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1. 发明授权

KR100928587B1 XY STAGE USING LASER INTERFEROMETER 无效
标题翻译： XY阶段使用激光干涉仪
公开(公告)号：KR100928587B1
公开(公告)日：2009-11-24
申请号：KR20090001635
申请日：2009-01-08
申请人： INATECH CO LTD , ANI MOTIONTECH CO LTD , SHIN DONG HYUK , LEE GIL YOUNG
发明人： LEE GIL YOUNG , SHIN DONG HYUK
IPC分类号： G01B9/02 , G01B11/00
摘要： PURPOSE: An XY stage in which the laser interferometer is mounted is provided to remove the unstableness of a laser beam which is caused by the airflow and the change of pressure and humidity. CONSTITUTION: An XY stage comprises the first and second laser interferometers. The first laser interferometers measure an X-axis displacement by including the first laser beam generator(10), the first splitter(20) for passing and reflecting a laser beam, the first reflector(111), the first detector(40), the first guide pipe(50), and the first vacuum pump(60). The first guide pipe maintains the surroundings of the laser beam under the vacuum condition. The first vacuum pump maintains the inside of the first guide pipe under the vacuum condition. The second laser interferometer measures an Y-axis displacement.
摘要翻译：目的：提供安装激光干涉仪的XY平台，以消除由气流和压力和湿度变化引起的激光束的不稳定性。构成：XY台包括第一和第二激光干涉仪。第一激光干涉仪通过包括第一激光束发生器（10），用于通过和反射激光束的第一分离器（20），第一反射器（111），第一检测器（40），第一导管（50）和第一真空泵（60）。第一引导管在真空条件下保持激光束的周围。第一真空泵在真空条件下保持第一导管的内部。第二激光干涉仪测量Y轴位移。

2. 发明申请

WO2011008015A3 WAFER-DICING METHOD 审中-公开
标题翻译：波形法
公开(公告)号：WO2011008015A3
公开(公告)日：2011-04-21
申请号：PCT/KR2010004562
申请日：2010-07-14
申请人： INATECH CO LTD , SHIN DONG HYUK , LEE GIL YOUNG
发明人： SHIN DONG HYUK , LEE GIL YOUNG
IPC分类号： H01L21/78 , H01L21/301
CPC分类号： H01L21/67092 , B23K26/0624 , B23K26/364 , B23K26/40 , B23K2203/50
摘要： The present invention relates to a wafer-dicing method for separating a wafer into a plurality of semiconductor dies, comprising: a step of forming a cutting guide groove, involving irradiating femtosecond pulse laser beams, having a pulse duration of 1 picosecond or less, onto the wafer attached to a stretchable dicing tape to form cutting guide grooves into a predetermined pattern on one surface of the wafer; a cracking step of cracking the wafer from ends of the cutting guide grooves toward the other surface of the wafer; and a dicing tape stretching step of stretching the dicing tape to separate the plurality of semiconductor dies from each other.
摘要翻译：本发明涉及一种用于将晶片分离成多个半导体晶片的晶片切割方法，包括：将具有1皮秒或更短脉冲持续时间的飞秒脉冲激光束照射到切割引导槽的步骤，所述晶片附接到可拉伸的切割带，以在所述晶片的一个表面上形成预定图案的切割引导槽; 将晶片从切割引导槽的端部朝向晶片的另一表面开裂的破裂步骤; 以及切割带拉伸步骤，用于拉伸切割带以将多个半导体管芯彼此分离。

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