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1. 发明专利

JP2005245695A Diaper and excretion detector 审中-公开
标题翻译： DIAPER和EXCRETION检测器
公开(公告)号：JP2005245695A
公开(公告)日：2005-09-15
申请号：JP2004059264
申请日：2004-03-03
申请人： Masanobu Kato , 昌伸加藤
发明人： KATO MASANOBU
IPC分类号： A61F13/42 , A61F5/44 , A61F13/15 , A61F13/49
摘要： PROBLEM TO BE SOLVED: To provide a diaper with an excretion detecting function capable of taking a measure against a diaper rash and easily confirming the presence / absence of excretion even in the case that a person wearing the diaper has clothes on.
SOLUTION: A substance which absorbs moisture and discharges gases is made to absorb the moisture of feces and urine and discharge the gas and the skin is quickly dried. Also, by utilizing the gas and inflating an air bag equipped on the diaper, the excretion is visually and tactilely detected. By mounting a a whistle on the air bag, the excretion can be detected auditorily as well.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种具有排尿检测功能的尿布，其能够对尿布疹进行测量，并且即使在穿着尿布的人有衣服的情况下也容易确认排泄物的存在/不存在。
解决方案：吸收水分和排出气体的物质被吸收粪便和尿液的水分，排出气体，皮肤迅速干燥。此外，通过利用气体并对装在尿布上的气囊进行充气，可以视觉和触觉地检测排泄物。通过在气囊上安装口哨，也可以听觉地检测排泄物。版权所有（C）2005，JPO＆NCIPI

2. 发明授权

US07323515B2 Sealing composition and seals made by using the same 失效
标题翻译：使用相同的密封组合物和密封
公开(公告)号：US07323515B2
公开(公告)日：2008-01-29
申请号：US10497035
申请日：2002-11-29
申请人： Kazunori Hayashida , Takehisa Kida , Kazutoshi Yamamoto , Tomotaka Nakagawa , Takahiro Yamagishi , Masanobu Kato
发明人： Kazunori Hayashida , Takehisa Kida , Kazutoshi Yamamoto , Tomotaka Nakagawa , Takahiro Yamagishi , Masanobu Kato
IPC分类号： C08L27/12 , C08L79/08
CPC分类号： C09K3/1009 , C09K2200/0667
摘要： The invention relates to a sealing composition which comprises a crosslinkable fluoroelastomer, a crosslinking agent for this elastomer and a reinforcing polyimide resin powder; and seals such as O-rings, made by molding the composition into a prescribed shape and crosslinking the molded article. According to the invention, seals free from metals and sulfur can be made from a fluoroelastomer suitable for the production unit for semiconductor devices without a scatter of physical properties within one seal or among seals, and the obtained seals are lowered in the compression set determined ate the same hardness level to cause little permanent set by compression in use, thus having a prolonged service life.
摘要翻译：本发明涉及一种密封组合物，其包含可交联的含氟弹性体，该弹性体的交联剂和增强聚酰亚胺树脂粉末; 以及通过将组合物成型为规定形状并使成型体交联而制成的O形密封件等。根据本发明，不含金属和硫的密封件可以由适用于半导体器件的生产单元的含氟弹性体制成，而不会在一个密封件内或密封件之间物理性质的散射，并且所获得的密封件在确定的压缩永久变形中降低相同的硬度水平在使用中通过压缩导致很少的永久变形，因此具有延长的使用寿命。

3. 发明申请

US20050054753A1 Sealing composition and seals made by using the same 失效
标题翻译：使用相同的密封组合物和密封
公开(公告)号：US20050054753A1
公开(公告)日：2005-03-10
申请号：US10497035
申请日：2002-11-29
申请人： Kazunori Hayashida , Takehisa Kida , Kazutoshi Yamamoto , Tomotaka Nakagawa , Takahiro Yamagishi , Masanobu Kato
发明人： Kazunori Hayashida , Takehisa Kida , Kazutoshi Yamamoto , Tomotaka Nakagawa , Takahiro Yamagishi , Masanobu Kato
IPC分类号： F16J15/10 , C08K5/00 , C08L27/12 , C08L79/08 , C09K3/10 , H01L23/29 , H01L23/31 , C08K7/16
CPC分类号： C09K3/1009 , C09K2200/0667
摘要： The invention relates to a sealing composition which comprises a crosslinkable fluoroelastomer, a crosslinking agent for this elastomer and a reinforcing polyimide resin powder; and seals such as O-rings, made by molding the composition into a prescribed shape and crosslinking the molded article. According to the invention, seals free from metals and sulfur can be made from a fluoroelastomer suitable for the production unit for semiconductor devices without a scatter of physical properties within one seal or among seals, and the obtained seals are lowered in the compression set determined ate the same hardness level to cause little permanent set by compression in use, thus having a prolonged service life.
摘要翻译：本发明涉及一种密封组合物，其包含可交联的含氟弹性体，该弹性体的交联剂和增强聚酰亚胺树脂粉末; 以及通过将组合物成型为规定形状并使成型体交联而制成的O形密封件等。根据本发明，不含金属和硫的密封件可以由适用于半导体器件的生产单元的含氟弹性体制成，而不会在一个密封件内或密封件之间物理性质的散射，并且所获得的密封件在确定的压缩永久变形中降低相同的硬度水平在使用中通过压缩导致很少的永久变形，因此具有延长的使用寿命。

