专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

KR20180051371A 자가 발전 환풍기 审中-公开
公开(公告)号：KR20180051371A
公开(公告)日：2018-05-16
申请号：KR20170139174
申请日：2017-10-25
申请人： JANG KYEONG HAN
发明人： JANG KYEONG HAN
IPC分类号： F23L17/02 , H02K7/18
摘要： 자가발전환풍기가개시된다. 본발명의자가발전환풍기는, 대형공장이나발전소를포함하는대형구조물의굴뚝에마련되며, 안전발판이구비된본체; 본체의내부에회전가능하게결합되며, 굴뚝에서배출되는기체에의해회전되는회전부; 회전부의외벽에마련되는자성체; 및자성체와이격되도록본체의내벽에탈착가능하게결합되는복수의코일모듈을포함하는것을특징으로한다.

2. 发明申请

US20140037564A1 NOVEL COMPOUND HAVING SKIN-WHITENING, ANTI-OXIDIZING AND PPAR ACTIVITIES AND MEDICAL USE THEREFOR 有权
标题翻译：具有皮肤白化，抗氧化和PPAR活性的新型化合物及其医疗用途
公开(公告)号：US20140037564A1
公开(公告)日：2014-02-06
申请号：US13984567
申请日：2012-02-08
申请人： Hae Young Chung , Min Hi Park , Young Mi Ha , Yu Kyeong Han , Ji Young Park , Yun Jung Park , Jin Ah Kim , Ji Yeon Lee , Yu Min Song , Hyung Ryong Moon
发明人： Hae Young Chung , Min Hi Park , Young Mi Ha , Yu Kyeong Han , Ji Young Park , Yun Jung Park , Jin Ah Kim , Ji Yeon Lee , Yu Min Song , Hyung Ryong Moon
IPC分类号： A61K8/49 , A61Q19/02 , C07D277/66
CPC分类号： A61K8/49 , A61K8/4946 , A61K8/4986 , A61K31/426 , A61K2800/78 , A61Q19/02 , A61Q19/06 , C07D235/18 , C07D277/06 , C07D277/66
摘要： Provided are a novel compound having skin-whitening, anti-oxidizing and PPAR activities and a medical use thereof, and the compound has skin-whitening activities for the suppression of tyrosinase, and accordingly, is useful for use in skin-whitening pharmaceutical composition or cosmetic products; has anti-oxidant activities, and accordingly, is useful for the prevention and treatment of skin-aging; and has PPAR activities, and in particular, PPARα and PPARγ activities, and accordingly, is useful for use in pharmaceutical compositions or health foods which are effective for the prevention and treatment of obesity, metabolic disease, or cardiovascular disease.
摘要翻译：提供具有皮肤美白，抗氧化和PPAR活性的新型化合物及其医疗用途，并且该化合物具有抑制酪氨酸酶的皮肤美白活性，因此可用于皮肤美白药物组合物或化妆品; 具有抗氧化活性，因此可用于预防和治疗皮肤老化; 并具有PPAR活性，特别是PPARα和PPARγ活性，因此可用于有效预防和治疗肥胖，代谢疾病或心血管疾病的药物组合物或保健食品。

3. 发明申请

US20090213659A1 FLASH MEMORY DEVICE AND FLASH MEMORY SYSTEM INCLUDING THE SAME 审中-公开
标题翻译：闪存存储器件和包括其的闪存存储器系统
公开(公告)号：US20090213659A1
公开(公告)日：2009-08-27
申请号：US12393397
申请日：2009-02-26
申请人： Kyeong-Han Lee , Seok-Cheon Kwon , Dong-Yang Lee
发明人： Kyeong-Han Lee , Seok-Cheon Kwon , Dong-Yang Lee
IPC分类号： G11C16/06 , G11C7/00
CPC分类号： G11C16/26 , G11C7/10 , G11C7/1018 , G11C7/1051 , G11C7/106 , G11C7/1066 , G11C7/22 , G11C7/222 , G11C16/08 , G11C16/102 , G11C16/32 , G11C2207/107 , G11C2207/2281
摘要： A flash memory device including: a memory cell array; a signal generator inputting a first data fetch signal and outputting a second data fetch signal; and an output buffer circuit configured to output data from the memory cell array in sync with rising and falling edges of the second data fetch signal, wherein second data fetch signal is output along with data output from the output buffer circuit.
摘要翻译：一种闪存装置，包括：存储单元阵列; 信号发生器输入第一数据提取信号并输出第二数据获取信号; 以及输出缓冲器电路，被配置为与第二数据提取信号的上升沿和下降沿同步地从存储单元阵列输出数据，其中第二数据取出信号与从输出缓冲器电路输出的数据一起输出。

