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1. 发明申请

US20130021509A1 SOLID-STATE IMAGING DEVICE DRIVING METHOD 审中-公开
公开(公告)号：US20130021509A1
公开(公告)日：2013-01-24
申请号：US13592792
申请日：2012-08-23
申请人： Makoto INAGAKI , Yoshiyuki MATSUNAGA
发明人： Makoto INAGAKI , Yoshiyuki MATSUNAGA
IPC分类号： H04N5/335
CPC分类号： H04N5/378 , H04N5/3577 , H04N5/374
摘要： Photosensitive cells each includes a photodiode (1), a transfer gate (2), a floating diffusion layer portion (3), an amplifying transistor (4), and a reset transistor (5). Drains of the amplifying transistors (4) of the photosensitive cells are connected to a power supply line (10), and a pulsed power supply voltage (VddC) is applied to the power supply line (10). Here, a low-level potential (VddC_L) of the power supply voltage has a predetermined potential higher than zero potential. Specifically, by making the low-level potential (VddC_L) higher than channel potentials obtained when a low level is applied to the reset transistors (5), or channel potentials obtained when a low level is applied to the transfer gates (2), or channel potentials of the photodiodes (1), a reproduced image with low noise is read.

2. 发明申请

US20110272751A1 SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20110272751A1
公开(公告)日：2011-11-10
申请号：US13185199
申请日：2011-07-18
申请人： Makoto INAGAKI , Yoshiyuki Matsunaga
发明人： Makoto INAGAKI , Yoshiyuki Matsunaga
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14636 , H04N5/341 , H04N5/3575 , H04N5/3741
摘要： In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation region. The floating diffusion layer section 103 included in one photosensitive cell is connected not to the amplifier transistor 104 included in that cell but to the gate of the amplifier transistor 104 included in another photosensitive cell adjacent to the one photosensitive cell in the column direction. A polysilicon wire 111 connects the transfer gates 102 arranged in the same row, and a polysilicon wire 112 connects the reset transistors 105 arranged in the same row. For connection in the row direction, only polysilicon wires are used.
摘要翻译：在每个感光单元中，在由器件隔离区包围的一个有源区域中形成光电二极管101，传输门102，浮动扩散层部分103，放大器晶体管104和复位晶体管105。包含在一个感光单元中的浮动扩散层部分103不是连接到包括在该单元中的放大器晶体管104，而是连接到在列方向上与一个感光单元相邻的另一个感光单元中的放大器晶体管104的栅极。多晶硅导线111连接排列在同一行的传输门102，并且多晶硅布线112连接布置在同一行中的复位晶体管105。为了在行方向上连接，仅使用多晶硅线。

3. 发明授权

US07830433B2 Amplification type solid state imaging device 有权
标题翻译：放大型固态成像装置
公开(公告)号：US07830433B2
公开(公告)日：2010-11-09
申请号：US11568565
申请日：2005-07-27
申请人： Takashi Fujioka , Masayuki Masuyama , Makoto Inagaki
发明人： Takashi Fujioka , Masayuki Masuyama , Makoto Inagaki
IPC分类号： H04N3/14 , H04N5/335 , H01L27/00 , H01L31/062 , H01L31/113
CPC分类号： H04N5/335 , H01L27/14609 , H01L27/14623 , H01L27/14643
摘要： An amplification type solid state imaging device in use includes at least a light-receiving portion 10 formed by arranging on a semiconductor substrate 7 one-dimensionally or two-dimensionally a plurality of pixels that convert incident light to signal charge and output electric signals corresponding to the amount of the signal charge, a reader for reading out sequentially the electric signals from the respective pixels, a noise rejection circuit 11 for suppressing spurious signals for the electric signals read out by the reader, and a first light-shielding layer 1 positioned on the upper part of the light-receiving portion 10 so as to restrict entry of light into parts other than photoelectric conversion portions 10a of the pixels. Furthermore, a second light-shielding layer 2 for restricting entry of light into the noise rejection circuit 11 is provided on the upper part of the noise rejection circuit 11.
摘要翻译：使用的放大型固态成像装置至少包括通过在半导体衬底7上一维或二维地排列将入射光转换成信号电荷的多个像素而形成的光接收部分10，并输出对应于信号电荷的量，从各个像素依次读出电信号的读取器，用于抑制由读取器读出的电信号的寄生信号的噪声抑制电路11以及位于第一遮光层1上的第一遮光层1 光接收部10的上部，以限制光进入像素的光电转换部10a以外的部分。此外，在噪声抑制电路11的上部设置有用于限制入射到噪声抑制电路11中的第二遮光层2。

