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1. 发明授权

US07943412B2 Low temperature Bi-CMOS compatible process for MEMS RF resonators and filters 失效
标题翻译：用于MEMS RF谐振器和滤波器的低温Bi-CMOS兼容工艺
公开(公告)号：US07943412B2
公开(公告)日：2011-05-17
申请号：US10316254
申请日：2002-12-10
申请人： Leena Paivikki Buchwalter , Kevin Kok Chan , Timothy Joseph Dalton , Christopher Vincent Jahnes , Jennifer Louise Lund , Kevin Shawn Petrarca , James Louis Speidell , James Francis Ziegler
发明人： Leena Paivikki Buchwalter , Kevin Kok Chan , Timothy Joseph Dalton , Christopher Vincent Jahnes , Jennifer Louise Lund , Kevin Shawn Petrarca , James Louis Speidell , James Francis Ziegler
IPC分类号： H01L21/00
CPC分类号： B81C1/00246 , B81B2201/0271 , B81C1/0023 , B81C2203/0735 , H03H3/0072 , H03H9/2405
摘要： A method of formation of a microelectromechanical system (MEMS) resonator or filter which is compatible with integration with any analog, digital, or mixed-signal integrated circuit (IC) process, after or concurrently with the formation of the metal interconnect layers in those processes, by virtue of its materials of composition, processing steps, and temperature of fabrication is presented. The MEMS resonator or filter incorporates a lower metal level, which forms the electrodes of the MEMS resonator or filter, that may be shared with any or none of the existing metal interconnect levels on the IC. It further incorporates a resonating member that is comprised of at least one metal layer for electrical connection and electrostatic actuation, and at least one dielectric layer for structural purposes. The gap between the electrodes and the resonating member is created by the deposition and subsequent removal of a sacrificial layer comprised of a carbon-based material. The method of removal of the sacrificial material is by an oxygen plasma or an anneal in an oxygen containing ambient. A method of vacuum encapsulation of the MEMS resonator or filter is provided through means of a cavity containing the MEMS device, filled with additional sacrificial material, and sealed. Access vias are created through the membrane sealing the cavity; the sacrificial material is removed as stated previously, and the vias are re-sealed in a vacuum coating process.
摘要翻译：一种形成微机电系统（MEMS）谐振器或滤波器的方法，其与在任何模拟，数字或混合信号集成电路（IC）工艺中的集成兼容，或者与这些工艺中的金属互连层的形成同时，由于其组成材料，加工步骤和制造温度。 MEMS谐振器或滤波器包含形成MEMS谐振器或滤波器的电极的较低金属电平，其可与IC上的现有金属互连电平中的任何一个或任何一个共享。它还包括谐振元件，该谐振元件由用于电连接和静电驱动的至少一个金属层和至少一个用于结构目的的电介质层组成。通过沉积并随后去除由碳基材料构成的牺牲层来产生电极和谐振构件之间的间隙。去除牺牲材料的方法是通过氧等离子体或在含氧环境中的退火。 MEMS谐振器或滤波器的真空封装方法是通过一个包含MEMS器件的空腔的装置提供的，其中填充有额外的牺牲材料并被密封。通过隔膜密封腔形成通孔; 如先前所述去除牺牲材料，并且在真空涂覆工艺中重新密封通孔。

