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1. 发明授权

US06852358B1 Process for preparing an optical waveguide component from acrylate/titanium alkoxide composite material and the prepared optical waveguide component 失效
标题翻译：从丙烯酸酯/烷氧基钛复合材料制备光波导部件的方法和制备的光波导部件
公开(公告)号：US06852358B1
公开(公告)日：2005-02-08
申请号：US10649676
申请日：2003-08-28
申请人： Wen Chang Chen , Long Hua Lee
发明人： Wen Chang Chen , Long Hua Lee
IPC分类号： G02B6/122 , B05D5/06 , G02B6/10
CPC分类号： G02B6/1221
摘要： The present invention relates to a process for preparing an optical waveguide component from acrylate/titanium alkoxide composite material, which is characterized by using an acid-free sol-gel process to prepare a precursor solution of acrylate/titanium alkoxide composite film, then coating the precursor solution on a silicon wafer then drying, and producing the optical waveguide component having channels by using a lithography process. The present invention also relates to an optical waveguide component of acrylate/titanium alkoxide composite material, the material has excellent transparency and its refractive index varies with the amount of titanium alkoxide contained therein. When an optical waveguide component is prepared from the composite the reduction of near-infrared ray is less than 0.7 dB/cm and therefore the waveguide component is advantageous for use as an optical communication element.
摘要翻译：本发明涉及一种由丙烯酸酯/钛醇盐复合材料制备光波导部件的方法，其特征在于使用无酸溶胶 - 凝胶法制备丙烯酸酯/钛醇盐复合膜的前体溶液，然后涂布然后干燥，并通过使用光刻工艺制造具有通道的光波导部件。本发明还涉及丙烯酸酯/钛醇盐复合材料的光波导部件，该材料具有优异的透明度，其折射率随其中所含的烷氧基钛的量而变化。当从复合材料制备光波导部件时，近红外线的减少小于0.7dB / cm，因此波导部件有利于用作光通信元件。

2. 发明授权

US08629043B2 Methods for de-bonding carriers 有权
标题翻译：去离子载体的方法
公开(公告)号：US08629043B2
公开(公告)日：2014-01-14
申请号：US13298014
申请日：2011-11-16
申请人： Chung Yu Wang , Jui-Pin Hung , Chih-Hao Chen , Chun-Hsing Su , Yi-Chao Mao , Kung-Chen Yeh , Yi-Lin Tsai , Ying-Tz Hung , Chin-Fu Kao , Shih-Yi Syu , Chin-Chuan Chang , Hsien-Wen Liu , Long Hua Lee
发明人： Chung Yu Wang , Jui-Pin Hung , Chih-Hao Chen , Chun-Hsing Su , Yi-Chao Mao , Kung-Chen Yeh , Yi-Lin Tsai , Ying-Tz Hung , Chin-Fu Kao , Shih-Yi Syu , Chin-Chuan Chang , Hsien-Wen Liu , Long Hua Lee
IPC分类号： H01L21/78
CPC分类号： H01L21/6835 , H01L21/6836 , H01L21/78 , H01L24/94 , H01L24/97 , H01L25/0652 , H01L25/0655 , H01L25/50 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68368 , H01L2221/68381 , H01L2224/11002 , H01L2224/13025 , H01L2224/1403 , H01L2224/14181 , H01L2224/16145 , H01L2224/16227 , H01L2224/32145 , H01L2224/32225 , H01L2224/73204 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06541 , H01L2924/15311 , H01L2924/18161 , H01L2224/81 , H01L2224/83 , H01L2224/11 , H01L2924/00
摘要： A method includes performing a dicing on a composite wafer including a plurality of dies, wherein the composite wafer is bonded on a carrier when the step of dicing is performed. After the step of dicing, the composite wafer is mounted onto a tape. The carrier is then de-bonded from the composite wafer and the first tape.
摘要翻译：一种方法包括在包括多个管芯的复合晶片上执行切割，其中当执行切割步骤时，复合晶片结合在载体上。在切割步骤之后，将复合晶片安装在带上。然后将载体从复合晶片和第一带去粘合。

