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1. 发明授权

US07300909B2 Superconducting circuit 失效
标题翻译：超导电路
公开(公告)号：US07300909B2
公开(公告)日：2007-11-27
申请号：US10809919
申请日：2004-03-26
申请人： Tsunehiro Hato , Masahiro Horibe , Keiichi Tanabe
发明人： Tsunehiro Hato , Masahiro Horibe , Keiichi Tanabe
IPC分类号： H01B1/00
CPC分类号： H01L39/225 , H01L27/18
摘要： A first Josephson junction in a Single Flux Quantum circuit (SFQ circuit) and a second Josephson junction in an interface circuit (latch driver circuit) are formed with junction materials different from each other, and the junction materials are selected so that the hysteresis of the first Josephson junction in a current-voltage characteristic is smaller than the hysteresis of the second Josephson junction in a current-voltage characteristic.
摘要翻译：单通道量子电路（SFQ电路）中的第一个约瑟夫逊结和接口电路（锁存驱动器电路）中的第二个约瑟夫逊结形成为具有彼此不同的连接材料，并且连接材料被选择为使得电流 - 电压特性中的第一约瑟夫逊结小于电流 - 电压特性中第二约瑟夫逊结的滞后。

2. 发明申请

US20050231196A1 Superconducting driver circuit 失效
标题翻译：超导驱动电路
公开(公告)号：US20050231196A1
公开(公告)日：2005-10-20
申请号：US10519719
申请日：2003-08-05
申请人： Yoshinobu Tarutani , Masahiro Horibe , Keiichi Tanabe
发明人： Yoshinobu Tarutani , Masahiro Horibe , Keiichi Tanabe
IPC分类号： H01L39/22 , H03F19/00 , H03K17/92 , H03K19/195 , G01R33/02
CPC分类号： H03K19/1954 , Y10S505/846
摘要： To obtain a superconducting driver circuit which can obtain an output voltage of several millvolts or above, can use a DC power source as a driving power source, can form no capacitance between it and a ground plane, and has a small occupation area, the superconducting driver circuit is constructed by superconducting flux quantum interference devices (SQUIDs) each constructing a closed loop having as components two superconducting junctions and an inductor. The SQUIDs share the inductors and are connected in series in three or more stages.
摘要翻译：为了获得能够获得几毫伏以上的输出电压的超导驱动电路，可以使用直流电源作为驱动电源，可以在其与地平面之间形成电容，占空比小，超导驱动器电路由超导通量量子干涉装置（SQUID）构成，每个构造一个闭环，该闭环具有两个超导结和电感。 SQUIDs共享电感器，并在三个或更多个阶段串联连接。

3. 发明申请

US20060247131A1 High-temperature superconducting device and manufacturing method thereof 审中-公开
标题翻译：高温超导装置及其制造方法
公开(公告)号：US20060247131A1
公开(公告)日：2006-11-02
申请号：US11331179
申请日：2006-01-13
申请人： Masahiro Horibe , Hideo Suzuki , Yoshihiro Ishimaru , Hironori Wakana , Keiichi Tanabe
发明人： Masahiro Horibe , Hideo Suzuki , Yoshihiro Ishimaru , Hironori Wakana , Keiichi Tanabe
IPC分类号： H01L39/22 , H01L29/06
CPC分类号： H01L27/18 , H01L39/2496
摘要： At least two ramp-edge-structure Josephson junctions having different critical current densities to one another are provided on a substrate.
摘要翻译：在衬底上提供具有彼此具有不同临界电流密度的至少两个斜坡边缘结构约瑟夫逊结。

4. 发明授权

US07095227B2 Superconducting driver circuit 失效
标题翻译：超导驱动电路
公开(公告)号：US07095227B2
公开(公告)日：2006-08-22
申请号：US10519719
申请日：2003-08-05
申请人： Yoshinobu Tarutani , Masahiro Horibe , Keiichi Tanabe
发明人： Yoshinobu Tarutani , Masahiro Horibe , Keiichi Tanabe
IPC分类号： G01R33/02
CPC分类号： H03K19/1954 , Y10S505/846
摘要： To obtain a superconducting driver circuit which can obtain an output voltage of several millvolts or above, can use a DC power source as a driving power source, can form no capacitance between it and a ground plane, and has a small occupation area, the superconducting driver circuit is constructed by superconducting flux quantum interference devices (SQUIDs) each constructing a closed loop having as components two superconducting junctions and an inductor. The SQUIDs share the inductors and are connected in series in three or more stages.
摘要翻译：为了获得能够获得几毫伏以上的输出电压的超导驱动电路，可以使用直流电源作为驱动电源，可以在其与地平面之间形成电容，占空比小，超导驱动器电路由超导通量量子干涉装置（SQUID）构成，每个构造一个闭环，该闭环具有两个超导结和电感。 SQUIDs共享电感器，并在三个或更多个阶段串联连接。

