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1. 发明授权

US07808077B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07808077B2
公开(公告)日：2010-10-05
申请号：US12185578
申请日：2008-08-04
申请人： Kyoko Egashira , Shin Hashimoto
发明人： Kyoko Egashira , Shin Hashimoto
IPC分类号： H01L29/00
CPC分类号： H01L28/60 , H01L21/76838 , H01L21/76895 , H01L23/5223 , H01L23/5228 , H01L27/0805 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device is composed of: an interconnect made of a first conductive film and a second conductive film that are stacked in sequence from the interconnect underside on an insulating film formed on a substrate; and a capacitor composed of a lower capacitor electrode made of the first conductive film, a dielectric film formed on the lower capacitor electrode, and an upper capacitor electrode made of the second conductive film and formed on the dielectric film.
摘要翻译：半导体器件由以下部分构成：由第一导电膜和第二导电膜构成的互连，其从形成在基板上的绝缘膜上的互连下侧依次堆叠; 以及由第一导电膜制成的下部电容电极，形成在下部电容电极上的电介质膜和形成在该电介质膜上的由上述第二导电膜构成的上部电容电极构成的电容器。

2. 发明授权

US5902134A Dry etching post-treatment method and method for manufacturing a semiconductor device 失效
标题翻译：干蚀刻后处理方法及半导体装置的制造方法
公开(公告)号：US5902134A
公开(公告)日：1999-05-11
申请号：US905736
申请日：1997-08-04
申请人： Kyoko Egashira
发明人： Kyoko Egashira
IPC分类号： H01L21/311 , H01L21/00
CPC分类号： H01L21/31116
摘要： The present invention has an object of providing a method for manufacturing a semiconductor device wherein an underlying silicon substrate or polycrystalline silicon film is less subject to etching during ashing. A method for manufacturing a semiconductor device according to the present invention comprises the steps of: covering a predetermined portion of an insulating film (2) on the silicon substrate (1) or the polycrystalline silicon film with a photoresist (3); removing a portion of said insulating film (2) not covered with the photoresist by dry etching using an etching gas containing carbon and fluorine; and removing a fluorocarbon film (6) deposited on the surface of the substrate and said photoresist 3 by ashing using at least an oxygen gas while controlling the temperature at 100.degree. C. or lower, wherein the underlying silicon substrate or polycrystalline silicon film is less subject to etching during the ashing.
摘要翻译：本发明的目的是提供一种用于制造半导体器件的方法，其中下面的硅衬底或多晶硅膜在灰化期间较少受到蚀刻。根据本发明的半导体器件的制造方法包括以下步骤：用光致抗蚀剂（3）覆盖硅衬底（1）或多晶硅膜上的绝缘膜（2）的预定部分; 使用含有碳和氟的蚀刻气体通过干蚀刻去除未被光致抗蚀剂覆盖的所述绝缘膜（2）的一部分; 以及通过使用至少一种氧气进行灰化同时沉积在基板表面上的氟碳膜（6）和所述光致抗蚀剂3，同时控制温度在100℃或更低，其中下面的硅衬底或多晶硅膜较少在灰化期间进行蚀刻。

3. 发明授权

US07981817B2 Method for manufacturing semiconductor device using multiple ion implantation masks 有权
标题翻译：使用多个离子注入掩模制造半导体器件的方法
公开(公告)号：US07981817B2
公开(公告)日：2011-07-19
申请号：US12523073
申请日：2007-08-31
申请人： Koichi Hashimoto , Shin Hashimoto , Kyoko Egashira
发明人： Koichi Hashimoto , Shin Hashimoto , Kyoko Egashira
IPC分类号： H01L21/265
CPC分类号： H01L29/7802 , H01L21/0465 , H01L21/266 , H01L29/0696 , H01L29/086 , H01L29/0869 , H01L29/1608 , H01L29/66068 , H01L29/66719 , Y10S438/942 , Y10S438/943 , Y10S438/945 , Y10S438/951
摘要： A production method for a semiconductor device includes providing a semiconductor substrate having semiconductor layer of a first conductivity type formed on a surface thereof; forming a first mask so as to cover a predetermined region of the semiconductor layer; (c) forming a well region of a second conductivity type by implanting impurity ions of the second conductivity type into the semiconductor layer having the first mask formed thereon; reducing the thickness of the first mask by removing a portion of the first mask; forming a second mask covering a portion of the well region by using photolithography; and forming a source region of the first conductivity type by implanting impurity ions of the first conductivity type into the semiconductor layer having the first mask with the reduced thickness and the second mask formed thereon.
摘要翻译：一种半导体器件的制造方法，其特征在于，在其表面形成有具有第一导电型半导体层的半导体基板，形成第一掩模以覆盖半导体层的预定区域; 通过将第二导电类型的杂质离子注入到其上形成有第一掩模的半导体层中，形成第二导电类型的阱区; 通过去除第一掩模的一部分来减小第一掩模的厚度; 通过使用光刻法形成覆盖阱区的一部分的第二掩模; 以及通过将具有第一导电类型的杂质离子注入具有减小的厚度的第一掩模的半导体层和形成在其上的第二掩模来形成第一导电类型的源极区域。