3. 发明申请

US20130119533A1 Package for Three Dimensional Integrated Circuit 有权
标题翻译：三维集成电路封装
公开(公告)号：US20130119533A1
公开(公告)日：2013-05-16
申请号：US13297992
申请日：2011-11-16
申请人： Chih-Hao Chen , Long Hua Lee , Chun-Hsing Su , Yi-Lin Tsai , Kung-Chen Yeh , Chung Yu Wang , Jui-Pin Hung , Jing-Cheng Lin
发明人： Chih-Hao Chen , Long Hua Lee , Chun-Hsing Su , Yi-Lin Tsai , Kung-Chen Yeh , Chung Yu Wang , Jui-Pin Hung , Jing-Cheng Lin
IPC分类号： H01L23/48 , H01L21/78
CPC分类号： H01L21/563 , H01L21/561 , H01L21/78 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/81 , H01L24/94 , H01L24/97 , H01L25/0652 , H01L25/0657 , H01L25/50 , H01L29/0657 , H01L2224/131 , H01L2224/16225 , H01L2224/17181 , H01L2224/26145 , H01L2224/2919 , H01L2224/32145 , H01L2224/73204 , H01L2224/81193 , H01L2224/81815 , H01L2224/83104 , H01L2224/9202 , H01L2224/92125 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2924/12042 , H01L2924/15311 , H01L2924/181 , H01L2924/18161 , H01L2924/351 , H01L2224/81 , H01L2224/32225 , H01L2924/00 , H01L2924/00014 , H01L2224/11 , H01L2924/014 , H01L2924/0665
摘要： A wafer level package includes a semiconductor die bonded on a supporting wafer. The semiconductor die has at least a step recess at its substrate. An underfill layer is formed between the semiconductor die and the supporting wafer. Moreover, the height of the underfill layer is limited by the step recess. During a fabrication process of the wafer level package, the step recess helps to reduce the stress on the wafer level package.
摘要翻译：晶片级封装包括结合在支撑晶片上的半导体管芯。半导体管芯在其衬底上至少有一个台阶凹槽。在半导体管芯和支撑晶片之间形成底部填充层。此外，底部填充层的高度受到台阶凹槽的限制。在晶片级封装的制造过程中，台阶凹槽有助于减小晶片级封装上的应力。

4. 发明授权

US08772929B2 Package for three dimensional integrated circuit 有权
标题翻译：三维集成电路封装
公开(公告)号：US08772929B2
公开(公告)日：2014-07-08
申请号：US13297992
申请日：2011-11-16
申请人： Chih-Hao Chen , Long Hua Lee , Chun-Hsing Su , Yi-Lin Tsai , Kung-Chen Yeh , Chung Yu Wang , Jui-Pin Hung , Jing-Cheng Lin
发明人： Chih-Hao Chen , Long Hua Lee , Chun-Hsing Su , Yi-Lin Tsai , Kung-Chen Yeh , Chung Yu Wang , Jui-Pin Hung , Jing-Cheng Lin
IPC分类号： H01L23/48 , H01L21/78
CPC分类号： H01L21/563 , H01L21/561 , H01L21/78 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/81 , H01L24/94 , H01L24/97 , H01L25/0652 , H01L25/0657 , H01L25/50 , H01L29/0657 , H01L2224/131 , H01L2224/16225 , H01L2224/17181 , H01L2224/26145 , H01L2224/2919 , H01L2224/32145 , H01L2224/73204 , H01L2224/81193 , H01L2224/81815 , H01L2224/83104 , H01L2224/9202 , H01L2224/92125 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2924/12042 , H01L2924/15311 , H01L2924/181 , H01L2924/18161 , H01L2924/351 , H01L2224/81 , H01L2224/32225 , H01L2924/00 , H01L2924/00014 , H01L2224/11 , H01L2924/014 , H01L2924/0665
摘要： A wafer level package includes a semiconductor die bonded on a supporting wafer. The semiconductor die has at least a step recess at its substrate. An underfill layer is formed between the semiconductor die and the supporting wafer. Moreover, the height of the underfill layer is limited by the step recess. During a fabrication process of the wafer level package, the step recess helps to reduce the stress on the wafer level package.
摘要翻译：晶片级封装包括结合在支撑晶片上的半导体管芯。半导体管芯在其衬底上至少有一个台阶凹槽。在半导体管芯和支撑晶片之间形成底部填充层。此外，底部填充层的高度受到台阶凹槽的限制。在晶片级封装的制造过程中，台阶凹槽有助于减小晶片级封装上的应力。

