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    • 4. 发明申请
    • Semiconductor device and manufacturing method of the same
    • 半导体器件及其制造方法相同
    • US20060170004A1
    • 2006-08-03
    • US11339566
    • 2006-01-26
    • Hisashi ToyodaKouichi Arai
    • Hisashi ToyodaKouichi Arai
    • H01L31/109
    • H01L29/7322H01L29/0692H01L29/41708H01L29/42304
    • A bipolar transistor for communication apparatus having improved power gain and high frequency output characteristics is described. The bipolar transistor includes an outer base layer connecting an intrinsic base region with a base electrode, with a planar shape thereof being in a U form. The long sides of the collector electrode and an emitter electrode are disposed parallel to each other within a plane parallel to a main surface of a substrate, and plural collector electrodes and plural emitter electrodes are alternately arranged. On the other hand, the base electrode is set outside a line connecting the collector electrode and the emitter electrode at one end thereof, and the long side of the base electrode is so disposed as to intersect at right angles with the respectively long sides of the collector electrode and the emitter electrode.
    • 描述了具有改善的功率增益和高频输出特性的用于通信设备的双极晶体管。 双极晶体管包括将本征基极区域与基极连接的外部基极层,其平面形状为U形。 集电极和发射电极的长边在与基板的主面平行的平面内彼此平行地配置,并且交替配置多个集电极和多个发射极。 另一方面,基极在其一端设置在连接集电极和发射极的线的外侧,并且基极的长边被配置成与所述基极的长度方向成直角相交, 集电极和发射极。