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1. 发明申请

WO2011066668A1 METHOD OF ETCHING FEATURES INTO SUBSTRATE 审中-公开
标题翻译：将特征浸入底层的方法
公开(公告)号：WO2011066668A1
公开(公告)日：2011-06-09
申请号：PCT/CN2009/001358
申请日：2009-12-02
申请人： MCREYNOLDS, Darrell, Larue , C SUN MFG. LTD.
发明人： MCREYNOLDS, Darrell, Larue
IPC分类号： H01L21/3065 , C23F1/12
CPC分类号： H01L21/3065
摘要： A method of etching a substrate, such as silicon, using a plasma reactor to form deep features is provided. The method includes the steps of putting a semiconductor substrate including, but not limited to a silicon layer, into a plasma reactor, and flowing an etching gas that includes fluorinated etching gas, passivating reacting gas comprising oxygen and inert sputtering gas. An additional gas can be added, but not necessarily, such as nitrogen, carbon monoxide, CFx, CHFx, CxFy or hydrogen bromide, to assist in feature dimensional control. The feature dimensional control gas can control the feature size and etch angle. The method further promotes a silicon monoxide sidewall passivation to enhance feature dimensional control.
摘要翻译：提供了使用等离子体反应器来蚀刻诸如硅的衬底以形成深度特征的方法。该方法包括以下步骤：将包括但不限于硅层的半导体衬底放入等离子体反应器中，并使包括氟化蚀刻气体的蚀刻气体，包含氧和惰性溅射气体的钝化反应气体流动。可以添加另外的气体，但不一定如氮气，一氧化碳，CFx，CHFx，CxFy或溴化氢，以辅助特征尺寸控制。特征尺寸控制气体可以控制特征尺寸和蚀刻角度。该方法进一步促进一氧化硅侧壁钝化以增强特征尺寸控制。

2. 发明申请

WO2011063552A1 METHOD FOR FORMING VIA INTERCONNECTS FOR 3-D WAFER/CHIP STACKING 审中-公开
标题翻译：通过三维波形/芯片堆叠互连形成的方法
公开(公告)号：WO2011063552A1
公开(公告)日：2011-06-03
申请号：PCT/CN2009/001337
申请日：2009-11-27
申请人： MCREYNOLDS, Darrell Larue , C SUN MFG, LTD.
发明人： MCREYNOLDS, Darrell Larue
IPC分类号： H01L21/768 , H01L21/3065
CPC分类号： H01L21/76898 , H01L21/3065
摘要： A method for forming via interconnects in a silicon wafer comprises steps: forming a mask on a substrate; performing an etching step on the mask to form an opening; etching the substrate at the opening to form a via interconnect, the via interconnect has a sidewall, a bottom, and a depth; performing a chemical vapor deposition step with sulfur hexafluoride and oxygen for depositing an insulating oxide layer, the insulating oxide layer covers the sidewall and the bottom of the via interconnect and the mask; performing an ion bombardment gas etching step to etch the insulating oxide layer covered on the bottom of the via interconnect with an ion bombardment gas, the ion bombardment gas comprises at least one of the argon, boron, helium, nitrogen, and fluorocarbon; and performing a physical vapor deposition step to form a conductive material layer, the conductive material layer covers the sidewall and the bottom of the via interconnect and the mask.
摘要翻译：用于在硅晶片中形成通孔互连的方法包括以下步骤：在衬底上形成掩模; 在掩模上进行蚀刻步骤以形成开口; 在开口处蚀刻基板以形成通孔互连，通孔互连具有侧壁，底部和深度; 用六氟化硫和氧气进行化学气相沉积步骤，用于沉积绝缘氧化物层，绝缘氧化物层覆盖通路互连和掩模的侧壁和底部; 进行离子轰击气体蚀刻步骤以用离子轰击气体蚀刻通孔互连底部覆盖的绝缘氧化物层，所述离子轰击气体包括氩，硼，氦，氮和碳氟化合物中的至少一种; 并且进行物理气相沉积步骤以形成导电材料层，所述导电材料层覆盖所述通孔互连件和所述掩模的侧壁和底部。

