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    • 2. 发明授权
    • FET gate biasing control device for power amplifier
    • 用于功率放大器的FET栅极偏置控制装置
    • US6166591A
    • 2000-12-26
    • US209284
    • 1998-12-11
    • Levi SchultzYaron Moas
    • Levi SchultzYaron Moas
    • G05F1/10
    • G05F1/561
    • A novel closed loop FET biasing circuit featuring a standard logic control format for operational mode switching between operating states of an FET power amplifier. In a preferred embodiment, an FET gate bias control device is provided for configuring a gate bias circuit in an FET power amplifier to accommodate a broad range of output power levels, wherein the configuration is responsive to a command which establishes an FET bias condition. The gate bias control device of the present invention comprises a circuit having a controllable switching unit which connects a plurality of resistors in the source-drain voltage circuit portion individually or in parallel to provide a multiple of resistance values each corresponding to one of four amplifier operating modes. The controllable switching unit responds to a set of logic control signals, and therefore greatly simplifies the transition between operating modes, while maintaining FET bias conditions which insure operational stability without problems associated with temperature and loading fluctuations.
    • 一种新颖的闭环FET偏置电路,具有标准逻辑控制格式,用于FET功率放大器的工作状态之间的工作模式切换。 在优选实施例中,提供FET栅极偏置控制装置,用于配置FET功率放大器中的栅极偏置电路以适应宽范围的输出功率电平,其中该配置响应于建立FET偏置条件的命令。 本发明的栅极偏置控制装置包括具有可控开关单元的电路,其将源极 - 漏极电压电路部分中的多个电阻单独或并联连接以提供多个电阻值,每个电阻值对应于四个放大器操作中的一个 模式。 可控开关单元响应一组逻辑控制信号,因此极大地简化了工作模式之间的转换,同时保持了FET偏置条件,确保了运行稳定性,而没有与温度和负载波动相关的问题。