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1. 发明申请

WO1988008659A1 METHOD AND APPARATUS FOR PROCESSING WITH PLASMA 审中-公开
标题翻译：用等离子体处理的方法和装置
公开(公告)号：WO1988008659A1
公开(公告)日：1988-11-03
申请号：PCT/JP1988000401
申请日：1988-04-25
申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION , MATSUO, Seitaro , NISHIMURA, Hiroshi , KIUCHI, Mikiho
发明人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION
IPC分类号： H05H01/46
CPC分类号： H01J37/32357 , C23C16/511 , H01J27/18
摘要： An apparatus for processing with plasma wherein a gas is introduced into a plasma forming chamber (20) through a gas introduction pipe (22), input microwave from a microwave source (31) is supplied to the plasma forming chamber (20), and the gas introduced is converted into a plasma by electron cyclotron resonance. The input microwave in TE mode from a microwave source (31) is received by a tapered waveguide (60) which accomodates a dielectric board (63), and at least part of the input microwave is converted into a microwave portion in EH mode having an electric field component in the traveling direction of the input microwave. A hybrid-mode microwave containing the waves in these two modes is guided into the plasma forming chamber (20) via a microwave introduction window (27). Since the plasma forming chamber (20) receives the hybrid-mode wave of a propagation mode having an electric field component toward the traveling direction, i.e., having a longitudinal component, the microwave energy is efficiently supplied to the plasma region that satisfies the ECR condition, and absorbed in the plasma. Therefore, the plasma forming efficiency increases and the throughput of processing with plasma increases, too.

2. 发明授权

US5389154A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5389154A
公开(公告)日：1995-02-14
申请号：US81934
申请日：1993-06-24
申请人： Nishimura Hiroshi , Ono Toshiro , Matsuo Seitaro
发明人： Nishimura Hiroshi , Ono Toshiro , Matsuo Seitaro
IPC分类号： H01J37/32 , C23C16/50
CPC分类号： H01J37/32211 , H01J37/32192 , H01J37/32238 , H01J37/32623 , H01J37/32678
摘要： In a plasma processing apparatus, a second microwave guiding unit has at least one vacuum waveguide with a dielectric window and an opening being formed on the side of the microwave introducing hole. The vacuum waveguide is arranged at a position where an external magnetic field applied from an external magnetic field applying unit is stronger than an ECR condition, and causes the microwave guided from a first microwave guiding unit to propagate through the dielectric window in a direction perpendicular to the external magnetic field such that the electric field of the microwave is parallel to the external magnetic field applied to the second microwave guiding unit by the external magnetic field applying unit. The dielectric window is arranged at a position at which at least a portion of the dielectric window cannot been seen directly from the microwave introducing hole. The propagating direction of the microwave is changed at a position immediately above the plasma chamber, at which the external magnetic field strength is higher than the ECR condition, thereby introducing, through the opening, the microwave to the microwave introducing hole along the external magnetic field, whereby converting a raw material in the plasma chamber into plasma by electron cyclotron resonance (ECR).
摘要翻译：在等离子体处理装置中，第二微波引导单元具有至少一个具有电介质窗口的真空波导和在微波导入孔一侧形成的开口。真空波导布置在从外部磁场施加单元施加的外部磁场比ECR状态更强的位置，并且使从第一微波引导单元引导的微波沿着垂直于...的方向传播通过电介质窗口外部磁场使得微波的电场平行于通过外部磁场施加单元施加到第二微波引导单元的外部磁场。电介质窗设置在电介质窗口的至少一部分不能直接从微波导入孔看到的位置。微波的传播方向在外部磁场强度高于ECR条件的等离子体室正上方的位置改变，从而通过开口将微波沿外部磁场引入微波导入孔，由此通过电子回旋共振（ECR）将等离子体室中的原料转化为等离子体。

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