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1. 发明申请

WO2007030593A1 NEGATIVE PHOTORESIST FOR SILICON KOH ETCH WITHOUT SILICON NITRIDE 审中-公开
标题翻译：无硅氮化物的硅酮蚀刻剂负极光电剂
公开(公告)号：WO2007030593A1
公开(公告)日：2007-03-15
申请号：PCT/US2006/034817
申请日：2006-09-07
申请人： BREWER SCIENCE INC. , ZHONG, Xing-fu , LI, Chenghong , MALHOTRA, Jyoti, K.
发明人： ZHONG, Xing-fu , LI, Chenghong , MALHOTRA, Jyoti, K.
IPC分类号： G03F7/004 , G03F7/027
CPC分类号： G03F7/0382 , G03F7/0752 , H01L21/3081 , Y10S430/108 , Y10S430/115
摘要： New photoresists for use during the production of semiconductor and MEMS devices are provided. The primer layer preferably comprises a silane dissolved or dispersed in a solvent system. The photoresist layer includes copolymers prepared from styrene, acrylonitrile, and epoxy-containing monomers. The photoresist layer comprises a photoacid generator, and is preferably negative-acting.
摘要翻译：提供了在制造半导体和MEMS器件期间使用的新型光致抗蚀剂。底漆层优选包含溶解或分散在溶剂体系中的硅烷。光致抗蚀剂层包括由苯乙烯，丙烯腈和含环氧基的单体制备的共聚物。光致抗蚀剂层包括光致酸发生剂，并且优选为负性作用。

2. 发明申请

WO2005072489A2 SPIN-ON PROTECTIVE COATINGS FOR WET-ETCH PROCESSING OF MICROELECTRONIC SUBSTRATES 审中-公开
标题翻译：用于微电子基板湿蚀刻加工的旋转保护涂层
公开(公告)号：WO2005072489A2
公开(公告)日：2005-08-11
申请号：PCT/US2005/000786
申请日：2005-01-07
申请人： BREWER SCIENCE INC. , LI, Chenghong , RUBEN, Kimberly, A. , FLAIM, Tony, D.
发明人： LI, Chenghong , RUBEN, Kimberly, A. , FLAIM, Tony, D.
IPC分类号： B32B9/04 , C09D125/12 , H01L21/308 , H01L21/311
CPC分类号： B81C1/00539 , C03C15/00 , C03C2218/355 , C09D125/12 , H01L21/3081 , H01L21/31144 , Y10T428/265 , Y10T428/3154 , Y10T428/31544 , Y10T428/31612 , Y10T428/31663 , Y10T428/31678 , Y10T428/31935
摘要： New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and optionally other addition-polymerizable monomers such as (meth)acrylate monomers, vinylbenzyl chloride, and diesters of maleic acid or fumaric acid. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating.
摘要翻译：提供了在制造半导体和MEMS器件期间用于湿蚀刻工艺的新的保护涂层。这些层包括底漆层，第一保护层和任选的第二保护层。底漆层优选在溶剂体系中包含有机硅烷化合物。第一保护层包括由苯乙烯，丙烯腈和任选的其它加成聚合单体如（甲基）丙烯酸酯单体，乙烯基苄基氯和马来酸或富马酸的二酯制备的热塑性共聚物。第二保护层包括高度卤化的聚合物，例如氯化聚合物，其在加热时可以或不会交联。

