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1. 发明申请

US20110042005A1 Processing Systems and Methods for Semiconductor Devices 有权
标题翻译：半导体器件的处理系统和方法
公开(公告)号：US20110042005A1
公开(公告)日：2011-02-24
申请号：US12917651
申请日：2010-11-02
申请人： Lothar Doni
发明人： Lothar Doni
IPC分类号： H01L21/465
CPC分类号： H01L21/67086 , H01L21/31111
摘要： Systems and methods for processing semiconductor devices are disclosed. A preferred embodiment comprises a processing system that includes providing a processing system including a first container and a second container fluidly coupled to the first container, the second container being adapted to receive and retain an overflow amount of a fluid from the first container, and disposing the fluid in the first container and a portion of the second container. The method includes providing at least one semiconductor device, disposing the at least one semiconductor device in the first container, and maintaining the fluid in the second container substantially to a first level while processing the at least one semiconductor device with the fluid.
摘要翻译：公开了用于处理半导体器件的系统和方法。优选实施例包括处理系统，其包括提供处理系统，该处理系统包括流体地联接到第一容器的第一容器和第二容器，第二容器适于接收并保持来自第一容器的溢流量的流体，第一容器中的流体和第二容器的一部分。所述方法包括提供至少一个半导体器件，将所述至少一个半导体器件设置在所述第一容器中，并且将所述第二容器中的流体基本维持在第一电平，同时用所述流体处理所述至少一个半导体器件。

2. 发明申请

US20070105293A1 Methods of fabricating integrated circuit devices using anti-reflective coating as implant blocking layer 有权
标题翻译：使用抗反射涂层制造集成电路器件作为注入阻挡层的方法
公开(公告)号：US20070105293A1
公开(公告)日：2007-05-10
申请号：US11267980
申请日：2005-11-07
申请人： Sang Park , Chong Chang , Seok-Gyu Lee , Lothar Doni
发明人： Sang Park , Chong Chang , Seok-Gyu Lee , Lothar Doni
IPC分类号： H01L21/8234
CPC分类号： H01L21/823842 , H01L21/26586 , H01L21/823814 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： A patterned anti-reflective coating may be used as a selective implant-blocking layer during fabrication of an integrated circuit transistor. In particular, the anti-reflective coating may be used as a gate sidewall spacer to block at least some dopants from an integrated circuit substrate beneath the gate sidewall spacer. Moreover, a single mask may be used when fabricating source and drain extension regions and source and drain regions of an integrated circuit transistor.
摘要翻译：图案化抗反射涂层可以在集成电路晶体管的制造期间用作选择性注入阻挡层。具体地，抗反射涂层可以用作栅极侧壁间隔物，以从栅极侧壁间隔物下方的集成电路基板阻挡至少一些掺杂剂。此外，当制造集成电路晶体管的源极和漏极延伸区域以及源极和漏极区域时，可以使用单个掩模。

3. 发明授权

US07585763B2 Methods of fabricating integrated circuit devices using anti-reflective coating as implant blocking layer 有权
标题翻译：使用抗反射涂层制造集成电路器件作为注入阻挡层的方法
公开(公告)号：US07585763B2
公开(公告)日：2009-09-08
申请号：US11267980
申请日：2005-11-07
申请人： Sang Jine Park , Chong Kwang Chang , Seok-Gyu Lee , Lothar Doni
发明人： Sang Jine Park , Chong Kwang Chang , Seok-Gyu Lee , Lothar Doni
IPC分类号： H01L21/4763
CPC分类号： H01L21/823842 , H01L21/26586 , H01L21/823814 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： A patterned anti-reflective coating may be used as a selective implant-blocking layer during fabrication of an integrated circuit transistor. In particular, the anti-reflective coating may be used as a gate sidewall spacer to block at least some dopants from an integrated circuit substrate beneath the gate sidewall spacer. Moreover, a single mask may be used when fabricating source and drain extension regions and source and drain regions of an integrated circuit transistor.
摘要翻译：图案化抗反射涂层可以在集成电路晶体管的制造期间用作选择性注入阻挡层。具体地，抗反射涂层可以用作栅极侧壁间隔物，以从栅极侧壁间隔物下方的集成电路基板阻挡至少一些掺杂剂。此外，当制造集成电路晶体管的源极和漏极延伸区域以及源极和漏极区域时，可以使用单个掩模。

