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1. 发明申请

US20140034971A1 SEMICONDUCTOR APPARATUS AND METHOD FOR MAKING SEMICONDUCTOR APPARATUS 有权
标题翻译：半导体装置和制造半导体装置的方法
公开(公告)号：US20140034971A1
公开(公告)日：2014-02-06
申请号：US14112374
申请日：2012-04-06
申请人： Kohji Ishikura
发明人： Kohji Ishikura
IPC分类号： H01L29/32 , H01L29/78 , H01L29/66 , H01L29/20
CPC分类号： H01L29/7787 , H01L27/095 , H01L29/2003 , H01L29/205 , H01L29/32 , H01L29/41725 , H01L29/41758 , H01L29/41775 , H01L29/42316 , H01L29/66446 , H01L29/66462 , H01L29/78 , H01L29/812
摘要： A semiconductor apparatus invention includes a substrate (1), an epitaxial layer (2) formed on the substrate (1), a gate electrode (3), a source electrode (4), and a drain electrode (5) that are formed on the epitaxial layer. The source electrode (4) and the drain electrode (5) each include at least two first divided electrodes that are formed to extend in parallel to each other in a first direction, inter-electrode distances Ps and Pd between the first divided electrodes are greater than or equal to a radius of an abnormal growth portion formed on a surface of the epitaxial layer (2), and widths of the first divided electrodes are less than or equal to the radius of the abnormal growth portion.
摘要翻译：半导体装置发明包括基板（1），形成在基板（1）上的外延层（2），栅电极（3），源电极（4）和漏电极（5）外延层。源电极（4）和漏电极（5）各自包括形成为沿第一方向彼此平行地延伸的至少两个第一分割电极，第一分割电极之间的电极间距离Ps和Pd较大大于或等于形成在外延层（2）的表面上的异常生长部分的半径，并且第一分割电极的宽度小于或等于异常生长部分的半径。

2. 发明申请

US20110233559A1 FIELD-EFFECT TRANSISTOR 有权
标题翻译：场效应晶体管
公开(公告)号：US20110233559A1
公开(公告)日：2011-09-29
申请号：US13071542
申请日：2011-03-25
申请人： KOHJI ISHIKURA
发明人： KOHJI ISHIKURA
IPC分类号： H01L29/772
CPC分类号： H01L29/812 , H01L21/823481 , H01L29/0692 , H01L29/2003 , H01L29/41758 , H01L29/66462 , H01L29/66856 , H01L29/66871 , H01L29/7787
摘要： A field-effect transistor (FET) in which a gate electrode is located between a source electrode formed on one side of the gate electrode and a drain electrode formed on the other side, a source ohmic contact is formed under the source electrode and a drain ohmic contact is formed under the drain electrode. In the FET, the rise in the channel temperature is suppressed, the parasitic capacitance with a substrate is decreased, and the temperature dependence of drain efficiency is reduced, so that highly efficient operation can be achieved at high temperatures. The drain electrode is divided into a plurality of drain sub-electrodes spaced from each other and an insulating region is formed between the drain ohmic contacts formed under the drain sub-electrodes.
摘要翻译：一种场效应晶体管（FET），其中栅极位于形成在栅电极的一侧上的源电极和形成在另一侧的漏电极之间，源极欧姆接触形成在源极和漏极在漏极下方形成欧姆接触。在FET中，沟道温度的上升被抑制，与衬底的寄生电容减小，并且漏极效率的温度依赖性降低，从而可以在高温下实现高效率的操作。漏电极被分成彼此间隔开的多个漏极子电极，并且在形成在漏极子电极之下的漏极欧姆接触点之间形成绝缘区域。

