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1. 发明申请

US20070228011A1 Novel chemical composition to reduce defects 审中-公开
标题翻译：新型化学成分降低缺陷
公开(公告)号：US20070228011A1
公开(公告)日：2007-10-04
申请号：US11396012
申请日：2006-03-31
申请人： Mark Buehler , Mandyam Sriram , Danilo Castillo-Mejia , Tatyana Andryushchenko
发明人： Mark Buehler , Mandyam Sriram , Danilo Castillo-Mejia , Tatyana Andryushchenko
IPC分类号： B44C1/22 , C09K13/00 , C03C15/00
CPC分类号： C11D11/0047 , C11D3/0073
摘要： A chemical composition and methods to remove defects while maintaining corrosion protection of conductors on a substrate are described. The composition includes a conductive solution, a corrosion inhibitor; and a surfactant. A surfactant-to-inhibitor ratio in the composition is a function of a metal. The surfactant is an anionic surfactant, a non-ionic surfactant, or any combination thereof. The concentration of the corrosion inhibitor in the chemical composition can be low. The corrosion inhibitor can form soft bonds with a conductor material. The conductive solution can be a high ionic strength solution. The composition is applied to a wafer having conductors on a substrate. At least two conductors on the substrate have different potentials. The composition can be used to clean the wafer after forming the conductors on the substrate. The composition can be used for chemical mechanical polishing of the wafer.
摘要翻译：描述了在保持基板上的导体的腐蚀保护的同时去除缺陷的化学组成和方法。该组合物包括导电溶液，缓蚀剂; 和表面活性剂。组合物中的表面活性剂与抑制剂的比例是金属的函数。表面活性剂是阴离子表面活性剂，非离子表面活性剂或其任何组合。化学成分中腐蚀抑制剂的浓度可能很低。腐蚀抑制剂可以与导体材料形成软键。导电溶液可以是高离子强度溶液。将组合物施加到在基底上具有导体的晶片。衬底上至少有两个导体具有不同的电位。该组合物可用于在基板上形成导体之后清洁晶片。该组合物可用于晶片的化学机械抛光。

2. 发明申请

US20070152252A1 Reducing aluminum dissolution in high pH solutions 审中-公开
标题翻译：在高pH值溶液中降低铝的溶解度
公开(公告)号：US20070152252A1
公开(公告)日：2007-07-05
申请号：US11322885
申请日：2005-12-30
申请人： Mark Buehler , Anne Miller , Tatyana Andryushchenko
发明人： Mark Buehler , Anne Miller , Tatyana Andryushchenko
IPC分类号： H01L21/8242 , H01L21/461
CPC分类号： H01L21/02074 , H01L21/28079 , H01L21/28185 , H01L21/28194 , H01L21/321 , H01L29/517 , H01L29/66545
摘要： A method for reducing the dissolution of aluminum gate electrodes in a high pH clean chemistry comprises modifying the high pH clean chemistry to include a silanol-based chemical. The silanol-based chemical causes a protective layer to form on a top surface of the aluminum gate electrode. The protective layer substantially reduces or prevents corrosion that occurs due to the high pH level of the clean chemistry. The protective layer is formed by the silanol-based chemical bonding to the aluminum gate electrode through a hydrolysis reaction, thereby forming a silanol-based protective layer.
摘要翻译：一种用于在高pH清洁化学品中减少铝栅电极的溶解的方法包括改变高pH清洁化学物质以包括基于硅烷醇的化学品。基于硅烷醇的化学品导致在铝栅电极的顶表面上形成保护层。保护层基本上减少或防止由于清洁化学品的高pH值而发生的腐蚀。通过水解反应，通过与铝栅电极的硅烷醇类化学键合形成保护层，由此形成硅烷醇类保护层。

3. 发明申请

US20060046523A1 Facilitating removal of sacrificial layers to form replacement metal gates 审中-公开
标题翻译：有助于去除牺牲层以形成更换金属门
公开(公告)号：US20060046523A1
公开(公告)日：2006-03-02
申请号：US10925458
申请日：2004-08-25
申请人： Jack Kavalieros , Justin Brask , Mark Doczy , Chris Barns , Matthew Metz , Suman Datta , Robert Chau , Matt Prince , Anne Miller , Mark Buehler
发明人： Jack Kavalieros , Justin Brask , Mark Doczy , Chris Barns , Matthew Metz , Suman Datta , Robert Chau , Matt Prince , Anne Miller , Mark Buehler
IPC分类号： H01L21/76
CPC分类号： H01L29/517 , H01L21/28079 , H01L21/28185 , H01L21/28194 , H01L21/823842 , H01L29/495 , H01L29/66545
摘要： Replacement metal gates may be formed by removing a polysilicon layer from a gate structure. The gate structure may be formed by patterning the polysilicon layer and depositing a spacer layer over the gate structure such that the spacer layer has a first polish rate. The spacer layer is then etched to form a sidewall spacer. An interlayer dielectric is applied over the gate structure with the sidewall spacer. The interlayer dielectric has a second polish rate higher than the first polish rate. In one embodiment, the interlayer dielectric has a lower polish rate than that of oxide.
摘要翻译：可以通过从栅极结构去除多晶硅层来形成替代金属栅极。栅极结构可以通过图案化多晶硅层并在栅极结构上沉积间隔层形成，使得间隔层具有第一抛光速率。然后对间隔层进行蚀刻以形成侧壁间隔物。在栅极结构上用侧壁间隔物施加层间电介质。层间电介质具有比第一抛光速率高的第二抛光速率。在一个实施例中，层间电介质具有比氧化物更低的抛光速率。

