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1. 发明申请

US20120309131A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120309131A1
公开(公告)日：2012-12-06
申请号：US13572512
申请日：2012-08-10
申请人： KOJI BANDO , KAZUYUKI MISUMI , TATSUHIKO AKIYAMA , NAOKI IZUMI , AKIRA YAMAZAKI
发明人： KOJI BANDO , KAZUYUKI MISUMI , TATSUHIKO AKIYAMA , NAOKI IZUMI , AKIRA YAMAZAKI
IPC分类号： H01L21/56
CPC分类号： H01L23/49503 , G11C11/16 , H01L23/552 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L27/228 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/4824 , H01L2224/48247 , H01L2224/48257 , H01L2224/4826 , H01L2224/73265 , H01L2224/92247 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/0102 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/01042 , H01L2924/01046 , H01L2924/01061 , H01L2924/01064 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/1306 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/3025 , H01L2924/00 , H01L2924/01026 , H01L2924/01028 , H01L2924/3512 , H01L2224/05599 , H01L2924/00012
摘要： To provide a technique that can improve the data retention characteristic of an MRAM device by improving the resistance against an external magnetic field in a semiconductor device including the MRAM device.A first magnetic shield material is disposed over a die pad via a first die attach film. Then, a semiconductor chip is mounted over the first magnetic shield material via a second die attach film. Furthermore, a second magnetic shield material is disposed over the semiconductor chip via a third die attach film. That is, the semiconductor chip is disposed so as to be sandwiched by the first magnetic shield material and the second magnetic shield material. At this time, while the planar area of the second magnetic shield material is smaller than that of the first magnetic shield material, the thickness of the second magnetic shield material is thicker than that of the first magnetic shield material.
摘要翻译：提供一种通过提高包括MRAM器件的半导体器件中的外部磁场的电阻来提高MRAM器件的数据保持特性的技术。第一磁屏蔽材料经由第一管芯附着膜设置在管芯焊盘上。然后，半导体芯片通过第二芯片附着膜安装在第一磁屏蔽材料上。此外，第二磁屏蔽材料通过第三芯片附着膜设置在半导体芯片的上方。也就是说，半导体芯片被布置成被第一磁屏蔽材料和第二磁屏蔽材料夹在中间。此时，当第二磁屏蔽材料的平面区域小于第一磁屏蔽材料的平面区域时，第二磁屏蔽材料的厚度比第一磁屏蔽材料的厚度厚。

2. 发明授权

US07763406B2 Electrophotographic photoreceptor, process cartidge and electrophotographic apparatus 有权
标题翻译：电子照相感光体，工艺盒和电子照相设备
公开(公告)号：US07763406B2
公开(公告)日：2010-07-27
申请号：US11081650
申请日：2005-03-17
申请人： Hidemi Nukada , Hirofumi Nakamura , Yu Qi , Nan-Xing Hu , Ah-Mee Hor , Koji Bando
发明人： Hidemi Nukada , Hirofumi Nakamura , Yu Qi , Nan-Xing Hu , Ah-Mee Hor , Koji Bando
IPC分类号： G03G5/047 , G03G5/14
CPC分类号： G03G5/144 , G03G5/0696 , G03G5/142
摘要： An electrophotographic photoreceptor has at least an undercoat layer and a photosensitive layer formed on a conductive substrate, wherein the undercoat layer contains metal oxide fine particles and an electron acceptor compound having a group reactive with the metal oxide fine particles. A process cartridge and an electrophotographic apparatus use the electrophotographic photoreceptor.
摘要翻译：电子照相感光体至少具有底涂层和形成在导电性基材上的感光层，其中底涂层含有金属氧化物微粒和具有与金属氧化物微粒反应的基团的电子受体化合物。处理盒和电照相设备使用电子照相感光体。

