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1. 发明授权

US08741715B2 Gate electrodes for millimeter-wave operation and methods of fabrication 有权
标题翻译：用于毫米波操作的栅电极和制造方法
公开(公告)号：US08741715B2
公开(公告)日：2014-06-03
申请号：US12432478
申请日：2009-04-29
申请人： Marcia Moore , Sten Heikman
发明人： Marcia Moore , Sten Heikman
IPC分类号： H01L21/336
CPC分类号： H01L21/0272 , H01L21/28587 , H01L29/66462
摘要： A transistor device having a tiered gate electrode fabricated with methods using a triple layer resist structure. The triple layer resist stack is deposited on a semiconductor structure. An exposure pattern is written onto the resist stack using an e-beam writer, for example. The exposure dose is non-uniform across the device. Portions of the three resist layers are removed with a sequential development process, resulting in tiered resist structure. A conductive material is deposited to form the gate electrode. The resulting “Air-T” gate also has a three-tiered structure. The fabrication process is well-suited for the production of gates small enough for use in millimeter wave devices.
摘要翻译：具有使用三层抗蚀剂结构的方法制造的分层栅电极的晶体管器件。三层抗蚀剂叠层沉积在半导体结构上。例如，使用电子束写入器将曝光图案写入抗蚀剂叠层。曝光剂量在整个装置上是不均匀的。通过顺序显影处理去除三个抗蚀剂层的部分，产生分层的抗蚀剂结构。沉积导电材料以形成栅电极。所形成的“Air-T”门也具有三层结构。制造工艺非常适合生产足够小以用于毫米波器件的门。

2. 发明授权

US08592867B2 Wide bandgap HEMTS with source connected field plates 有权
标题翻译：宽带隙HEMTS与源连接的现场板
公开(公告)号：US08592867B2
公开(公告)日：2013-11-26
申请号：US13072449
申请日：2011-03-25
申请人： Yifeng Wu , Primit Parikh , Umesh Mishra , Marcia Moore
发明人： Yifeng Wu , Primit Parikh , Umesh Mishra , Marcia Moore
IPC分类号： H01L29/66 , H01L29/02
CPC分类号： H01L29/402 , H01L29/2003 , H01L29/41725 , H01L29/42316 , H01L29/7787
摘要： A HEMT comprising a plurality of active semiconductor layers formed on a substrate. Source electrode, drain electrode, and gate are formed in electrical contact with the plurality of active layers. A spacer layer is formed on at least a portion of a surface of said plurality of active layers and covering the gate. A field plate is formed on the spacer layer and electrically connected to the source electrode, wherein the field plate reduces the peak operating electric field in the HEMT.
摘要翻译：一种HEMT，其包括在基板上形成的多个有源半导体层。源电极，漏电极和栅极形成为与多个有源层电接触。间隔层形成在所述多个有源层的表面的至少一部分上并覆盖栅极。在间隔层上形成场板，并与源电极电连接，其中场板减小HEMT中的峰值工作电场。

3. 发明申请

US20110169054A1 WIDE BANDGAP HEMTS WITH SOURCE CONNECTED FIELD PLATES 有权
标题翻译：具有源连接的现场板的宽带带
公开(公告)号：US20110169054A1
公开(公告)日：2011-07-14
申请号：US13072449
申请日：2011-03-25
申请人： Yifeng Wu , Primit Parikh , Umesh Mishra , Marcia Moore
发明人： Yifeng Wu , Primit Parikh , Umesh Mishra , Marcia Moore
IPC分类号： H01L29/778
CPC分类号： H01L29/402 , H01L29/2003 , H01L29/41725 , H01L29/42316 , H01L29/7787
摘要： A HEMT comprising a plurality of active semiconductor layers formed on a substrate. Source electrode, drain electrode, and gate are formed in electrical contact with the plurality of active layers. A spacer layer is formed on at least a portion of a surface of said plurality of active layers and covering the gate. A field plate is formed on the spacer layer and electrically connected to the source electrode, wherein the field plate reduces the peak operating electric field in the HEMT.
摘要翻译：一种HEMT，其包括在基板上形成的多个有源半导体层。源电极，漏电极和栅极形成为与多个有源层电接触。间隔层形成在所述多个有源层的表面的至少一部分上并覆盖栅极。在间隔层上形成场板，并与源电极电连接，其中场板减小HEMT中的峰值工作电场。