4. 发明申请

US20100245642A1 SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20100245642A1
公开(公告)日：2010-09-30
申请号：US12797313
申请日：2010-06-09
申请人： Hiroshi TOYA , Takashi FUJIOKA , Masayuki MASUYAMA , Makoto INAGAKI
发明人： Hiroshi TOYA , Takashi FUJIOKA , Masayuki MASUYAMA , Makoto INAGAKI
IPC分类号： H04N5/335
CPC分类号： H04N5/3598
摘要： A solid-state imaging device which can, in response to the problem of black-crush occurring in an image when strong light is enters the device, positively detect black-crush in a state in which a variance margin has been secured. The solid-state imaging device outputs a luminance signal in accordance with an amount of received light, and includes: a pixel circuit having a light-receiving element; a signal output circuit having a sampling transistor which outputs, from a second signal output line, a luminance signal in accordance with the amount of light received by the light-receiving element, based on an output signal from the pixel circuit; and a high-intensity judgment circuit which is coupled by the pixel circuit and a judgment input coupling capacitor, judges whether or not light entering the light-receiving element is of high intensity based on the output signal from the pixel circuit, and in the case of judging the entering light to be of high intensity, outputs a luminance signal indicating high intensity.
摘要翻译：一种固态成像装置，其能够响应于当强光进入装置时在图像中发生黑色挤压的问题，在确保了方差裕量的状态下，可以积极地检测黑色粉碎。固态成像装置根据接收光的量输出亮度信号，包括：具有受光元件的像素电路; 信号输出电路，具有采样晶体管，其基于来自所述像素电路的输出信号，从第二信号输出线输出根据所述受光元件接收的光量的亮度信号; 以及由像素电路和判断输入耦合电容器耦合的高强度判断电路，基于来自像素电路的输出信号判断进入光接收元件的光是否高度强度，在这种情况下将入射光判定为高强度，输出表示高强度的亮度信号。

5. 发明授权

US07688373B2 Solid-state imaging device with specific contact arrangement 有权
标题翻译：具有特定接触排列的固态成像装置
公开(公告)号：US07688373B2
公开(公告)日：2010-03-30
申请号：US11529256
申请日：2006-09-29
申请人： Makoto Inagaki , Yoshiyuki Matsunaga
发明人： Makoto Inagaki , Yoshiyuki Matsunaga
IPC分类号： H04N5/335 , H04N3/14 , H01L31/112
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14636 , H04N5/341 , H04N5/3575 , H04N5/3741
摘要： In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation region. The floating diffusion layer section 103 included in one photosensitive cell is connected not to the amplifier transistor 104 included in that cell but to the gate of the amplifier transistor 104 included in another photosensitive cell adjacent to the one photosensitive cell in the column direction. A polysilicon wire 111 connects the transfer gates 102 arranged in the same row, and a polysilicon wire 112 connects the reset transistors 105 arranged in the same row. For connection in the row direction, only polysilicon wires are used.
摘要翻译：在每个感光单元中，在由器件隔离区包围的一个有源区域中形成光电二极管101，传输门102，浮动扩散层部分103，放大器晶体管104和复位晶体管105。包含在一个感光单元中的浮动扩散层部分103不是连接到包括在该单元中的放大器晶体管104，而是连接到在列方向上与一个感光单元相邻的另一个感光单元中的放大器晶体管104的栅极。多晶硅导线111连接排列在同一行的传输门102，并且多晶硅布线112连接布置在同一行中的复位晶体管105。为了在行方向上连接，仅使用多晶硅线。