3. 发明授权

US09166009B2 Semiconductor apparatus and method for making semiconductor apparatus 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US09166009B2
公开(公告)日：2015-10-20
申请号：US14112374
申请日：2012-04-06
申请人： Kohji Ishikura
发明人： Kohji Ishikura
IPC分类号： H01L29/417 , H01L29/32 , H01L29/20 , H01L29/423 , H01L29/66 , H01L29/778 , H01L29/812 , H01L29/78
CPC分类号： H01L29/7787 , H01L27/095 , H01L29/2003 , H01L29/205 , H01L29/32 , H01L29/41725 , H01L29/41758 , H01L29/41775 , H01L29/42316 , H01L29/66446 , H01L29/66462 , H01L29/78 , H01L29/812
摘要： A semiconductor apparatus invention includes a substrate (1), an epitaxial layer (2) formed on the substrate (1), a gate electrode (3), a source electrode (4), and a drain electrode (5) that are formed on the epitaxial layer. The source electrode (4) and the drain electrode (5) each include at least two first divided electrodes that are formed to extend in parallel to each other in a first direction, inter-electrode distances Ps and Pd between the first divided electrodes are greater than or equal to a radius of an abnormal growth portion formed on a surface of the epitaxial layer (2), and widths of the first divided electrodes are less than or equal to the radius of the abnormal growth portion.
摘要翻译：半导体装置发明包括基板（1），形成在基板（1）上的外延层（2），栅电极（3），源电极（4）和漏电极（5）外延层。源电极（4）和漏电极（5）各自包括形成为沿第一方向彼此平行地延伸的至少两个第一分割电极，第一分割电极之间的电极间距离Ps和Pd较大大于或等于形成在外延层（2）的表面上的异常生长部分的半径，并且第一分割电极的宽度小于或等于异常生长部分的半径。

4. 发明授权

US08599400B2 Image forming device, control method, and program for image forming device 有权
标题翻译：图像形成装置，图像形成装置的控制方法和程序
公开(公告)号：US08599400B2
公开(公告)日：2013-12-03
申请号：US12923242
申请日：2010-09-10
申请人： Shigeru Nakamura , Takafumi Shimmoto , Kohji Ishikura , Masaki Tasaka
发明人： Shigeru Nakamura , Takafumi Shimmoto , Kohji Ishikura , Masaki Tasaka
IPC分类号： G06K15/00 , G06F15/00
CPC分类号： H04N1/00846 , G06F21/608 , H04N1/00872 , H04N1/00875 , H04N2201/0094 , H04N2201/3269
摘要： When a control code detection unit detects a control code, an image storage unit stores the image data of pages that are entered after the page with the control code added thereto. A control code decision unit decides the content of control for the output processing of the image data based on all the control codes detected by the control code detection unit. Then, based on the content of control decided by the control code decision unit, a control unit controls the output processing of the image data stored in the image storage unit.
摘要翻译：当控制代码检测单元检测到控制代码时，图像存储单元将添加有控制代码的页面之后输入的页面的图像数据存储。控制代码决定单元基于由控制代码检测单元检测到的所有控制代码来决定图像数据的输出处理的控制内容。然后，控制部基于由控制代码决定部决定的控制内容，控制存储在图像存储部中的图像数据的输出处理。

5. 发明申请

US20100295097A1 FIELD-EFFECT TRANSISTOR 有权
标题翻译：场效应晶体管
公开(公告)号：US20100295097A1
公开(公告)日：2010-11-25
申请号：US12770018
申请日：2010-04-29
申请人： Isao Takenaka , Kazunori Asano , Kohji Ishikura
发明人： Isao Takenaka , Kazunori Asano , Kohji Ishikura
IPC分类号： H01L29/778 , H01L23/00
CPC分类号： H03F3/195 , H01L21/28593 , H01L29/402 , H01L29/7786 , H03F1/56 , H03F2200/222 , H03F2200/387 , H03F2200/451
摘要： A field-effect transistor according to the present invention includes a silicon substrate that has a resistivity of not more than 0.02 Ω•cm, a channel layer that is formed on the silicon substrate and has a thickness of at least 5 μm, a barrier layer that is formed on the channel layer and supplies the channel layer with electrons, a two dimensional electron gas layer that is formed by a hetero junction between the channel layer and the barrier layer, a source electrode and a drain electrode that each form an ohmic contact with the barrier layer, and a gate electrode that is formed between the source electrode and the drain electrode, and forms a Schottky barrier junction with the barrier layer.
摘要翻译：根据本发明的场效应晶体管包括硅衬底，其具有不大于0.02Ω·cm·cm的电阻率，形成在硅衬底上并且具有至少5μm的厚度的沟道层，屏障形成在沟道层上并且向沟道层提供电子的层，由沟道层和阻挡层之间的异质结形成的二维电子气体层，源极和漏极，每个形成欧姆与阻挡层接触，以及形成在源电极和漏极之间的栅电极，并与势垒层形成肖特基势垒结。