4. 发明授权

US07573078B2 Wide bandgap transistors with multiple field plates 有权
标题翻译：具有多个场板的宽带隙晶体管
公开(公告)号：US07573078B2
公开(公告)日：2009-08-11
申请号：US10976422
申请日：2004-10-29
申请人： Yifeng Wu , Primit Parikh , Umesh Mishra , Marcia Moore
发明人： Yifeng Wu , Primit Parikh , Umesh Mishra , Marcia Moore
IPC分类号： H01L29/778
CPC分类号： H01L29/404 , H01L29/2003 , H01L29/7787
摘要： A transistor comprising a plurality of active semiconductor layers on a substrate, with source and drain electrodes in contact with the semiconductor layers. A gate is formed between the source and drain electrodes and on the plurality of semiconductor layers. A plurality of field plates are arranged over the semiconductor layers, each of which extends from the edge of the gate toward the drain electrode, and each of which is isolated from said semiconductor layers and from the others of the field plates. The topmost of the field plates is electrically connected to the source electrode and the others of the field plates are electrically connected to the gate or the source electrode.
摘要翻译：一种晶体管，包括在衬底上的多个有源半导体层，源极和漏极与半导体层接触。在源极和漏极之间以及多个半导体层上形成栅极。多个场板布置在半导体层之上，每个场板从栅极的边缘延伸到漏极，并且其中的每一个与所述半导体层和场板的其它层隔离。场板的最顶端电连接到源电极，而另外的场板电连接到栅极或源电极。

5. 发明授权

US08669589B2 Robust transistors with fluorine treatment 有权
标题翻译：具有氟处理的坚固晶体管
公开(公告)号：US08669589B2
公开(公告)日：2014-03-11
申请号：US13112285
申请日：2011-05-20
申请人： Yifeng Wu , Marcia Moore , Tim Wisleder , Primit Parikh
发明人： Yifeng Wu , Marcia Moore , Tim Wisleder , Primit Parikh
IPC分类号： H01L29/66
CPC分类号： H01L29/7783 , H01L29/2003 , H01L29/207 , H01L29/402 , H01L29/66462
摘要： A semiconductor device, and particularly a high electron mobility transistor (HEMT), having a plurality of epitaxial layers and experiencing an operating (E) field. A negative ion region in the epitaxial layers to counter the operating (E) field. One method for fabricating a semiconductor device comprises providing a substrate and growing epitaxial layers on the substrate. Negative ions are introduced into the epitaxial layers to form a negative ion region to counter operating electric (E) fields in the semiconductor device. Contacts can be deposited on the epitaxial layers, either before or after formation of the negative ion region.
摘要翻译：具有多个外延层并经历操作（E）场的半导体器件，特别是高电子迁移率晶体管（HEMT）。在外延层中的负离子区域以对抗操作（E）场。制造半导体器件的一种方法包括在衬底上提供衬底和生长外延层。将负离子引入外延层中以形成负离子区域以对抗半导体器件中的电（E）场。可以在形成负离子区之前或之后将触点沉积在外延层上。

6. 发明申请

US20100276698A1 GATE ELECTRODES FOR MILLIMETER-WAVE OPERATION AND METHODS OF FABRICATION 有权
标题翻译：用于微波操作的门电极和制造方法
公开(公告)号：US20100276698A1
公开(公告)日：2010-11-04
申请号：US12432478
申请日：2009-04-29
申请人： Marcia Moore , Sten Heikman
发明人： Marcia Moore , Sten Heikman
IPC分类号： H01L29/20 , H01L21/283 , H01L21/302
CPC分类号： H01L21/0272 , H01L21/28587 , H01L29/66462
摘要： A transistor device having a tiered gate electrode fabricated with methods using a triple layer resist structure. The triple layer resist stack is deposited on a semiconductor structure. An exposure pattern is written onto the resist stack using an e-beam writer, for example. The exposure dose is non-uniform across the device. Portions of the three resist layers are removed with a sequential development process, resulting in tiered resist structure. A conductive material is deposited to form the gate electrode. The resulting “Air-T” gate also has a three-tiered structure. The fabrication process is well-suited for the production of gates small enough for use in millimeter wave devices.
摘要翻译：具有使用三层抗蚀剂结构的方法制造的分层栅电极的晶体管器件。三层抗蚀剂叠层沉积在半导体结构上。例如，使用电子束写入器将曝光图案写入抗蚀剂叠层。曝光剂量在整个装置上是不均匀的。通过顺序显影处理去除三个抗蚀剂层的部分，产生分层的抗蚀剂结构。沉积导电材料以形成栅电极。所形成的“Air-T”门也具有三层结构。制造工艺非常适合生产足够小以用于毫米波器件的门。