5. 发明申请

US20090087562A1 METHOD OF PREPARING CROSS-LINKED ORGANIC GLASSES FOR AIR-GAP SACRIFICIAL LAYERS 审中-公开
标题翻译：制备空气隙生物层的交联有机玻璃的方法
公开(公告)号：US20090087562A1
公开(公告)日：2009-04-02
申请号：US12234896
申请日：2008-09-22
申请人： Long Hua Lee , Karen K. Gleason
发明人： Long Hua Lee , Karen K. Gleason
IPC分类号： C23C16/44
CPC分类号： H01L21/02118 , B05D1/34 , B05D1/60 , H01L21/02271 , H01L21/312 , H01L21/7682
摘要： A method of forming a polymer film on a surface of a substrate is described. The method comprises placing a substrate on a substrate holder in a vapor deposition system, and introducing a process gas to the vapor deposition system, wherein the process gas comprises a monomer, a cross-linking monomer, and an initiator. Thereafter, the substrate is exposed to the process gas in order to form a polymer film on the substrate, wherein the polymer film thermally decomposes at a decomposition temperature.
摘要翻译：描述了在基板的表面上形成聚合物膜的方法。该方法包括将衬底放置在气相沉积系统中的衬底保持器上，并将工艺气体引入气相沉积系统，其中工艺气体包括单体，交联单体和引发剂。此后，将衬底暴露于工艺气体，以在衬底上形成聚合物膜，其中聚合物膜在分解温度下热分解。

6. 发明申请

US20050048200A1 PROCESS FOR PREPARING AN OPTICAL WAVEGUIDE COMPONENT FROM ACRYLATE/TITANIUM ALKOXIDE COMPOSITE MATERIAL AND THE PREPARED OPTICAL WAVEGUIDE COMPONENT 失效
标题翻译：从丙烯酸酯/烷基氧化铝复合材料制备光学波长成分的方法和准备好的光波长成分
公开(公告)号：US20050048200A1
公开(公告)日：2005-03-03
申请号：US10649676
申请日：2003-08-28
申请人： Wen-Chang Chen , Long-Hua Lee
发明人： Wen-Chang Chen , Long-Hua Lee
IPC分类号： G02B6/122 , B05D5/06
CPC分类号： G02B6/1221
摘要： The present invention relates to a process for preparing an optical waveguide component from acrylate/titanium alkoxide composite material, which is characterized by using an acid-free sol-gel process to prepare a precursor solution of acrylate/titanium alkoxide composite film, then coating the precursor solution on a silicon wafer then drying, and producing the optical waveguide component having channels by using a lithography process. The present invention also relates to an optical waveguide component of acrylate/titanium alkoxide composite material, the material has excellent transparency and its refractive index varies with the amount of titanium alkoxide contained therein. When an optical waveguide component is prepared from the composite the reduction of near-infrared ray is less than 0.7 dB/cm and therefore the waveguide component is advantageous for use as an optical communication element.
摘要翻译：本发明涉及一种由丙烯酸酯/钛醇盐复合材料制备光波导部件的方法，其特征在于使用无酸溶胶 - 凝胶法制备丙烯酸酯/钛醇盐复合膜的前体溶液，然后涂布然后干燥，并通过使用光刻工艺制造具有通道的光波导部件。本发明还涉及丙烯酸酯/钛醇盐复合材料的光波导部件，该材料具有优异的透明度，其折射率随其中所含的烷氧基钛的量而变化。当从复合材料制备光波导部件时，近红外线的减少小于0.7dB / cm，因此波导部件有利于用作光通信元件。

