专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2007106422A3 SHIELDED GATE TRENCH(SGT) MOSFET CELLS IMPLEMENTED WITH A SCHOTTKY SOURCE CONTACT 审中-公开
标题翻译：屏蔽门（SGT）MOSFET电池实现与肖特基源联系
公开(公告)号：WO2007106422A3
公开(公告)日：2008-07-03
申请号：PCT/US2007006165
申请日：2007-03-10
申请人： ALPHA & OMEGA SEMICONDUCTOR , BHALLA ANUP , LUI SIK K
发明人： BHALLA ANUP , LUI SIK K
IPC分类号： H01L29/76
CPC分类号： H01L29/7806 , H01L29/0615 , H01L29/0623 , H01L29/0696 , H01L29/1095 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/42368 , H01L29/66727 , H01L29/66734 , H01L29/7811 , H01L29/7813
摘要： This invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate. At least one active cell further includes a trenched source contact opened between the trenches wherein the trenched source contact opened through a source region into a body region for electrically connecting the source region to a source metal disposed on top of an insulation layer wherein a trench bottom surface of the trenched source contact further covered with a conductive material to function as an integrated Schottky barrier diode in said active cell. A shielding structure is disposed at the bottom and insulated from the trenched gate to provide shielding effect for both the trenched gate and the Schottky diode.
摘要翻译：本发明公开了一种半导体功率器件，其包括由在半导体衬底中开口的沟槽围绕的多个功率晶体管单元。至少一个有源电池还包括在沟槽之间开放的沟槽的源极触点，其中沟槽的源极触点通过源极区域开放到主体区域中，用于将源区域电连接到设置在绝缘层的顶部上的源极金属，其中沟槽底部沟槽源极接触表面进一步用导电材料覆盖，以用作所述活性电池中的集成肖特基势垒二极管。屏蔽结构设置在底部并与沟槽栅绝缘，以为沟槽栅极和肖特基二极管提供屏蔽效应。

2. 发明申请

WO2006050449A9 LOW COST POWER MOSFET WITH CURRENT MONITORING 审中-公开
标题翻译：低成本功率MOSFET与电流监测
公开(公告)号：WO2006050449A9
公开(公告)日：2006-08-17
申请号：PCT/US2005039708
申请日：2005-11-02
申请人： ALPHA & OMEGA SEMICONDUCTOR , LUI SIK K , BHALLA ANUP
发明人： LUI SIK K , BHALLA ANUP
IPC分类号： H01L23/495
CPC分类号： H01L24/91 , H01L23/49575 , H01L24/48 , H01L25/16 , H01L29/7834 , H01L2224/16 , H01L2224/48091 , H01L2224/73257 , H01L2924/00014 , H01L2924/01033 , H01L2924/01077 , H01L2924/01082 , H01L2924/13091 , H01L2924/14 , H01L2924/19107 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor integrated circuit package having a common source current sensing circuit includes a main die having a n integrated circuit, the main die including a source bonding pad and a gate bonding pad disposed on an upper surface, a leadframe having a leadframe pad disposed under the main die, and, a monitoring die including a source bonding pad and a gate bonding pad disposed on an upper surface, the monitoring die being coupled to the main die in such manner that the main die source bonding pad is coupled to the monitoring die source bonding pad and the main die gate bonding pad is coupled to the monitoring die gate bonding pad and such that the main die and monitoring die upper surfaces are adjacent to one another.
摘要翻译：一种具有公共电源电流感测电路的半导体集成电路封装包括：具有集成电路的主裸片，主裸片包括设置在上表面上的源极焊盘和栅极焊盘;具有引线框焊盘的引线框架，管芯，以及监测管芯，所述监测管芯包括设置在上表面上的源极结合焊盘和栅极结合焊盘，所述监测管芯以这样的方式耦合到所述主管芯，使得所述主管芯源结合焊盘耦合到< 监控管芯接合焊盘和主管芯接合焊盘耦合到监控管芯接合焊盘，并且使得主管芯和监控管芯上表面彼此相邻。

