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1. 发明授权

US6021058A PWM inverter with zero dead time and initial power supply capacitor charging 失效
标题翻译： PWM逆变器具有零死区时间和初始电源电容充电
公开(公告)号：US6021058A
公开(公告)日：2000-02-01
申请号：US129428
申请日：1998-08-05
申请人： Masahiro Yasohara , Yasushi Kato , Shinichi Emura , Kazuyuki Takada , Yuji Tanaka , Kouji Takada , Ryutaro Arakawa
发明人： Masahiro Yasohara , Yasushi Kato , Shinichi Emura , Kazuyuki Takada , Yuji Tanaka , Kouji Takada , Ryutaro Arakawa
IPC分类号： H02M7/48 , H02M7/5395
CPC分类号： H02M7/538
摘要： A PWM inverter output circuit enabling circuit integration, having a fast response characteristic, and unaffected by dv/dt transients is provided. A predrive circuit 17 drives a power circuit 11 comprising first and second power elements P1 and P2 by controlling the gate and source potential of the power elements P1 and P2 based on a stored control state. The control state is detected from a logic signal output from an input signal processor 13, which converts a command signal instructing turning on and off the power elements P1 and P2 to predetermined logic signals. Operating power is drawn from a main dc power source V1, a control power source V2, and a power supply capacitor C1 that is charged using an output voltage from the control power source V2. The gates and sources of the power elements P1 and P2 are connected together.
摘要翻译：提供具有快速响应特性并且不受dv / dt瞬变影响的PWM逆变器输出电路，使能电路集成。预驱动电路17通过基于存储的控制状态控制功率元件P1和P2的栅极和源极电位来驱动包括第一和第二功率元件P1和P2的电源电路11。从输入信号处理器13输出的逻辑信号中检测控制状态，该命令将指示将功率元件P1和P2导通和关闭的命令信号转换成预定的逻辑信号。从主DC电源V1，控制电源V2和使用来自控制电源V2的输出电压进行充电的电源电容器C1抽取工作电力。功率元件P1和P2的门和源连接在一起。

2. 发明授权

US07310213B2 Semiconductor device provided with overheat protection circuit and electronic circuit using the same 有权
标题翻译：具有过热保护电路的半导体装置及使用其的电子电路
公开(公告)号：US07310213B2
公开(公告)日：2007-12-18
申请号：US10948693
申请日：2004-09-24
申请人： Kouji Takada
发明人： Kouji Takada
IPC分类号： H02H5/04
CPC分类号： H03K17/0822 , H01L2924/0002 , H03K2017/0806 , H01L2924/00
摘要： A overheat protection circuit is formed on the same semiconductor substrate as a power MOS FET is formed on. As the configuration, a first resistor is connected between an input terminal and a gate of the power MOS FET, a second resistor, a temperature sensing element, and a third resistor are connected in this order between the input terminal and a ground point, an FET for clamp is connected in parallel to a series circuit of the temperature sensing element and the third resistor, a series circuit of an FET for current adjustment and a fourth resistor is connected in parallel to the MOS FET for clamp, a series circuit of a fifth and sixth resistors is connected between the input terminal and the ground point, a node of the fifth and sixth resistors is connected to a gate of the FET for current adjustment, an FET for switching is connected between the gate of the power MOS FET and the ground point, and a node of the temperature sensing element and the third resistor is connected to a gate of the FET for switching.
摘要翻译：在形成功率MOS FET的同一半导体衬底上形成过热保护电路。作为该结构，第一电阻器连接在功率MOS FET的输入端子和栅极之间，第二电阻器，温度感测元件和第三电阻器在输入端子和接地点之间依次连接，用于钳位的FET并联连接到温度感测元件和第三电阻器的串联电路，用于电流调节的FET的串联电路和第四电阻器并联连接到用于钳位的MOS FET，串联电路第五和第六电阻连接在输入端和接地点之间，第五和第六电阻的一个节点连接到用于电流调节的FET的栅极，用于开关的FET连接在功率MOS FET的栅极和接地点和温度感测元件的节点和第三电阻器连接到用于切换的FET的栅极。