6. 发明授权

US07352399B2 Solid-state imaging device driving method 有权
标题翻译：固态成像装置驱动方法
公开(公告)号：US07352399B2
公开(公告)日：2008-04-01
申请号：US10532992
申请日：2004-02-26
申请人： Makoto Inagaki , Yoshiyuki Matsunaga
发明人： Makoto Inagaki , Yoshiyuki Matsunaga
IPC分类号： H04N5/335
CPC分类号： H04N5/378 , H04N5/3577 , H04N5/374
摘要： Photosensitive cells each includes a photodiode (1), a transfer gate (2), a floating diffusion layer portion (3), an amplifying transistor (4), and a reset transistor (5). Drains of the amplifying transistors (4) of the photosensitive cells are connected to a power supply line (10), and a pulsed power supply voltage (VddC) is applied to the power supply line (10). Here, a low-level potential (VddC_L) of the power supply voltage has a predetermined potential higher than zero potential. Specifically, by making the low-level potential (VddC_L) higher than channel potentials obtained when a low level is applied to the reset transistors (5), or channel potentials obtained when a low level is applied to the transfer gates (2), or channel potentials of the photodiodes (1), a reproduced image with low noise is read.
摘要翻译：感光单元每个包括光电二极管（1），传输门（2），浮动扩散层部分（3），放大晶体管（4）和复位晶体管（5）。感光单元的放大晶体管（4）的漏极连接到电源线（10），并且将脉冲电源电压（VddC）施加到电源线（10）。这里，电源电压的低电平电位（VddC_L）具有高于零电位的预定电位。具体地说，通过使低电位电位（VddC_L）高于向复位晶体管（5）施加低电平时获得的沟道电位，或者当向传输门（2）施加低电平时获得的沟道电位，或读取光电二极管（1）的通道电位，读出低噪声的再现图像。

7. 发明授权

US08284283B2 Amplification type solid state imaging device 有权
标题翻译：放大型固态成像装置
公开(公告)号：US08284283B2
公开(公告)日：2012-10-09
申请号：US12857157
申请日：2010-08-16
申请人： Takashi Fujioka , Masayuki Masuyama , Makoto Inagaki
发明人： Takashi Fujioka , Masayuki Masuyama , Makoto Inagaki
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/335 , H01L27/14609 , H01L27/14623 , H01L27/14643
摘要： An amplification type solid state imaging device in use includes at least a light-receiving portion 10 formed by arranging on a semiconductor substrate 7 one-dimensionally or two-dimensionally a plurality of pixels that convert incident light to signal charge and output electric signals corresponding to the amount of the signal charge, a reader for reading out sequentially the electric signals from the respective pixels, a noise rejection circuit 11 for suppressing spurious signals for the electric signals read out by the reader, and a first light-shielding layer 1 positioned on the upper part of the light-receiving portion 10 so as to restrict entry of light into parts other than photoelectric conversion portions 10a of the pixels. Furthermore, a second light-shielding layer 2 for restricting entry of light into the noise rejection circuit 11 is provided on the upper part of the noise rejection circuit 11.
摘要翻译：使用的放大型固态成像装置至少包括通过在半导体衬底7上一维或二维地排列将入射光转换成信号电荷的多个像素而形成的光接收部分10，并输出对应于信号电荷的量，从各个像素依次读出电信号的读取器，用于抑制由读取器读出的电信号的寄生信号的噪声抑制电路11以及位于第一遮光层1上的第一遮光层1 光接收部10的上部，以限制光进入像素的光电转换部10a以外的部分。此外，在噪声抑制电路11的上部设置有用于限制入射到噪声抑制电路11中的第二遮光层2。

