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1. 发明授权

US07575826B2 Fuel cell with metal alloy contacts that form passivating conductive oxide surfaces 有权
标题翻译：具有形成钝化导电氧化物表面的金属合金触点的燃料电池
公开(公告)号：US07575826B2
公开(公告)日：2009-08-18
申请号：US11825037
申请日：2007-07-03
申请人： Joseph V. Mantese , David S. Eddy , Neil R. Aukland , Margarita P. Thompson , Su-Chee S. Wang
发明人： Joseph V. Mantese , David S. Eddy , Neil R. Aukland , Margarita P. Thompson , Su-Chee S. Wang
IPC分类号： H01M8/10
CPC分类号： H01M8/0204 , H01M8/0208 , H01M8/0228 , H01M2008/1095 , H01M2008/1293 , Y02P70/56
摘要： A metal alloy which when oxidized forms a highly conductive surface oxide layer. Alloy compositions such as, but not limited to, Ti—Nb, Ti—Ta, La—Sr—Cr, and La—Sr—Co are known to form oxide passivation layers which are highly conductive. Such alloys are useful in electrical contact apparatus. An electrical contact element formed of the alloy has a contact surface which when oxidized forms a highly conductive surface layer, thus maintaining electrical conductivity and continuity through the element. The oxide layer may be formed in situ after assembly of the electrical contact or may be provided in an oxidative step during manufacture. The electrical contact may be formed entirely of one or more of such alloys; or may be formed of an inexpensive substrate base metal, such as steel, having one or more of the alloys coated thereupon; or may be formed of a mixture of the base metal and the alloy.
摘要翻译：当氧化时形成高导电性表面氧化物层的金属合金。已知合金组成例如但不限于Ti-Nb，Ti-Ta，La-Sr-Cr和La-Sr-Co，以形成高导电性的氧化物钝化层。这种合金可用于电接触装置。由合金形成的电接触元件具有接触表面，当被氧化时形成高导电表面层，从而保持导电性和通过该元件的连续性。氧化物层可以在组装电接触之后就地形成，或者可以在制造期间以氧化步骤提供。电接触可以完全由一种或多种这样的合金形成; 或者可以由廉价的基板金属（例如钢）形成，其中涂覆有一种或多种合金; 或者可以由贱金属和合金的混合物形成。

2. 发明授权

US07074272B2 Cubic (zinc-blend) aluminum nitride and method of making same 有权
标题翻译：立方（锌 - 共混）氮化铝及其制造方法
公开(公告)号：US07074272B2
公开(公告)日：2006-07-11
申请号：US10364811
申请日：2003-02-10
申请人： Margarita P. Thompson , Gregory W. Auner
发明人： Margarita P. Thompson , Gregory W. Auner
IPC分类号： C30B25/12 , C30B25/14
CPC分类号： C30B23/02 , C30B29/403 , H01L29/2003 , H01L41/316 , Y10T117/10
摘要： Device quality, single crystal film of cubic zinc-blende aluminum nitride (AlN) is deposited on a cubic substrate, such as a silicon (100) wafer by plasma source molecular beam epitaxy (PSMBE). The metastable zinc-blende form of AlN is deposited on the substrate at a low temperature by a low energy plasma beam of high-energy activated aluminum ions and nitrogen ion species produced in a molecular beam epitaxy system by applying a pulsed d.c. power to a hollow cathode source. In this manner, films having a thickness of at least 800 Å were produced. The lattice parameter of as-deposited films was calculated to be approximately 4.373 Å which corresponds closely to the theoretical calculation (4.38 Å) for cubic zinc-blende AlN. An interfacial layer of silicon carbide, specifically the cubic 3C—SiC polytype, interposed between the epitaxial film of zinc-blende AlN and the Si(100) wafer provides a template for growth and a good lattice match. The epitaxial layer of zinc-blende AlN has been characterized for its physical and optical properties. As a result, experimental data confirmed that zinc-blende AlN is an indirect semiconductor and has a bandgap about 5.34 eV. Due to the extraordinary piezoelectric properties of zinc-blende AlN, an illustrative device embodiment is a surface acoustic wave (SAW) device comprising interdigitated electrodes deposited by conventional means on the surface of the epitaxial layer of zinc-blende AlN to convert an electrical signal to a surface acoustic wave and vice versa.
摘要翻译：通过等离子体源分子束外延（PSMBE）将器件质量的立方氮化锌（AlN）单晶膜沉积在诸如硅（100）晶片的立方体衬底上。亚稳态的闪锌矿形式的AlN在低温下通过施加脉冲直流的分子束外延系统中产生的高能激活铝离子和氮离子种类的低能量等离子体束沉积在衬底上。电源到空心阴极源。以这种方式制备厚度至少为800的膜。计算沉积膜的晶格参数约为4.373Å，这与立方zinc e e AlN的理论计算（4.38Å）相当。插入在锌闪光体AlN的外延膜和Si（100）晶片之间的碳化硅界面层，特别是立方3C-SiC多型，提供了用于生长和良好晶格匹配的模板。闪锌矿AlN的外延层的物理和光学性质已被表征。结果，实验数据证实了闪锌矿AlN是间接的半导体，并具有约5.34eV的带隙。由于锌闪光体AlN的非凡的压电性能，说明性的器件实施例是表面声波（SAW）器件，其包括通过常规方法在锌闪光体AlN的外延层的表面上沉积的叉指电极，以将电信号转换为表面声波，反之亦然。

