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1. 发明申请

US20120329213A1 FLEXIBLE ELECTRONIC DEVICE AND METHOD FOR THE FABRICATION OF SAME 有权
标题翻译：柔性电子器件及其制造方法
公开(公告)号：US20120329213A1
公开(公告)日：2012-12-27
申请号：US13533224
申请日：2012-06-26
申请人： Vincenzo VINCIGUERRA , Luigi Giuseppe OCCHIPINTI
发明人： Vincenzo VINCIGUERRA , Luigi Giuseppe OCCHIPINTI
IPC分类号： H01L21/78
CPC分类号： H01L21/6835 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L22/00 , H01L22/14 , H01L23/49816 , H01L23/4985 , H01L23/5387 , H01L24/16 , H01L24/81 , H01L24/83 , H01L24/95 , H01L2221/68318 , H01L2221/68327 , H01L2221/68345 , H01L2221/68377 , H01L2221/68381 , H01L2224/2929 , H01L2224/293 , H01L2224/81001 , H01L2224/81191 , H01L2224/81192 , H01L2224/81203 , H01L2224/81801 , H01L2224/83851 , H01L2924/01322 , H01L2924/014 , H01L2924/15788 , H01L2924/3512 , H01L2924/00 , H01L2924/00014
摘要： A semiconductor device may have a thickness, such that the semiconductor devices are not flexible, and may be bonded and electrically coupled on a flexible substrate. After this bonding, the semiconductor device may be thinned so as to be rendered flexible.
摘要翻译：半导体器件可以具有厚度，使得半导体器件不是柔性的，并且可以结合并电耦合在柔性衬底上。在该接合之后，可以使半导体器件变薄以便变得柔性。

2. 发明授权

US09006796B2 Method for manufacturing a sensor device of a gaseous substance of interest 有权
标题翻译：制造感兴趣的气态物质的传感器装置的方法
公开(公告)号：US09006796B2
公开(公告)日：2015-04-14
申请号：US13278942
申请日：2011-10-21
申请人： Luigi Giuseppe Occhipinti
发明人： Luigi Giuseppe Occhipinti
IPC分类号： G01N27/12 , G01N27/414
CPC分类号： G01N27/4141
摘要： A method manufactures a sensor device for sensing a gaseous substance and includes a thin film transistor, which includes a source electrode, a drain electrode and a gate electrode; and an element sensitive to the gaseous substance. In particular, the method includes: forming a first metallic layer on a substrate; defining and patterning the first metallic layer for realizing the gate electrode; depositing a dielectric layer above the gate electrode; depositing a second metallic layer above the layer of dielectric material, defining and patterning the second metallic layer for realizing the source electrode and the drain electrode, and forming the sensitive element by filling a channel region of the thin film transistor with an active layer sensitive to the gaseous substance.
摘要翻译：一种制造用于感测气态物质的传感器装置，包括一个薄膜晶体管，它包括一个源电极，一个漏电极和一个栅电极; 和对气态物质敏感的元素。特别地，该方法包括：在基板上形成第一金属层; 限定和构图第一金属层以实现栅电极; 在栅极电极上沉积介电层; 在介电材料层上方沉积第二金属层，限定和图案化用于实现源电极和漏电极的第二金属层，以及通过用薄膜晶体管的沟道区域填充敏感元件来形成敏感元件，气态物质。

3. 发明申请

US20120096928A1 METHOD FOR MANUFACTURING A SENSOR DEVICE OF A GASEOUS SUBSTANCE OF INTEREST 有权
标题翻译：制造气体传感器装置的方法
公开(公告)号：US20120096928A1
公开(公告)日：2012-04-26
申请号：US13278942
申请日：2011-10-21
申请人： Luigi Giuseppe Occhipinti
发明人： Luigi Giuseppe Occhipinti
IPC分类号： H01L29/786 , G01N27/00 , H01L21/34
CPC分类号： G01N27/4141
摘要： A method manufactures a sensor device for sensing a gaseous substance and includes a thin film transistor, which includes a source electrode, a drain electrode and a gate electrode; and an element sensitive to the gaseous substance. In particular, the method includes: forming a first metallic layer on a substrate; defining and patterning the first metallic layer for realizing the gate electrode; depositing a dielectric layer above the gate electrode; depositing a second metallic layer above the layer of dielectric material, defining and patterning the second metallic layer for realizing the source electrode and the drain electrode, and forming the sensitive element by filling a channel region of the thin film transistor with an active layer sensitive to the gaseous substance.
摘要翻译：一种制造用于感测气态物质的传感器装置，包括一个薄膜晶体管，它包括一个源电极，一个漏电极和一个栅电极; 以及对气态物质敏感的元素。特别地，该方法包括：在基板上形成第一金属层; 限定和构图第一金属层以实现栅电极; 在栅极电极上沉积介电层; 在介电材料层上方沉积第二金属层，限定和图案化用于实现源电极和漏电极的第二金属层，以及通过用薄膜晶体管的沟道区域填充敏感元件来形成敏感元件，气态物质。

