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1. 发明申请

WO2007100933A3 ETCH SELECTIVITY ENHANCEMENT, DEPOSITION QUALITY EVALUATION, STRUCTURAL MODIFICATION AND THREE-DIMENSIONAL IMAGING USING ELECTRON BEAM ACTIVATED CHEMICAL ETCH 审中-公开
标题翻译： ETCH选择性增强，沉积质量评估，结构改性和使用电子束激活化学蚀刻的三维成像
公开(公告)号：WO2007100933A3
公开(公告)日：2008-04-10
申请号：PCT/US2007060503
申请日：2007-01-12
申请人： KLA TENCOR TECH CORP , NASSER-GHODSI MEHRAN , GOTKIS YEHIEL , LOPATIN SERGEY , PICKARD GARRETT , GARCIA RUDY F , YU MING LUN , KRZECZOWSKI KENNETH , LENT MATTHEW , HUANG CHRIS , MACDONALD NILES K , BOROWICZ STANISLAW MAREK , CHUANG TZU-CHIN
发明人： NASSER-GHODSI MEHRAN , GOTKIS YEHIEL , LOPATIN SERGEY , PICKARD GARRETT , GARCIA RUDY F , YU MING LUN , KRZECZOWSKI KENNETH , LENT MATTHEW , HUANG CHRIS , MACDONALD NILES K , BOROWICZ STANISLAW MAREK , CHUANG TZU-CHIN
IPC分类号： C23F1/00 , A61N5/00 , B44C1/22 , G21K7/00
CPC分类号： G03F7/2043 , H01J2237/31732 , H01J2237/3174 , H01J2237/31744 , H01L21/02057 , H01L21/3065 , H01L21/31116 , H01L21/32136
摘要： Etch selectivity enhancement during electron beam activated chemical etch (EBACE), methods and apparatus for evaluating the quality of structures on an integrated circuit wafer using EBACE, a method for modifying a surface of a substrate (or a portion there of), methods and apparatus for imaging a structure and an associated processor-readable medium are disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the target in the vicinity of the gas composition, an interaction between the electron beam and the gas composition etches a portion of the target exposed to both the gas composition and the electron beam.
摘要翻译：电子束激活化学蚀刻（EBACE）中的蚀刻选择性增强，用于使用EBACE评估集成电路晶片上的结构质量的方法和装置，用于改变衬底（或其部分）的表面的方法，方法和装置用于对结构进行成像和相关联的处理器可读介质。当气体组合物和/或靶暴露于电子束时，靶或其部分可暴露于蚀刻靶的类型的气体组合物。通过在气体组合物附近引导电子束朝向靶，电子束和气体组成之间的相互作用会蚀刻暴露于气体组成和电子束两者的靶的一部分。

2. 发明申请

WO0219391A3 APPARATUS AND METHOD FOR FLOE OF PROCESS GAS IN AN ULTRA-CLEAN ENVIRONMENT 审中-公开
标题翻译：在超清洁环境中工艺气体流动的装置和方法
公开(公告)号：WO0219391A3
公开(公告)日：2002-06-13
申请号：PCT/US0141913
申请日：2001-08-28
申请人： REFLECTIVITY INC , PATEL SATYADEV , SCHAADT GREGORY P , MACDONALD DOUGLAS B , MACDONALD NILES K
发明人： PATEL SATYADEV , SCHAADT GREGORY P , MACDONALD DOUGLAS B , MACDONALD NILES K
IPC分类号： H01L21/302 , C03C15/00 , C25F3/12 , H01L20060101 , H01L21/00
CPC分类号： H01L21/67063 , C03C15/00 , C03C2218/33 , H01L21/67017
摘要： Processes for the addition or removal of a layer or region from a workpiece (14) material by contact with a process gas, in the manufacture of a microstructure, are enhanced by the use of a recirculation of the process gas. Recirculation is effected by a pump (18) that has no sliding or abrading parts that contact the process gas nor any wet (such as oil) seals or purge gas in the pump (18). Improved processing can be achieved by a process chamber (15) that contains a baffle (16), a perforated plate (17), or both, appropriately situated in the chamber (15) to deflect the incoming process gas and distribute it over the workpiece (14) surface. In certain embodiments, a diluent gas is added to the recirculation loop (36) and continuously recirculated therein, followed by the bleeding of the process gas (such as an etchant gas) into the recirculation loop (36). Also, cooling of the process gas, etching chamber (15) and/or sample platen can aid the etching process. The method is particularly useful for adding to or removing material from a sample (14) of microscopic dimensions.
摘要翻译：通过使用工艺气体的再循环来增强在制造微结构时通过与工艺气体接触从工件（14）材料添加或去除层或区域的工艺。再循环通过泵（18）实现，泵（18）没有与工艺气体接触的滑动或研磨部件以及泵（18）中的任何湿的（例如油）密封件或吹扫气体。改进的处理可以通过包含挡板（16），多孔板（17）或两者的处理室（15）来实现，该处理室适当地位于室（15）中，以偏转进入的处理气体并将其分布在工件（14）表面。在某些实施方案中，稀释气体被添加到再循环回路（36）中并在其中连续再循环，随后将工艺气体（例如蚀刻剂气体）渗出到再循环回路（36）中。此外，工艺气体，蚀刻室（15）和/或样品台的冷却可以帮助蚀刻工艺。该方法对于从微观尺寸的样品（14）添加或除去材料特别有用。

