专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20170110508A1 MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
公开(公告)号：US20170110508A1
公开(公告)日：2017-04-20
申请号：US15202708
申请日：2016-07-06
申请人： Kwang-Seok KIM , Kee-Won KIM , Whan-Kyun KIM , Sang-Hwan PARK , Young-Man JANG
发明人： Kwang-Seok KIM , Kee-Won KIM , Whan-Kyun KIM , Sang-Hwan PARK , Young-Man JANG
IPC分类号： H01L27/22 , H01L43/08 , H01L43/02 , H01L43/10
CPC分类号： H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A magnetoresistive random access memory device includes a free layer, a tunnel barrier layer, an insulation barrier layer, a pinned layer, and a vertical polarizer structure. The tunnel barrier layer and the insulation barrier layer directly contacts different surfaces of the free layer. The pinned layer structure contacts the tunnel barrier layer and includes at least one pinned layer. The vertical polarizer structure contacts the insulation barrier layer and includes a plurality of magnetization multi-layered structures sequentially stacked. Each magnetization multi-layered structure includes a non-magnetic layer and a magnetic layer sequentially stacked. The pinned layer and the magnetic layer have magnetization directions anti-parallel to each other.

2. 发明申请

US20170040529A1 MAGNETIC MEMORY DEVICE 审中-公开
标题翻译：磁记忆装置
公开(公告)号：US20170040529A1
公开(公告)日：2017-02-09
申请号：US15332460
申请日：2016-10-24
申请人： Ung-hwan PI , Kwang-seok KIM , Kee-won KIM , Sung-chul LEE , Young-man JANG
发明人： Ung-hwan PI , Kwang-seok KIM , Kee-won KIM , Sung-chul LEE , Young-man JANG
IPC分类号： H01L43/04 , H01L43/10 , H01L43/06 , H01L27/22
CPC分类号： H01L43/04 , G11C11/161 , G11C11/1675 , G11C11/18 , H01L27/222 , H01L43/065 , H01L43/08 , H01L43/10
摘要： Provided is a magnetic memory device. The magnetic memory device includes a first magnetization layer, a tunnel barrier disposed on the first magnetization layer, a second magnetization layer disposed on the tunnel barrier, and a spin current assisting layer disposed on at least a portion of a sidewall of the second magnetization layer.
摘要翻译：提供了一种磁存储器件。磁存储器件包括第一磁化层，布置在第一磁化层上的隧道势垒，设置在隧道势垒上的第二磁化层，以及设置在第二磁化层的侧壁的至少一部分上的自旋电流辅助层。