7. 发明授权

US08963334B2 Die-to-die gap control for semiconductor structure and method 有权
标题翻译：用于半导体结构和方法的芯片到芯片间隙控制
公开(公告)号：US08963334B2
公开(公告)日：2015-02-24
申请号：US13221447
申请日：2011-08-30
申请人： Jing-Cheng Lin , Szu Wei Lu , Ying-Ching Shih , Ying-Da Wang , Li-Chung Kuo , Long Hua Lee , Shin-Puu Jeng , Chen-Hua Yu
发明人： Jing-Cheng Lin , Szu Wei Lu , Ying-Ching Shih , Ying-Da Wang , Li-Chung Kuo , Long Hua Lee , Shin-Puu Jeng , Chen-Hua Yu
IPC分类号： H01L23/498 , H01L25/065 , H01L21/683 , H01L23/00 , H01L25/00 , H01L21/768 , H01L21/56 , H01L23/58
CPC分类号： H01L24/81 , H01L21/563 , H01L21/6835 , H01L21/6836 , H01L21/76898 , H01L23/49822 , H01L23/49827 , H01L23/5384 , H01L23/585 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/73 , H01L24/97 , H01L25/0652 , H01L25/0655 , H01L25/50 , H01L2221/68327 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/0401 , H01L2224/05569 , H01L2224/0557 , H01L2224/05572 , H01L2224/05611 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05684 , H01L2224/06181 , H01L2224/11462 , H01L2224/131 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/81192 , H01L2224/81193 , H01L2224/81815 , H01L2224/92125 , H01L2224/97 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06548 , H01L2924/00014 , H01L2924/01029 , H01L2924/01322 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/157 , H01L2924/181 , H01L2924/18161 , H01L2924/3511 , H01L2924/3512 , H01L2224/81 , H01L2924/014 , H01L2924/00 , H01L2224/05552
摘要： An embodiment is a structure comprising a substrate, a first die, and a second die. The substrate has a first surface and a second surface opposite the first surface. The substrate has a through substrate via extending from the first surface towards the second surface. The first die is attached to the substrate, and the first die is coupled to the first surface of the substrate. The second die is attached to the substrate, and the second die is coupled to the first surface of the substrate. A first distance is between a first edge of the first die and a first edge of the second die, and the first distance is in a direction parallel to the first surface of the substrate. The first distance is equal to or less than 200 micrometers.
摘要翻译：实施例是包括基板，第一模具和第二模具的结构。衬底具有与第一表面相对的第一表面和第二表面。衬底具有从第一表面延伸到第二表面的通孔衬底。第一裸片附着在基片上，第一裸片耦合到基片的第一表面。第二管芯附接到衬底，并且第二管芯耦合到衬底的第一表面。第一距离在第一管芯的第一边缘和第二管芯的第一边缘之间，并且第一距离在与基板的第一表面平行的方向上。第一距离等于或小于200微米。

