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1. 发明申请

WO2022087878A1 NON-CURABLE THERMALLY CONDUCTIVE PITUITOUS SILICONE MATERIAL 审中-公开
公开(公告)号：WO2022087878A1
公开(公告)日：2022-05-05
申请号：PCT/CN2020/124316
申请日：2020-10-28
申请人： DOW SILICONES CORPORATION , BHAGWAGAR, Dorab , HALE, Cassie , WEI, Peng , GE, Qianqing , ZHENG, Yan , LI, Zhanjie
发明人： BHAGWAGAR, Dorab , HALE, Cassie , WEI, Peng , GE, Qianqing , ZHENG, Yan , LI, Zhanjie
IPC分类号： C08L83/00
摘要： A non-curable thermally conductive material contains: (a) a matrix material containing: (i) 90 to 98 wt % of a non-functional non-crosslinked organosiloxane fluid having a dynamic viscosity of 50 to 350 centiStokes; and (ii) 2 to less than 10 wt % of a crosslinked hydrosilylation reaction product of an alkenyl terminated polydiorganosiloxane having a degree of polymerization greater than 300 and an organohydrogensiloxane crosslinker with 2 or more SiH groups per molecule where the molar ratio of SiH groups to alkenyl groups is 0.5 to 2.0; (b) greater than 80 wt % to less than 95 wt % thermally conductive filler dispersed throughout the matrix material; and (c) treating agents selected from alkyltrialkoxy silanes where the alkyl contains one to 14 carbon atoms and monotrialkoxy terminated diorganopolysiloxanes having a degree of polymerization of 20 to 110 and the alkoxy groups each contain one to 12 carbon atoms dispersed in the matrix material.

2. 发明申请

WO2008156967A1 METHOD AND SYSTEM FOR PROVIDING A SPIN TRANSFER DEVICE WITH IMPROVED SWITCHING CHARACTERISTICS 审中-公开
标题翻译：用于提供具有改进的切换特性的转子装置的方法和系统
公开(公告)号：WO2008156967A1
公开(公告)日：2008-12-24
申请号：PCT/US2008/064794
申请日：2008-05-23
申请人： GRANDIS, INC. , APALKOV, Dmytro , LI, Zhanjie
发明人： APALKOV, Dmytro , LI, Zhanjie
IPC分类号： G11C11/15
CPC分类号： G11C11/1675 , G11C11/161
摘要： A method and system for providing a magnetic element is described. The magnetic element includes a first pinned layer, a first spacer layer, a free layer, a second spacer layer, and a second pinned layer. The first and second pinned layers have first and magnetizations oriented in first and second directions, respectively. The first and second spacer layers are nonferromagnetic. The first and second spacer layers are between the free layer and the first and second pinned layers, respectively. The magnetic element is configured either to allow the free layer to be switched to each of multiple states when both a unidirectional write current is passed through the magnetic element and the magnetic element is subjected to a magnetic field corresponding to the each states or to allow the free layer to be switched to each of the plurality of states utilizing a write current and an additional magnetic field that is applied from at least one of the first pinned layer and the second pinned layer substantially only if the write current is also applied.
摘要翻译：描述了一种用于提供磁性元件的方法和系统。磁性元件包括第一固定层，第一间隔层，自由层，第二间隔层和第二固定层。第一和第二固定层分别具有在第一和第二方向上取向的第一和第二磁化。第一和第二间隔层是非铁磁性的。第一和第二间隔层分别位于自由层和第一和第二钉扎层之间。磁元件被配置为允许当单向写入电流通过磁性元件并且磁性元件经受对应于每个状态的磁场时，自由层被切换到多个状态中的每一个状态，或者允许利用写入电流和从第一被钉扎层和第二固定层中的至少一个施加的附加磁场，基本上仅在写入电流也被施加时，自由层被切换到多个状态中的每一个状态。

3. 发明申请

WO2022087880A1 TRIALKOXY FUNCTIONAL BRANCHED SILOXANE COMPOSITIONS 审中-公开
公开(公告)号：WO2022087880A1
公开(公告)日：2022-05-05
申请号：PCT/CN2020/124320
申请日：2020-10-28
申请人： DOW SILICONES CORPORATION , BHAGWAGAR, Dorab , WEI, Peng , GE, Qianqing , ZHENG, Yan , LI, Zhanjie
发明人： BHAGWAGAR, Dorab , WEI, Peng , GE, Qianqing , ZHENG, Yan , LI, Zhanjie
IPC分类号： C08G77/04 , C07F7/08 , C08L83/04
摘要： A composition contains an organopolysiloxane having the average chemical structure (I) : [R' R 2SiO- (R 2SiO) m] 3-Si- [OSiR 2] n-Y-Si (OR) 3 (I) where: R is independently in each occurrence selected from alkyl, aryl, substituted alkyl and substituted alkyl groups having from one to 8 carbon atoms; R' is independently in each occurrence selected from R and terminally unsaturated alkylene groups having from 2 to 6 carbon atoms; Y is selected from a group consisting of: X, and X- (R2SiO) pSiR2-X; where p has an average value in a range of one to 3; and X is independently in each occurrence selected from alkylene and substituted alkylene groups having from one to 6 carbon atoms; and the average values for subscripts m and n are each greater than zero and independently selected so that the average value for the sum of all of the average m values and the average n value is in a range of 30-200.

4. 发明申请

WO2009003060A1 MAGNETIC SHIELDING IN MAGNETIC MULTILAYER STRUCTURES 审中-公开
标题翻译：磁性多层结构中的磁屏蔽
公开(公告)号：WO2009003060A1
公开(公告)日：2008-12-31
申请号：PCT/US2008/068230
申请日：2008-06-25
申请人： GRANDIS INC. , DING, Yunfei , LI, Zhanjie
发明人： DING, Yunfei , LI, Zhanjie
IPC分类号： G11B5/39 , G11B5/33 , H01L21/00 , H01F10/16 , G11C11/15
CPC分类号： G11B33/1493 , B82Y25/00 , G11B5/112 , G11C11/161 , G11C11/1675 , H01F10/3263 , H01F41/34 , Y10S977/935
摘要： Techniques and device designs associated with devices having magnetically shielded magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves that are configured to operate based on spin-transfer torque switching.
摘要翻译：与具有磁屏蔽磁阻或磁阻隧道结（MTJ）的设备相关联的技术和设备设计以及配置为基于自旋转移转矩切换操作的自旋阀。

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