3. 发明申请

WO2011022749A1 METHOD OF REMOVING PHOTORESIST AND ETCH-RESIDUES FROM VIAS 审中-公开
标题翻译：从VIAS去除光催化剂和蚀刻残留物的方法
公开(公告)号：WO2011022749A1
公开(公告)日：2011-03-03
申请号：PCT/AU2009/001088
申请日：2009-08-25
申请人： SILVERBROOK RESEARCH PTY LTD , FU, Yao , TSAI, Yi-Wen , MCREYNOLDS, Darrell LaRue , SECKER, David , BORDELANNE, Valerie , WISZNIEWSKI, Witold
发明人： FU, Yao , TSAI, Yi-Wen , MCREYNOLDS, Darrell LaRue , SECKER, David , BORDELANNE, Valerie , WISZNIEWSKI, Witold
IPC分类号： H01L21/311 , B41J2/16 , G03F7/42
CPC分类号： B41J2/16 , B41J2/14137 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1642 , B81B2201/052 , B81C1/00476 , G03F7/427 , H01L21/31138
摘要： A method of photoresist removal with concomitant de-veiling is provided. The method employs a plasma formed from a gas chemistry comprising O 2 , NH 3 and a fluorine-containing gas, such as CF 4 . The method is particularly suitable for use in MEMS fabrication processes, such as inkjet printhead fabrication.
摘要翻译：提供了一种同时进行光刻胶去除的方法。该方法采用由包含O 2，NH 3和含氟气体如CF 4的气体化学物质形成的等离子体。该方法特别适用于MEMS制造工艺，例如喷墨打印头制造。

4. 发明申请

WO2005123395A1 PROCESS FOR MODIFYING THE SURFACE PROFILE OF AN INK SUPPLY CHANNEL IN A PRINTHEAD 审中-公开
标题翻译：在印刷机中修改墨水通道的表面轮廓的工艺
公开(公告)号：WO2005123395A1
公开(公告)日：2005-12-29
申请号：PCT/AU2005/000455
申请日：2005-03-31
申请人： SILVERBROOK RESEARCH PTY LTD , MCREYNOLDS, Darrell, LaRue , SILVERBROOK, Kia
发明人： MCREYNOLDS, Darrell, LaRue , SILVERBROOK, Kia
IPC分类号： B41J2/175
CPC分类号： B41J2/1628 , B41J2/1412 , B41J2/1601 , B41J2/1631 , B41J2/1646
摘要： A process for modifying the surface profile of an ink supply channel (6) in a printhead is provided. The process comprises the steps of providing a printhead comprising ink supply channels, and ion milling the ink supply channel (6). The ion milling is generally performed with argon and tends to taper and/or round angular sidewall features (12) in the channel.
摘要翻译：提供了一种用于改变打印头中的供墨通道（6）的表面轮廓的过程。该方法包括以下步骤：提供包括供墨通道的打印头，以及离子铣削供墨通道（6）。离子铣削通常用氩气进行，并且倾向于在通道中锥形和/或圆形的角形侧壁特征（12）。

5. 发明申请

WO2006037151A3 METHOD OF REMOVING POLYMER COATING FROM AN ETCHED TRENCH 审中-公开
公开(公告)号：WO2006037151A3
公开(公告)日：2006-04-13
申请号：PCT/AU2005/001438
申请日：2005-10-04
申请人： SILVERBROOK RESEARCH PTY LTD , MCREYNOLDS, Darrell LaRue , SILVERBROOK, Kia
发明人： MCREYNOLDS, Darrell LaRue , SILVERBROOK, Kia
IPC分类号： H01L21/3065 , H01L21/308
摘要： A method of polymeric coating from sidewalls of en etched trench defined in silicon wafer [5] was provided The method comprises etching the wafer in a biased plasma etching chamber using 02 plasma. The chamber temperature is in the range of 90-180 deg C.

6. 发明申请

WO2006037151A2 METHOD OF REMOVING POLYMER COATING FROM AN ETCHED TRENCH 审中-公开
标题翻译：从蚀刻的TRENCH中去除聚合物涂层的方法
公开(公告)号：WO2006037151A2
公开(公告)日：2006-04-13
申请号：PCT/AU2005001438
申请日：2005-10-04
申请人： SILVERBROOK RES PTY LTD , MCREYNOLDS DARRELL LARUE , SILVERBROOK KIA
发明人： MCREYNOLDS DARRELL LARUE , SILVERBROOK KIA
CPC分类号： H01L21/02057 , B41J2/1412 , B41J2/1601 , B41J2/1623 , B41J2/1628 , B41J2/1631 , B41J2/164 , B81B2201/052 , B81B2203/033 , B81C1/00849 , B81C2201/0112 , B81C2201/0132
摘要： A method of removing a polymeric coating from sidewalls of an etched trench defined in a silicon wafer is provided. The method comprises etching the wafer in a biased plasma etching chamber using an O2 plasma. The chamber temperature is in the range of 90 to 180 °C.
摘要翻译：提供从硅晶片中限定的蚀刻沟槽的侧壁去除聚合物涂层的方法。该方法包括使用O 2等离子体在偏压等离子体蚀刻室中蚀刻晶片。室温度在90至180℃的范围内。

