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    • 1. 发明申请
    • HARMONICALLY MATCHED DIFFRACTION GRATING PAIR
    • 和谐匹配衍射成对
    • US20080002209A1
    • 2008-01-03
    • US11770553
    • 2007-06-28
    • Zahid YaqoobJigang WuMarinko Venci SarunicChanghuei Yang
    • Zahid YaqoobJigang WuMarinko Venci SarunicChanghuei Yang
    • G01B9/02
    • G01B9/0201G01B9/02004G01B9/02081G01B9/0209G01B2290/30G01B2290/45
    • A method and device realize shallow gratings-based planar beam splitter/combiner. Non-trivial phase shifts between different ports of resulting interferometers are used to acquire full-field phase measurements. The non-trivial phase shifts between different ports of the planar beam splitter/combiner can be adjusted by simply shearing one grating with respect to the second grating. The two shallow diffraction gratings are harmonically-related and can be recorded on a single substrate for compact interferometric based schemes. During the recording process, the two gratings are aligned such that the grating planes and the grating vectors are parallel to that of each other. The relative phase of the recording beams controls the shearing between the recorded harmonically-related shallow phase gratings. The relative shearing of the two gratings defines the non-trivial phase shift between different ports of the compact planar beam splitter/combiner.
    • 一种方法和装置实现了基于光栅的平面光束分离器/组合器。 所得干涉仪的不同端口之间的非平凡相移用于获取全场相位测量。 平面分束器/组合器的不同端口之间的非平凡相移可以通过相对于第二光栅简单地剪切一个光栅来调节。 两个浅衍射光栅是谐波相关的,并且可以记录在单个基板上,用于紧凑的基于干涉的方案。 在记录过程中,两个光栅对齐,使得光栅平面和光栅矢量彼此平行。 记录光束的相对相位控制记录的谐波相关浅相位光栅之间的剪切。 两个光栅的相对剪切定义了紧凑型平面分束器/组合器的不同端口之间的非平凡相移。
    • 3. 发明授权
    • Dry multilayer inorganic alloy thermal resist for lithographic processing and image creation
    • 干燥多层无机合金热解用于光刻处理和图像创建
    • US06641978B1
    • 2003-11-04
    • US09618065
    • 2000-07-17
    • Glenn Harrison ChapmanMarinko Venci SarunicYugiang Tu
    • Glenn Harrison ChapmanMarinko Venci SarunicYugiang Tu
    • G03C176
    • G03F7/0042
    • A thermal inorganic resist for lithographic processes and image creation is disclosed. In one embodiment an In layer of 15 nm is deposited, followed by a Bi layer of 15 nm. Upon exposure to a optical light pulse of sufficient intensity the optical absorption heats the film above the eutectic melting point (110° C. for BiIn) and the resist forms an alloy in the exposed area, replicating patterns projected on its surface. Optical characteristics of the alloyed layers are in these resists typically different from the unexposed layers creating a visual image of the exposure pattern before the development etch aiding in exposure control. The resist layer is then stripped, leaving the pattern layer on the substrate. In resists showing significant optical differences (such as BiIn) after exposure this same material can be used to create images for data storage, and, when transparent, photomasks for optical lithography.
    • 公开了一种用于光刻工艺和图像创建的热无机抗蚀剂。 在一个实施例中,沉积15nm的In层,接着是15nm的Bi层。 当暴露于足够强度的光学脉冲时,光学吸收将膜高于共晶熔点(BiIn的110℃),并且抗蚀剂在曝光区域中形成合金,复制在其表面上投射的图案。 合金层的光学特性在这些抗蚀剂中通常不同于未曝光层,在曝光控制之前产生曝光图案的视觉图像。 然后剥离抗蚀剂层,使图案层留在衬底上。 在曝光后显示出显着的光学差异的抗蚀剂(例如BiIn)中,可以使用相同的材​​料来创建用于数据存储的图像,并且当透明时用于光学光刻的光掩模。