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    • 1. 发明申请
    • CONTROLLING CRITICAL DIMENSIONS IN TRACK LITHOGRAPHY TOOLS
    • 控制跟踪算术工具中的关键尺寸
    • WO2008019362A3
    • 2008-10-16
    • PCT/US2007075344
    • 2007-08-07
    • SOKUDO CO LTDMICHAELSON TIMBEKIARIS NIKOLAOS
    • MICHAELSON TIMBEKIARIS NIKOLAOS
    • H01L21/00G01R31/26G06F19/00H01L21/66H05B3/68
    • H01L22/20H01L22/12
    • A method of controlling wafer critical dimension (CD) uniformity on a track lithography tool includes obtaining a CD map for a wafer (432) The CD map includes a plurality of CD data points correlated with a multi-zone heater geometry map (434) The multi-zone heater includes a plurality of heater zones The method also includes determining a CD value for a first heater zone of the plurality of heater zones based on one or more of the CD data points and computing a difference between the determined CD value for the first heater zone and a target CD value for the first heater zone (438) The method further includes determining a temperature variation for the first heater zone based, in part, on the computed difference and a temperature sensitivity of a photoresist deposited on the wafer an modifying a temperature of the first heater zone based, in part, on the temperature variation (440)
    • 控制轨道光刻工具上的晶片临界尺寸(CD)均匀性的方法包括获得晶片的CD映射(432).CD图包括与多区加热器几何图相关的多个CD数据点。 多区加热器包括多个加热器区域。该方法还包括基于一个或多个CD数据点确定多个加热器区域中的第一加热器区域的CD值,并计算所确定的CD值 第一加热器区域和用于第一加热器区域(438)的目标CD值。该方法还包括部分地基于计算出的差异和沉积在晶片上的光致抗蚀剂的温度敏感度来确定第一加热器区域的温度变化 部分地基于温度变化(440)改变第一加热器区域的温度,
    • 2. 发明申请
    • METHODS AND SYSTEMS FOR CONTROLLING CRITICAL DIMENSIONS IN TRACK LITHOGRAPHY TOOLS
    • 用于控制轨迹切削工具中关键尺寸的方法和系统
    • WO2008019362A2
    • 2008-02-14
    • PCT/US2007/075344
    • 2007-08-07
    • SOKUDO CO., LTD.MICHAELSON, TimBEKIARIS, Nikolaos
    • MICHAELSON, TimBEKIARIS, Nikolaos
    • B05C11/00H01L21/66
    • H01L22/20H01L22/12
    • A method of controlling wafer critical dimension (CD) uniformity on a track lithography tool includes obtaining a CD map for a wafer. The CD map includes a plurality of CD data points correlated with a multi-zone heater geometry map. The multi-zone heater includes a plurality of heater zones. The method also includes determining a CD value for a first heater zone of the plurality of heater zones based on one or more of the CD data points and computing a difference between the determined CD value for the first heater zone and a target CD value for the first heater zone. The method further includes determining a temperature variation for the first heater zone based, in part, on the computed difference and a temperature sensitivity of a photoresist deposited on the wafer and modifying a temperature of the first heater zone based, in part, on the temperature variation.
    • 控制轨道光刻工具上的晶片临界尺寸(CD)均匀性的方法包括获得晶片的CD图。 CD映射包括与多区加热器几何图相关的多个CD数据点。 多区加热器包括多个加热区。 该方法还包括基于CD数据点中的一个或多个来确定多个加热器区域中的第一加热器区域的CD值,并且计算所确定的第一加热器区域的CD值与用于第一加热器区域的目标CD值之间的差值 第一加热区。 该方法还包括:部分地基于计算出的差异和沉积在晶片上的光致抗蚀剂的温度敏感度来确定第一加热器区域的温度变化,并且部分地基于温度改变第一加热器区域的温度 变异。