4. 发明申请

US20100048004A1 SEMICONDUCTOR DEVICE AND PROCESS FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100048004A1
公开(公告)日：2010-02-25
申请号：US12523073
申请日：2007-08-31
申请人： Koichi Hashimoto , Shin Hashimoto , Kyoko Egashira
发明人： Koichi Hashimoto , Shin Hashimoto , Kyoko Egashira
IPC分类号： H01L21/265
CPC分类号： H01L29/7802 , H01L21/0465 , H01L21/266 , H01L29/0696 , H01L29/086 , H01L29/0869 , H01L29/1608 , H01L29/66068 , H01L29/66719 , Y10S438/942 , Y10S438/943 , Y10S438/945 , Y10S438/951
摘要： A production method for a semiconductor device includes the steps of: (a) providing a semiconductor substrate having a semiconductor layer 2 of a first conductivity type formed on a surface thereof; (b) forming a first mask 30 so as to cover a predetermined region of the semiconductor layer 2; (c) forming a well region 6 of a second conductivity type by implanting impurity ions of the second conductivity type into the semiconductor layer 2 having the first mask 30 formed thereon; (d) reducing the thickness t1 of the first mask 30 by removing a portion of the first mask 30; (e) forming a second mask 34 covering a portion of the well region 6 by using photolithography; and (f) forming a source region 8 of the first conductivity type by implanting impurity ions of the first conductivity type into the semiconductor layer 2 having the first mask 30′ with the reduced thickness and the second mask 34 formed thereon.
摘要翻译：半导体器件的制造方法包括以下步骤：（a）提供具有形成在其表面上的第一导电类型的半导体层2的半导体衬底; （b）形成第一掩模30以覆盖半导体层2的预定区域; （c）通过将第二导电类型的杂质离子注入到其上形成有第一掩模30的半导体层2中，形成第二导电类型的阱区6; （d）通过去除第一掩模30的一部分来减小第一掩模30的厚度t1; （e）通过使用光刻法形成覆盖阱区域6的一部分的第二掩模34; 以及（f）通过将具有第一导电类型的杂质离子注入具有减小的厚度的第一掩模30'和形成在其上的第二掩模34的半导体层2中，形成第一导电类型的源极区8。

5. 发明授权

US07538005B2 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07538005B2
公开(公告)日：2009-05-26
申请号：US11714195
申请日：2007-03-06
申请人： Kyoko Egashira , Shin Hashimoto
发明人： Kyoko Egashira , Shin Hashimoto
IPC分类号： H01L21/20
CPC分类号： H01L28/60 , H01L21/76838 , H01L21/76895 , H01L23/5223 , H01L23/5228 , H01L27/0805 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device is composed of: an interconnect made of a first conductive film and a second conductive film that are stacked in sequence from the interconnect underside on an insulating film formed on a substrate; and a capacitor composed of a lower capacitor electrode made of the first conductive film, a dielectric film formed on the lower capacitor electrode, and an upper capacitor electrode made of the second conductive film and formed on the dielectric film.
摘要翻译：半导体器件由以下部分构成：由第一导电膜和第二导电膜构成的互连，其从形成在基板上的绝缘膜上的互连下侧依次层叠; 以及由第一导电膜制成的下部电容电极，形成在下部电容电极上的电介质膜和形成在该电介质膜上的由上述第二导电膜构成的上部电容电极构成的电容器。

6. 发明申请

US20070155147A1 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070155147A1
公开(公告)日：2007-07-05
申请号：US11714195
申请日：2007-03-06
申请人： Kyoko Egashira , Shin Hashimoto
发明人： Kyoko Egashira , Shin Hashimoto
IPC分类号： H01L21/3205
CPC分类号： H01L28/60 , H01L21/76838 , H01L21/76895 , H01L23/5223 , H01L23/5228 , H01L27/0805 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device is composed of: an interconnect made of a first conductive film and a second conductive film that are stacked in sequence from the interconnect underside on an insulating film formed on a substrate; and a capacitor composed of a lower capacitor electrode made of the first conductive film, a dielectric film formed on the lower capacitor electrode, and an upper capacitor electrode made of the second conductive film and formed on the dielectric film.
摘要翻译：半导体器件由以下部分构成：由第一导电膜和第二导电膜构成的互连，其从形成在基板上的绝缘膜上的互连下侧依次堆叠; 以及由第一导电膜制成的下部电容电极，形成在下部电容电极上的电介质膜和形成在该电介质膜上的由上述第二导电膜构成的上部电容电极构成的电容器。