4. 发明授权

US07544553B2 Integration scheme for fully silicided gate 有权
标题翻译：完全硅化栅的集成方案
公开(公告)号：US07544553B2
公开(公告)日：2009-06-09
申请号：US11094367
申请日：2005-03-30
申请人： Marcus Culmsee , Hermann Wendt , Lothar Doni
发明人： Marcus Culmsee , Hermann Wendt , Lothar Doni
IPC分类号： H01L23/336 , H01L21/3205
CPC分类号： H01L29/665 , H01L21/28097 , H01L29/66545 , H01L29/6656
摘要： To form a semiconductor device, a silicon (e.g., polysilicon) gate layer is formed over a gate dielectric and a sacrificial layer (preferably titanium nitride) is formed over the silicon gate layer. The silicon gate layer and the sacrificial layer are patterned to form a gate structure. A spacer, such as an oxide sidewall spacer and a nitride sidewall spacer, is formed adjacent the sidewall of the gate structure. The semiconductor body is then doped to form a source region and a drain region that are self-aligned to the spacers. The sacrificial layer can then be removed selectively with respect to the oxide sidewall spacer, the nitride sidewall spacer and the silicon gate. A metal layer (e.g., nickel) is formed over the source region, the drain region and the silicon gate and reacted with these regions to form a silicided source contact, a silicided drain contact and a silicided gate.
摘要翻译：为了形成半导体器件，在栅极电介质上形成硅（例如，多晶硅）栅极层，并且在硅栅极层上形成牺牲层（优选氮化钛）。图案化硅栅极层和牺牲层以形成栅极结构。邻近栅极结构的侧壁形成间隔物，例如氧化物侧壁间隔物和氮化物侧壁间隔物。然后，半导体体被掺杂以形成与间隔物自对准的源极区域和漏极区域。然后可以相对于氧化物侧壁间隔物，氮化物侧壁间隔物和硅栅极选择性地去除牺牲层。在源极区域，漏极区域和硅栅极上形成金属层（例如镍），并与这些区域反应以形成硅化物源极接触，硅化物漏极接触和硅化物栅极。

5. 发明授权

US07851373B2 Processing systems and methods for semiconductor devices 有权
标题翻译：半导体器件的处理系统和方法
公开(公告)号：US07851373B2
公开(公告)日：2010-12-14
申请号：US11595446
申请日：2006-11-09
申请人： Lothar Doni
发明人： Lothar Doni
IPC分类号： H01L21/302
CPC分类号： H01L21/67086 , H01L21/31111
摘要： Systems and methods for processing semiconductor devices are disclosed. A preferred embodiment comprises a processing method that includes providing a processing system including a first container and a second container fluidly coupled to the first container, the second container being adapted to receive and retain an overflow amount of a fluid from the first container, and disposing the fluid in the first container and a portion of the second container. The method includes providing at least one semiconductor device, disposing the at least one semiconductor device in the first container, and maintaining the fluid in the second container substantially to a first level while processing the at least one semiconductor device with the fluid.
摘要翻译：公开了用于处理半导体器件的系统和方法。优选实施例包括一种处理方法，其包括提供处理系统，该处理系统包括流体地联接到第一容器的第一容器和第二容器，第二容器适于接收并保持来自第一容器的溢流量的流体，第一容器中的流体和第二容器的一部分。所述方法包括提供至少一个半导体器件，将所述至少一个半导体器件设置在所述第一容器中，并且将所述第二容器中的流体基本维持在第一水平，同时用所述流体处理所述至少一个半导体器件。