5. 发明申请

US20050215049A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050215049A1
公开(公告)日：2005-09-29
申请号：US10972770
申请日：2004-10-26
申请人： Masahiro Horibe , Akio Kawabata , Mizuhisa Nihei
发明人： Masahiro Horibe , Akio Kawabata , Mizuhisa Nihei
IPC分类号： H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/4763 , H01L21/768 , H01L23/532
CPC分类号： H01L21/76885 , B82Y10/00 , H01L21/28562 , H01L21/76879 , H01L21/76898 , H01L23/481 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , Y10S257/914 , H01L2924/00
摘要： A method of manufacturing a semiconductor device having an interconnection part formed of multiple carbon nanotubes is disclosed. The method includes the steps of (a) forming a growth mode control layer controlling the growth mode of the carbon nanotubes, (b) forming a catalyst layer on the growth mode control layer, and (c) causing the carbon nanotubes to grow by heating the catalyst layer by thermal CVD so that the carbon nanotubes serve as the interconnection part. The growth mode control layer is formed by sputtering or vacuum deposition in an atmospheric gas, using a metal selected from a group of Ti, Mo, V, Nb, and W. The growth mode is controlled in accordance with a predetermined concentration of oxygen gas of the atmospheric gas.
摘要翻译：公开了一种制造具有由多个碳纳米管形成的互连部件的半导体器件的方法。该方法包括以下步骤：（a）形成控制碳纳米管生长模式的生长模式控制层，（b）在生长模式控制层上形成催化剂层，和（c）通过加热使碳纳米管生长催化剂层通过热CVD，使得碳纳米管用作互连部分。通过使用选自Ti，Mo，V，Nb和W的金属的气氛中的溅射或真空沉积来形成生长模式控制层。根据预定浓度的氧气来控制生长模式的大气。

6. 发明申请

US20050212014A1 Semiconductor device and semiconductor sensor 审中-公开
标题翻译：半导体器件和半导体传感器
公开(公告)号：US20050212014A1
公开(公告)日：2005-09-29
申请号：US10971699
申请日：2004-10-25
申请人： Masahiro Horibe , Naoki Harada , Yoshitaka Yamaguchi
发明人： Masahiro Horibe , Naoki Harada , Yoshitaka Yamaguchi
IPC分类号： B82B1/00 , B82B3/00 , G01N27/414 , H01L21/336 , H01L29/06 , H01L29/76 , H01L29/786 , H01L51/00 , H01L51/30
CPC分类号： B82Y10/00 , G01N27/4146 , H01L51/0048 , H01L51/0052 , H01L51/0545
摘要： A semiconductor device includes a substrate; a gate electrode formed on the substrate; a gate insulating film covering the gate electrode; a carbon nanotube disposed above the gate electrode and coming in contact with the gate insulating film; and a source electrode and a drain electrode formed apart from one another in a longitudinal direction of the carbon nanotube.
摘要翻译：半导体器件包括衬底; 形成在所述基板上的栅电极; 覆盖栅电极的栅极绝缘膜; 设置在栅电极上方并与栅极绝缘膜接触的碳纳米管; 以及在碳纳米管的长度方向上彼此分开形成的源电极和漏电极。

7. 发明授权

US07948081B2 Carbon nanotube structure, a semiconductor device, a semiconductor package and a manufacturing method of a semiconductor device 有权
标题翻译：碳纳米管结构，半导体器件，半导体封装以及半导体器件的制造方法
公开(公告)号：US07948081B2
公开(公告)日：2011-05-24
申请号：US11041891
申请日：2005-01-25
申请人： Akio Kawabata , Mizuhisa Nihei , Masahiro Horibe
发明人： Akio Kawabata , Mizuhisa Nihei , Masahiro Horibe
IPC分类号： H01L23/52
CPC分类号： H01L21/76879 , B82Y10/00 , H01L21/76805 , H01L23/3128 , H01L23/373 , H01L23/4827 , H01L23/485 , H01L23/49816 , H01L23/5226 , H01L23/53276 , H01L24/32 , H01L2221/1094 , H01L2224/16225 , H01L2224/16235 , H01L2224/32057 , H01L2224/73253 , H01L2224/83385 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/15153 , H01L2924/1517 , H01L2924/15174 , H01L2924/15311 , Y10S977/833 , Y10S977/936 , H01L2924/01026 , H01L2924/01028 , H01L2224/0401
摘要： A semiconductor device uses a carbon nanotube structure, which reduces an electric resistance and a thermal resistance by increasing a density of the carbon nanotubes. An insulation film covers a first electrically conductive material. A second electrically conductive material is provided on the insulation film. A plurality of carbon nanotubes extend through the insulation film by being filled in an opening part that exposes the first electrically conductive material. The carbon nanotubes electrically connect the first electrically conductive material and the second electrically conductive material to each other. Ends of the carbon nanotubes are fixed to a recessed part provided on a surface of the first electrically conductive material.
摘要翻译：半导体器件使用碳纳米管结构，其通过增加碳纳米管的密度来降低电阻和耐热性。绝缘膜覆盖第一导电材料。第二导电材料设置在绝缘膜上。多个碳纳米管通过填充在露出第一导电材料的开口部分中而延伸穿过绝缘膜。碳纳米管将第一导电材料和第二导电材料彼此电连接。碳纳米管的端部被固定到设置在第一导电材料的表面上的凹部。