4. 发明申请

US20050206005A1 Composition and a method for defect reduction 审中-公开
标题翻译：组合物和减少缺陷的方法
公开(公告)号：US20050206005A1
公开(公告)日：2005-09-22
申请号：US11133828
申请日：2005-05-19
申请人： Mark Buehler
发明人： Mark Buehler
IPC分类号： B24B37/04 , C23G1/10 , H01L21/02 , H01L21/321 , H01L21/3213 , H01L23/48
CPC分类号： C23G1/103 , B24B37/042 , H01L21/02074 , H01L21/0209 , H01L21/3212
摘要： A metal layer cleaning composition including a first component that is an acid; and a different second component that is a chelating agent, wherein the composition is in a form suitable for use in effectively removing undesirable constituents from a wafer surface following a polishing operation.
摘要翻译：一种金属层清洁组合物，其包含作为酸的第一成分; 和作为螯合剂的不同的第二组分，其中所述组合物是适合用于在抛光操作之后有效地从晶片表面去除不需要的组分的形式。

5. 发明申请

US20050092350A1 Scrubbing brush with ligand attachments 审中-公开
标题翻译：带有配体附件的刷毛
公开(公告)号：US20050092350A1
公开(公告)日：2005-05-05
申请号：US10698323
申请日：2003-10-31
申请人： Mark Buehler
发明人： Mark Buehler
IPC分类号： B08B1/00 , B08B1/04 , B08B7/00 , C08F8/00 , H01L21/00
CPC分类号： H01L21/67046 , B08B1/00 , B08B1/04 , C08F8/00 , C08F16/06
摘要： A semiconductor wafer cleaning brush may have ligands attached along the length of its polymer chain. These ligands may provide moieties with specific functional features such as providing a hydrophilic characteristic, a hydrophobic characteristic, a reducing agent, or an oxidizing agent, to mention a few examples. In addition, the attaching ligand may provide a mechanical cleaning structure that is effective in reaching into small areas on the wafer to be cleaned. The ligand may be attached to the length of the brush polymer using a hydrolysis reaction in one embodiment.
摘要翻译：半导体晶片清洁刷可以具有沿其聚合物链的长度附着的配体。这些配体可以提供具有特定功能特征的部分，例如提供亲水特性，疏水特性，还原剂或氧化剂，仅举几个实例。此外，附着配体可以提供有效地到达待清洁的晶片上的小区域的机械清洁结构。在一个实施方案中，配体可以使用水解反应连接到刷聚合物的长度上。

6. 发明申请

US20080153731A1 Clean chemistry composition, method of manufacturing same, and system making use of same 审中-公开
标题翻译：清洁化学成分，制造方法和使用它的系统
公开(公告)号：US20080153731A1
公开(公告)日：2008-06-26
申请号：US11644254
申请日：2006-12-21
申请人： Mark Buehler
发明人： Mark Buehler
IPC分类号： H01L21/306 , C11D7/00
CPC分类号： C11D3/2075 , C11D1/02 , C11D11/0047 , H01L21/02065 , H01L21/02074 , H01L21/31053 , H01L21/3212
摘要： A clean chemistry composition includes an organic acid and a polar surfactant. The clean chemistry composition is capable of imparting an electrical charge to particles generated during a CMP operation on a wafer made up of semiconductors having a metal gate structure. The imparted electrical charge has the same polarity as that of an electrical charge on the wafer surface, such that the resulting repulsive force between the wafer surface and the newly-charged particles is sufficient to repel the particles from the wafer surface.
摘要翻译：清洁的化学组合物包括有机酸和极性表面活性剂。清洁化学组合物能够在由具有金属栅极结构的半导体构成的晶片上对CMP操作期间产生的颗粒施加电荷。赋予的电荷具有与晶片表面上的电荷相同的极性，使得所得到的晶片表面和新带电粒子之间的排斥力足以从晶片表面排斥粒子。

7. 发明授权

US06358853B2 Ceria based slurry for chemical-mechanical polishing 失效
标题翻译：用于化学机械抛光的二氧化铈基浆料
公开(公告)号：US06358853B2
公开(公告)日：2002-03-19
申请号：US09151370
申请日：1998-09-10
申请人： Kenneth C. Cadien , Allen D. Feller , Mark Buehler , Paul Fischer
发明人： Kenneth C. Cadien , Allen D. Feller , Mark Buehler , Paul Fischer
IPC分类号： H01L21302
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/31058
摘要： A ceria based abrasive is used in a chemical mechanical polishing operation at low polish pressure, and a predetermined pH range, to achieve high polish rates and good uniformity when planarizing layers formed from low dielectric constant materials, including but not limited to polymers. The distribution of ceria particle sizes in an exemplary slurry is bimodal and controlled. In a particular embodiment a polishing abrasive containing a controlled distribution of ceria particle sizes is used in a CMP polisher apparatus with a polishing pressure of approximately 3 psi and a pH of approximately 10.6 to planarize polymer films.
摘要翻译：在低抛光压力和预定pH范围的化学机械抛光操作中使用二氧化铈基研磨剂，以在由低介电常数材料（包括但不限于聚合物）形成的平面化层时获得高抛光速率和良好的均匀性。在示例性浆料中的二氧化铈颗粒尺寸的分布是双峰的和受控的。在一个具体实施方案中，含有二氧化铈颗粒尺寸的受控分布的抛光磨料用于抛光压力为约3psi并且约为约pH 10.6平面化聚合物膜。

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