3. 发明申请

WO2007100933A2 ETCH SELECTIVITY ENHANCEMENT, DEPOSITION QUALITY EVALUATION, STRUCTURAL MODIFICATION AND THREE-DIMENSIONAL IMAGING USING ELECTRON BEAM ACTIVATED CHEMICAL ETCH 审中-公开
标题翻译： ETCH选择性增强，沉积质量评估，结构改性和使用电子束激活化学蚀刻的三维成像
公开(公告)号：WO2007100933A2
公开(公告)日：2007-09-07
申请号：PCT/US2007/060503
申请日：2007-01-12
申请人： KLA TENCOR TECHNOLOGIES CORPORATION , NASSER-GHODSI, Mehran , GOTKIS, Yehiel , LOPATIN, Sergey , PICKARD, Garrett , GARCIA, Rudy F. , YU, Ming Lun , KRZECZOWSKI, Kenneth , LENT, Matthew , HUANG, Chris , MACDONALD, Niles K. , BOROWICZ, Stanislaw Marek , CHUANG, Tzu-chin
发明人： NASSER-GHODSI, Mehran , GOTKIS, Yehiel , LOPATIN, Sergey , PICKARD, Garrett , GARCIA, Rudy F. , YU, Ming Lun , KRZECZOWSKI, Kenneth , LENT, Matthew , HUANG, Chris , MACDONALD, Niles K. , BOROWICZ, Stanislaw Marek , CHUANG, Tzu-chin
IPC分类号： C23F1/00 , A61N5/00 , G21G5/00
CPC分类号： G03F7/2043 , H01J2237/31732 , H01J2237/3174 , H01J2237/31744 , H01L21/02057 , H01L21/3065 , H01L21/31116 , H01L21/32136
摘要： Etch selectivity enhancement during electron beam activated chemical etch (EBACE), methods and apparatus for evaluating the quality of structures on an integrated circuit wafer using EBACE, a method for modifying a surface of a substrate (or a portion there of), methods and apparatus for imaging a structure and an associated processor-readable medium are disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the target in the vicinity of the gas composition, an interaction between the electron beam and the gas composition etches a portion of the target exposed to both the gas composition and the electron beam.
摘要翻译：电子束激活化学蚀刻（EBACE）中的蚀刻选择性增强，用于使用EBACE评估集成电路晶片上的结构质量的方法和装置，用于改变衬底（或其部分）的表面的方法，方法和装置用于对结构进行成像和相关联的处理器可读介质。当气体组合物和/或靶暴露于电子束时，靶或其部分可暴露于蚀刻靶的类型的气体组合物。通过在气体组合物附近引导电子束朝向靶，电子束和气体组成之间的相互作用会蚀刻暴露于气体组成和电子束两者的靶的一部分。

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