2. 发明申请

US20080248635A1 Polycrystalline SiGe Junctions for Advanced Devices 有权
标题翻译：高级设备的多晶SiGe接头
公开(公告)号：US20080248635A1
公开(公告)日：2008-10-09
申请号：US12118776
申请日：2008-05-12
申请人： Kevin Kok Chan , Rober J. Miller , Erin C. Jones , Atul Ajmera
发明人： Kevin Kok Chan , Rober J. Miller , Erin C. Jones , Atul Ajmera
IPC分类号： H01L21/225
CPC分类号： H01L29/0843 , H01L21/02203 , H01L21/02271 , H01L21/0245 , H01L21/02488 , H01L21/02507 , H01L21/02513 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/2252 , H01L21/31695 , H01L29/165 , H01L29/66636 , H01L29/78
摘要： A structure and method of fabrication for MOSFET devices with a polycrystalline SiGe junction is disclosed. Ge is selectively grown on Si while Si is selectively grown on Ge. Alternating depositions of Ge and Si layers yield the SiGe junction. The deposited layers are doped, and subsequently the dopants outdiffused into the device body. A thin porous oxide layer between the polycrystalline Ge and Si layers enhances the isotropy of the SiGe junctions.
摘要翻译：公开了一种具有多晶SiGe结的MOSFET器件的制造结构和方法。 Ge选择性地生长在Si上，而Si选择性地生长在Ge上。 Ge和Si层的交替沉积产生SiGe结。沉积的层被掺杂，随后掺杂物扩散到器件本体中。多晶Ge层和Si层之间的薄多孔氧化层增强了SiGe结的各向同性。

3. 发明申请

US20060007274A1 Printing ink delivery control mechanism 失效
公开(公告)号：US20060007274A1
公开(公告)日：2006-01-12
申请号：US10888418
申请日：2004-07-09
申请人： Pui Huang , Seng Koh , Kok Chan , Wee Tan
发明人： Pui Huang , Seng Koh , Kok Chan , Wee Tan
IPC分类号： B41J2/17
CPC分类号： B41J2/175 , B41J2/17596 , B41J23/025
摘要： An embodiment of the invention provides a mechanism for controlling at least one ink transmission module, which controls a supply of ink using received control rotation. The mechanism includes an input, to receive control rotation. The mechanism also includes an output, to selectively transfer the control rotation to the ink transmission module. A control system is also provided to control the selective transfer of the output. The mechanism is moveable into a disengaged configuration by the control system, in which the output does not transfer rotation of the input to the ink transmission module, by a first predetermined sequence of rotations of the input, and into an engaged configuration, in which the output transfers rotation of the input to the ink transmission module, by a second predetermined sequence of rotations of the input.

4. 发明申请

US20050223216A1 Method and system for recovering password protected private data via a communication network without exposing the private data 有权
标题翻译：用于通过通信网络恢复密码保护的私有数据而不暴露私人数据的方法和系统
公开(公告)号：US20050223216A1
公开(公告)日：2005-10-06
申请号：US10816756
申请日：2004-04-02
申请人： Kok Chan , Dafina Toncheva , Baskaran Dharmarajan , Rahul Newaskar , Adam Back
发明人： Kok Chan , Dafina Toncheva , Baskaran Dharmarajan , Rahul Newaskar , Adam Back
IPC分类号： H04L9/08 , H04L29/06 , H04L9/00
CPC分类号： H04L63/0442 , H04L63/083 , Y10S707/99953 , Y10S707/99955
摘要： A system and method for securely roaming private data from a first client computer to a second client computer linked via a communication network. A user of the first client computer executes a home client application and designates private data for roaming. The home client application generates a first key in response to a password, and encrypts the designated private data as a function of the first key. The server receives and stores the encrypted private data. A user of the second computer executes a roaming client application and requests transfer of the encrypted private data from the server. The roaming client application generates the first key in response to the password, and decrypts encrypted private data transferred from the server to obtain the private data. The invention further provides users the ability to retrieve encrypted private from the server even when the user cannot remember the password associated with the first key. Also, the server has no knowledge of the private data nor the keys.
摘要翻译：一种用于将私有数据从第一客户端计算机安全地漫游到通过通信网络链接的第二客户端计算机的系统和方法。第一客户端计算机的用户执行家庭客户端应用并指定用于漫游的专用数据。家庭客户端应用程序响应于密码生成第一密钥，并且根据第一密钥加密指定的专用数据。服务器接收并存储加密的私有数据。第二计算机的用户执行漫游客户端应用，并请求从服务器传送加密的专用数据。漫游客户端应用程序响应于密码生成第一个密钥，并解密从服务器传输的加密私有数据，以获得私有数据。本发明进一步向用户提供即使当用户不能记住与第一密钥相关联的密码时从服务器检索加密的私有的能力。此外，服务器不知道私人数据和密钥。