4. 发明申请

US20110027986A1 LOW COST METHOD OF FABRICATION OF VERTICAL INTERCONNECTIONS COMBINED TO METAL TOP ELECTRODES 有权
标题翻译：与金属顶电极组合的垂直互连的低成本方法
公开(公告)号：US20110027986A1
公开(公告)日：2011-02-03
申请号：US12844347
申请日：2010-07-27
申请人： Raffaele VECCHIONE , Luigi Giuseppe OCCHIPINTI , Nunzia MALAGNINO , Rossana SCALDAFERRI , Maria Viviana VOLPE
发明人： Raffaele VECCHIONE , Luigi Giuseppe OCCHIPINTI , Nunzia MALAGNINO , Rossana SCALDAFERRI , Maria Viviana VOLPE
IPC分类号： H01L21/768
CPC分类号： H01L51/0022
摘要： A method is for forming a vertical interconnection through a dielectric layer between upper and lower electrically conductive layers of an integrated circuit. The method includes forming an opening through the dielectric layer and placing a solidifiable electrically conductive filler into the opening via a printing technique. The solidifiable electrically conductive filler is solidified to thereby form a solidified electrically conducting filler in the opening. A metallization layer is formed over the dielectric layer and the solidified electrically conducting filler to thereby form the vertical interconnection through the dielectric layer between the upper and lower electrically conductive layers of the integrated circuit.
摘要翻译：一种用于通过集成电路的上导电层和下导电层之间的介电层形成垂直互连的方法。该方法包括通过介电层形成开口，并通过印刷技术将可固化的导电填料放入开口中。可凝固的导电填料固化，从而在开口中形成凝固的导电填料。在电介质层和凝固的导电填料上形成金属化层，从而通过集成电路的上导电层和下导电层之间的介电层形成垂直互连。

5. 发明授权

US08764997B2 Surface treatment of an organic or inorganic substrate for enhancing stability of a lithographically defined deposited metal layer 有权
标题翻译：有机或无机基材的表面处理，用于增强光刻定义的沉积金属层的稳定性
公开(公告)号：US08764997B2
公开(公告)日：2014-07-01
申请号：US12835011
申请日：2010-07-13
申请人： Fabrizio Porro , Luigi Giuseppe Occhipinti
发明人： Fabrizio Porro , Luigi Giuseppe Occhipinti
IPC分类号： H01L21/302 , H01L21/461 , H01L21/311 , H01B13/00 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H05K3/389 , H05K3/061 , H05K3/381 , H05K2203/0108 , H05K2203/0537 , H05K2203/095 , H05K2203/1173 , H05K2203/122
摘要： A method of metal deposition may include chemically modifying a surface of a substrate to make the surface hydrophobic. The method may further include depositing a layer of metal over the hydrophobic surface and masking at least a portion of the deposited metal layer to define a conductive metal structure. The method may also include using an etching agent to etch unmasked portions of the deposited metal layer.
摘要翻译：金属沉积的方法可以包括化学改性基底的表面以使表面疏水。该方法还可以包括在疏水表面上沉积金属层并且掩蔽沉积的金属层的至少一部分以限定导电金属结构。该方法还可以包括使用蚀刻剂来蚀刻沉积的金属层的未掩模部分。