4. 发明授权

US07257028B2 Temperature compensated bit-line precharge 有权
标题翻译：温度补偿位线预充电
公开(公告)号：US07257028B2
公开(公告)日：2007-08-14
申请号：US10884152
申请日：2004-07-01
申请人： Kyeong-Han Lee , Sung-Soo Lee
发明人： Kyeong-Han Lee , Sung-Soo Lee
IPC分类号： G11C16/04 , G11C7/00
CPC分类号： G11C16/24 , G11C16/0483 , G11C16/26
摘要： A nonvolatile semiconductor memory device compensates for temperature changes by holding constant a bit line precharge level. A memory device according to the present invention may include an electrically programmable memory cell array connected to a plurality of word lines and a plurality of bit lines, a bit line voltage supplying circuit for supplying a bit line voltage to the bit lines, a shut-off circuit connecting the memory cell array and the bit line voltage supplying circuit, and a shut-off controlling circuit for controlling the shut off circuit. The shut-off controlling circuit may be constructed to compensate for temperature changes in order to hold the bit-line precharge level constant.
摘要翻译：非易失性半导体存储器件通过保持恒定的位线预充电电平来补偿温度变化。根据本发明的存储器件可以包括连接到多个字线和多个位线的电可编程存储单元阵列，用于向位线提供位线电压的位线电压提供电路，连接存储单元阵列和位线电压供给电路的断开电路以及用于控制截止电路的切断控制电路。关断控制电路可以被构造为补偿温度变化，以便保持位线预充电电平恒定。

5. 发明申请

US20050036369A1 Temperature compensated bit-line precharge 有权
标题翻译：温度补偿位线预充电
公开(公告)号：US20050036369A1
公开(公告)日：2005-02-17
申请号：US10884152
申请日：2004-07-01
申请人： Kyeong-Han Lee , Sung-Soo Lee
发明人： Kyeong-Han Lee , Sung-Soo Lee
IPC分类号： G11C16/06 , G11C11/34 , G11C16/02 , G11C16/04 , G11C16/24 , G11C16/26
CPC分类号： G11C16/24 , G11C16/0483 , G11C16/26
摘要： A nonvolatile semiconductor memory device compensates for temperature changes by holding constant a bit line precharge level. A memory device according to the present invention may include an electrically programmable memory cell array connected to a plurality of word lines and a plurality of bit lines, a bit line voltage supplying circuit for supplying a bit line voltage to the bit lines, a shut-off circuit connecting the memory cell array and the bit line voltage supplying circuit, and a shut-off controlling circuit for controlling the shut off circuit. The shut-off controlling circuit may be constructed to compensate for temperature changes in order to hold the bit-line precharge level constant.
摘要翻译：非易失性半导体存储器件通过保持恒定的位线预充电电平来补偿温度变化。根据本发明的存储器件可以包括连接到多个字线和多个位线的电可编程存储单元阵列，用于向位线提供位线电压的位线电压提供电路，连接存储单元阵列和位线电压供给电路的断开电路以及用于控制截止电路的切断控制电路。关断控制电路可以被构造为补偿温度变化，以便保持位线预充电电平恒定。

