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    • 2. 发明专利
    • FIELD EFFECT SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
    • JP2000156498A
    • 2000-06-06
    • JP33116698
    • 1998-11-20
    • MATSUO NAOTOSANYO ELECTRIC CO
    • MATSUO NAOTOHAMADA HIROYOSHI
    • H01L29/06H01L29/78
    • PROBLEM TO BE SOLVED: To provide a metal oxide semiconductor MOS transistor where a drain current can be enhanced. SOLUTION: An NMOS transistor 1 is composed of a source region 3 and a drain region 4 which are both formed of N-type impurity regions and arranged on the surface of a P-type single crystal silicon substrate 2 separating from each other by a prescribed distance, a channel region 5 formed between the regions 3 and 4, a gate oxide film 6 of SiO2 formed on the channel region 5, a gate electrode 7 formed on the gate oxide film 6, and a two-dimensional lattice 9. The two-dimensional lattice 9 is composed of fine linear oxide films 8a and 8b which cross each other at right angles. The fine linear oxide films 8a and 8b are formed of fine lines of SiO2 prescribed in line diameter and provided in a channel region 5 on the surface of the board 2. The fine linear oxide films 8a are arranged at regular intervals vertical to a direction in which a channel is extended from the source region 3 to the drain region 4, and the fine linear oxide films 8b are arranged at regular intervals in parallel with the direction in which the channels extend.