3. 发明授权

US06518637B1 Cubic (zinc-blende) aluminum nitride 有权
标题翻译：立方（闪锌矿）氮化铝
公开(公告)号：US06518637B1
公开(公告)日：2003-02-11
申请号：US09544914
申请日：2000-04-07
申请人： Margarita P. Thompson , Gregory W. Auner
发明人： Margarita P. Thompson , Gregory W. Auner
IPC分类号： H01L2982
CPC分类号： C30B23/02 , C30B29/403 , H01L29/2003 , H01L41/316 , Y10T117/10
摘要： Device quality, single crystal film of cubic zinc-blend aluminum nitride (AlN) is deposited on a cubic substrate, such as a silicon (100) wafer by plasma source molecular beam epitaxy (PSMBE). The metastable zinc-blend form of AlN is deposited on the substrate at a low temperature by a low energy plasma beam of high-energy activated aluminum ions and nitrogen ion species produced in a molecular beam epitaxy system by applying a pulsed d.c. power to a hollow cathode source. In this manner, films having a thickness of at least 800 Å were produced. The lattice parameter of as-deposited films was calculated to be approximately 4.373 Å which corresponds closely to the theoretical calculation (4.38 Å) for cubic zinc-blend AlN. An interfacial layer of silicon carbide, specifically the cubic 3C—SiC polytype, interposed between the epitaxial film of zinc-blend AlN and the Si(100) wafer provides a template for growth and a good lattice match. The epitaxial layer of zinc-blend AlN has been characterized for its physical and optical properties. As a result, experimental data confirmed that zinc-blend AlN is an indirect semiconductor and has a bandgap about 5.34 eV. Due to the extraordinary piezoelectric properties of zinc-blend AlN, an illustrative device embodiment is a surface acoustic wave (SAW) device comprising interdigitated electrodes deposited by conventional means on the surface of the epitaxial layer of zinc-blend AlN to convert an electrical signal to a surface acoustic wave and vice versa.
摘要翻译：通过等离子体源分子束外延（PSMBE）将器件质量的立方氮化锌（AlN）单晶膜沉积在诸如硅（100）晶片的立方体衬底上。通过施加脉冲直流电压，在分子束外延系统中产生的高能激活铝离子和氮离子种类的低能量等离子体束，在低温下将AlN的亚稳态锌 - 锌混合物形式沉积在衬底上。电源到空心阴极源。以这种方式制备厚度至少为800的膜。计算沉积膜的晶格参数约为4.373，这与立方zinc blend blend blend blend the the the the the the the。。。。。。。。。。。介于锌 - 掺合AlN的外延膜和Si（100）晶片之间的碳化硅界面层，特别是立方3C-SiC多型，提供了用于生长和良好晶格匹配的模板。锌掺杂AlN的外延层的特性在于其物理和光学性质。结果，实验数据证实了锌掺杂AlN是间接的半导体，具有约5.34eV的带隙。由于锌 - 掺混AlN的非凡的压电性能，说明性的器件实施例是表面声波（SAW）器件，其包括通过常规方法在锌 - 掺杂AlN的外延层的表面上沉积的叉指电极，以将电信号转换为表面声波，反之亦然。

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