3. 发明授权

US09360160B2 Liquefied natural gas storage container and method for manufacturing the same 有权
标题翻译：液化天然气储存容器及其制造方法
公开(公告)号：US09360160B2
公开(公告)日：2016-06-07
申请号：US13810885
申请日：2012-05-14
申请人： Yong Tai Kim , Joong Kyoo Kang , Jung Han Lee , Seong Woo Park , Young Bin Kwon , Jung Sub Shin , Kwang Seok Kim , Haeng Sung Heo
发明人： Yong Tai Kim , Joong Kyoo Kang , Jung Han Lee , Seong Woo Park , Young Bin Kwon , Jung Sub Shin , Kwang Seok Kim , Haeng Sung Heo
IPC分类号： F17C1/12 , F17C1/16 , F17C5/02 , F17C3/02 , F25J1/00 , F25J1/02 , F17C13/00
CPC分类号： F17C5/02 , F17C3/025 , F17C2201/0109 , F17C2201/0123 , F17C2201/0138 , F17C2201/032 , F17C2201/035 , F17C2201/052 , F17C2201/054 , F17C2203/015 , F17C2203/018 , F17C2203/0329 , F17C2203/0333 , F17C2203/0341 , F17C2203/035 , F17C2203/0629 , F17C2203/0643 , F17C2203/0646 , F17C2203/0648 , F17C2205/0111 , F17C2205/0192 , F17C2205/0305 , F17C2209/232 , F17C2221/033 , F17C2223/0161 , F17C2223/035 , F17C2227/0107 , F17C2227/0376 , F17C2227/0383 , F17C2260/016 , F17C2265/034 , F17C2265/05 , F17C2270/0105 , F17C2270/0113 , F25J1/0022 , F25J1/005 , F25J1/0055 , F25J1/0212 , F25J1/0254 , F25J1/0263 , F25J1/0265 , F25J1/0272 , F25J2205/20 , F25J2205/24 , F25J2205/84 , F25J2220/66 , F25J2220/68 , F25J2290/44 , F25J2290/62
摘要： Provided are an LNG storage container with an inner shell, which is capable of efficiently storing LNG or pressurized LNG (PLNG) pressurized at a predetermined pressure and supplying the LNG or PLNG to a consumption place, and capable of reducing manufacturing costs by minimizing the use of a metal having excellent low temperature characteristic, and a method for manufacturing the same. The LNG storage container includes: an inner shell configured to store LNG inside; an outer shell configured to enclose the outside of the inner shell such that a space is formed between the inner shell and the outer shell; a support installed in the space between the inner shell and the outer shell to support the inner shell and the outer shell; and a heat insulation layer part installed in the space between the inner shell and the outer shell and configured to reduce a heat transfer.
摘要翻译：提供一种具有内壳的LNG储存容器，其能够有效地储存以预定压力加压的LNG或加压LNG（PLNG），并将LNG或PLNG提供给消费地点，并且能够通过最小化使用来降低制造成本具有优异的低温特性的金属及其制造方法。 LNG储存容器包括：内壳，其构造成在其内部储存LNG; 外壳，其构造成包围所述内壳的外部，使得在所述内壳和所述外壳之间形成空间; 安装在内壳和外壳之间的空间中以支撑内壳和外壳的支撑件; 以及安装在内壳和外壳之间的空间中的隔热层部件，其构造为减少热传递。

4. 发明申请

US20160093669A1 Magnetic Memory Devices 有权
标题翻译：磁存储器件
公开(公告)号：US20160093669A1
公开(公告)日：2016-03-31
申请号：US14715633
申请日：2015-05-19
申请人： Sung-Chul LEE , Kwang-Seok KIM , Kee-Won KIM , Young-Man JANG , Ung-Hwan PI
发明人： Sung-Chul LEE , Kwang-Seok KIM , Kee-Won KIM , Young-Man JANG , Ung-Hwan PI
IPC分类号： H01L27/22 , H01L43/10
CPC分类号： H01L27/222 , G11C11/161 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
摘要： Magnetic memory devices may include a substrate, a circuit device on the substrate, a plurality of lower electrodes electrically connected to the circuit device, a magnetic tunnel junction (MTJ) structure commonly provided on the plurality of the lower electrodes, and a plurality of upper electrodes on the MTJ structure. The MTJ structure may include a plurality of magnetic material patterns and a plurality of insulation material patterns separating the magnetic material patterns from each other.
摘要翻译：磁存储器件可以包括衬底，衬底上的电路器件，电连接到电路器件的多个下电极，通常设置在多个下电极上的磁隧道结（MTJ）结构，以及多个上电极 MTJ结构上的电极。 MTJ结构可以包括多个磁性材料图案和将磁性材料图案彼此分开的多个绝缘材料图案。