5. 发明申请

US20050222891A1 Method and system for expansion of recurring calendar events 审中-公开
标题翻译：扩展日历事件的方法和系统
公开(公告)号：US20050222891A1
公开(公告)日：2005-10-06
申请号：US11135816
申请日：2005-05-24
申请人： Kok Chan , Dennis Kiilerich
发明人： Kok Chan , Dennis Kiilerich
IPC分类号： G06Q10/06 , G06Q10/10 , G06Q50/22 , G06F17/60
CPC分类号： G06Q10/109 , G06Q10/06314 , G06Q50/22 , Y10S707/99931 , Y10S707/99942 , Y10S707/99953
摘要： A system and method for expanding recurring calendar events such that the retrieval of recurring calendar appointments is expedited. A recurring appointment is saved as a data structure including a recurrence pattern. When a recurring appointment is saved by a client that has sufficient processing and memory resources to perform the computations necessary to expand recurring appointments (i.e., a thick client), a background thread is notified. The background thread increases its priority to normal when idle processing capacity is available and calls a routine requesting calendar information for a defined time period. The routine causes the expansion of the data structure into the individual instances of the recurring appointment for a defined time period, and the individual instances are saved for later retrieval. A later query from a client without sufficient processing and memory resources to perform the calculations necessary to expand recurring appointments (i.e., a thin client), therefore, does not require that the expansion computations be performed contemporaneously.
摘要翻译：一种用于扩展循环日历事件的系统和方法，从而加快对定期日历约会的检索。定期约会保存为包括重复模式的数据结构。当具有足够的处理和内存资源的客户端保存定期约会以执行扩展循环约会所必需的计算（即厚客户端）时，通知后台线程。当空闲处理能力可用时，后台线程将其优先级增加到正常，并调用在定义的时间段内请求日历信息的例程。该例程导致在定义的时间段内将数据结构扩展到循环约会的各个实例中，并且保存各个实例供以后检索。因此，没有足够的处理和内存资源来进行扩展循环约会所需的计算（即，瘦客户机）的后续查询不需要同时执行扩展计算。

6. 发明申请

US20120270351A1 LOW TEMPERATURE BI-CMOS COMPATIBLE PROCESS FOR MEMS RF RESONATORS AND FILTERS 审中-公开
标题翻译：用于MEMS RF谐振器和滤波器的低温BI-CMOS兼容工艺
公开(公告)号：US20120270351A1
公开(公告)日：2012-10-25
申请号：US13540101
申请日：2012-07-02
申请人： Leena Paivikki BUCHWALTER , Kevin Kok CHAN , Timothy Joseph DALTON , Christopher Vincent JAHNES , Jennifer Louise LUND , Kevin Shawn PETRARCA , James Louis SPEIDELL , James Francis ZIEGLER
发明人： Leena Paivikki BUCHWALTER , Kevin Kok CHAN , Timothy Joseph DALTON , Christopher Vincent JAHNES , Jennifer Louise LUND , Kevin Shawn PETRARCA , James Louis SPEIDELL , James Francis ZIEGLER
IPC分类号： H01L21/02
CPC分类号： B81C1/00246 , B81B2201/0271 , B81C1/0023 , B81C2203/0735 , H03H3/0072 , H03H9/2405
摘要： A method of removal of a first and second sacrificial layer wherein an O2 plasma or an O2-containing environment is introduced to a cavity and a gap region through a plurality of via holes in a cavity capping material.
摘要翻译：一种去除第一和第二牺牲层的方法，其中将O 2等离子体或含O 2的环境通过空腔封盖材料中的多个通孔引入空腔和间隙区域。