3. 发明申请

WO2009088653A1 METAL-CLAD LAMINATES HAVING IMPROVED PEEL STRENGTH AND COMPOSITIONS USEFUL FOR THE PREPARATION THEREOF 审中-公开
标题翻译：具有改进的PEEL强度的金属层压板及其制备有用的组合物
公开(公告)号：WO2009088653A1
公开(公告)日：2009-07-16
申请号：PCT/US2008/086806
申请日：2008-12-15
申请人： ARLON , NAJJAR, Sam , LI, Chenghong , KOES, Thomas Allan , CHANG, Daniel
发明人： NAJJAR, Sam , LI, Chenghong , KOES, Thomas Allan , CHANG, Daniel
IPC分类号： C08F283/10 , B32B27/38
CPC分类号： B32B15/14 , B32B5/022 , B32B5/024 , B32B7/06 , B32B15/085 , B32B15/16 , B32B15/20 , B32B27/20 , B32B27/322 , B32B2260/021 , B32B2260/025 , B32B2260/046 , B32B2262/0261 , B32B2262/0269 , B32B2262/0276 , B32B2262/101 , B32B2262/14 , B32B2264/0257 , B32B2307/202 , B32B2307/204 , B32B2307/302 , B32B2307/3065 , B32B2307/308 , B32B2307/4026 , B32B2307/54 , B32B2307/71 , B32B2307/748 , B32B2457/08 , C08G73/12 , C08K5/0025 , C08L79/04 , C08L79/085 , H05K1/0353 , Y10T428/24994 , Y10T428/31786 , Y10T428/31855
摘要： In accordance with the present invention, compositions are described which are useful, for example, for the preparation of metal-clad laminate structures, methods for the preparation thereof, and various uses therefor. Invention metal-clad laminate structures are useful, for example, multi-layer board (MLB) industry, in the preparation of burn-in test boards and high reliability boards, applications where low coefficient of thermal expansion (CTE) is beneficial, in the preparation of boards used in down-hole drilling, and the like.
摘要翻译：根据本发明，描述了可用于例如制备覆金属层压板结构，其制备方法及其各种用途的组合物。本发明的金属包覆层压结构在例如多层板（MLB）工业中可用于制备老化测试板和高可靠性板，其中低热膨胀系数（CTE）有利的应用在在井下钻孔中使用的板的制备等。

4. 发明申请

WO2008045669A1 HIGH-TEMPERATURE, SPIN-ON, BONDING COMPOSITIONS FOR TEMPORARY WAFER BONDING USING SLIDING APPROACH 审中-公开
标题翻译：高温，旋转，使用滑动方法进行临时波形粘结的粘结组合物
公开(公告)号：WO2008045669A1
公开(公告)日：2008-04-17
申请号：PCT/US2007/079204
申请日：2007-09-21
申请人： BREWER SCIENCE INC. , PILLALAMARRI, Sunil, K. , LI, Chenghong
发明人： PILLALAMARRI, Sunil, K. , LI, Chenghong
IPC分类号： H01L21/304
CPC分类号： H01L21/6835 , B29B17/02 , B32B38/10 , B32B43/006 , C09J2205/302 , H01L2221/68327 , H01L2221/6834 , H01L2924/30105 , Y10T156/11 , Y10T156/1153 , Y10T156/1168 , Y10T156/1189 , Y10T156/19 , Y10T156/1972 , Y10T428/31678
摘要： New compositions and methods of using those compositions as bonding compositions are provided. The compositions comprise a polymer dispersed or dissolved in a solvent system, and can be used to bond an active wafer to a earner wafer or substrate to assist in protecting the active wafer and its active sites during subsequent processing and handling. The compositions form bonding layers that are chemically and thermally resistant, but that can also be softened to allow the wafers to slide apart at the appropriate stage in the fabrication process.
摘要翻译：提供了使用这些组合物作为粘合组合物的新组合物和方法。组合物包含分散或溶解在溶剂系统中的聚合物，并且可用于将活性晶片结合到载体晶片或基底，以在随后的处理和处理期间有助于保护活性晶片及其活性位点。组合物形成化学和耐热的粘合层，但是也可以软化以使晶片在制造过程中的适当阶段分开。