5. 发明授权

US08848432B2 Magnetoresistive elements and memory devices including the same 有权
标题翻译：磁阻元件和包括其的存储器件
公开(公告)号：US08848432B2
公开(公告)日：2014-09-30
申请号：US13591809
申请日：2012-08-22
申请人： Sung-chul Lee , Kwang-seok Kim , Kee-won Kim , Young-man Jang , Ung-hwan Pi
发明人： Sung-chul Lee , Kwang-seok Kim , Kee-won Kim , Young-man Jang , Ung-hwan Pi
IPC分类号： G11C11/16 , G11C11/15 , H01L43/08
CPC分类号： G11C11/161 , G11C11/15 , H01L43/08 , Y10T428/1121
摘要： Magnetoresistive elements, and memory devices including the same, include a free layer having a changeable magnetization direction, a pinned layer facing the free layer and having a fixed magnetization direction, and an auxiliary element on a surface of the pinned layer. The auxiliary element has a width smaller than a width of the pinned layer, and a magnetization direction fixed to a direction the same as a direction of the fixed magnetization direction of the pinned layer.
摘要翻译：磁阻元件和包括它们的存储器件包括具有可变磁化方向的自由层，面向自由层的固定层并且具有固定的磁化方向，以及在被钉扎层的表面上的辅助元件。辅助元件的宽度小于钉扎层的宽度，并且固定在与被钉扎层的固定磁化方向的方向相同的方向上的磁化方向。

6. 发明授权

US08826323B2 Method for switching between minor channels for digital televisions 有权
标题翻译：用于数字电视的次要通道之间切换的方法
公开(公告)号：US08826323B2
公开(公告)日：2014-09-02
申请号：US12189359
申请日：2008-08-11
申请人： Kwang Seok Kim
发明人： Kwang Seok Kim
IPC分类号： H04N7/16
CPC分类号： H04N5/50 , H04N5/4401 , H04N21/4263
摘要： A method for switching between minor channels for digital televisions is disclosed. The method includes determining whether a minor channel is in a non-signal state, analyzing information of a major channel, to which the minor channel in the non-signal state pertains, if the minor channel is in the non-signal state, followed by obtaining information of minor channels pertaining to the major channel, and selecting other minor channels excluding the minor channel in the non-signal state based on an analysis of the information of the minor channels to sequentially determine whether the selected minor channels are in a signal state, followed by switching from the minor channel in the non-signal state to a minor channel in the signal state if a minor channel in the signal state is present.
摘要翻译：公开了一种用于数字电视的次要信道之间切换的方法。该方法包括：如果次信道处于非信号状态，则确定次信道是否处于非信号状态，分析非信号状态中的次信道所属的主信道的信息，其次是获取关于主频道的次要频道的信息，并且基于对次要信道的信息的分析来选择在非信号状态中排除次要频道的其他次频道，以顺序地确定所选择的次频道是否处于信号状态如果存在信号状态的次要信道，则以非信号状态的次要信道切换到处于信号状态的次要信道。

7. 发明授权

US08574730B2 Magnetic tracks, information storage devices using magnetic domain wall movement, and methods of manufacturing the same 有权
公开(公告)号：US08574730B2
公开(公告)日：2013-11-05
申请号：US12155896
申请日：2008-06-11
申请人： Young-jin Cho , Sung-chul Lee , Kwang-seok Kim , Ji-young Bae , Sun-ae Seo , Chang-won Lee
发明人： Young-jin Cho , Sung-chul Lee , Kwang-seok Kim , Ji-young Bae , Sun-ae Seo , Chang-won Lee
IPC分类号： G11B5/76 , G11C19/08 , H01L35/04
CPC分类号： G11C19/0841 , G11C11/14
摘要： Information storage devices and methods of manufacturing the same are provided. A magnetic track of the information storage device includes a magnetic layer in which at least one magnetic domain forming region and at least one magnetic domain wall forming region are alternately disposed in a lengthwise direction. The at least one magnetic domain forming regions has a different magnetic anisotropic energy relative to the at least one magnetic domain wall forming region. An intermediate layer is formed under the magnetic layer. The intermediate layer includes at least one first material region and at least one second material region. Each of the at least one first material regions and the at least one second material regions corresponds to one of the at least one magnetic domain forming regions and the at least one magnetic domain wall forming regions.

