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1. 发明授权

US06703641B2 Structure for detecting charging effects in device processing 失效
标题翻译：用于检测设备处理中的充电效果的结构
公开(公告)号：US06703641B2
公开(公告)日：2004-03-09
申请号：US09991507
申请日：2001-11-16
申请人： Terence L. Kane , Yun Yu Wang , Malcolm P. Cambra, Jr. , Michael P. Tenney
发明人： Terence L. Kane , Yun Yu Wang , Malcolm P. Cambra, Jr. , Michael P. Tenney
IPC分类号： H01L2358
CPC分类号： H01L22/34 , H01L2924/0002 , Y10S257/903 , H01L2924/00
摘要： A semiconductor device monitor structure is described which can detect localized defects due to floating-body effects, particularly on SOI device wafers. The monitor structure includes a plurality of cells containing PFET or NFET devices, disposed at a perimeter of the structure which is bordered by an insulating region such as shallow trench isolation (STI). Each cell includes polysilicon gate structures having a characteristic spacing given by a first distance, and a portion extending beyond the perimeter a second distance. The cells are constructed in accordance with progressively varying ground rules, so that the first distance and second distance are non-uniform between cells. The cells may be bit fail mapped for single-cell failures, thereby enabling detection of localized defects due to floating-body effects.
摘要翻译：描述了可以检测由于浮体效应引起的局部缺陷的半导体器件监视器结构，特别是在SOI器件晶片上。监视器结构包括多个包含PFET或NFET器件的单元，该单元设置在由诸如浅沟槽隔离（STI）之类的绝缘区域界定的结构的周边。每个单元包括具有由第一距离给出的特征间隔的多晶硅栅极结构，以及延伸超过周边第二距离的部分。细胞根据逐渐变化的基本规则构造，使得细胞之间的第一距离和第二距离是不均匀的。这些单元可能被单位故障映射成位故障，从而能够检测由于浮体效应引起的局部缺陷。

2. 发明授权

US07063987B2 Backside failure analysis of integrated circuits 失效
标题翻译：集成电路的背面故障分析
公开(公告)号：US07063987B2
公开(公告)日：2006-06-20
申请号：US10738144
申请日：2003-12-17
申请人： Walter J. Rowe, Jr. , Isaiah McDonald , Malcolm P. Cambra, Jr.
发明人： Walter J. Rowe, Jr. , Isaiah McDonald , Malcolm P. Cambra, Jr.
IPC分类号： H01L21/00 , H01L21/44 , H01L21/48 , H01L21/50 , G01R31/26
CPC分类号： G01R31/303 , G01R31/2898 , H01L2224/49171
摘要： Backside failure analysis of integrated circuits. In one embodiment, a method of preparing a device under test (DUT) for an image based diagnostic testing is disclosed. The method comprises removing a portion of the backside package of the DUT to allow for the implementation of an image based diagnostic test through the backside of the DUT. The functionality of DUT is destroyed by the removal of the portion of the backside package of the DUT. Further, restoring the functionality of the DUT with an interface carrier before an image based diagnostic test is conducted.
摘要翻译：集成电路的背面故障分析。在一个实施例中，公开了一种准备用于基于图像的诊断测试的被测器件（DUT）的方法。该方法包括去除DUT的背面封装的一部分，以允许通过DUT的背面执行基于图像的诊断测试。通过去除DUT的背面封装的部分来破坏DUT的功能。此外，在执行基于图像的诊断测试之前，使用接口载体恢复DUT的功能。

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