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1. 发明申请

WO2004044965A2 METHOD OF PRODUCING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：生产半导体器件的方法
公开(公告)号：WO2004044965A2
公开(公告)日：2004-05-27
申请号：PCT/JP0314123
申请日：2003-11-05
申请人： FUJITSU LTD , MARUYAMA KENJI , KURASAWA MASAKI , KONDO MASAO , ARIMOTO YOSHIHIRO
发明人： MARUYAMA KENJI , KURASAWA MASAKI , KONDO MASAO , ARIMOTO YOSHIHIRO
IPC分类号： H01L27/105 , H01L21/02 , H01L21/8246 , H01L27/115
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55
摘要： ABSTRACT A semiconductor device incorporating a capacitor structure that includes a ferroelectric thin film is obtained by forming, on a single crystalline substrate 10 having a surface suited for growing thereon a thin film layer of ferroelectric single crystal having a plane (111), a ferroelectric single crystalline thin film 12' containing Pb and having a plane (111) in parallel with the surface of the substrate (or a ferroelectric polycrystalline thin film containing Pb and oriented parallel with the plane (111) in parallel with the surface of the substrate) and part 16 of a circuit of a semiconductor device, to thereby fabricate the single crystalline substrate 10 having said ferroelectric thin film containing Pb and said part of the circuit of the semiconductor device; and bonding said single crystalline substrate 10 to another substrate on which the other circuit of the semiconductor device has been formed in advance, to couple the two circuits together. The capacitor in the semiconductor device thus obtained includes a ferroelectric thin film having a large amount of polarizing charge. The semiconductor device can be used as a highly reliable nonvolatile memory.
摘要翻译：摘要一种结合了包括铁电薄膜的电容器结构的半导体器件是通过在具有适于在其上生长铁电单晶的薄膜层的单晶基片10上形成具有平面（111），铁电单片（111）平行于衬底表面（或含有Pb的铁电多晶薄膜并平行于与衬底表面平行的平面（111）取向）的非结晶薄膜12'，以及由此制造具有所述含Pb的铁电薄膜和所述半导体器件的所述部分电路的单晶衬底10; 并且将所述单晶衬底10结合到其上预先形成了所述半导体器件的另一电路的另一衬底以将所述两个电路耦合在一起。如此获得的半导体器件中的电容器包括具有大量极化电荷的铁电薄膜。该半导体器件可以用作高度可靠的非易失性存储器。

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