7. 发明授权

US07169674B2 Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier 有权
标题翻译：具有高介电常数栅极电介质和集成扩散势垒的互补金属氧化物半导体（CMOS）栅极叠层
公开(公告)号：US07169674B2
公开(公告)日：2007-01-30
申请号：US11066762
申请日：2005-02-28
申请人： Nestor Alexander Bojarczuk, Jr. , Kevin Kok Chan , Christopher Peter D'Emic , Evgeni Gousev , Supratik Guha , Paul C. Jamison , Lars-Ake Ragnarsson
发明人： Nestor Alexander Bojarczuk, Jr. , Kevin Kok Chan , Christopher Peter D'Emic , Evgeni Gousev , Supratik Guha , Paul C. Jamison , Lars-Ake Ragnarsson
IPC分类号： H01L21/8236 , H01L21/8222 , H01L21/335 , H01L21/8234 , H01L21/336 , H01L21/331
CPC分类号： H01L29/513 , H01L21/28194
摘要： A diffusion barrier (and method for forming the diffusion barrier) for a field-effect transistor having a channel region and a gate electrode, includes an insulating material being disposed over the channel region. The insulating material includes nitrogen (N), and is disposed under the gate electrode. The insulating material can be provided either as a layer or distributed within a gate dielectric material disposed under the gate electrode.
摘要翻译：用于具有沟道区和栅电极的场效应晶体管的扩散势垒（和形成扩散势垒的方法）包括设置在沟道区上的绝缘材料。绝缘材料包括氮（N），并且设置在栅电极下方。绝缘材料可以设置为层或分布在设置在栅电极下方的栅极电介质材料内。

8. 发明授权

US06716708B2 Self-aligned silicide process utilizing ion implants for reduced silicon consumption and control of the silicide formation temperature and structure formed thereby 有权
标题翻译：自对准硅化物工艺利用离子植入物降低硅消耗，并控制硅化物形成温度和由此形成的结构
公开(公告)号：US06716708B2
公开(公告)日：2004-04-06
申请号：US10299688
申请日：2002-11-20
申请人： Cyril Cabral, Jr. , Kevin Kok Chan , Guy Moshe Cohen , Kathryn Wilder Guarini , Christian Lavoie , Ronnen Andrew Roy , Paul Michael Solomon
发明人： Cyril Cabral, Jr. , Kevin Kok Chan , Guy Moshe Cohen , Kathryn Wilder Guarini , Christian Lavoie , Ronnen Andrew Roy , Paul Michael Solomon
IPC分类号： H01L21336
CPC分类号： H01L29/665 , H01L21/26506 , H01L21/28052 , H01L21/28518 , H01L21/28525 , H01L29/41783
摘要： A method (and resultant structure) for forming a metal silicide contact on a silicon-containing region having controlled consumption of said silicon-containing region, includes implanting Ge into the silicon-containing region, forming a blanket metal-silicon mixture layer over the silicon-containing region, reacting the metal-silicon mixture with silicon at a first temperature to form a metal silicon alloy, etching unreacted portions of the metal-silicon mixture layer, forming a blanket silicon layer over the metal silicon alloy layer, annealing at a second temperature to form an alloy of metal-Si2, and selectively etching the unreacted silicon layer.
摘要翻译：一种用于在具有所述含硅区域的受控消耗的含硅区域上形成金属硅化物接触的方法（和所得结构）包括将Ge注入含硅区域中，在硅上形成覆盖的金属 - 硅混合物层在第一温度下使金属硅混合物与硅反应以形成金属硅合金，蚀刻金属 - 硅混合物层的未反应部分，在金属硅合金层上形成覆盖硅层，在第二温度下退火温度以形成金属-Si2的合金，并且选择性地蚀刻未反应的硅层。