4. 发明授权

US06396117B1 Semiconductor photodetector, method for manufacturing semiconductor photodetector and photodetector module 有权
标题翻译：半导体光电检测器，半导体光电检测器和光电检测器模块的制造方法
公开(公告)号：US06396117B1
公开(公告)日：2002-05-28
申请号：US09246143
申请日：1999-02-08
申请人： Ryozo Furukawa , Masanobu Kato
发明人： Ryozo Furukawa , Masanobu Kato
IPC分类号： H01L3100
CPC分类号： H01L31/101 , G02B6/4204 , H01L31/02161 , H01L31/02162
摘要： Light on the longer wavelength side can be photoelectrically converted and output reliably, whilst improving the structural and operational reliability of a photodetector, by means of a simple manufacturing process and inexpensive manufacturing costs. A first light-absorbing layer, a buffer layer of a second conductivity type, a second light-absorbing layer of a second conductivity type and a window layer of a second conductivity type are laminated in this order onto the first principal surface of a substrate of a first conductivity type. The first light-absorbing layer contains a region of the first conductivity type and a region of the second conductivity type, and a diffused region of the first conductivity type having a depth extending from the upper face of the window layer to the interface between the window layer and the second light-absorbing layer is provided in a portion of the window layer. A main electrode of a first conductivity type is provided on the diffused region, whilst a main electrode of a second conductivity type is provided on the window layer in the vicinity of the diffused region. The energy gap wavelength of the second light-absorbing layer is longer than the energy gap wavelength of the first light-absorbing layer, whilst the energy gap wavelength of the first light-absorbing layer is longer than the respective energy gap wavelengths of the substrate, buffer layer and window layer.
摘要翻译：较长波长侧的光可以通过简单的制造工艺和廉价的制造成本在可改善光电检测器的结构和操作可靠性的同时光电转换和输出。将第一光吸收层，第二导电类型的缓冲层，第二导电类型的第二光吸收层和第二导电类型的窗口层依次层叠到基板的第一主表面上第一导电类型。第一光吸收层包含第一导电类型的区域和第二导电类型的区域，并且第一导电类型的扩散区域具有从窗口层的上表面延伸到窗口之间的界面的深度并且第二光吸收层设置在窗口层的一部分中。第一导电类型的主电极设置在扩散区域上，而第二导电类型的主电极设置在扩散区域附近的窗口层上。第二光吸收层的能隙波长比第一光吸收层的能隙波长长，而第一光吸收层的能隙波长比衬底的各能隙波长长，缓冲层和窗口层。

5. 发明授权

US06194771B1 Semiconductor light-receiving device having sloped groove in light receiving surface 失效
标题翻译：在光接收表面具有倾斜槽的半导体光接收装置
公开(公告)号：US06194771B1
公开(公告)日：2001-02-27
申请号：US09124071
申请日：1998-07-29
申请人： Masanobu Kato , Ryozo Furukawa
发明人： Masanobu Kato , Ryozo Furukawa
IPC分类号： H01L310236
CPC分类号： H01L31/02327 , H01L31/02161 , H01L31/105
摘要： A semiconductor light-receiving device includes a light-receiving section that receives an input light. The light-receiving section includes a light-receiving surface to which the input light is directed, a groove extending vertically into the light-receiving surface, and a thin film coated on the inside wall of the groove.
摘要翻译：半导体光接收装置包括接收输入光的光接收部。光接收部分包括输入光被引导的光接收表面，垂直延伸到光接收表面的凹槽和涂覆在凹槽的内壁上的薄膜。