6. 发明申请

US20080069664A1 Device, method, and computer program product for controlling ring binding 失效
标题翻译：用于控制环绑定的设备，方法和计算机程序产品
公开(公告)号：US20080069664A1
公开(公告)日：2008-03-20
申请号：US11901206
申请日：2007-09-13
申请人： Tadashi Nagata , Nobuaki Tomidokoro , Tsuyoshi Endoh , Motoyuki Katsumata , Kohji Ishikura , Akira Miyazaki , Aritaka Hagiwara
发明人： Tadashi Nagata , Nobuaki Tomidokoro , Tsuyoshi Endoh , Motoyuki Katsumata , Kohji Ishikura , Akira Miyazaki , Aritaka Hagiwara
IPC分类号： B42C1/12 , G06F19/00
CPC分类号： B42B5/103 , G03G15/6544
摘要： A size storing unit stores a size of a ring member for binding stacked sheets. A range determining unit determines whether a thickness represented by input thickness information is larger than a minimum total thickness of sheets allowed to be bound with a ring member having the stored size and equal to or smaller than a maximum total thickness of sheets that can be bound with the ring member. When it is determined that the thickness represented by the thickness information is equal to or smaller than the minimum total thickness or larger than the maximum total thickness, a setting unit sets the size stored in the size storing unit to a different size.
摘要翻译：尺寸存储单元存储用于装订堆叠片材的环形构件的尺寸。范围确定单元确定由输入厚度信息表示的厚度是否大于允许与具有存储尺寸并且等于或小于可以绑定的片材的最大总厚度的环形构件绑定的片材的最小总厚度与环成员。当确定由厚度信息表示的厚度等于或小于最小总厚度或大于最大总厚度时，设置单元将存储在尺寸存储单元中的尺寸设置为不同的尺寸。

7. 发明授权

US08507919B2 Field-effect transistor 有权
标题翻译：场效应晶体管
公开(公告)号：US08507919B2
公开(公告)日：2013-08-13
申请号：US13071542
申请日：2011-03-25
申请人： Kohji Ishikura
发明人： Kohji Ishikura
IPC分类号： H01L29/15
CPC分类号： H01L29/812 , H01L21/823481 , H01L29/0692 , H01L29/2003 , H01L29/41758 , H01L29/66462 , H01L29/66856 , H01L29/66871 , H01L29/7787
摘要： A field-effect transistor (FET) in which a gate electrode is located between a source electrode formed on one side of the gate electrode and a drain electrode formed on the other side, a source ohmic contact is formed under the source electrode and a drain ohmic contact is formed under the drain electrode. In the FET, the rise in the channel temperature is suppressed, the parasitic capacitance with a substrate is decreased, and the temperature dependence of drain efficiency is reduced, so that highly efficient operation can be achieved at high temperatures. The drain electrode is divided into a plurality of drain sub-electrodes spaced from each other and an insulating region is formed between the drain ohmic contacts formed under the drain sub-electrodes.
摘要翻译：一种场效应晶体管（FET），其中栅极位于形成在栅电极的一侧上的源电极和形成在另一侧的漏电极之间，源极欧姆接触形成在源电极和漏极在漏极下形成欧姆接触。在FET中，沟道温度的上升被抑制，与衬底的寄生电容减小，并且漏极效率的温度依赖性降低，从而可以在高温下实现高效率的操作。漏电极被分成彼此间隔开的多个漏极子电极，并且在形成在漏极子电极之下的漏极欧姆接触点之间形成绝缘区域。

