会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明专利
    • Thin multi-well active layer led with controlled o doping
    • AU2072801A
    • 2001-07-03
    • AU2072801
    • 2000-12-08
    • LUMILEDS LIGHTING LLC
    • GRILLOT PATRICK NCHEN EUGENE IHUANG JEN-WUSTOCKMAN STEPHEN A
    • C30B29/40H01L33/02H01L33/06H01L33/30H01L33/00
    • An LED and a method of fabricating the LED which utilize controlled oxygen (O) doping to form at least one layer of the LED having an O dopant concentration which is correlated to the dominant emission wavelength of the LED. The O dopant concentration is regulated to be higher when the LED has been configured to have a longer dominant emission wavelength. Since the dominant emission wavelength is dependent on the composition of the active layer(s) of the LED, the O dopant concentration in the layer is related to the composition of the active layer(s). The controlled O doping improves the reliability while minimizing any light output penalty due to the introduction of O dopants. In an exemplary embodiment, the LED is an AlGaInP LED that includes a substrate, an optional distributed Bragg reflector layer, an n-type confining layer, an optional n-type set-back layer, an active region, an optional p-type set-back layer, a p-type confining layer and an optional window layer. In a preferred embodiment, the active region includes a multiplicity of active layers, where each active layer is 125 Angstroms thick or less and the active layers are separated from each other by barrier layers whose composition is Al0.5In0.5P and whose thickness is 100 Angstroms or less. In a preferred embodiment, both the p-type confining layer and the p-type set-back layer are doped with a controlled amount of O, depending on the dominant emission wavelength of the LED. In addition to the O doping, the p-type confining layer of the LED is preferably doped with a high amount of p-type dopants, such as Mg, Zn, C or Be. During high temperature thermal processing, this high concentration of p-type dopants then partially diffuses into the active region, resulting in a heavily p-type doped active region.
    • 5. 发明专利
    • AT327654T
    • 2006-06-15
    • AT02751537
    • 2002-07-18
    • LUMILEDS LIGHTING LLC
    • BUCKS MARCEL J MNIJHOF ENGBERT B G
    • H05B37/02H02M3/155H05B43/00
    • The invention relates to a switching arrangement for operating at least one LED, which switching arrangement is provided with input terminals ( 1, 2 ) for connecting a supply source, -output terminals ( 3, 4 ) for connecting the LED to be operated, -a first series circuit (I) between one of the input terminals ( 1 ) and one of the output terminals ( 3 ), including at least a self-inductance (L), a capacitor (C) and a diode (D), -a second series circuit (II) between the input terminals, including at least the self-inductance (L) and a switching element (S) which is alternately switched to a conducting state and a non-conducting state at a high frequency, -a third series circuit (III) between the output terminals, including the diode and an inductive winding (SW). According to the invention, the inductive winding forms a first winding (SW 1 ) of a transformer (T) which has a second winding (SW 2 ) that forms part of the first series circuit and which also has a connection point with the first winding.