专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07598179B2 Techniques for removal of photolithographic films 有权
标题翻译：去除光刻胶膜的技术
公开(公告)号：US07598179B2
公开(公告)日：2009-10-06
申请号：US11243883
申请日：2005-10-04
申请人： Runshun Wang , Chao Wang , Lien Huang Cheng
发明人： Runshun Wang , Chao Wang , Lien Huang Cheng
IPC分类号： H01L21/301 , H01L21/461
CPC分类号： H01L21/31138 , H01L21/31111
摘要： Techniques for removal of photolithographic films used in the manufacture of semiconductor devices are provided. A substrate support member of a first processing chamber includes at least three retractable pins capable of elevating a wafer from a surface of the substrate support member. In addition, the first processing chamber is configured to automatically maintain the substrate support member at a first temperature. The wafer is elevated from the surface of the substrate support member using the at least three retractable pins. Thermal heating of the substrate from the substrate support member is reduced. A photoresist layer of the substrate is etched away while the substrate is in an elevated position. An anti-reflective layer of the substrate can be etched to remove substantially all of the anti-reflective layer. In a specific embodiment, the anti-reflective layer includes a DUO™ Bottom Anti-Reflective Coating by Honeywell International Inc.
摘要翻译：提供了用于去除用于制造半导体器件的光刻胶片的技术。第一处理室的衬底支撑构件包括至少三个能够从衬底支撑构件的表面升高晶片的伸缩销。此外，第一处理室被配置为自动地将基板支撑构件保持在第一温度。使用至少三个可缩回的销，从衬底支撑构件的表面升高晶片。衬底从衬底支撑构件的热加热减少了。当衬底处于升高位置时，蚀刻掉衬底的光致抗蚀剂层。可以蚀刻衬底的抗反射层以基本上去除所有抗反射层。在具体实施方案中，抗反射层包括Honeywell International Inc.的DUO TM底部防反射涂层

IPRDB

热门服务

关于我们

友情链接

联系方式