8. 发明申请

US20060290003A1 Substrate structure and manufacturing method of the same 有权
标题翻译：基材的结构和制造方法相同
公开(公告)号：US20060290003A1
公开(公告)日：2006-12-28
申请号：US11180584
申请日：2005-07-14
申请人： Akio Kawabata , Mizuhisa Nihei , Masahiro Horibe , Shintaro Sato , Daiyu Kondo , Yuji Awano
发明人： Akio Kawabata , Mizuhisa Nihei , Masahiro Horibe , Shintaro Sato , Daiyu Kondo , Yuji Awano
IPC分类号： H01L23/48 , H01L21/4763
CPC分类号： H01L23/53276 , B82Y10/00 , B82Y30/00 , H01L21/28556 , H01L21/76844 , H01L21/76876 , H01L21/76879 , H01L23/4827 , H01L23/5226 , H01L51/0048 , H01L51/0595 , H01L2221/1094 , H01L2924/0002 , Y10S977/743 , H01L2924/00
摘要： A Ti film is pattern-formed on a desired portion on a silicon substrate, and a Co film is formed on the substrate so as to cover the Ti film. CNTs are formed only on a portion, under which the Ti film is formed, of the surface of the Co film at approximately 600° C. by a thermal CVD method. The length of the CNT can be controlled by adjusting the thickness of the Ti film.
摘要翻译：在硅衬底上的期望部分上形成Ti膜，并在衬底上形成Co膜以覆盖Ti膜。通过热CVD方法，在约600℃的Co膜的表面仅在形成有Ti膜的部分上形成CNT。可以通过调整Ti膜的厚度来控制CNT的长度。

9. 发明授权

US07417320B2 Substrate structure and manufacturing method of the same 有权
标题翻译：基材的结构和制造方法相同
公开(公告)号：US07417320B2
公开(公告)日：2008-08-26
申请号：US11180584
申请日：2005-07-14
申请人： Akio Kawabata , Mizuhisa Nihei , Masahiro Horibe , Shintaro Sato , Daiyu Kondo , Yuji Awano
发明人： Akio Kawabata , Mizuhisa Nihei , Masahiro Horibe , Shintaro Sato , Daiyu Kondo , Yuji Awano
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L23/53276 , B82Y10/00 , B82Y30/00 , H01L21/28556 , H01L21/76844 , H01L21/76876 , H01L21/76879 , H01L23/4827 , H01L23/5226 , H01L51/0048 , H01L51/0595 , H01L2221/1094 , H01L2924/0002 , Y10S977/743 , H01L2924/00
摘要： A Ti film is pattern-formed on a desired portion on a silicon substrate, and a Co film is formed on the substrate so as to cover the Ti film. CNTs are formed only on a portion, under which the Ti film is formed, of the surface of the Co film at approximately 600° C. by a thermal CVD method. The length of the CNT can be controlled by adjusting the thickness of the Ti film.
摘要翻译：在硅衬底上的期望部分上形成Ti膜，并在衬底上形成Co膜以覆盖Ti膜。通过热CVD方法，在约600℃的Co膜的表面仅在形成有Ti膜的部分上形成CNT。可以通过调整Ti膜的厚度来控制CNT的长度。

10. 发明授权

US07323711B2 High-temperature superconductive device 有权
标题翻译：高温超导装置
公开(公告)号：US07323711B2
公开(公告)日：2008-01-29
申请号：US10899313
申请日：2004-07-27
申请人： Hideo Suzuki , Masahiro Horibe , Keiichi Tanabe
发明人： Hideo Suzuki , Masahiro Horibe , Keiichi Tanabe
IPC分类号： H01L29/06
CPC分类号： H01L39/225 , H01L39/2496
摘要： A high-temperature superconductive device is disclosed, including a ramp-edge junction. The ramp-edge junction includes a first electrode layer (5) that defines the size of the ramp-edge junction and a second electrode layer (6). The width of the second electrode layer (6) is greater than the width of the first electrode layer (5). The first electrode layer (5) and the second electrode layer (6) touch in part, and are separated via a first insulation layer (7) in remaining part. Because the ramp-edge junction includes the first electrode layer (5) and the second electrode layer (6), the inductance of the ramp-edge junction can be reduced with the critical current density Jc being kept at a high level.
摘要翻译：公开了一种高温超导装置，包括斜坡边缘连接。斜坡边缘结包括限定斜边结的大小的第一电极层（5）和第二电极层（6）。第二电极层（6）的宽度大于第一电极层（5）的宽度。第一电极层（5）和第二电极层（6）部分接触，并通过第一绝缘层（7）剩余部分分离。因为斜坡边缘结包括第一电极层（5）和第二电极层（6），所以斜坡边缘结的电感可以随着临时电流密度J C被保持而减小在高层。

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