8. 发明授权

US08431963B2 Field-effect transistor 有权
标题翻译：场效应晶体管
公开(公告)号：US08431963B2
公开(公告)日：2013-04-30
申请号：US12770018
申请日：2010-04-29
申请人： Isao Takenaka , Kazunori Asano , Kohji Ishikura
发明人： Isao Takenaka , Kazunori Asano , Kohji Ishikura
IPC分类号： H01L29/778
CPC分类号： H03F3/195 , H01L21/28593 , H01L29/402 , H01L29/7786 , H03F1/56 , H03F2200/222 , H03F2200/387 , H03F2200/451
摘要： A field-effect transistor according to the present invention includes a silicon substrate that has a resistivity of not more than 0.02 Ω·cm, a channel layer that is formed on the silicon substrate and has a thickness of at least 5 μm, a barrier layer that is formed on the channel layer and supplies the channel layer with electrons, a two dimensional electron gas layer that is formed by a hetero junction between the channel layer and the barrier layer, a source electrode and a drain electrode that each form an ohmic contact with the barrier layer, and a gate electrode that is formed between the source electrode and the drain electrode, and forms a Schottky barrier junction with the barrier layer.
摘要翻译：根据本发明的场效应晶体管包括具有不大于0.02Ω·cm的电阻率的硅衬底，形成在硅衬底上并具有至少5μm厚度的沟道层，阻挡层形成在沟道层上并且向沟道层提供电子的二维电子气体层，由沟道层和阻挡层之间的异质结形成的二维电子气体层，每个形成欧姆接触的源电极和漏电极以及形成在源电极和漏极之间的栅电极，并与阻挡层形成肖特基势垒结。

9. 发明申请

US20110063652A1 Image forming device, control method, and program for image forming device 有权
标题翻译：图像形成装置，图像形成装置的控制方法和程序
公开(公告)号：US20110063652A1
公开(公告)日：2011-03-17
申请号：US12923242
申请日：2010-09-10
申请人： Shigeru Nakamura , Takafumi Shimmoto , Kohji Ishikura , Masaki Tasaka
发明人： Shigeru Nakamura , Takafumi Shimmoto , Kohji Ishikura , Masaki Tasaka
IPC分类号： G06K15/02
CPC分类号： H04N1/00846 , G06F21/608 , H04N1/00872 , H04N1/00875 , H04N2201/0094 , H04N2201/3269
摘要： When a control code detection unit detects a control code, an image storage unit stores the image data of pages that are entered after the page with the control code added thereto. A control code decision unit decides the content of control for the output processing of the image data based on all the control codes detected by the control code detection unit. Then, based on the content of control decided by the control code decision unit, a control unit controls the output processing of the image data stored in the image storage unit.
摘要翻译：当控制代码检测单元检测到控制代码时，图像存储单元将添加有控制代码的页面之后输入的页面的图像数据存储。控制代码决定单元基于由控制代码检测单元检测到的所有控制代码来决定图像数据的输出处理的控制内容。然后，控制部基于由控制代码决定部决定的控制内容，控制存储在图像存储部中的图像数据的输出处理。

10. 发明授权

US07537205B2 Device, method, and computer program product for controlling ring binding 失效
标题翻译：用于控制环绑定的设备，方法和计算机程序产品
公开(公告)号：US07537205B2
公开(公告)日：2009-05-26
申请号：US11901206
申请日：2007-09-13
申请人： Tadashi Nagata , Nobuaki Tomidokoro , Tsuyoshi Endoh , Motoyuki Katsumata , Kohji Ishikura , Akira Miyazaki , Aritaka Hagiwara
发明人： Tadashi Nagata , Nobuaki Tomidokoro , Tsuyoshi Endoh , Motoyuki Katsumata , Kohji Ishikura , Akira Miyazaki , Aritaka Hagiwara
IPC分类号： B65H37/04
CPC分类号： B42B5/103 , G03G15/6544
摘要： A size storing unit stores a size of a ring member for binding stacked sheets. A range determining unit determines whether a thickness represented by input thickness information is larger than a minimum total thickness of sheets allowed to be bound with a ring member having the stored size and equal to or smaller than a maximum total thickness of sheets that can be bound with the ring member. When it is determined that the thickness represented by the thickness information is equal to or smaller than the minimum total thickness or larger than the maximum total thickness, a setting unit sets the size stored in the size storing unit to a different size.
摘要翻译：尺寸存储单元存储用于装订堆叠片材的环形构件的尺寸。范围确定单元确定由输入厚度信息表示的厚度是否大于允许与具有存储尺寸并且等于或小于可以绑定的片材的最大总厚度的环形构件绑定的片材的最小总厚度与环成员。当确定由厚度信息表示的厚度等于或小于最小总厚度或大于最大总厚度时，设置单元将存储在尺寸存储单元中的尺寸设置为不同的尺寸。

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