7. 发明授权

US07037371B1 Method for fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07037371B1
公开(公告)日：2006-05-02
申请号：US09856823
申请日：2000-10-03
申请人： Shin Hashimoto , Takenobu Kishida , Kyoko Egashira , Yoshifumi Hata , Toru Nishiwaki , Tomoya Tanaka
发明人： Shin Hashimoto , Takenobu Kishida , Kyoko Egashira , Yoshifumi Hata , Toru Nishiwaki , Tomoya Tanaka
IPC分类号： H01L21/28
CPC分类号： H01L21/26506 , H01L21/28518 , H01L29/665 , H01L29/6659 , H01L29/7833 , Y10S148/019 , Y10S148/046
摘要： After distributing a nonmetal element in a region in the vicinity of a surface portion of a semiconductor layer, a metal film is deposited on the semiconductor layer. Next, a semiconductor-metal compound layer is epitaxially grown in the surface portion of the semiconductor layer by causing a reaction between an element included in the semiconductor layer and a metal included in the metal film through annealing carried out on the metal film.
摘要翻译：在半导体层的表面部分附近的区域中分布非金属元素之后，在半导体层上沉积金属膜。接下来，通过在金属膜上进行退火，通过在半导体层中包含的元素与包含在金属膜中的金属之间的反应而在半导体层的表面部分中外延生长半导体 - 金属化合物层。

8. 发明授权

US06469535B1 Method for examining semiconductor substrate, and method for controlling fabrication process of semiconductor devices 失效
标题翻译：用于检查半导体衬底的方法，以及用于控制半导体器件的制造工艺的方法
公开(公告)号：US06469535B1
公开(公告)日：2002-10-22
申请号：US09327467
申请日：1999-06-08
申请人： Kyoko Egashira , Koji Eriguchi
发明人： Kyoko Egashira , Koji Eriguchi
IPC分类号： G01R3126
CPC分类号： H01L22/14
摘要： A particular portion of a damaged layer within a semiconductor substrate, which is likely to affect the performance of resulting semiconductor devices, is distinguished from the other negligible portions thereof and the depth of that non-negligible portion is detected. An Si substrate is placed on a stage, and a mercury electrode, which forms a Schottky barrier with the Si substrate, is brought into contact with the surface of the Si substrate. When a constant current is supplied from a constant current source between the mercury electrode and the Si substrate, charges are trapped at the trap centers in the damaged layer within the Si substrate. As a result, a potential on the conduction band rises near the surface of the Si substrate. And if the voltage between the electrode and the substrate is increased along with the potential rise, a constant current flows. By measuring the variation in the saturated voltage with time using a voltmeter, the defect density can be estimated and the depth of only the particular portion of the damaged layer, having impact on the resulting devices, can be detected.
摘要翻译：可能影响所得半导体器件的性能的半导体衬底内的受损层的特定部分与其他可忽略的部分不同，并且检测到该不可忽视部分的深度。将Si衬底放置在台上，并与Si衬底形成肖特基势垒的汞电极与Si衬底的表面接触。当从恒定电流源在汞电极和Si衬底之间提供恒定电流时，电荷被捕获在Si衬底内的损坏层的陷阱中心处。结果，导电带上的电位在Si衬底的表面附近上升。并且如果电极和衬底之间的电压随着电位上升而增加，则恒定电流流动。通过使用电压表测量饱和电压随时间的变化，可以估计缺陷密度，并且可以检测到仅影响所得器件的受损层的特定部分的深度。

9. 发明申请

US20090051007A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090051007A1
公开(公告)日：2009-02-26
申请号：US12185578
申请日：2008-08-04
申请人： Kyoko Egashira , Shin Hashimoto
发明人： Kyoko Egashira , Shin Hashimoto
IPC分类号： H01L29/92
CPC分类号： H01L28/60 , H01L21/76838 , H01L21/76895 , H01L23/5223 , H01L23/5228 , H01L27/0805 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device is composed of: an interconnect made of a first conductive film and a second conductive film that are stacked in sequence from the interconnect underside on an insulating film formed on a substrate; and a capacitor composed of a lower capacitor electrode made of the first conductive film, a dielectric film formed on the lower capacitor electrode, and an upper capacitor electrode made of the second conductive film and formed on the dielectric film.
摘要翻译：半导体器件由以下部分构成：由第一导电膜和第二导电膜构成的互连，其从形成在基板上的绝缘膜上的互连下侧依次层叠; 以及由第一导电膜制成的下部电容电极，形成在下部电容电极上的电介质膜和形成在该电介质膜上的由上述第二导电膜构成的上部电容电极构成的电容器。

10. 发明授权

US07190045B2 Semiconductor device and method for fabricating the same 有权
公开(公告)号：US07190045B2
公开(公告)日：2007-03-13
申请号：US10812880
申请日：2004-03-31
申请人： Kyoko Egashira , Shin Hashimoto
发明人： Kyoko Egashira , Shin Hashimoto
IPC分类号： H01L29/00
CPC分类号： H01L28/60 , H01L21/76838 , H01L21/76895 , H01L23/5223 , H01L23/5228 , H01L27/0805 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device is composed of: an interconnect made of a first conductive film and a second conductive film that are stacked in sequence from the interconnect underside on an insulating film formed on a substrate; and a capacitor composed of a lower capacitor electrode made of the first conductive film, a dielectric film formed on the lower capacitor electrode, and an upper capacitor electrode made of the second conductive film and formed on the dielectric film.

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