的制造方法
    • US20100227425A1
    • 2010-09-09
    • US12662961
    • 2010-05-13
    • Hideo TanabeMasaru TakabatakeToshiki KanekoAtsushi HasegawaHiroko Sehata
    • Hideo TanabeMasaru TakabatakeToshiki KanekoAtsushi HasegawaHiroko Sehata
    • H01L21/04
    • G02F1/133345G02F1/133305G02F1/133504G02F1/133555G02F1/134363G02F1/136213G02F1/136227G02F1/1368G02F2001/13685H01L27/124H01L27/1248H01L29/78675
    • The present invention provides a liquid crystal display device having a large holding capacitance in the inside of a pixel. A liquid crystal display device includes a first substrate, a second substrate arranged to face the first substrate in an opposed manner, and liquid crystal sandwiched between the first substrate and the second substrate. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode thereof connected to the video signal line and a second electrode thereof connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film formed above the first silicon nitride film, a capacitance electrode formed above the organic insulation film, and a second silicon nitride film formed above the capacitance electrode and below the pixel electrode. The second silicon nitride film is a film which is formed at a temperature lower than a forming temperature of the first silicon nitride film. The first silicon nitride film and the second silicon nitride film form a contact hole therein by etching both of the first silicon nitride film and the second silicon nitride film collectively by dry etching. The second electrode and the pixel electrode are connected to each other via the contact hole. A potential different from a potential applied to the pixel electrode is applied to the capacitance electrode, and a holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.
    • 本发明提供一种在像素内部具有大的保持电容的液晶显示装置。 液晶显示装置包括第一基板,以相对的方式与第一基板相对地布置的第二基板和夹在第一基板和第二基板之间的液晶。 第一基板包括视频信号线,像素电极,具有连接到视频信号线的第一电极的薄膜晶体管和连接到像素电极的第二电极,形成在第二电极上方的第一氮化硅膜, 形成在第一氮化硅膜上方的有机绝缘膜,形成在有机绝缘膜上方的电容电极和形成在电容电极上方和像素电极下方的第二氮化硅膜。 第二氮化硅膜是在低于第一氮化硅膜的形成温度的温度下形成的膜。 第一氮化硅膜和第二氮化硅膜通过干法蚀刻同时蚀刻第一氮化硅膜和第二氮化硅膜两者而形成接触孔。 第二电极和像素电极经由接触孔相互连接。 将施加到像素电极的电位不同的电位施加到电容电极,并且由像素电极,第二氮化硅膜和电容电极形成保持电容。
    • 7. 发明授权
    • Liquid crystal display device
    • 液晶显示装置
    • US07760281B2
    • 2010-07-20
    • US12232791
    • 2008-09-24
    • Hideo TanabeMasaru TakabatakeManabu Yamashita
    • Hideo TanabeMasaru TakabatakeManabu Yamashita
    • G02F1/1368
    • G02F1/1368G02F1/133345G02F1/1337G02F2201/50H01L27/124H01L27/1288
    • To take measures against defects in the conduction by preventing shavings of the orientation film from getting into the terminal portion for liquid crystal display devices using an organic passivation film on a TFT substrate.Image signal lines 107 extend to a terminal portion. The image signal lines 107, excluding the terminal portion, are covered with an inorganic passivation film 108 and an organic passivation film 109. In the terminal portion, terminal portion through holes are created in the organic passivation film 109 and the inorganic passivation film 108, in order to make electrical connection possible. The terminal portion is covered with an ITO film 120 in order to protect the video signal lines 107. The taper angle θ in the organic passivation film 109 in the terminal portion through holes is 35 degrees or less, and the thickness of the organic passivation film 109 in the periphery of the terminal portion through holes is 300 nm to 600 nm, so that shavings of the orientation film can be prevented from getting into the terminal portion, and thus, defects in the conduction can be prevented.
    • 通过防止在TFT基板上使用有机钝化膜的液晶显示装置的取向膜的切屑进入端子部,来进行导通的缺陷的措施。 图像信号线107延伸到端子部分。 除了端子部分之外的图像信号线107被无机钝化膜108和有机钝化膜109覆盖。在端子部分中,在有机钝化膜109和无机钝化膜108中形成端子部分通孔, 以使电气连接成为可能。 端子部分被ITO膜120覆盖,以保护视频信号线107。 在端子部通孔中的有机钝化膜109中为35度以下,端子部贯通孔周围的有机钝化膜109的厚度为300nm〜600nm,因此取向膜 可以防止其进入端子部分,从而可以防止导通缺陷。