6. 发明授权

US08889881B2 Compound having skin-whitening, anti-oxidizing and PPAR activities and medical use therefor 有权
标题翻译：具有皮肤美白，抗氧化和PPAR活性及其医疗用途的化合物
公开(公告)号：US08889881B2
公开(公告)日：2014-11-18
申请号：US13984567
申请日：2012-02-08
申请人： Hae Young Chung , Min Hi Park , Young Mi Ha , Yu Kyeong Han , Ji Young Park , Yun Jung Park , Jin Ah Kim , Ji Yeon Lee , Yu Min Song , Hyung Ryong Moon
发明人： Hae Young Chung , Min Hi Park , Young Mi Ha , Yu Kyeong Han , Ji Young Park , Yun Jung Park , Jin Ah Kim , Ji Yeon Lee , Yu Min Song , Hyung Ryong Moon
IPC分类号： C07D277/66 , A61Q19/02 , A61K31/426 , C07D235/18 , C07D277/06 , A61K8/49 , A61Q19/06
CPC分类号： A61K8/49 , A61K8/4946 , A61K8/4986 , A61K31/426 , A61K2800/78 , A61Q19/02 , A61Q19/06 , C07D235/18 , C07D277/06 , C07D277/66
摘要： Provided are a novel compound having skin-whitening, anti-oxidizing and PPAR activities and a medical use thereof, and the compound has skin-whitening activities for the suppression of tyrosinase, and accordingly, is useful for use in skin-whitening pharmaceutical composition or cosmetic products; has anti-oxidant activities, and accordingly, is useful for the prevention and treatment of skin-aging; and has PPAR activities, and in particular, PPARα and PPARγ activities, and accordingly, is useful for use in pharmaceutical compositions or health foods which are effective for the prevention and treatment of obesity, metabolic disease, or cardiovascular disease.
摘要翻译：提供具有皮肤美白，抗氧化和PPAR活性的新型化合物及其医疗用途，并且该化合物具有抑制酪氨酸酶的皮肤美白活性，因此可用于皮肤美白药物组合物或化妆品; 具有抗氧化活性，因此可用于预防和治疗皮肤老化; 并具有PPAR活性，特别是PPARα和PPARγ活性，因此可用于有效预防和治疗肥胖，代谢疾病或心血管疾病的药物组合物或保健食品。

7. 发明授权

US08203890B2 Data output buffer whose mode switches according to operation frequency and semiconductor memory device having the same 有权
标题翻译：数据输出缓冲器，其模式根据工作频率切换，半导体存储器件具有相同的功能
公开(公告)号：US08203890B2
公开(公告)日：2012-06-19
申请号：US12427817
申请日：2009-04-22
申请人： Kyeong-Han Lee , Young-Joon Choi
发明人： Kyeong-Han Lee , Young-Joon Choi
IPC分类号： G11C7/10
CPC分类号： G11C7/1051 , G11C7/1057 , G11C16/26
摘要： A data output buffer switches it operating mode according to its operating frequency. The data output buffer includes a delay control unit, and a buffer unit. The buffer unit provides data of an internal buffer input line to an external buffer output line. The delay control unit generates a buffer enable signal corresponding to a received reference control signal. The buffer unit blocks the provision of the data to the buffer output line in response to a deactivation of the buffer enable signal. The buffer enable signal remains in an activated state when the period of the reference control signal is shorter than a reference period. The data output buffer may be included in a semiconductor memory device.
摘要翻译：数据输出缓冲器根据其工作频率切换其工作模式。数据输出缓冲器包括延迟控制单元和缓冲单元。缓冲单元将内部缓冲器输入线的数据提供给外部缓冲器输出线。延迟控制单元产生对应于接收到的参考控制信号的缓冲器使能信号。响应于缓冲器使能信号的去激活，缓冲器单元阻止向缓冲器输出线提供数据。当参考控制信号的周期短于参考周期时，缓冲使能信号保持在激活状态。数据输出缓冲器可以包括在半导体存储器件中。

8. 发明授权

US07535773B2 Data output buffer whose mode switches according to operation frequency and semiconductor memory device having the same 有权
标题翻译：数据输出缓冲器，其模式根据工作频率切换，半导体存储器件具有相同的功能
公开(公告)号：US07535773B2
公开(公告)日：2009-05-19
申请号：US11222800
申请日：2005-09-12
申请人： Kyeong-Han Lee , Young-Joon Choi
发明人： Kyeong-Han Lee , Young-Joon Choi
IPC分类号： G11C7/10
CPC分类号： G11C7/1051 , G11C7/1057 , G11C16/26
摘要： A data output buffer switches it operating mode according to its operating frequency. The data output buffer includes a delay control unit, and a buffer unit. The buffer unit provides data of an internal buffer input line to an external buffer output line. The delay control unit generates a buffer enable signal corresponding to a received reference control signal. The buffer unit blocks the provision of the data to the buffer output line in response to a deactivation of the buffer enable signal. The buffer enable signal remains in an activated state when the period of the reference control signal is shorter than a reference period. The data output buffer may be included in a semiconductor memory device.
摘要翻译：数据输出缓冲器根据其工作频率切换其工作模式。数据输出缓冲器包括延迟控制单元和缓冲单元。缓冲单元将内部缓冲器输入线的数据提供给外部缓冲器输出线。延迟控制单元产生对应于接收到的参考控制信号的缓冲器使能信号。响应于缓冲器使能信号的去激活，缓冲器单元阻止向缓冲器输出线提供数据。当参考控制信号的周期短于参考周期时，缓冲使能信号保持在激活状态。数据输出缓冲器可以包括在半导体存储器件中。