3. 发明申请

WO2006050449A3 LOW COST POWER MOSFET WITH CURRENT MONITORING 审中-公开
公开(公告)号：WO2006050449A3
公开(公告)日：2006-05-11
申请号：PCT/US2005/039708
申请日：2005-11-02
申请人： ALPHA & OMEGA SEMICONDUCTOR LIMITED , LUI, Sik, K. , BHALLA, Anup
发明人： LUI, Sik, K. , BHALLA, Anup
IPC分类号： H01L23/495
摘要： A semiconductor integrated circuit package having a common source current sensing circuit includes a main die having a n integrated circuit, the main die including a source bonding pad and a gate bonding pad disposed on an upper surface, a leadframe having a leadframe pad disposed under the main die , and, a monitoring die including a source bonding pad and a gate bonding pad disposed on an upper surface, the monitoring die being coupled to the main die in such manner that the main die source bonding pad is coupled to the monitoring die source bonding pad and the main die gate bonding pad is coupled to the monitoring die gate bonding pad and such that the main die and monitoring die upper surfaces are adjacent to one another.

4. 发明申请

WO2008039548A3 TRENCH JUNCTION BARRIER CONTROLLED SCHOTTKY 审中-公开
标题翻译：沟槽连接障碍控制肖特基
公开(公告)号：WO2008039548A3
公开(公告)日：2008-06-19
申请号：PCT/US2007021107
申请日：2007-09-30
申请人： ALPHA & OMEGA SEMICONDUCTOR , LUI SIK K
发明人： LUI SIK K , BHALLA ANUP
IPC分类号： H01L21/338
CPC分类号： H01L29/66727 , H01L29/0623 , H01L29/1095 , H01L29/407 , H01L29/66143 , H01L29/66734 , H01L29/7811 , H01L29/782 , H01L29/8725
摘要： A Schottky diode includes at least a trenched opened in a semiconductor substrate doped with a dopant of a first conductivity type wherein the trench is filled with a Schottky junction barrier metal. The Schottky diode further includes one or more dopant region of a second conductivity type surrounding sidewalk of the trench distributed along the depth of the trench for shielding a reverse leakage current through the sidewalk of the trench. The Schottky diode further includes a bottom-doped region of the second conductivity type surrounding a bottom surface of the trench and a top-doped region of the second conductivity type surrounding a top portion of the sidewalk of the trench. In a preferred embodiment, the first conductivity type k a N-type conductivity type and the middle-depth dopant region comprising a P-dopant region.
摘要翻译：肖特基二极管至少包括在掺杂有第一导电类型的掺杂剂的半导体衬底中开口的沟槽，其中所述沟槽填充有肖特基结势垒金属。肖特基二极管还包括沿着沟槽的深度分布的沟槽周围的第二导电类型的一个或多个掺杂剂区域，用于屏蔽通过沟槽的边路的反向漏电流。肖特基二极管还包括围绕沟槽的底表面的第二导电类型的底部掺杂区域和围绕沟槽的人行道的顶部部分的第二导电类型的顶部掺杂区域。在优选实施例中，第一导电类型k为N型导电类型，中间深度掺杂区域包含P掺杂区域。

5. 发明申请

WO2008039548A2 TRENCH JUNCTION BARRIER CONTROLLED SCHOTTKY 审中-公开
标题翻译： TRENCH JUNCTION BARRIER控制的肖特
公开(公告)号：WO2008039548A2
公开(公告)日：2008-04-03
申请号：PCT/US2007/021107
申请日：2007-09-30
申请人： ALPHA & OMEGA SEMICONDUCTOR, LTD. , LUI, Sik, K.
发明人： LUI, Sik, K. , BHALLA, Anup
IPC分类号： H01L29/739 , H01L31/00
CPC分类号： H01L29/66727 , H01L29/0623 , H01L29/1095 , H01L29/407 , H01L29/66143 , H01L29/66734 , H01L29/7811 , H01L29/782 , H01L29/8725
摘要： A Schottky diode includes at least a trenched opened in a semiconductor substrate doped with a dopant of a first conductivity type wherein the trench is filled with a Schottky junction barrier metal. The Schottky diode further includes one or more dopant region of a second conductivity type surrounding sidewalk of the trench distributed along the depth of the trench for shielding a reverse leakage current through the sidewalk of the trench. The Schottky diode further includes a bottom-doped region of the second conductivity type surrounding a bottom surface of the trench and a top-doped region of the second conductivity type surrounding a top portion of the sidewalk of the trench. In a preferred embodiment, the first conductivity type k a N-type conductivity type and the middle-depth dopant region comprising a P-dopant region.
摘要翻译：肖特基二极管包括在掺杂有第一导电类型的掺杂剂的半导体衬底中开放的至少沟槽，其中沟槽填充有肖特基结阻挡金属。所述肖特基二极管进一步包括沿沟槽深度分布的围绕沟槽的第二导电类型的一个或多个掺杂区域，用于屏蔽通过沟槽的人行道的反向泄漏电流。肖特基二极管还包括围绕沟槽的底表面的第二导电类型的底部掺杂区域和围绕沟槽的人行道顶部的第二导电类型的顶部掺杂区域。在优选实施例中，第一导电类型k是N型导电类型，以及包含P掺杂区域的中间深度掺杂剂区域。