8. 发明授权

US08253833B2 Solid-state imaging device driving method 有权
标题翻译：固态成像装置驱动方法
公开(公告)号：US08253833B2
公开(公告)日：2012-08-28
申请号：US12536814
申请日：2009-08-06
申请人： Makoto Inagaki , Yoshiyuki Matsunaga
发明人： Makoto Inagaki , Yoshiyuki Matsunaga
IPC分类号： H04N3/14
CPC分类号： H04N5/378 , H04N5/3577 , H04N5/374
摘要： Photosensitive cells each includes a photodiode (1), a transfer gate (2), a floating diffusion layer portion (3), an amplifying transistor (4), and a reset transistor (5). Drains of the amplifying transistors (4) of the photosensitive cells are connected to a power supply line (10), and a pulsed power supply voltage (VddC) is applied to the power supply line (10). Here, a low-level potential (VddC_L) of the power supply voltage has a predetermined potential higher than zero potential. Specifically, by making the low-level potential (VddC_L) higher than channel potentials obtained when a low level is applied to the reset transistors (5), or channel potentials obtained when a low level is applied to the transfer gates (2), or channel potentials of the photodiodes (1), a reproduced image with low noise is read.
摘要翻译：感光单元每个包括光电二极管（1），传输门（2），浮动扩散层部分（3），放大晶体管（4）和复位晶体管（5）。感光单元的放大晶体管（4）的漏极连接到电源线（10），并且将脉冲电源电压（VddC）施加到电源线（10）。这里，电源电压的低电平电位（VddC_L）具有高于零电位的预定电位。具体地说，通过使低电位电位（VddC_L）高于当向复位晶体管（5）施加低电平时获得的沟道电位，或者当低电平施加到传输门（2）时获得的沟道电位，或读取光电二极管（1）的通道电位，读出低噪声的再现图像。

9. 发明授权

US08004026B2 Solid-state imaging device 有权
公开(公告)号：US08004026B2
公开(公告)日：2011-08-23
申请号：US12720549
申请日：2010-03-09
申请人： Makoto Inagaki , Yoshiyuki Matsunaga
发明人： Makoto Inagaki , Yoshiyuki Matsunaga
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14636 , H04N5/341 , H04N5/3575 , H04N5/3741
摘要： In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation region. The floating diffusion layer section 103 included in one photosensitive cell is connected not to the amplifier transistor 104 included in that cell but to the gate of the amplifier transistor 104 included in another photosensitive cell adjacent to the one photosensitive cell in the column direction. A polysilicon wire 111 connects the transfer gates 102 arranged in the same row, and a polysilicon wire 112 connects the reset transistors 105 arranged in the same row. For connection in the row direction, only polysilicon wires are used.

10. 发明授权

US07944493B2 Solid-state imaging device with specific contact arrangement 有权
标题翻译：具有特定接触排列的固态成像装置
公开(公告)号：US07944493B2
公开(公告)日：2011-05-17
申请号：US12715884
申请日：2010-03-02
申请人： Makoto Inagaki , Yoshiyuki Matsunaga
发明人： Makoto Inagaki , Yoshiyuki Matsunaga
IPC分类号： H04N3/14 , H01L31/062 , H01L27/00
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14636 , H04N5/341 , H04N5/3575 , H04N5/3741
摘要： In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation region. The floating diffusion layer section 103 included in one photosensitive cell is connected not to the amplifier transistor 104 included in that cell but to the gate of the amplifier transistor 104 included in another photosensitive cell adjacent to the one photosensitive cell in the column direction. A polysilicon wire 111 connects the transfer gates 102 arranged in the same row, and a polysilicon wire 112 connects the reset transistors 105 arranged in the same row. For connection in the row direction, only polysilicon wires are used.
摘要翻译：在每个感光单元中，在由器件隔离区包围的一个有源区域中形成光电二极管101，传输门102，浮动扩散层部分103，放大器晶体管104和复位晶体管105。包含在一个感光单元中的浮动扩散层部分103不是连接到包括在该单元中的放大器晶体管104，而是连接到在列方向上与一个感光单元相邻的另一个感光单元中的放大器晶体管104的栅极。多晶硅导线111连接排列在同一行的传输门102，并且多晶硅布线112连接布置在同一行中的复位晶体管105。为了在行方向上连接，仅使用多晶硅线。

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