9. 发明申请

US20080141059A1 Flash Memory Devices with High Data Transmission Rates and Memory Systems Including Such Flash Memory Devices 有权
标题翻译：具有高数据传输速率的闪存器件和包括这种闪存器件的存储器系统
公开(公告)号：US20080141059A1
公开(公告)日：2008-06-12
申请号：US11953385
申请日：2007-12-10
申请人： Yeon-Ho Kim , Kyeong-Han Lee , Jong-Hwa Kim , In-Young Kim , Young-Joon Choi , Seok-Cheon Kwon
发明人： Yeon-Ho Kim , Kyeong-Han Lee , Jong-Hwa Kim , In-Young Kim , Young-Joon Choi , Seok-Cheon Kwon
IPC分类号： G06F1/12 , G06F12/02
CPC分类号： G06F1/12 , G11C7/10 , G11C7/1078 , G11C7/109 , G11C16/32
摘要： A flash memory device includes a memory cell array, a clock signal input, an input for receiving a signal designating a writing operating mode, a plurality of data input/output pads, and a data input/output buffer circuit that is electrically connected to the clock signal input and to the plurality of data input/output pads. The data input/output buffer circuit is configured to receive data that is to be written to the memory cell array through the data input/output pads in synchronization with a clock signal that is applied to the clock signal input in response to activation of the signal designating the writing operating mode.
摘要翻译：闪速存储器件包括存储单元阵列，时钟信号输入端，用于接收指定写入操作模式的信号的输入端，多个数据输入/输出焊盘和数据输入/输出缓冲电路，时钟信号输入和多个数据输入/输出焊盘。数据输入/输出缓冲电路被配置为响应于信号的激活而与应用于时钟信号输入的时钟信号同步地通过数据输入/输出焊盘接收要写入存储单元阵列的数据指定书写操作模式。

10. 发明申请

US20070133791A1 Method for controlling security channel in MAC security network and terminal using the same 有权
标题翻译：用于控制MAC安全网络和终端中安全通道的方法
公开(公告)号：US20070133791A1
公开(公告)日：2007-06-14
申请号：US11634995
申请日：2006-12-07
申请人： Kyeong Han , Jee Eun , Yool Kwon
发明人： Kyeong Han , Jee Eun , Yool Kwon
IPC分类号： H04L9/00
CPC分类号： H04L9/12 , H04L63/068 , H04L63/164
摘要： A method for controlling a security channel for reducing system load by extending the use period of a security association key is provided. In this method, an upper bit initial value of an initialization vector of an encryption algorithm and a using range thereof are shared between a transmitting side and a receiving side when a security channel is created. Then, a secure association is created between a transmitting side and a receiving side by setting an association number, a next packet number which is a lower bit value of an initialization vector, and a secure association key. Afterward, a packet number is modified whenever a frame is transmitted until all of packet numbers are used. When all packet numbers are used, the upper bit value of the initialization vector changes.
摘要翻译：提供了一种通过扩展安全关联密钥的使用周期来控制用于减少系统负载的安全信道的方法。在该方法中，当创建安全信道时，在发送侧和接收侧之间共享加密算法的初始化向量的高位初始值及其使用范围。然后，通过设置关联号码，作为初始化向量的较低位值的下一个分组号码和安全关联密钥，在发送侧和接收侧之间建立安全关联。之后，每当发送帧直到使用所有分组号时，分组号被修改。当使用所有分组号时，初始化向量的高位值变化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式