3. 发明申请

US20050068707A1 Semiconductor device provided with overheat protection circuit and electronic circuit using the same 有权
标题翻译：具有过热保护电路的半导体装置及使用其的电子电路
公开(公告)号：US20050068707A1
公开(公告)日：2005-03-31
申请号：US10948693
申请日：2004-09-24
申请人： Kouji Takada
发明人： Kouji Takada
IPC分类号： H01L27/04 , H01L21/336 , H01L21/66 , H01L23/34 , H03K17/08 , H03K17/082 , H02H5/04
CPC分类号： H03K17/0822 , H01L2924/0002 , H03K2017/0806 , H01L2924/00
摘要： A overheat protection circuit is formed on the same semiconductor substrate as a power MOS FET is formed on. As the configuration, a first resistor is connected between an input terminal and a gate of the power MOS FET, a second resistor, a temperature sensing element, and a third resistor are connected in this order between the input terminal and a ground point, an FET for clamp is connected in parallel to a series circuit of the temperature sensing element and the third resistor, a series circuit of an FET for current adjustment and a fourth resistor is connected in parallel to the MOS FET for clamp, a series circuit of a fifth and sixth resistors is connected between the input terminal and the ground point, a node of the fifth and sixth resistors is connected to a gate of the FET for current adjustment, an FET for switching is connected between the gate of the power MOS FET and the ground point, and a node of the temperature sensing element and the third resistor is connected to a gate of the FET for switching.
摘要翻译：在形成功率MOS FET的同一半导体衬底上形成过热保护电路。作为该结构，第一电阻器连接在功率MOS FET的输入端子和栅极之间，第二电阻器，温度感测元件和第三电阻器在输入端子和接地点之间依次连接，用于钳位的FET并联连接到温度感测元件和第三电阻器的串联电路，用于电流调节的FET的串联电路和第四电阻器并联连接到用于钳位的MOS FET，串联电路第五和第六电阻连接在输入端和接地点之间，第五和第六电阻的一个节点连接到用于电流调节的FET的栅极，用于开关的FET连接在功率MOS FET的栅极和接地点和温度感测元件的节点和第三电阻器连接到用于切换的FET的栅极。

4. 发明授权

US06545515B2 Semiconductor switch having a voltage detection function 有权
公开(公告)号：US06545515B2
公开(公告)日：2003-04-08
申请号：US09904125
申请日：2001-07-12
申请人： Satoru Takahashi , Seiki Yamaguchi , Kouji Takada
发明人： Satoru Takahashi , Seiki Yamaguchi , Kouji Takada
IPC分类号： H03B100
CPC分类号： H03K17/0822
摘要： In a semiconductor switch, a voltage detection circuit is provided so as to be in parallel with a first switching element for turning on/off a power supply to a load, in which a voltage detection portion for detecting a drain voltage of the first switching element by dividing a voltage upon a resistance ratio or the like and a second switching element are connected in series to each other. The second switching element is turned on/off in accordance with ON/OFF of the first switching element. Accordingly, detection of a drain voltage is performed normally when the first switching element is in an ON state. When the first switching element is in an OFF state, a leakage current can be reduced by the second switching element.

5. 发明授权

US06335223B1 Method for producing a resin-sealed semiconductor device 有权
标题翻译：树脂密封型半导体装置的制造方法
公开(公告)号：US06335223B1
公开(公告)日：2002-01-01
申请号：US09339422
申请日：1999-06-24
申请人： Kouji Takada , Masami Yokozawa , Hiroyoshi Yoshida , Shigeki Sakaguchi
发明人： Kouji Takada , Masami Yokozawa , Hiroyoshi Yoshida , Shigeki Sakaguchi
IPC分类号： H01L2144
CPC分类号： H01L21/565 , H01L23/49541 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/451 , H01L2224/48091 , H01L2224/48247 , H01L2224/49171 , H01L2924/00014 , H01L2924/181 , H01L2924/00 , H01L2924/00015 , H01L2224/05599 , H01L2924/00012
摘要： A lead frame used for a resin-sealed semiconductor device includes a die-mount portion on which a semiconductor chip rests; and a plurality of leads arranged along a common portion of the lead frame. The plurality of leads include at least one adjusting lead, and the adjusting lead has a length that is less than the others of the plurality of leads such that a tip of the adjusting lead is sufficiently proximate to an outer peripheral surface of a resin-seal body to prevent resin flash during a formation of the semiconductor device and to allow the adjusting lead to be removed after the resin-seal body is formed over a portion of the lead frame.
摘要翻译：用于树脂密封半导体器件的引线框架包括半导体芯片所在的管芯安装部分; 以及沿引线框架的公共部分布置的多个引线。多个引线包括至少一个调节引线，并且调节引线的长度小于多个引线中的其他引线的长度，使得调节引线的尖端足够靠近树脂密封件的外周表面在树脂密封体形成在引线框架的一部分上之后，防止树脂在半导体器件形成过程中发生闪光并允许调整引线被去除。