6. 发明申请

WO2007106422A2 SHIELDED GATE TRENCH(SGT) MOSFET CELLS IMPLEMENTED WITH A SCHOTTKY SOURCE CONTACT 审中-公开
标题翻译：屏蔽门（SGT）MOSFET电池实现与肖特基源联系
公开(公告)号：WO2007106422A2
公开(公告)日：2007-09-20
申请号：PCT/US2007/006165
申请日：2007-03-12
申请人： ALPHA & OMEGA SEMICONDUCTOR, LTD. , BHALLA, Anup , LUI, Sik, K.
发明人： BHALLA, Anup , LUI, Sik, K.
IPC分类号： H04J3/16
CPC分类号： H01L29/7813 , H01L29/0615 , H01L29/0623 , H01L29/0696 , H01L29/1095 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/42368 , H01L29/66727 , H01L29/66734 , H01L29/7806 , H01L29/7811
摘要： This invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate. At least one active cell further includes a trenched source contact opened between the trenches wherein the trenched source contact opened through a source region into a body region for electrically connecting the source region to a source metal disposed on top of an insulation layer wherein a trench bottom surface of the trenched source contact further covered with a conductive material to function as an integrated Schottky barrier diode in said active cell. A shielding structure is disposed at the bottom and insulated from the trenched gate to provide shielding effect for both the trenched gate and the Schottky diode.
摘要翻译：本发明公开了一种半导体功率器件，其包括由在半导体衬底中开口的沟槽围绕的多个功率晶体管单元。至少一个有源电池还包括在沟槽之间开放的沟槽的源极触点，其中沟槽的源极触点通过源极区域开放到主体区域中，用于将源区域电连接到设置在绝缘层的顶部上的源极金属，其中沟槽底部沟槽源极接触表面进一步用导电材料覆盖，以用作所述活性电池中的集成肖特基势垒二极管。屏蔽结构设置在底部并与沟槽栅绝缘，以为沟槽栅极和肖特基二极管提供屏蔽效应。

7. 发明申请

WO2006050449A2 LOW COST POWER MOSFET WITH CURRENT MONITORING 审中-公开
公开(公告)号：WO2006050449A2
公开(公告)日：2006-05-11
申请号：PCT/US2005039708
申请日：2005-11-02
申请人： ALPHA & OMEGA SEMICONDUCTOR , LUI SIK K , BHALLA ANUP
发明人： LUI SIK K , BHALLA ANUP
CPC分类号： H01L24/91 , H01L23/49575 , H01L24/48 , H01L25/16 , H01L29/7834 , H01L2224/16 , H01L2224/48091 , H01L2224/73257 , H01L2924/00014 , H01L2924/01033 , H01L2924/01077 , H01L2924/01082 , H01L2924/13091 , H01L2924/14 , H01L2924/19107 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor integrated circuit package having a common source current sensing circuit includes a main die having a n integrated circuit, the main die including a source bonding pad and a gate bonding pad disposed on an upper surface, a leadframe having a leadframe pad disposed under the main die, and, a monitoring die including a source bonding pad and a gate bonding pad disposed on an upper surface, the monitoring die being coupled to the main die in such manner that the main die source bonding pad is coupled to the monitoring die source bonding pad and the main die gate bonding pad is coupled to the monitoring die gate bonding pad and such that the main die and monitoring die upper surfaces are adjacent to one another.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式