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1. 发明授权

US4888783A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4888783A
公开(公告)日：1989-12-19
申请号：US169472
申请日：1988-03-17
申请人： Keisuke Kojima , Kazuo Kyuma , Susumu Noda , Masaaki Kameya , Jun Ohta , Koichi Hammanaka
发明人： Keisuke Kojima , Kazuo Kyuma , Susumu Noda , Masaaki Kameya , Jun Ohta , Koichi Hammanaka
IPC分类号： G02F3/02 , H01S5/06 , H01S5/0625 , H01S5/12 , H01S5/125 , H01S5/187 , H01S5/227
CPC分类号： H01S5/187 , G02F3/026 , H01S5/0608 , H01S5/12 , H01S5/125 , H01S5/06255 , H01S5/227 , H01S5/2275
摘要： In a light-responsive semiconductor device in which the laser oscillation state is controlled by incident light, a layer of material having a conductivity modulatable by light is integrated in a semiconductor laser structure and is responsive to the incident light for the control of the laser oscillation state of the device. In one embodiment constituting a light logic element, a plurality of semiconductor lasers are integrated on a substrate with each respective semiconductor laser having a grating along the entirety or a portion thereof and provided with a light waveguide connecting with a waveguide of an adjacent semiconductor laser. In a bistable semiconductor laser there are provided two different conductivity type light confinement layers, an active layer comprising a multiple quantum well structure which is between the two light confinement layers, a grating provided close to the quantum well active layer. The oscillation wavelength established by the grating is shorter than the peak gain wavelength produced by the quantum well active layer.
摘要翻译：在其中通过入射光控制激光振荡状态的光响应半导体器件中，具有可由光调制的导电性的材料层集成在半导体激光器结构中并且响应入射光以控制激光振荡设备状态在构成光逻辑元件的一个实施例中，多个半导体激光器集成在基板上，每个相应的半导体激光器具有沿整个或其一部分的光栅，并且设置有与相邻半导体激光器的波导连接的光波导。在双稳半导体激光器中，提供了两个不同的导电型光限制层，包括位于两个光限制层之间的多量子阱结构的有源层，靠近量子阱活性层提供的光栅。由光栅建立的振荡波长比由量子阱活性层产生的峰值增益波长短。

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