6. 发明授权

US06538480B2 Load driving device 有权
标题翻译：负载驱动装置
公开(公告)号：US06538480B2
公开(公告)日：2003-03-25
申请号：US09946295
申请日：2001-09-04
申请人： Kouji Takada , Seiki Yamaguchi , Satoru Takahashi
发明人： Kouji Takada , Seiki Yamaguchi , Satoru Takahashi
IPC分类号： H03K300
CPC分类号： H03K17/0822 , H03K2017/0806
摘要： A load driving device capable of preventing thermal destruction even when a load short-circuit or an overcurrent occurs, thereby having improved reliability, is provided. A load driving device, in which a power switch element for driving a load and a circuit for controlling the power switch element according to a signal VIN supplied from the outside are formed on one chip, is provided with an OFF-time delaying circuit for delaying an OFF-time transition of a level of an input signal at which the power switch element makes the transition from an ON state to an OFF state, according to a result of detection of a current flowing through the load and the level of the input signal to the power switch element.
摘要翻译：提供即使在发生负载短路或过电流时也能够防止热破坏，从而提高可靠性的负载驱动装置。一个负载驱动装置，其中用于驱动负载的电源开关元件和用于根据从外部提供的信号VIN来控制功率开关元件的电路形成在一个芯片上，设置有用于延迟的关断时间延迟电路根据检测到流过负载的电流和输入信号的电平的结果，功率开关元件从导通状态转变到断开状态的输入信号的电平的关断时间转换到电源开关元件。

7. 发明授权

US06215174B1 Lead frame, mold for producing a resin-sealed semiconductor device, resin-sealed semiconductor device using such a lead frame 失效
标题翻译：引线框，用于制造树脂密封半导体器件的模具，使用这种引线框的树脂密封半导体器件
公开(公告)号：US06215174B1
公开(公告)日：2001-04-10
申请号：US09009232
申请日：1998-01-20
申请人： Kouji Takada , Masami Yokozawa , Hiroyoshi Yoshida , Shigeki Sakaguchi
发明人： Kouji Takada , Masami Yokozawa , Hiroyoshi Yoshida , Shigeki Sakaguchi
IPC分类号： H01L23495
CPC分类号： H01L21/565 , H01L23/49541 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/451 , H01L2224/48091 , H01L2224/48247 , H01L2224/49171 , H01L2924/00014 , H01L2924/181 , H01L2924/00 , H01L2924/00015 , H01L2224/05599 , H01L2924/00012
摘要： A lead frame used for a resin-sealed semiconductor device includes a die-mount portion on which a semiconductor chip rests; and a plurality of leads arranged along a common portion of the lead frame. The plurality of leads include at least one adjusting lead, and the adjusting lead has a length that is less than the others of the plurality of leads such that a tip of the adjusting lead is sufficiently proximate to an outer peripheral surface of a resin-seal body to prevent resin flash during a formation of the semiconductor device and to allow the adjusting lead to be removed after the resin-seal body is formed over a portion of the lead frame.
摘要翻译：用于树脂密封半导体器件的引线框架包括半导体芯片所在的管芯安装部分; 以及沿引线框架的公共部分布置的多个引线。多个引线包括至少一个调节引线，并且调节引线的长度小于多个引线中的其他引线的长度，使得调节引线的尖端足够靠近树脂密封件的外周表面在树脂密封体形成在引线框架的一部分上之后，防止树脂在半导体器件形成过程中发生闪光并允许调整引线被去除。

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