8. 发明申请

US20130161769A1 MAGNETORESISTIVE ELEMENTS AND MEMORY DEVICES INCLUDING THE SAME 有权
标题翻译：磁性元件和包括其的存储器件
公开(公告)号：US20130161769A1
公开(公告)日：2013-06-27
申请号：US13591809
申请日：2012-08-22
申请人： Sung-chul LEE , Kwang-seok KIM , Kee-won KIM , Young-man JANG , Ung-hwan PI
发明人： Sung-chul LEE , Kwang-seok KIM , Kee-won KIM , Young-man JANG , Ung-hwan PI
IPC分类号： H01L29/82 , G11B5/39
CPC分类号： G11C11/161 , G11C11/15 , H01L43/08 , Y10T428/1121
摘要： Magnetoresistive elements, and memory devices including the same, include a free layer having a changeable magnetization direction, a pinned layer facing the free layer and having a fixed magnetization direction, and an auxiliary element on a surface of the pinned layer. The auxiliary element has a width smaller than a width of the pinned layer, and a magnetization direction fixed to a direction the same as a direction of the fixed magnetization direction of the pinned layer.
摘要翻译：磁阻元件和包括它们的存储器件包括具有可变磁化方向的自由层，面向自由层的固定层并且具有固定的磁化方向，以及在被钉扎层的表面上的辅助元件。辅助元件的宽度小于钉扎层的宽度，并且固定在与被钉扎层的固定磁化方向的方向相同的方向上的磁化方向。

9. 发明申请

US20130155786A1 DATA SENSING CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME 有权
标题翻译：数据传感电路和包括其的存储器件
公开(公告)号：US20130155786A1
公开(公告)日：2013-06-20
申请号：US13605818
申请日：2012-09-06
申请人： Kwang-Seok KIM
发明人： Kwang-Seok KIM
IPC分类号： G11C7/06 , G11C7/02
CPC分类号： G11C7/02 , G11C11/4091 , G11C11/4094
摘要： A data sensing circuit includes: a current source configured to supply a reference current to an output line; a switching precharging unit configured to couple an input line with the output line during a precharge operation of the input line; and a current sinking unit configured to sink a current from the output line in response to a voltage level of the input line.
摘要翻译：数据感测电路包括：被配置为向输出线提供参考电流的电流源; 开关预充电单元，被配置为在输入线的预充电操作期间将输入线耦合到输出线; 以及电流吸收单元，被配置为响应于输入线的电压电平从输出线吸收电流。

10. 发明申请

US20130140657A1 MAGNETIC MEMORY DEVICES INCLUDING FREE MAGNETIC LAYER HAVING THREE-DIMENSIONAL STRUCTURE 审中-公开
标题翻译：包括具有三维结构的自由磁层的磁记忆装置
公开(公告)号：US20130140657A1
公开(公告)日：2013-06-06
申请号：US13572105
申请日：2012-08-10
申请人： Sung-chul LEE , Kwang-seok KIM , Kee-won KIM , Young-man JANG , Ung-hwan PI
发明人： Sung-chul LEE , Kwang-seok KIM , Kee-won KIM , Young-man JANG , Ung-hwan PI
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , H01L43/08
摘要： Magnetic memory devices including a free magnetic layer having a three-dimensional structure, include a switching device and a magnetic tunnel junction (MTJ) cell connected thereto. The MTJ cell includes a lower magnetic layer, a tunnel barrier layer, and a free magnetic layer, which are sequentially stacked. A portion of the free magnetic layer protrudes in a direction away from an upper surface of the tunnel barrier layer.
摘要翻译：包括具有三维结构的自由磁性层的磁存储器件包括与其连接的开关器件和磁性隧道结（MTJ）单元。 MTJ单元包括依次层叠的下磁性层，隧道势垒层和自由磁性层。自由磁性层的一部分沿远离隧道势垒层的上表面的方向突出。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式