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    • 1. 发明申请
    • PHOTODETECTING ELEMENT, PHOTODETECTING DEVICE, AND AUTO LIGHTING DEVICE
    • 光电保护元件,光电设备和自动照明设备
    • US20130038209A1
    • 2013-02-14
    • US13570233
    • 2012-08-08
    • Shunsuke AKASAKATetsuo FujiiKoki Sakamoto
    • Shunsuke AKASAKATetsuo FujiiKoki Sakamoto
    • H01L31/0232H05B37/02
    • G01J1/4204G01J1/0488G01J1/429H01L31/0203H01L31/0224H01L31/09
    • To provide both a photodetecting element and a photodetecting device which can prevent generating of a plurality of current paths, and can detect with stability and high sensitivity regardless of a surface state instability of an optical absorption layer. The photodetecting element includes an optically transparent substrate, an optical absorption layer, an electrode, an electrode, an adhesive layer, an insulating film, and a package. The optical absorption layer is formed on the optically transparent substrate, and a part of each the electrodes is embedded in the optical absorption layer. The photodetecting unit is bonded junction down with the adhesive layer on the package. The optical absorption layer absorbs light of a specified wavelength selectively to be converted into an electric signal. The light to be measured is irradiated from a back side surface of the optically transparent substrate.
    • 为了提供可以防止多个电流路径的产生的光检测元件和光电检测器件,并且不管光吸收层的表面状态不稳定,都能够以稳定性和高灵敏度进行检测。 光检测元件包括光学透明基板,光吸收层,电极,电极,粘合剂层,绝缘膜和封装。 光学吸收层形成在光学透明基板上,并且每个电极的一部分嵌入在光吸收层中。 光电检测单元与封装上的粘合剂层接合结合。 光吸收层选择性地吸收特定波长的光以转换成电信号。 从光学透明基板的背面侧照射被测光。
    • 3. 发明授权
    • Photodetection device
    • 光检测装置
    • US08610133B2
    • 2013-12-17
    • US13274289
    • 2011-10-14
    • Ken NakaharaShunsuke AkasakaKoki SakamotoTetsuo FujiiShunsuke FuruseSoichiro Arimura
    • Ken NakaharaShunsuke AkasakaKoki SakamotoTetsuo FujiiShunsuke FuruseSoichiro Arimura
    • H01L21/02
    • G02B5/208G01J1/1626G01J1/429G02B5/285
    • Two light receiving elements are formed on a support substrate. A first light receiving element is formed of a p-type layer, an n-type layer, a light absorption semiconductor layer, an anode electrode, a cathode electrode, a protection film, etc. A second light receiving element is formed of a p-type layer, an n-type layer, a transmissive film, an anode electrode, a cathode electrode, a protection film, etc. The light absorption semiconductor layer absorbs light in a wavelength range λ and disposed closer to the light receiving surface than is the pn junction region. The transmissive film has no light absorption range and disposed closer to the light receiving surface than is the pn junction region. The amount of light in the wavelength range λ is measured through computation using a detection signal from the first light receiving element and a detection signal from the second light receiving element.
    • 在支撑基板上形成两个光接收元件。 第一光接收元件由p型层,n型层,光吸收半导体层,阳极电极,阴极电极,保护膜等形成。第二光接收元件由p 型层,n型层,透射膜,阳极电极,阴极电极,保护膜等。光吸收半导体层吸收波长λ范围内的光,并且设置得比光接收表面更靠近光接收表面 pn结区域。 透射膜没有光吸收范围,并且比pn结区域更靠近光接收表面。 通过使用来自第一光接收元件的检测信号和来自第二光接收元件的检测信号的计算来测量波长范围λ的光量。