8. 发明申请

US20130049216A1 Die-to-Die Gap Control for Semiconductor Structure and Method 有权
公开(公告)号：US20130049216A1
公开(公告)日：2013-02-28
申请号：US13221447
申请日：2011-08-30
申请人： Jing-Cheng Lin , Szu Wei Lu , Ying-Ching Shih , Ying-Da Wang , Li-Chung Kuo , Long Hua Lee , Shin-Puu Jeng , Chen-Hua Yu
发明人： Jing-Cheng Lin , Szu Wei Lu , Ying-Ching Shih , Ying-Da Wang , Li-Chung Kuo , Long Hua Lee , Shin-Puu Jeng , Chen-Hua Yu
IPC分类号： H01L23/498 , H01L21/50
CPC分类号： H01L24/81 , H01L21/563 , H01L21/6835 , H01L21/6836 , H01L21/76898 , H01L23/49822 , H01L23/49827 , H01L23/5384 , H01L23/585 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/73 , H01L24/97 , H01L25/0652 , H01L25/0655 , H01L25/50 , H01L2221/68327 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/0401 , H01L2224/05569 , H01L2224/0557 , H01L2224/05572 , H01L2224/05611 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05684 , H01L2224/06181 , H01L2224/11462 , H01L2224/131 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/81192 , H01L2224/81193 , H01L2224/81815 , H01L2224/92125 , H01L2224/97 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06548 , H01L2924/00014 , H01L2924/01029 , H01L2924/01322 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/157 , H01L2924/181 , H01L2924/18161 , H01L2924/3511 , H01L2924/3512 , H01L2224/81 , H01L2924/014 , H01L2924/00 , H01L2224/05552
摘要： An embodiment is a structure comprising a substrate, a first die, and a second die. The substrate has a first surface and a second surface opposite the first surface. The substrate has a through substrate via extending from the first surface towards the second surface. The first die is attached to the substrate, and the first die is coupled to the first surface of the substrate. The second die is attached to the substrate, and the second die is coupled to the first surface of the substrate. A first distance is between a first edge of the first die and a first edge of the second die, and the first distance is in a direction parallel to the first surface of the substrate. The first distance is equal to or less than 200 micrometers.

9. 发明申请

US20130122689A1 Methods for De-Bonding Carriers 有权
标题翻译：去绑定载体的方法
公开(公告)号：US20130122689A1
公开(公告)日：2013-05-16
申请号：US13298014
申请日：2011-11-16
申请人： Chung Yu Wang , Jui-Pin Hung , Chih-Hao Chen , Chun-Hsing Su , Yi-Chao Mao , Kung-Chen Yeh , Yi-Lin Tsai , Ying-Tz Hung , Chin-Fu Kao , Shih-Yi Syu , Chin-Chuan Chang , Hsien-Wen Liu , Long Hua Lee
发明人： Chung Yu Wang , Jui-Pin Hung , Chih-Hao Chen , Chun-Hsing Su , Yi-Chao Mao , Kung-Chen Yeh , Yi-Lin Tsai , Ying-Tz Hung , Chin-Fu Kao , Shih-Yi Syu , Chin-Chuan Chang , Hsien-Wen Liu , Long Hua Lee
IPC分类号： H01L21/78
CPC分类号： H01L21/6835 , H01L21/6836 , H01L21/78 , H01L24/94 , H01L24/97 , H01L25/0652 , H01L25/0655 , H01L25/50 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68368 , H01L2221/68381 , H01L2224/11002 , H01L2224/13025 , H01L2224/1403 , H01L2224/14181 , H01L2224/16145 , H01L2224/16227 , H01L2224/32145 , H01L2224/32225 , H01L2224/73204 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06541 , H01L2924/15311 , H01L2924/18161 , H01L2224/81 , H01L2224/83 , H01L2224/11 , H01L2924/00
摘要： A method includes performing a dicing on a composite wafer including a plurality of dies, wherein the composite wafer is bonded on a carrier when the step of dicing is performed. After the step of dicing, the composite wafer is mounted onto a tape. The carrier is then de-bonded from the composite wafer and the first tape.
摘要翻译：一种方法包括在包括多个管芯的复合晶片上执行切割，其中当执行切割步骤时，复合晶片结合在载体上。在切割步骤之后，将复合晶片安装在带上。然后将载体从复合晶片和第一带去粘合。

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