6. 发明申请

US20060228844A1 Integration scheme for fully silicided gate 有权
公开(公告)号：US20060228844A1
公开(公告)日：2006-10-12
申请号：US11094367
申请日：2005-03-30
申请人： Marcus Culmsee , Hermann Wendt , Lothar Doni
发明人： Marcus Culmsee , Hermann Wendt , Lothar Doni
IPC分类号： H01L21/8234 , H01L21/336
CPC分类号： H01L29/665 , H01L21/28097 , H01L29/66545 , H01L29/6656
摘要： To form a semiconductor device, a silicon (e.g., polysilicon) gate layer is formed over a gate dielectric and a sacrificial layer (preferably titanium nitride) is formed over the silicon gate layer. The silicon gate layer and the sacrificial layer are patterned to form a gate structure. A spacer, such as an oxide sidewall spacer and a nitride sidewall spacer, is formed adjacent the sidewall of the gate structure. The semiconductor body is then doped to form a source region and a drain region that are self-aligned to the spacers. The sacrificial layer can then be removed selectively with respect to the oxide sidewall spacer, the nitride sidewall spacer and the silicon gate. A metal layer (e.g., nickel) is formed over the source region, the drain region and the silicon gate and reacted with these regions to form a silicided source contact, a silicided drain contact and a silicided gate.

7. 发明授权

US08262845B2 Processing systems and methods for semiconductor devices 有权
标题翻译：半导体器件的处理系统和方法
公开(公告)号：US08262845B2
公开(公告)日：2012-09-11
申请号：US12917651
申请日：2010-11-02
申请人： Lothar Doni
发明人： Lothar Doni
IPC分类号： H01L21/465
CPC分类号： H01L21/67086 , H01L21/31111
摘要： Systems and methods for processing semiconductor devices are disclosed. A preferred embodiment comprises a processing system that includes providing a processing system including a first container and a second container fluidly coupled to the first container, the second container being adapted to receive and retain an overflow amount of a fluid from the first container, and disposing the fluid in the first container and a portion of the second container. The method includes providing at least one semiconductor device, disposing the at least one semiconductor device in the first container, and maintaining the fluid in the second container substantially to a first level while processing the at least one semiconductor device with the fluid.
摘要翻译：公开了用于处理半导体器件的系统和方法。优选实施例包括处理系统，其包括提供处理系统，该处理系统包括流体地联接到第一容器的第一容器和第二容器，第二容器适于接收并保持来自第一容器的溢流量的流体，第一容器中的流体和第二容器的一部分。所述方法包括提供至少一个半导体器件，将所述至少一个半导体器件设置在所述第一容器中，并且将所述第二容器中的流体基本维持在第一水平，同时用所述流体处理所述至少一个半导体器件。

8. 发明申请

US20080113454A1 Processing systems and methods for semiconductor devices 有权
标题翻译：半导体器件的处理系统和方法
公开(公告)号：US20080113454A1
公开(公告)日：2008-05-15
申请号：US11595446
申请日：2006-11-09
申请人： Lothar Doni
发明人： Lothar Doni
IPC分类号： H01L29/02 , H01L21/67 , H01L21/02
CPC分类号： H01L21/67086 , H01L21/31111
摘要： Systems and methods for processing semiconductor devices are disclosed. A preferred embodiment comprises a processing method that includes providing a processing system including a first container and a second container fluidly coupled to the first container, the second container being adapted to receive and retain an overflow amount of a fluid from the first container, and disposing the fluid in the first container and a portion of the second container. The method includes providing at least one semiconductor device, disposing the at least one semiconductor device in the first container, and maintaining the fluid in the second container substantially to a first level while processing the at least one semiconductor device with the fluid.
摘要翻译：公开了用于处理半导体器件的系统和方法。优选实施例包括一种处理方法，其包括提供处理系统，该处理系统包括流体地联接到第一容器的第一容器和第二容器，第二容器适于接收并保持来自第一容器的溢流量的流体，第一容器中的流体和第二容器的一部分。所述方法包括提供至少一个半导体器件，将所述至少一个半导体器件设置在所述第一容器中，并且将所述第二容器中的流体基本维持在第一电平，同时用所述流体处理所述至少一个半导体器件。

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