5. 发明申请

WO2005072489A3 SPIN-ON PROTECTIVE COATINGS FOR WET-ETCH PROCESSING OF MICROELECTRONIC SUBSTRATES 审中-公开
标题翻译：用于微电子基板湿蚀刻加工的旋转保护涂层
公开(公告)号：WO2005072489A3
公开(公告)日：2006-07-20
申请号：PCT/US2005000786
申请日：2005-01-07
申请人： BREWER SCIENCE INC , LI CHENGHONG , RUBEN KIMBERLY A , FLAIM TONY D
发明人： LI CHENGHONG , RUBEN KIMBERLY A , FLAIM TONY D
IPC分类号： B05D1/36 , B05D1/38 , B32B9/04 , B32B15/04 , B32B15/08 , B32B17/10 , C09D125/12 , H01L21/308 , H01L21/311
CPC分类号： B81C1/00539 , C03C15/00 , C03C2218/355 , C09D125/12 , H01L21/3081 , H01L21/31144 , Y10T428/265 , Y10T428/3154 , Y10T428/31544 , Y10T428/31612 , Y10T428/31663 , Y10T428/31678 , Y10T428/31935
摘要： New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and optionally other addition-polymerizable monomers such as (meth)acrylate monomers, vinylbenzyl chloride, and diesters of maleic acid or fumaric acid. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating.
摘要翻译：提供了在制造半导体和MEMS器件期间用于湿蚀刻工艺的新的保护涂层。这些层包括底漆层，第一保护层和任选的第二保护层。底漆层优选在溶剂体系中包含有机硅烷化合物。第一保护层包括由苯乙烯，丙烯腈和任选的其它加成聚合单体如（甲基）丙烯酸酯单体，乙烯基苄基氯和马来酸或富马酸的二酯制备的热塑性共聚物。第二保护层包括高度卤化的聚合物，例如氯化聚合物，其在加热时可以或不会交联。

6. 发明申请

WO2005001901A3 WET DEVELOPABLE HARD MASK IN CONJUNCTION WITH THIN PHOTORESIST FOR MICRO PHOTOLITHOGRAPHY 审中-公开
标题翻译：与薄膜光刻胶相结合的可湿性硬面膜
公开(公告)号：WO2005001901A3
公开(公告)日：2005-12-01
申请号：PCT/US2004018851
申请日：2004-06-10
申请人： BREWER SCIENCE INC , SUN SAM X , LI CHENGHONG
发明人： SUN SAM X , LI CHENGHONG
IPC分类号： G03C1/492 , G03C1/494 , G03C1/76 , G03C5/00 , G03F7/00 , G03F7/09 , G03F7/095 , G03F7/11 , G03F7/30 , H01L20060101 , H01L21/308 , H01L21/31 , H01L21/3213
CPC分类号： G03F7/091 , G03F7/094 , G03F7/095 , G03F7/11 , H01L21/3081 , H01L21/32139
摘要： A novel process for using a hard mask or protective layer in conjunction with an extremely thin photoresist is provided. In this process, a thin film of the protective layer is coated on the surface of a substrate that is to be selectively modified by reactive ion etch (RIE). The protective layer is photosensitive and anti-reflective. An extremely thin photoresist layer is coated on top of the protective layer. The stack of the films is selectively exposed to actinic radiation at a wavelength determined by the sensitivities of the protective layer and photoresist layer. The latent images on the photoresist and protective layers resulting from the exposure are developed with a common alkaline developer. The three dimensional patterns of photoresist and underlying protective layer are formed simultaneously by the single exposure and single development. When the underlying substrate is etched by RIE, the protective layer is the masking layer, not the photoresist.
摘要翻译：提供了与非常薄的光致抗蚀剂结合使用硬掩模或保护层的新颖方法。在该过程中，保护层的薄膜被涂覆在待通过反应离子蚀刻（RIE）选择性修饰的基底的表面上。保护层是光敏的和抗反射的。在保护层的顶部涂覆极薄的光致抗蚀剂层。以由保护层和光致抗蚀剂层的敏感度确定的波长选择性地暴露于光化辐射。用普通的碱性显影剂显影在光致抗蚀剂和由曝光产生的保护层上的潜像。光刻胶和下层保护层的三维图案通过单次曝光和单次显影同时形成。当通过RIE蚀刻底层衬底时，保护层是掩模层，而不是光致抗蚀剂。

