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1. 发明申请

US20060077601A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20060077601A1
公开(公告)日：2006-04-13
申请号：US11222780
申请日：2005-09-12
申请人： Hiroyuki Ikeda , Kazuo Tanaka , Hiroyasu Ishizuka , Koichiro Takakuwa
发明人： Hiroyuki Ikeda , Kazuo Tanaka , Hiroyasu Ishizuka , Koichiro Takakuwa
IPC分类号： H02H9/00
CPC分类号： H01L27/0251
摘要： The invention intends to provide a semiconductor device capable of preventing an electrostatic breakdown especially by the CDM, of the electrostatic breakdowns generated between plural power supply systems, with a few number of protection circuits. The semiconductor device includes a first circuit block that operates with a first power supply voltage and a first reference voltage, and a second circuit block that operates with a second power supply voltage and a second reference voltage. Further, the semiconductor device includes a first clamp circuit that clamps a potential between the first power supply voltage and the second reference voltage, a second clamp circuit that clamps a potential between the second power supply voltage and the first reference voltage, and a third clamp circuit that clamps a potential between the first reference voltage and the second reference voltage.
摘要翻译：本发明旨在提供一种半导体器件，其能够防止特别是CDM的静电击穿在多个电源系统之间产生的静电击穿与少数保护电路。半导体器件包括以第一电源电压和第一参考电压工作的第一电路块，以及以第二电源电压和第二参考电压工作的第二电路块。此外，半导体器件包括钳位第一电源电压和第二参考电压之间的电位的第一钳位电路，钳位第二电源电压和第一参考电压之间的电位的第二钳位电路和第三钳位电路电路，钳位第一参考电压和第二参考电压之间的电位。

2. 发明申请

US20080173899A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20080173899A1
公开(公告)日：2008-07-24
申请号：US11970512
申请日：2008-01-07
申请人： Koichiro TAKAKUWA , Kazuo Tanaka
发明人： Koichiro TAKAKUWA , Kazuo Tanaka
IPC分类号： H01L27/10
CPC分类号： H01L27/0251 , H01L23/5286 , H01L24/06 , H01L2924/1306 , H01L2924/13091 , H01L2924/3011 , H01L2924/00
摘要： There is provided a technology which allows sufficient protection of internal circuits from electrostatic discharge even when internal-circuit power source pads and internal-circuit GND pads are formed on an internal circuit region. Internal-circuit power source pads and internal-circuit GND pads are placed in the core region of a semiconductor chip. Between the internal-circuit power source pads and the internal-circuit GND pads, the internal circuits are formed. Between the internal-circuit power source pads and the internal-circuit GND pads, electrostatic protection circuits for protecting the internal circuits from a surge current are further formed. Each of the electrostatic protection circuits is composed of a discharge circuit for causing the surge current to flow therein and a control circuit for controlling the discharge circuit. The present invention is characterized in that the discharge circuits are placed in the core region and the control circuits are placed in an I/O region.
摘要翻译：即使在内部电路区域上形成内部电路电源焊盘和内部电路GND焊盘的情况下，也提供了能够充分保护内部电路免受静电放电的技术。内部电路电源焊盘和内部电路GND焊盘放置在半导体芯片的芯区域中。内部电源焊盘与内部电路GND焊盘之间形成内部电路。在内部电源焊盘和内部电路GND焊盘之间，进一步形成用于保护内部电路免受浪涌电流的静电保护电路。每个静电保护电路由用于使浪涌电流流过的放电电路和用于控制放电电路的控制电路组成。本发明的特征在于，将放电电路放置在芯区域中，将控制电路放置在I / O区域中。

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