3. 发明授权

US07580655B2 Charging roller, electrophotographic process cartridge, and image forming apparatus 有权
标题翻译：充电辊，电子照相处理盒和成像设备
公开(公告)号：US07580655B2
公开(公告)日：2009-08-25
申请号：US11798745
申请日：2007-05-16
申请人： Hidemi Nukada , Shigeto Hashiba , Takahiro Suzuki , Koji Bando , Makoto Takemoto
发明人： Hidemi Nukada , Shigeto Hashiba , Takahiro Suzuki , Koji Bando , Makoto Takemoto
IPC分类号： G03G15/02
CPC分类号： G03G15/0233
摘要： A charging roller including: a support; an elastic layer provided on the outer peripheral surface of the support, and having a ground-finished outer peripheral surface; and a surface layer formed to cover the outer peripheral surface of the elastic layer and that has a thickness of about 2 μm to about 10 μm from the outer peripheral surface of the elastic layer, and a proportion of water absorbed in the total of the elastic layer and the surface layer, after storage for 48 hours in an environment having a temperature of 10° C. and a humidity of 15% RH, and after storage for 48 hours in an environment having a temperature of 28° C. and a humidity of 85% RH, being about 2% to about 8% by weight, being about 2% to about 8% by weight.
摘要翻译：一种充电辊，包括：支撑件; 弹性层，其设置在所述支撑体的外周面上，并且具有研磨后的外周面; 以及表面层，其形成为覆盖弹性层的外周表面，并且具有从弹性层的外周表面约2μm至约10μm的厚度，以及在弹性层的总共中吸收的水的比例在温度为10℃，湿度为15％RH的环境中保存48小时后，在温度为28℃，湿度为28℃的环境中保存48小时后，约85％RH，约2％至约8％重量，约2％至约8％重量。

4. 发明授权

US07009304B2 Resin-sealed semiconductor device 失效
公开(公告)号：US07009304B2
公开(公告)日：2006-03-07
申请号：US10981472
申请日：2004-11-05
申请人： Koji Bando , Hideki Ishii
发明人： Koji Bando , Hideki Ishii
IPC分类号： H01L29/40
CPC分类号： H01L24/49 , H01L23/3107 , H01L23/49551 , H01L23/49575 , H01L24/48 , H01L24/73 , H01L2224/32145 , H01L2224/32245 , H01L2224/48091 , H01L2224/48095 , H01L2224/48247 , H01L2224/48465 , H01L2224/4847 , H01L2224/48471 , H01L2224/4945 , H01L2224/73265 , H01L2224/85191 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/07802 , H01L2924/1532 , H01L2924/181 , H01L2924/18165 , H01L2924/00 , H01L2924/00012 , H01L2224/48227 , H01L2224/45099 , H01L2224/05599
摘要： A resin-sealed semiconductor device has a first semiconductor chip whose circuit surface is bonded to a surface of a die pad. The back surface of a second semiconductor chip is bonded to the back surface of the first semiconductor chip. Each of the semiconductor chips is connected by wire to outer lead respectively. A sealing resin is provided for encapsulating the die pad, the first and second semiconductor chips and the wires so that the other surface of the die pad is exposed.

5. 发明授权

US06773857B2 Electrophotographic photoreceptor, processes for producing the same, process cartridge, and electrophotographic apparatus 失效
标题翻译：电子照相感光体，其制造方法，处理盒和电子照相设备
公开(公告)号：US06773857B2
公开(公告)日：2004-08-10
申请号：US10265783
申请日：2002-10-08
申请人： Hirofumi Nakamura , Ichiro Takegawa , Hidemi Nukada , Masahiro Iwasaki , Michiko Aida , Yukiko Kamijo , Masahiko Miyamoto , Tetsuya Ezumi , Takashi Yamada , Koji Bando , Taketoshi Hoshizaki
发明人： Hirofumi Nakamura , Ichiro Takegawa , Hidemi Nukada , Masahiro Iwasaki , Michiko Aida , Yukiko Kamijo , Masahiko Miyamoto , Tetsuya Ezumi , Takashi Yamada , Koji Bando , Taketoshi Hoshizaki
IPC分类号： G03G1504
CPC分类号： G03G5/142 , G03G5/14
摘要： An electrophotographic photoreceptor having, between an electroconductive substrate and a photosensitive layer, an interlayer which contains fine metal oxide particles and a binder resin and which, when an electric field of 106 V/m is applied thereto at 28° C. and 85% RH, has a volume resistivity of from 108 to 1013 &OHgr;·cm and, when an electric field of 106 V/m is applied thereto at 15° C. and 15% RH, has a volume resistivity which is up to 500 times the volume resistivity thereof as measured when an electric field of 106 V/m is applied thereto at 28° C. and 85% RH.
摘要翻译：一种电子照相感光体，其在导电性基材和感光层之间具有含有金属氧化物微粒和粘合剂树脂的中间层，并且当在28℃下施加10 6 V / m的电场时， 85％RH，体积电阻率为10 8至10 13Ω·cm，当在15℃和15％RH下施加10 6 V / m的电场时，具有当在28℃和85％RH下施加10 6 V / m的电场时，体积电阻率高达其体积电阻率的500倍。

