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1. 发明申请

WO2013062770A1 DUAL ZONE COMMON CATCH HEAT EXCHANGER/CHILLER 审中-公开
标题翻译：双区通用热交换器/冷却器
公开(公告)号：WO2013062770A1
公开(公告)日：2013-05-02
申请号：PCT/US2012/059573
申请日：2012-10-10
申请人： APPLIED MATERIALS, INC. , SILVEIRA, Fernando , MAYS, Brad L.
发明人： SILVEIRA, Fernando , MAYS, Brad L.
IPC分类号： H05H1/28 , H05H1/34 , H05H1/46
CPC分类号： F28F27/02 , F28D2021/0077 , H01J37/32724
摘要： Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a coupling each of the reservoirs to a common secondary reservoir. Heat transfer fluid is pumped from the secondary reservoir to either the hot or cold reservoir in response to a low level sensed in the reservoir. In an embodiment, both the hot and cold reservoirs are contained in a same platform as the secondary reservoir with the hot and cold reservoirs disposed above the secondary reservoir to permit the secondary reservoir to catch gravity driven overflow from either the hot or cold reservoir.
摘要翻译：通过脉冲施加加热功率和脉冲施加冷却功率来控制等离子体处理室中的温度的方法和系统。在一个实施例中，通过将每个储存器联接到公共二次储存器来部分地保持耦合到温度受控部件的热储存器和冷储存器中的每一个中的流体液位。响应于在储层中感测到的低水平，将传热流体从次级储存器泵送到热储存器或冷储存器。在一个实施例中，热蓄冷池和冷水箱都包含在与次级储存器相同的平台中，其中热储存器和冷储存器设置在次级储存器上方，以允许二级储存器从热储存器或冷储存器捕获重力驱动的溢流。

2. 发明申请

WO2011156239A2 TEMPERATURE CONTROL IN PLASMA PROCESSING APPARATUS USING PULSED HEAT TRANSFER FLUID FLOW 审中-公开
标题翻译：使用脉冲热传递流体的等离子体处理装置中的温度控制
公开(公告)号：WO2011156239A2
公开(公告)日：2011-12-15
申请号：PCT/US2011/039182
申请日：2011-06-03
申请人： APPLIED MATERIALS, INC. , TAVASSOLI, Hamid , ZHOU, Xiaoping , NEVIL, Shane, C. , BUCHBERGER, Douglas, A. , SILVEIRA, Fernando, M. , MAYS, Brad, L. , TSONG, Tina , MAHADESWARASWAMY, Chetan , PATTAR, Yashaswini, B. , NGUYEN, Duy, D. , MERRY, Walter, R.
发明人： TAVASSOLI, Hamid , ZHOU, Xiaoping , NEVIL, Shane, C. , BUCHBERGER, Douglas, A. , SILVEIRA, Fernando, M. , MAYS, Brad, L. , TSONG, Tina , MAHADESWARASWAMY, Chetan , PATTAR, Yashaswini, B. , NGUYEN, Duy, D. , MERRY, Walter, R.
IPC分类号： H05H1/24 , H05H1/46
CPC分类号： H01J37/20 , H01J37/32724 , H01J37/32908 , H01J37/32926 , H01J37/32935 , H01J2237/2001 , H05H1/34
摘要： Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. In further embodiments, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a passive leveling pipe coupling the two reservoirs. In another embodiment, digital heat transfer fluid flow control valves are opened with pulse widths dependent on a heating/cooling duty cycle value and a proportioning cycle having a duration that has been found to provide good temperature control performance.
摘要翻译：通过脉冲施加加热功率和脉冲施加冷却功率来控制等离子体处理室中的温度的方法和系统。在一个实施例中，温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。在另外的实施例中，耦合到温度受控部件的热储存器和冷储存器中的每一个中的流体水平部分地由耦合两个储存器的被动流平管道保持。在另一个实施例中，数字传热流体流量控制阀以取决于加热/冷却占空比值的脉冲宽度和具有已经被发现提供良好的温度控制性能的持续时间的配比循环打开。

