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1. 发明申请

WO2008030713A1 SUBSTRATE CLEANING METHOD 审中-公开
标题翻译：基板清洗方法
公开(公告)号：WO2008030713A1
公开(公告)日：2008-03-13
申请号：PCT/US2007/076734
申请日：2007-08-24
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , MIZOTA, Shogo , TERUOMI, Minami , YOKOMIZO, Kenji , MASAKI, Taira
发明人： MIZOTA, Shogo , TERUOMI, Minami , YOKOMIZO, Kenji , MASAKI, Taira
IPC分类号： H01L21/02
CPC分类号： H01L21/02052 , H01L21/02057 , Y10S134/902
摘要： A method is provided for reducing the amount of film fragments (66a) discharged into a processing liquid circulation system (73, 73') during removal of films (66) from wafers (W), thereby reducing the frequency of filter (80) cleaning or filter (80) replacement. The method includes exposing a wafer (W) containing a film (66) formed thereon in a process chamber (46) of a substrate processing system (1) to a processing liquid (64), where the wafer (W) is not rotated or is rotated at a first speed (608a, 908a, 1208a) and the processing liquid (64) is discharged from the process chamber (46) to a processing liquid circulation system (73). Subsequently, exposure of the wafer (W) to the processing liquid (64, 64a, 64b) is discontinued and the wafer (W) is rotated at a second speed (608b, 908b, 1208b) greater than the first speed (608a, 908a, 1208a) to centrifugally remove fragments (66a) of the film (66) from the wafer (W). Next, the wafer (W) is exposed to the same or a different processing liquid (64, 64a, 64b) and the processing liquid (64, 64a, 64b) is discharged from the process chamber (46) to a processing liquid drain (78).
摘要翻译：提供一种用于减少在从晶片（W）移除薄膜（66）期间排出到处理液体循环系统（73,73'）中的薄膜碎片（66a）的量的方法，从而降低过滤器（80）清洁的频率或过滤器（80）更换。该方法包括将其上形成的膜（66）的晶片（W）暴露在基板处理系统（1）的处理室（46）中的处理液体（64）中，其中晶片（W）不旋转或以第一速度（608a，908a，1208a）旋转，并且处理液体（64）从处理室（46）排出到处理液循环系统（73）。随后，将晶片（W）暴露于处理液（64,64a，64b）中断，晶片（W）以比第一速度（608a，908a）大的第二速度（608b，908b，1208b）旋转，1208a）从晶片（W）离心去除膜（66）的碎片（66a）。接下来，将晶片（W）暴露于相同或不同的处理液（64,64a，64b），处理液（64,64a，64b）从处理室（46）排出到处理液排出口 78）。

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