6. 发明授权

US06730855B2 Electronic element 失效
标题翻译：电子元件
公开(公告)号：US06730855B2
公开(公告)日：2004-05-04
申请号：US10345995
申请日：2003-01-17
申请人： Koji Bando
发明人： Koji Bando
IPC分类号： H05K706
CPC分类号： H01L23/4985 , H01L23/49805 , H01L24/48 , H01L25/105 , H01L2224/05599 , H01L2224/45099 , H01L2224/48091 , H01L2224/4824 , H01L2224/48465 , H01L2224/85399 , H01L2225/1005 , H01L2225/1023 , H01L2225/1041 , H01L2225/1058 , H01L2924/00014 , H01L2924/181 , H01L2924/19041 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： An wiring board is provided so as to wrap a semiconductor chip, and on the outer surface of wiring board, a plurality of external terminals are provided three-dimensionally, i.e., on the upper, lateral and bottom sides. External terminals are connected to an electrode area of the wiring pattern provided to wiring board for electrically connecting to an external element. According to this configuration, a structure of an electronic element enabling free arrangement of an electronic device addressing various designs of the final products, and an electronic device using the electronic element can be provided.
摘要翻译：以覆盖半导体芯片的方式设置布线板，并且在布线板的外表面上，三维地设置多个外部端子，即在上侧，左右两侧。外部端子连接到设置到电连接到外部元件的布线板的布线图案的电极区域。根据该结构，可以提供能够自由配置解决最终产品的各种设计的电子设备的电子元件的结构，以及使用该电子元件的电子设备。

7. 发明授权

US5252422A Method for preparing an electrophotographic photoreceptor 失效
标题翻译：电子照相感光体的制备方法
公开(公告)号：US5252422A
公开(公告)日：1993-10-12
申请号：US829618
申请日：1992-01-31
申请人： Sadao Okano , Takahiro Suzuki , Masanori Murase , Koji Bando , Seiji Ashiya
发明人： Sadao Okano , Takahiro Suzuki , Masanori Murase , Koji Bando , Seiji Ashiya
IPC分类号： G03G5/14
CPC分类号： G03G5/142
摘要： A novel method for preparing an electrophotographic photoreceptor is disclosed, which comprises laminating a charge generating layer and a charge transporting layer in this order on an electrically conductive substrate via an undercoating layer, wherein the coating solution for said undercoating layer contains an alkoxide coupling agent represented by formula (I), an aliphatic alcohol solvent containing at least the same number of carbon atoms as in the alkoxy group in said alkoxide coupling agent, and at least one compound selected from the group consisting of aromatic solvents, ethylene glycols and propylene glycols:X.sub.m --m--(OR.sub.1).sub.N (I)wherein R.sub.1 represents an alkyl group having 1 to 5 carbon atoms; M represents Si, Ti, Zr or Al; X represents an organic group; m represents an integer of 0, 1 or 2; and n represents an integer of 1 to 4, provided that when M is Si, Ti or Zr, n is an integer of 1 to 4 and m is an integer of (4-n) and when M is Al, n is an integer of 1 to 3 and m is an integer of (3-n).
摘要翻译：公开了一种用于制备电子照相感光体的新方法，其包括依次层叠电荷产生层和电荷输送层，其中所述底涂层的涂布溶液含有表示为烷氧基的偶联剂通式（I）表示的烷氧基化合物中含有至少相同数目的碳原子的脂族醇溶剂和选自芳族溶剂，乙二醇和丙二醇中的至少一种化合物： Xm-m-（OR1）N（I）其中R1表示具有1至5个碳原子的烷基; M表示Si，Ti，Zr或Al; X表示有机基团; m表示0,1或2的整数; n表示1〜4的整数，条件是当M为Si，Ti或Zr时，n为1〜4的整数，m为（4-n）的整数，当M为Al时，n为整数为1〜3，m为（3-n）的整数。