3. 发明申请

WO2011093979A3 FEEDFORWARD TEMPERATURE CONTROL FOR PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体处理装置的前馈温度控制
公开(公告)号：WO2011093979A3
公开(公告)日：2011-08-04
申请号：PCT/US2010/062435
申请日：2010-12-29
申请人： APPLIED MATERIALS, INC. , MAHADESWARASWAMY, Chetan , MERRY, Walter, R. , SHOJI, Sergio, Fukuda , ZHANG, Chunlei , PATTAR, Yashaswini , NGUYEN, Duy, D. , TSONG, Tina , NEVIL, Shane, C. , BUCHBERGER, Douglas, A. Jr. , SILVEIRA, Fernando, M. , MAYS, Brad, L. , RAMASWAMY, Kartik , NOORBAKHSH, Hamid
发明人： MAHADESWARASWAMY, Chetan , MERRY, Walter, R. , SHOJI, Sergio, Fukuda , ZHANG, Chunlei , PATTAR, Yashaswini , NGUYEN, Duy, D. , TSONG, Tina , NEVIL, Shane, C. , BUCHBERGER, Douglas, A. Jr. , SILVEIRA, Fernando, M. , MAYS, Brad, L. , RAMASWAMY, Kartik , NOORBAKHSH, Hamid
IPC分类号： H05H1/46 , H01L21/3065 , H01L21/205
摘要： Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.
摘要翻译：用于控制等离子体处理室中的温度的方法和系统，其具有减少的控制器响应时间和增加的稳定性。温度控制至少部分基于从输入处理室的等离子体功率导出的前馈控制信号。补偿可归因于等离子体功率的温度干扰的前馈控制信号可以与反馈控制信号结合，以抵消测量温度和期望温度之间的误差。

4. 发明申请

WO2011093979A2 FEEDFORWARD TEMPERATURE CONTROL FOR PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备的前级温度控制
公开(公告)号：WO2011093979A2
公开(公告)日：2011-08-04
申请号：PCT/US2010062435
申请日：2010-12-29
申请人： APPLIED MATERIALS INC , MAHADESWARASWAMY CHETAN , MERRY WALTER R , SHOJI SERGIO FUKUDA , ZHANG CHUNLEI , PATTAR YASHASWINI , NGUYEN DUY D , TSONG TINA , NEVIL SHANE C , BUCHBERGER DOUGLAS A JR , SILVEIRA FERNANDO M , MAYS BRAD L , RAMASWAMY KARTIK , NOORBAKHSH HAMID
发明人： MAHADESWARASWAMY CHETAN , MERRY WALTER R , SHOJI SERGIO FUKUDA , ZHANG CHUNLEI , PATTAR YASHASWINI , NGUYEN DUY D , TSONG TINA , NEVIL SHANE C , BUCHBERGER DOUGLAS A JR , SILVEIRA FERNANDO M , MAYS BRAD L , RAMASWAMY KARTIK , NOORBAKHSH HAMID
IPC分类号： H05H1/46 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/32009 , G05B6/02 , H01J37/3244 , H01J37/32715 , H01J37/32935 , H01J2237/334 , H05H1/0081
摘要： Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.
摘要翻译：用于控制等离子体处理室中的温度的方法和系统，其具有减少的控制器响应时间和增加的稳定性。温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。补偿由于等离子体功率引起的温度的干扰的前馈控制信号可以与测量温度和期望温度之间的反馈控制信号抵消误差相组合。

5. 发明申请

WO2011156239A3 TEMPERATURE CONTROL IN PLASMA PROCESSING APPARATUS USING PULSED HEAT TRANSFER FLUID FLOW 审中-公开
标题翻译：使用脉冲传热流体的等离子体处理装置中的温度控制
公开(公告)号：WO2011156239A3
公开(公告)日：2012-01-26
申请号：PCT/US2011039182
申请日：2011-06-03
申请人： APPLIED MATERIALS INC , TAVASSOLI HAMID , ZHOU XIAOPING , NEVIL SHANE C , BUCHBERGER DOUGLAS A , SILVEIRA FERNANDO M , MAYS BRAD L , TSONG TINA , MAHADESWARASWAMY CHETAN , PATTAR YASHASWINI B , NGUYEN DUY D , MERRY WALTER R
发明人： TAVASSOLI HAMID , ZHOU XIAOPING , NEVIL SHANE C , BUCHBERGER DOUGLAS A , SILVEIRA FERNANDO M , MAYS BRAD L , TSONG TINA , MAHADESWARASWAMY CHETAN , PATTAR YASHASWINI B , NGUYEN DUY D , MERRY WALTER R
IPC分类号： H05H1/24 , H05H1/46
CPC分类号： H01J37/20 , H01J37/32724 , H01J37/32908 , H01J37/32926 , H01J37/32935 , H01J2237/2001 , H05H1/34
摘要： Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. In further embodiments, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a passive leveling pipe coupling the two reservoirs. In another embodiment, digital heat transfer fluid flow control valves are opened with pulse widths dependent on a heating/cooling duty cycle value and a proportioning cycle having a duration that has been found to provide good temperature control performance.
摘要翻译：通过脉冲施加加热功率和脉冲施加冷却功率来控制等离子体处理室中的温度的方法和系统。在一个实施例中，温度控制至少部分地基于从输入到处理室中的等离子体功率导出的前馈控制信号。在另外的实施例中，耦合到受温度控制的部件的热储存器和冷储存器中的每一个中的流体水平部分地由耦合两个储存器的被动流量管道保持。在另一个实施例中，数字传热流体流量控制阀以取决于加热/冷却占空比值的脉冲宽度和具有已经被发现提供良好温度控制性能的持续时间的配比循环打开。

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