7. 发明申请

US20090236635A1 WIDE BANDGAP HEMTS WITH SOURCE CONNECTED FIELD PLATES 有权
标题翻译：具有源连接的现场板的宽带带
公开(公告)号：US20090236635A1
公开(公告)日：2009-09-24
申请号：US12437505
申请日：2009-05-07
申请人： Yifeng Wu , Primit Parikh , Umesh Mishra , Marcia Moore
发明人： Yifeng Wu , Primit Parikh , Umesh Mishra , Marcia Moore
IPC分类号： H01L29/778 , H01L29/80
CPC分类号： H01L29/402 , H01L29/2003 , H01L29/41725 , H01L29/42316 , H01L29/7787
摘要： A HEMT comprising an active region comprising a plurality of active semiconductor layers formed on a substrate. Source electrode, drain electrode, and gate are formed in electrical contact with the active region. A spacer layer is formed on at least a portion of a surface of said active region and covering the gate. A field plate is formed on the spacer layer and electrically connected to the source electrode, wherein the field plate reduces the peak operating electric field in the HEMT.
摘要翻译：一种HEMT，其包括有源区，该有源区包括在基板上形成的多个有源半导体层。源电极，漏电极和栅极形成为与有源区电接触。间隔层形成在所述有源区域的表面的至少一部分上并覆盖栅极。在间隔层上形成场板，并与源电极电连接，其中场板减小HEMT中的峰值工作电场。

8. 发明授权

US07550783B2 Wide bandgap HEMTs with source connected field plates 有权
标题翻译：宽带隙HEMT与源连接的现场板
公开(公告)号：US07550783B2
公开(公告)日：2009-06-23
申请号：US10958970
申请日：2004-10-04
申请人： Yifeng Wu , Primit Parikh , Umesh Mishra , Marcia Moore
发明人： Yifeng Wu , Primit Parikh , Umesh Mishra , Marcia Moore
IPC分类号： H01L29/778
CPC分类号： H01L29/402 , H01L29/2003 , H01L29/41725 , H01L29/42316 , H01L29/7787
摘要： A HEMT comprising a plurality of active semiconductor layers formed on a substrate. Source electrode, drain electrode, and gate are formed in electrical contact with the plurality of active layers. A spacer layer is formed on at least a portion of a surface of said plurality of active layers and covering the gate. A field plate is formed on the spacer layer and electrically connected to the source electrode, wherein the field plate reduces the peak operating electric field in the HEMT.
摘要翻译：一种HEMT，其包括在基板上形成的多个有源半导体层。源电极，漏电极和栅极形成为与多个有源层电接触。间隔层形成在所述多个有源层的表面的至少一部分上并覆盖栅极。在间隔层上形成场板，并与源电极电连接，其中场板减小HEMT中的峰值工作电场。

9. 发明授权

US07388236B2 High efficiency and/or high power density wide bandgap transistors 有权
标题翻译：高效率和/或高功率密度宽带隙晶体管
公开(公告)号：US07388236B2
公开(公告)日：2008-06-17
申请号：US11392114
申请日：2006-03-29
申请人： Yifeng Wu , Primit Parikh , Umesh Mishra , Marcia Moore
发明人： Yifeng Wu , Primit Parikh , Umesh Mishra , Marcia Moore
IPC分类号： H01L29/43
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/404 , H01L29/42316
摘要： Field effect transistors having a power density of greater than 40 W/mm when operated at a frequency of at least 4 GHz are provided. The power density of at least 40 W/mm may be provided at a drain voltage of 135 V. Transistors with greater than 60% PAE and a power density of at least 5 W/mm when operated at 10 GHz at drain biases from 28 V to 48 V are also provided.
摘要翻译：提供了以至少4GHz的频率工作时功率密度大于40W / mm的场效应晶体管。在135V的漏极电压下可以提供至少40W / mm的功率密度。当在10GHz下工作时，具有大于60％PAE的功率密度至少为5W / mm的功率密度，漏极偏压为28V 至48 V。

10. 发明申请

US20070194354A1 Nitride based transistors for millimeter wave operation 有权
标题翻译：用于毫米波操作的基于氮化物的晶体管
公开(公告)号：US20070194354A1
公开(公告)日：2007-08-23
申请号：US11360876
申请日：2006-02-23
申请人： Yifeng Wu , Primit Parikh , Marcia Moore
发明人： Yifeng Wu , Primit Parikh , Marcia Moore
IPC分类号： H01L29/76
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/207 , H01L29/402
摘要： Field effect transistors having a power density of greater than 5 W/mm when operated at a frequency of at least 30 GHz are provided. The power density of at least 5 W/mm may be provided at a drain voltage of 28 V. Transistors with a power density of at least 8 W/mm when operated at 40 GHz at a drain voltage of 28 V are also provided.
摘要翻译：提供了以至少30GHz的频率工作时功率密度大于5W / mm的场效应晶体管。也可以在28V的漏极电压下提供至少5W / mm的功率密度。还提供了在28V的漏极电压下以40GHz工作时功率密度至少为8W / mm的晶体管。

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