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    • 3. 发明申请
    • TEMPLATES USED FOR NANOIMPRINT LITHOGRAPHY AND METHODS FOR FABRICATING THE SAME
    • 用于纳米压印的模板及其制作方法
    • US20110104322A1
    • 2011-05-05
    • US12763380
    • 2010-04-20
    • Kunsik PARKDong-Pyo KimJi Man ParkKyu-Ha BaekLee-Mi Do
    • Kunsik PARKDong-Pyo KimJi Man ParkKyu-Ha BaekLee-Mi Do
    • B28B11/08B05D3/10
    • G03F7/0002B82Y10/00B82Y40/00
    • Provided are a template used for nanoimprint lithography and a method for fabricating the same. A raised first deposition layer pattern including at least one downwardly sloped side surface is formed on a substrate. A second deposition layer pattern covering the side surface of the raised first deposition layer pattern and progressively decreasing in width downward along the side surface of the raised first deposition layer pattern is formed. A third deposition layer is formed on the entire surface of a structure on which the second deposition layer pattern. A second deposition layer nano pattern between the raised first deposition layer pattern and a planarized third deposition layer is formed by planarizing the third deposition layer to expose upper surfaces of the raised first deposition layer pattern and the second deposition layer pattern. An intaglio nano pattern defined by side surfaces sloped downward from upper surfaces of the raised first deposition layer pattern and the planarized third deposition layer to the surface of the substrate is formed by removing the second deposition layer nano pattern.
    • 提供了用于纳米压印光刻的模板及其制造方法。 在衬底上形成包括至少一个向下倾斜的侧表面的升高的第一沉积层图案。 形成覆盖凸起的第一沉积层图案的侧表面并且沿着凸起的第一沉积层图案的侧表面沿着宽度逐渐减小的第二沉积层图案。 第三沉积层形成在其上具有第二沉积层图案的结构的整个表面上。 在凸起的第一沉积层图案和平坦化的第三沉积层之间的第二沉积层纳米图案通过平坦化第三沉积层以暴露升高的第一沉积层图案和第二沉积层图案的上表面而形成。 通过去除第二沉积层纳米图案,形成由从凸起的第一沉积层图案的上表面向下倾斜的侧表面和平坦化的第三沉积层到基板的表面限定的凹版纳米图案。