6. 发明授权

US08062976B2 Low cost method of fabrication of vertical interconnections combined to metal top electrodes 有权
标题翻译：制造与金属顶电极组合的垂直互连的低成本方法
公开(公告)号：US08062976B2
公开(公告)日：2011-11-22
申请号：US12844347
申请日：2010-07-27
申请人： Raffaele Vecchione , Luigi Giuseppe Occhipinti , Nunzia Malagnino , Rossana Scaldaferri , Maria Viviana Volpe
发明人： Raffaele Vecchione , Luigi Giuseppe Occhipinti , Nunzia Malagnino , Rossana Scaldaferri , Maria Viviana Volpe
IPC分类号： H01L21/4763
CPC分类号： H01L51/0022
摘要： A method is for forming a vertical interconnection through a dielectric layer between upper and lower electrically conductive layers of an integrated circuit. The method includes forming an opening through the dielectric layer and placing a solidifiable electrically conductive filler into the opening via a printing technique. The solidifiable electrically conductive filler is solidified to thereby form a solidified electrically conducting filler in the opening. A metallization layer is formed over the dielectric layer and the solidified electrically conducting filler to thereby form the vertical interconnection through the dielectric layer between the upper and lower electrically conductive layers of the integrated circuit.
摘要翻译：一种用于通过集成电路的上导电层和下导电层之间的介电层形成垂直互连的方法。该方法包括通过介电层形成开口，并通过印刷技术将可固化的导电填料放入开口中。可凝固的导电填料固化，从而在开口中形成凝固的导电填料。在电介质层和凝固的导电填料上形成金属化层，从而通过集成电路的上导电层和下导电层之间的介电层形成垂直互连。

7. 发明申请

US20110006032A1 SURFACE TREATMENT OF AN ORGANIC OR INORGANIC SUBSTRATE FOR ENHANCING STABILITY OF A LITHOGRAPHICALLY DEFINED DEPOSITED METAL LAYER 有权
标题翻译：有机或无机基体的表面处理，用于提高定向沉积金属层的稳定性
公开(公告)号：US20110006032A1
公开(公告)日：2011-01-13
申请号：US12835011
申请日：2010-07-13
申请人： Fabrizio PORRO , Luigi Giuseppe Occhipinti
发明人： Fabrizio PORRO , Luigi Giuseppe Occhipinti
IPC分类号： H05K3/06
CPC分类号： H05K3/389 , H05K3/061 , H05K3/381 , H05K2203/0108 , H05K2203/0537 , H05K2203/095 , H05K2203/1173 , H05K2203/122
摘要： A method of metal deposition may include chemically modifying a surface of a substrate to make the surface hydrophobic. The method may further include depositing a layer of metal over the hydrophobic surface and masking at least a portion of the deposited metal layer to define a conductive metal structure. The method may also include using an etching agent to etch unmasked portions of the deposited metal layer.
摘要翻译：金属沉积的方法可以包括化学改性基底的表面以使表面疏水。该方法还可以包括在疏水表面上沉积金属层并且掩蔽沉积的金属层的至少一部分以限定导电金属结构。该方法还可以包括使用蚀刻剂来蚀刻沉积的金属层的未掩模部分。

8. 发明专利

GB2539224A Method of forming a chemical sensor device and device 未知
公开(公告)号：GB2539224A
公开(公告)日：2016-12-14
申请号：GB201510036
申请日：2015-06-09
申请人： LUIGI GIUSEPPE OCCHIPINTI , CAMBRIDGE INNOVATION TECH CONSULTING LTD
发明人： LUIGI GIUSEPPE OCCHIPINTI
IPC分类号： G01N33/84 , A61B5/1486 , C12Q1/00 , G01N27/327
摘要： The present disclosure relates to a method for detecting simultaneously the pH and the concentration of chemical substances in a solution (e.g. a biological fluid). The chemical may be glucose, lactate, or carbon dioxide. The method utilises a multi-electrode sensing device 100 with two or more electrodes, wherein a first electrode is used for pH detection, and wherein further working electrodes are enzyme-coated electrodes for sensing the chemical (e.g. glucose or lactate), wherein the measurements from the enzyme electrodes are compensated using the measurements from the pH electrode. The enzyme electrode may comprise glucose dehydrogenase, lactate dehydrogenase, or carbonic anhydrase. The method is suitable for use both in stand-alone sensor devices, where the solution is deposited or conveyed by fluidic transport means to the sensing layers, and in implantable and skin patch-like sensor devices, where the device is applied for measuring the pH and the concentration of given substances in situ. The measurements may be poteniometric.

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