8. 发明授权

US08652880B2 Semiconductor device and method of manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08652880B2
公开(公告)日：2014-02-18
申请号：US13572512
申请日：2012-08-10
申请人： Koji Bando , Kazuyuki Misumi , Tatsuhiko Akiyama , Naoki Izumi , Akira Yamazaki
发明人： Koji Bando , Kazuyuki Misumi , Tatsuhiko Akiyama , Naoki Izumi , Akira Yamazaki
IPC分类号： H01L21/56
CPC分类号： H01L23/49503 , G11C11/16 , H01L23/552 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L27/228 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/4824 , H01L2224/48247 , H01L2224/48257 , H01L2224/4826 , H01L2224/73265 , H01L2224/92247 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/0102 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/01042 , H01L2924/01046 , H01L2924/01061 , H01L2924/01064 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/1306 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/3025 , H01L2924/00 , H01L2924/01026 , H01L2924/01028 , H01L2924/3512 , H01L2224/05599 , H01L2924/00012
摘要： To provide a technique that can improve the data retention characteristic of an MRAM device by improving the resistance against an external magnetic field in a semiconductor device including the MRAM device. A first magnetic shield material is disposed over a die pad via a first die attach film. Then, a semiconductor chip is mounted over the first magnetic shield material via a second die attach film. Furthermore, a second magnetic shield material is disposed over the semiconductor chip via a third die attach film. That is, the semiconductor chip is disposed so as to be sandwiched by the first magnetic shield material and the second magnetic shield material. At this time, while the planar area of the second magnetic shield material is smaller than that of the first magnetic shield material, the thickness of the second magnetic shield material is thicker than that of the first magnetic shield material.
摘要翻译：提供一种通过提高包括MRAM器件的半导体器件中的外部磁场的电阻来提高MRAM器件的数据保持特性的技术。第一磁屏蔽材料经由第一管芯附着膜设置在管芯焊盘上。然后，半导体芯片通过第二芯片附着膜安装在第一磁屏蔽材料上。此外，第二磁屏蔽材料通过第三芯片附着膜设置在半导体芯片的上方。也就是说，半导体芯片被布置成被第一磁屏蔽材料和第二磁屏蔽材料夹在中间。此时，当第二磁屏蔽材料的平面区域小于第一磁屏蔽材料的平面区域时，第二磁屏蔽材料的厚度比第一磁屏蔽材料的厚度厚。

