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1. 发明申请

US20050171224A1 Polyurethane polishing pad 审中-公开
标题翻译：聚氨酯抛光垫
公开(公告)号：US20050171224A1
公开(公告)日：2005-08-04
申请号：US10772054
申请日：2004-02-03
申请人： Mary Kulp
发明人： Mary Kulp
IPC分类号： B24B37/04 , C08G18/10 , C08G18/48 , C08G18/00
CPC分类号： B24B37/24 , C08G18/10 , C08G18/4854 , C08G18/3812
摘要： The polishing pad is suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a cast polyurethane polymeric material formed with an isocyanate-terminated reaction product formed from a prepolymer reaction of a prepolymer polyol and a polyfunctional isocyanate. The isocyanate-terminated reaction product has 4.5 to 8.7 weight percent NCO reaction group; and the isocyanate-terminated reaction product is cured with a curative agent selected from the group comprising curative polyamines, curative polyols, curative alcoholamines and mixtures thereof. The polishing pad contains at least 0.1 volume percent filler or porosity.
摘要翻译：抛光垫适用于平面化半导体，光学和磁性基板中的至少一个。抛光垫包括由预聚物多元醇和多官能异氰酸酯的预聚物反应形成的由异氰酸酯封端的反应产物形成的流延聚氨酯聚合物材料。异氰酸酯封端的反应产物具有4.5-8.8重量％的NCO反应基团; 异氰酸酯封端的反应产物用选自固化剂多胺，固化多元醇，固化醇胺及其混合物的固化剂固化。抛光垫含有至少0.1体积％的填料或孔隙率。

2. 发明申请

US20060226567A1 Method for forming a porous polishing pad 有权
标题翻译：形成多孔抛光垫的方法
公开(公告)号：US20060226567A1
公开(公告)日：2006-10-12
申请号：US11398265
申请日：2006-04-04
申请人： David James , Mary Kulp , John Roberts
发明人： David James , Mary Kulp , John Roberts
IPC分类号： B29C44/06
CPC分类号： B29C70/66 , B24D11/001 , B29B7/726 , B29B7/749 , B29B7/90
摘要： The present invention provides a method of forming a chemical mechanical polishing pad comprising providing a polymeric matrix with fluid-filled unexpanded microspheres, curing the polymeric matrix and heating the polymeric matrix and the microspheres to expand the microspheres.
摘要翻译：本发明提供一种形成化学机械抛光垫的方法，包括提供具有流体填充的未膨胀微球的聚合物基质，固化聚合物基质并加热聚合物基质和微球体以膨胀微球体。

3. 发明申请

US20050171225A1 Polyurethane polishing pad 有权
标题翻译：聚氨酯抛光垫
公开(公告)号：US20050171225A1
公开(公告)日：2005-08-04
申请号：US11036285
申请日：2005-01-13
申请人： Mary Kulp
发明人： Mary Kulp
IPC分类号： B24B37/04 , C08G18/10 , C08G18/48 , C08G18/00
CPC分类号： B24B37/24 , C08G18/10 , C08G18/4854 , C08G18/3812
摘要： The polishing pad is suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a cast polyurethane polymeric material formed with an isocyanate-terminated reaction product formed from a prepolymer reaction of a prepolymer polyol and a polyfunctional isocyanate. The isocyanate-terminated reaction product has 4.5 to 8.7 weight percent unreacted NCO; and the isocyanate-terminated reaction product is cured with a curative agent selected from the group comprising curative polyamines, curative polyols, curative alcoholamines and mixtures thereof. The polishing pad contains at least 0.1 volume percent filler or porosity.
摘要翻译：抛光垫适用于平面化半导体，光学和磁性基板中的至少一个。抛光垫包括由预聚物多元醇和多官能异氰酸酯的预聚物反应形成的由异氰酸酯封端的反应产物形成的流延聚氨酯聚合物材料。异氰酸酯封端的反应产物具有4.5-8.8重量％的未反应的NCO; 异氰酸酯封端的反应产物用选自固化剂多胺，固化多元醇，固化醇胺及其混合物的固化剂固化。抛光垫包含至少0.1体积％的填料或孔隙率。

4. 发明申请

US20050079806A1 Polishing pad 有权
标题翻译：抛光垫
公开(公告)号：US20050079806A1
公开(公告)日：2005-04-14
申请号：US10937914
申请日：2004-09-10
申请人： David James , Mary Kulp
发明人： David James , Mary Kulp
IPC分类号： B24B37/04 , B24D3/26 , B24D13/14 , C08G18/10 , C08G18/48 , B24B1/00
CPC分类号： B24B37/24 , B24D3/26 , C08G18/10 , C08G18/4854 , C08G18/3808
摘要： A polishing pad is useful planarizing semiconductor substrates. The polishing pad comprises a polymeric material having a porosity of at least 0.1 volume percent, a KEL energy loss factor at 40° C. and 1 rad/sec of 385 to 750 l/Pa and a modulus E′ at 40° C. and 1 rad/sec of 100 to 400 MPa.
摘要翻译：抛光垫是有用的平面化半导体衬底。抛光垫包括具有至少0.1体积％的孔隙率，40℃下的KEL能量损失系数和385-750升/分钟的1弧度/秒以及40℃的模量E'的聚合材料，以及 1rad / sec为100〜400MPa。

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