9. 发明申请

US20110109405A1 Low Temperature BI-CMOS Compatible Process For MEMS RF Resonators and Filters 失效
标题翻译：用于MEMS射频谐振器和滤波器的低温BI-CMOS兼容工艺
公开(公告)号：US20110109405A1
公开(公告)日：2011-05-12
申请号：US13007130
申请日：2011-01-14
申请人： Leena Paivikki Buchwalter , Kevin Kok Chan , Timothy Joseph Dalton , Christopher Vincent Jahnes , Jennifer Louise Lund , Kevin Shawn Petrarca , James Louis Speidell , James Francis Ziegler
发明人： Leena Paivikki Buchwalter , Kevin Kok Chan , Timothy Joseph Dalton , Christopher Vincent Jahnes , Jennifer Louise Lund , Kevin Shawn Petrarca , James Louis Speidell , James Francis Ziegler
IPC分类号： H03H9/24
CPC分类号： B81C1/00246 , B81B2201/0271 , B81C1/0023 , B81C2203/0735 , H03H3/0072 , H03H9/2405
摘要： A microelectromechanical system (MEMS) resonator or filter including a first conductive layer, one or more electrodes patterned in the first conductive layer which serve the function of signal input, signal output, or DC biasing, or some combination of these functions, an evacuated cavity, a resonating member comprised of a lower conductive layer and an upper structural layer, a first air gap between the resonating member and one or more of the electrodes, an upper membrane covering the cavity, and a second air gap between the resonating member and the upper membrane.
摘要翻译：一种微机电系统（MEMS）谐振器或滤波器，其包括第一导电层，在第一导电层中图案化的一个或多个电极，其用于信号输入，信号输出或DC偏置的功能，或这些功能的某些组合;抽真空腔，由下导电层和上结构层构成的谐振构件，在谐振构件和一个或多个电极之间的第一气隙，覆盖空腔的上膜，以及谐振构件和第二气隙之间的第二气隙上膜。

10. 发明授权

US06987050B2 Self-aligned silicide (salicide) process for low resistivity contacts to thin film silicon-on-insulator and bulk MOSFETS and for shallow junctions 失效
标题翻译：自对准硅化物（自对准硅化物）工艺，用于低电阻接触薄膜绝缘体上硅和体MOSFET以及浅结
公开(公告)号：US06987050B2
公开(公告)日：2006-01-17
申请号：US09902483
申请日：2001-07-11
申请人： Cyril Cabral, Jr. , Kevin Kok Chan , Guy Moshe Cohen , Christian Lavoie , Ronnen Andrew Roy , Paul Michael Solomon
发明人： Cyril Cabral, Jr. , Kevin Kok Chan , Guy Moshe Cohen , Christian Lavoie , Ronnen Andrew Roy , Paul Michael Solomon
IPC分类号： H01L21/331 , H01L21/336 , H01L21/3205 , H01L21/4763 , H01L21/44
CPC分类号： H01L29/66772 , H01L21/28518 , H01L29/458 , H01L29/4908 , H01L29/665 , H01L29/78
摘要： A method (and resulting structure) for fabricating a silicide for a semiconductor device, includes depositing a metal or an alloy thereof on a silicon substrate, reacting the metal or the alloy to form a first silicide phase, etching any unreacted metal, depositing a silicon cap layer over the first silicide phase, reacting the silicon cap layer to form a second silicide phase, for the semiconductor device, and etching any unreacted silicon. The substrate can be either a silicon-on-insulator (SOI) substrate or a bulk silicon substrate.
摘要翻译：一种用于制造半导体器件用硅化物的方法（及其结构）包括在硅衬底上沉积金属或其合金，使金属或合金反应形成第一硅化物相，蚀刻任何未反应的金属，沉积硅在第一硅化物相上，使硅帽层反应形成第二硅化物相，并且蚀刻任何未反应的硅。衬底可以是绝缘体上硅（SOI）衬底或体硅衬底。

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