9. 发明申请

US20110171570A1 ELECTROPHOTOGRAPHIC PHOTORECEPTOR, METHOD OF PRODUCING SAME, PROCESS CARTRIDGE, AND IMAGE FORMING APPARATUS 审中-公开
标题翻译：电子照相机，其制造方法，工艺盒和图像形成装置
公开(公告)号：US20110171570A1
公开(公告)日：2011-07-14
申请号：US12860406
申请日：2010-08-20
申请人： Hitoshi TAKIMOTO , Masahiro Iwasaki , Daisuke Haruyama , Hidemi Nukada , Mitsuhide Nakamura , Koji Bando
发明人： Hitoshi TAKIMOTO , Masahiro Iwasaki , Daisuke Haruyama , Hidemi Nukada , Mitsuhide Nakamura , Koji Bando
IPC分类号： G03G15/00 , G03G21/18
CPC分类号： G03G5/14791 , G03G5/0539 , G03G5/0575 , G03G5/0614 , G03G5/076 , G03G5/14726 , G03G5/14747 , G03G5/14769 , G03G5/14786
摘要： The invention provides an electrophotographic photoreceptor having at least: a substrate; a photosensitive layer provided on the substrate; and an overcoat layer provided on the photosensitive layer. The overcoat layer of the photoreceptor includes at least: a cross-linked component that is obtained by cross-linking of at least one selected from a guanamine compound or a melamine compound and a charge-transporting material having at least one substituent group selected from —OH, —OCH3, —NH2, —SH, or —COOH; fluoro-resin particles; and a fluoro-alkyl group-containing copolymer. The ratio of fluorine atom present in an outermost surface of the overcoat layer as measured with energy dispersive X-ray analysis (EDS) is from approximately 1.0% by mass to approximately 20.0% by mass. The invention further provides a process cartridge, an image forming apparatus, and a method of producing the electrophotographic photoreceptor.
摘要翻译：本发明提供一种至少具有：基材的电子照相感光体; 设置在基板上的感光层; 以及设置在感光层上的外涂层。感光体的外涂层至少包括：通过交联选自胍胺化合物或三聚氰胺化合物中的至少一种和具有至少一个选自以下的取代基的电荷输送材料获得的交联成分： OH，-OCH 3，-NH 2，-SH或-COOH; 氟树脂颗粒; 和含氟烷基的共聚物。用能量色散X射线分析（EDS）测定的外涂层的最表面存在的氟原子的比例为约1.0质量％〜约20.0质量％。本发明还提供一种处理盒，图像形成装置和制造电子照相感光体的方法。

10. 发明申请

US20100164077A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100164077A1
公开(公告)日：2010-07-01
申请号：US12647445
申请日：2009-12-26
申请人： Koji Bando , Kazuyuki Misumi , Tatsuhiko Akiyama , Naoki Izumi , Akira Yamazaki
发明人： Koji Bando , Kazuyuki Misumi , Tatsuhiko Akiyama , Naoki Izumi , Akira Yamazaki
IPC分类号： H01L23/552 , H01L21/50
CPC分类号： H01L23/49503 , G11C11/16 , H01L23/552 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L27/228 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/4824 , H01L2224/48247 , H01L2224/48257 , H01L2224/4826 , H01L2224/73265 , H01L2224/92247 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/0102 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/01042 , H01L2924/01046 , H01L2924/01061 , H01L2924/01064 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/1306 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/3025 , H01L2924/00 , H01L2924/01026 , H01L2924/01028 , H01L2924/3512 , H01L2224/05599 , H01L2924/00012
摘要： To provide a technique that can improve the data retention characteristic of an MRAM device by improving the resistance against an external magnetic field in a semiconductor device including the MRAM device.A first magnetic shield material is disposed over a die pad via a first die attach film. Then, a semiconductor chip is mounted over the first magnetic shield material via a second die attach film. Furthermore, a second magnetic shield material is disposed over the semiconductor chip via a third die attach film. That is, the semiconductor chip is disposed so as to be sandwiched by the first magnetic shield material and the second magnetic shield material. At this time, while the planar area of the second magnetic shield material is smaller than that of the first magnetic shield material, the thickness of the second magnetic shield material is thicker than that of the first magnetic shield material.
摘要翻译：提供一种通过提高包括MRAM器件的半导体器件中的外部磁场的电阻来提高MRAM器件的数据保持特性的技术。第一磁屏蔽材料经由第一管芯附着膜设置在管芯焊盘上。然后，半导体芯片通过第二芯片附着膜安装在第一磁屏蔽材料上。此外，第二磁屏蔽材料通过第三芯片附着膜设置在半导体芯片的上方。也就是说，半导体芯片被布置成被第一磁屏蔽材料和第二磁屏蔽材料夹在中间。此时，当第二磁屏蔽材料的平面区域小于第一磁屏蔽材料的平面区域时，第二磁屏蔽材料的厚度比第一磁屏蔽材料的厚度厚。

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