7. 发明申请

WO2005001901A2 WET DEVELOPABLE HARD MASK IN CONJUNCTION WITH THIN PHOTORESIST FOR MICRO PHOTOLITHOGRAPHY 审中-公开
标题翻译：用于微光刻的与湿式光刻机连用的湿式可显影硬掩模
公开(公告)号：WO2005001901A2
公开(公告)日：2005-01-06
申请号：PCT/US2004/018851
申请日：2004-06-10
申请人： BREWER SCIENCE, INC. , SUN, Sam, X , LI, Chenghong
发明人： SUN, Sam, X , LI, Chenghong
IPC分类号： H01L
CPC分类号： G03F7/091 , G03F7/094 , G03F7/095 , G03F7/11 , H01L21/3081 , H01L21/32139
摘要： A novel process for using a hard mask or protective layer in conjunction with an extremely thin photoresist is provided. In this process, a thin film of the protective layer is coated on the surface of a substrate that is to be selectively modified by reactive ion etch (RIE). The protective layer is photosensitive and anti-reflective. An extremely thin photoresist layer is coated on top of the protective layer. The stack of the films is selectively exposed to actinic radiation at a wavelength determined by the sensitivities of the protective layer and photoresist layer. The latent images on the photoresist and protective layers resulting from the exposure are developed with a common alkaline developer. The three dimensional patterns of photoresist and underlying protective layer are formed simultaneously by the single exposure and single development. When the underlying substrate is etched by RIE, the protective layer is the masking layer, not the photoresist.
摘要翻译：提供了一种使用硬掩模或保护层与极薄的光致抗蚀剂结合的新方法。在此过程中，保护层的薄膜被涂覆在待通过反应离子蚀刻（RIE）选择性修饰的基板的表面上。保护层具有光敏性和抗反射性。在保护层上涂覆极薄的光致抗蚀剂层。该叠层膜选择性地暴露于由保护层和光致抗蚀剂层的灵敏度决定的波长下的光化辐射。曝光产生的光致抗蚀剂和保护层上的潜像用普通的碱性显影剂显影。通过单次曝光和单次显影同时形成光致抗蚀剂和下面的保护层的三维图案。当通过RIE蚀刻下面的衬底时，保护层是掩模层，而不是光刻胶。

8. 发明申请

WO2003002057A3 AMINE COMPOUNDS AND CURABLE COMPOSITIONS DERIVED THEREFROM 审中-公开
公开(公告)号：WO2003002057A3
公开(公告)日：2003-01-09
申请号：PCT/US2002/018433
申请日：2002-06-11
申请人： VIRGINIA TECH INTELLECTUAL PROPERTIES, INC. , WILKES, Garth, L. , LI, Chenghong
发明人： WILKES, Garth, L. , LI, Chenghong
IPC分类号： C02F7/10
摘要： Disclosed are compounds produced by a process comprising the step of reacting an amine reactant with an epoxide reactant to form a hydrolytically stable carbon-nitrogen bond therebetween, wherein at least one of the amine or epoxide reactants comprises a terminal alkoxysiyl group. Also disclosed are curable compositions comprising the compounds of the present invention and the cured products derived therefrom.

9. 发明申请

WO2003002057A2 AMINE COMPOUNDS AND CURABLE COMPOSITIONS DERIVED THEREFROM 审中-公开
标题翻译：胺化合物和由此衍生的可固化组合物
公开(公告)号：WO2003002057A2
公开(公告)日：2003-01-09
申请号：PCT/US2002/018433
申请日：2002-06-11
申请人： VIRGINIA TECH INTELLECTUAL PROPERTIES, INC. , WILKES, Garth, L. , LI, Chenghong
发明人： WILKES, Garth, L. , LI, Chenghong
IPC分类号： A61K
CPC分类号： C08G59/504 , C08G59/306 , C08G59/3254 , C08G59/50 , C08G77/54 , C09D183/14 , Y10T428/31507 , Y10T428/31663
摘要： Disclosed are compounds produced by a process comprising the step of reacting an amine reactant with an epoxide reactant to form a hydrolytically stable carbon-nitrogen bond therebetween, wherein at least one of the amine or epoxide reactants comprises a terminal alkoxysiyl group. Also disclosed are curable compositions comprising the compounds of the present invention and the cured products derived therefrom.
摘要翻译：公开了通过包括以下步骤的方法生产的化合物：使胺反应物与环氧化物反应物反应以在其间形成水解稳定的碳 - 氮键，其中至少一种胺或环氧化物反应物包含末端烷氧基甲硅烷基。还公开了包含本发明化合物和由其衍生的固化产物的可固化组合物。

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