7. 发明申请

WO2009039552A1 REACTIVE ION ETCHING PROCESS FOR ETCHING METALS 审中-公开
标题翻译：用于蚀刻金属的反应离子蚀刻工艺
公开(公告)号：WO2009039552A1
公开(公告)日：2009-04-02
申请号：PCT/AU2007/001425
申请日：2007-09-26
申请人： SILVERBROOK RESEARCH PTY LTD , MCREYNOLDS, Darrell, LaRue , LAKSHMI, C., S. , SILVERBROOK, Kia
发明人： MCREYNOLDS, Darrell, LaRue , LAKSHMI, C., S. , SILVERBROOK, Kia
IPC分类号： C23F1/12 , H01L21/306 , H01L21/3065
CPC分类号： C23F4/00 , B41J2/14056 , B41J2/1603 , B41J2/1628 , B41J2/1631 , B41J2/1642 , B41J2002/1437 , B41J2002/14387 , B41J2002/14475
摘要： A method of etching a metal by a reactive ion etching process is provided. The etchant gas chemistry for the reactive ion etching process consists essentially of NH3. The process is particularly suitable for etching superalloys, which etch only slowly using conventional metal etching techniques.
摘要翻译：提供了通过反应离子蚀刻工艺蚀刻金属的方法。用于反应离子蚀刻工艺的蚀刻剂气体化学主要由NH 3组成。该方法特别适用于蚀刻超级合金，其仅使用常规金属蚀刻技术缓慢地蚀刻。

8. 发明申请

WO2009039551A1 METHOD OF REMOVING PHOTORESIST 审中-公开
标题翻译：去除光电离子的方法
公开(公告)号：WO2009039551A1
公开(公告)日：2009-04-02
申请号：PCT/AU2007/001424
申请日：2007-09-26
申请人： SILVERBROOK RESEARCH PTY LTD , MCREYNOLDS, Darrell LaRue , LAKSHMII, C., S , FU, Yao , SILVERBROOK, Kia
发明人： MCREYNOLDS, Darrell LaRue , LAKSHMII, C., S , FU, Yao , SILVERBROOK, Kia
IPC分类号： G03F7/42 , B41J2/16
CPC分类号： B41J2/1601 , B41J2/1628 , B41J2/1639 , G03F7/427
摘要： A method of photoresist removal is provided. The method employs a plasma formed from a gas chemistry comprising NH3. The method is particularly suitable for use in MEMS fabrication processes, such as inkjet printhead fabrication.
摘要翻译：提供了光刻胶去除方法。该方法采用由包含NH 3的气体化学物质形成的等离子体。该方法特别适用于MEMS制造工艺，例如喷墨打印头制造。

9. 发明申请

WO2007016720A1 METHOD SUITABLE FOR ETCHING HYDROPHILIC TRENCHES IN A SUBSTRATE 审中-公开
标题翻译：适用于蚀刻基底中的水解条件的方法
公开(公告)号：WO2007016720A1
公开(公告)日：2007-02-15
申请号：PCT/AU2006/000995
申请日：2006-07-17
申请人： SILVERBROOK RESEARCH PTY LTD , MCAVOY, Gregory, John , MCREYNOLDS, Darrell, LaRue , SILVERBROOK, Kia
发明人： MCAVOY, Gregory, John , MCREYNOLDS, Darrell, LaRue , SILVERBROOK, Kia
IPC分类号： H01L21/00 , B41J2/16 , H01L21/3065
CPC分类号： B41J2/1601 , B41J2/14145 , B41J2/1628 , B41J2/1631 , B41J2/1646
摘要： A method suitable for etching hydrophilic trenches into a substrate, such as silicon, is provided. The method comprises etching and sidewall passivation processes for achieving anisotropy. Sidewalls of the etched trench are made hydrophilic during the etch by virtue of a hydrophilizing dopant in a passivating gas plasma. The method is useful for etching ink supply channels in inkjet printheads.
摘要翻译：提供了适用于将亲水沟槽蚀刻到诸如硅的衬底中的方法。该方法包括用于实现各向异性的蚀刻和侧壁钝化工艺。通过钝化气体等离子体中的亲水化掺杂剂，蚀刻沟槽的侧壁在蚀刻期间被制成亲水性。该方法可用于蚀刻喷墨打印头中的墨水供应通道。

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