6. 发明授权

US5489591A S-triazine derivative and remedy for estrogen-dependent disease containing said derivative as effective component 失效
标题翻译： S-三嗪衍生物和含有所述衍生物作为有效成分的雌激素依赖性疾病的治疗方法
公开(公告)号：US5489591A
公开(公告)日：1996-02-06
申请号：US290870
申请日：1994-08-29
申请人： Hideshi Kobayashi , Toshihiko Komatsu , Seiichi Fukuda , Yoshio Tsuchida , Masanobu Kato , Shinichi Yaguchi , Naohito Ogose , Hajime Ono , Yasuhiro Izumisawa , Masayuki Takahashi , Tsutomu Nakagane
发明人： Hideshi Kobayashi , Toshihiko Komatsu , Seiichi Fukuda , Yoshio Tsuchida , Masanobu Kato , Shinichi Yaguchi , Naohito Ogose , Hajime Ono , Yasuhiro Izumisawa , Masayuki Takahashi , Tsutomu Nakagane
IPC分类号： C07D521/00 , A61K31/53 , C07D403/04 , C07D403/14 , C07D413/04
CPC分类号： C07D231/12 , C07D233/56 , C07D249/08
摘要： s-Triazine (1,3,5-triazine) is chemically modified to obtain s-triazine derivative effective for prevention and treatment of estrogen-dependent diseases.
摘要翻译： PCT No.PCT / JP93 / 00240 Sec。 371日期：1994年8月29日 102（e）日期1994年8月29日PCT提交1993年2月26日PCT公布。公开号WO93 / 17009 日期1993年9月2日S-三嗪（1,3,5-三嗪）经化学修饰，得到有效预防和治疗雌激素依赖性疾病的s-三嗪衍生物。

7. 发明授权

US06483098B1 Side-illuminated type semiconductor photodetector device and method of manufacturing the same 有权
标题翻译：侧照式半导体光电检测器及其制造方法
公开(公告)号：US06483098B1
公开(公告)日：2002-11-19
申请号：US09447437
申请日：1999-11-23
申请人： Masanobu Kato , Ryozo Furukawa
发明人： Masanobu Kato , Ryozo Furukawa
IPC分类号： H01L3100
CPC分类号： H01L31/105 , G02B6/4214 , H01L21/30617 , H01L31/02327 , H01L31/035281 , Y02E10/50
摘要： In a semiconductor photodetector device having a slanting surface, an insulating film is formed over the slating surface as a reflective film under the condition that light is all reflected. Thus, a semiconductor device can be implemented which is high in sensibility and excellent in adhesion.
摘要翻译：在具有倾斜面的半导体光电检测器件中，在光全部被反射的条件下，在作为反射膜的板状表面上形成绝缘膜。因此，可以实现敏感性高，粘附性优异的半导体器件。

8. 发明授权

US06399968B2 Semiconductor photoreceiving device 有权
公开(公告)号：US06399968B2
公开(公告)日：2002-06-04
申请号：US09732728
申请日：2000-12-11
申请人： Masanobu Kato , Ryozo Furukawa
发明人： Masanobu Kato , Ryozo Furukawa
IPC分类号： H01L31072
CPC分类号： H01L31/02165 , H01L31/1035 , H01L31/105 , H01L31/109
摘要： The present invention provides a photoreceiving device that is inexpensive and has good properties as a photoreceiving device for selectively receiving long wavelength light. This is a semiconductor photoreceiving device 10 for selectively receiving long wavelength light from multiplexed light including long wavelength light A and short wavelength light B. This photoreceiving device comprises a multilayered film 22 comprising alternately stacked layers of materials having mutually different indexes of refraction and the thicknesses and number of which are designed so as to transmit said long wavelength light and reflect said short wavelength light; and a first light-absorbing layer 14 composed of a material having a band gap wavelength longer than the wavelength of said long wavelength light.

9. 发明授权

US06246097B1 Semiconductor photodetector 有权
标题翻译：半导体光电探测器
公开(公告)号：US06246097B1
公开(公告)日：2001-06-12
申请号：US09187001
申请日：1998-11-06
申请人： Masanobu Kato , Ryozo Furukawa
发明人： Masanobu Kato , Ryozo Furukawa
IPC分类号： H01L310232
CPC分类号： H01L27/14643 , H01L27/14685
摘要： At a semiconductor photodetector 100, a photodetection portion 120 is formed on a first substrate surface 110a of a substrate 110. In addition, a recess 110d is formed at a second substrate surface 110b of the substrate 110 which faces opposite the first substrate surface 110a. This recessed portion 110d is formed as a wedge-type V-shaped groove with a forward mesa surface formed at a front surface thereof, and is formed approximately parallel to a side photodetection surface 110c of the substrate 110 which is approximately perpendicular to the second substrate surface 110b. A total reflection film is coated on the front surface of the recess 110d. In the semiconductor photodetector 100 structured as described above, an incoming light P1 entering through the side photodetection surface 110c is reflected at the recess 110d to enter the photodetection portion 120 from the side where the substrate 110 is provided. As a result, the incoming light P1 is sensed at the photodetection portion 120.
摘要翻译：在半导体光电检测器100处，在基板110的第一基板表面110a上形成光电检测部分120.此外，在基板110的与第一基板表面110a相对的第二基板表面110b处形成凹槽110d。该凹部110d形成为在其前表面形成有前台面的楔形V形槽，并且大致平行于基板110的与第二基板垂直的侧面光检测面110c 表面110b。全反射膜涂覆在凹槽110d的前表面上。在如上所述构成的半导体光检测器100中，通过侧光检测面110c入射的入射光P1在凹部110d处被反射，从设置有基板110的一侧进入光检测部120。结果，入射光P1在光电检测部分120处被感测。

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