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1. 发明专利

FR2100594A1 未知
公开(公告)号：FR2100594A1
公开(公告)日：1972-03-24
申请号：FR7039681
申请日：1970-11-04
申请人： KOGYO GIJUTSUIN , KOGYO GIJUTSUIN , TOKYO SHIBAURA ELECTRIC CO , TOKYO SHIBAURA ELECTRIC CO
IPC分类号： G06K9/62 , G06K9/64 , G06K9/66 , G06G7/00

2. 发明授权

US3895978A Method of manufacturing transistors 失效
标题翻译：制造晶体管的方法
公开(公告)号：US3895978A
公开(公告)日：1975-07-22
申请号：US16020171
申请日：1971-07-06
申请人： KOGYO GIJUTSUIN
发明人： TARUI YASUO , HAYASHI YUTAKA , SEKIGAWA TOSHIHIRO
IPC分类号： H01L21/00 , H01L21/8234 , H01L27/00 , H01L27/088 , H01L29/00 , H01L29/06 , H01L29/10 , H01L29/423 , H01L29/45 , H01L29/78 , H01L7/44
CPC分类号： H01L29/7816 , H01L21/00 , H01L21/8234 , H01L27/00 , H01L27/088 , H01L29/00 , H01L29/0696 , H01L29/1045 , H01L29/42368 , H01L29/42376 , H01L29/456 , H01L29/7801 , H01L29/7802 , H01L29/7839
摘要： Improved field-effect transistors, in which effective base width is determined by impurity diffusion length or by difference between impurity diffusion lengths capable of reducing parasitic capacitance between gate and drain and or between gate or drain and other electrode, construction capable of leading out simply and effectively electrode from the base region and or source region, and methods adapted to manufacture the above-mentioned field-effect transistors and lateral transistors are disclosed herein.
摘要翻译：改进的场效应晶体管，其中有效基极宽度由杂质扩散长度或能够减小栅极和漏极之间和/或栅极或漏极与其它电极之间的寄生电容的杂质扩散长度之间的差异决定，能够简单地导出本文公开了适用于制造上述场效应晶体管和横向晶体管的方法，从基极区域和/或源极区域有效地进行电极的制造。

3. 发明授权

US3753202A Displacement transducer 失效
标题翻译：位移传感器
公开(公告)号：US3753202A
公开(公告)日：1973-08-14
申请号：US3753202D
申请日：1971-04-29
申请人： KOGYO GIJUTSUIN
发明人： KATAOKA S , YAMADA H
IPC分类号： G01D5/18 , H01L43/08 , H01C7/16
CPC分类号： H01L43/08
摘要： A displacement transducer is comprised of an magnetoresistive element, or an elongated semiconductor member having the magnetoresistive effect. A pair of electrodes are affixed at both ends of this magnetoresistive element, and a third electrode at the center. While an electric current is made to flow therethrough from each of the pair of electrodes to the third electrode, an applied magnetic field is moved thereon toward either side of the third electrode to obtain an output voltage due to the magnetoresistive effect of the element. In another embodiment of the invention, wherein a plurality of metal boundaries are formed at intervals between a pair of electrodes at both ends of an magnetoresistive element, a leading end of an applied magnetic field is inclined to such a degree as to extend between at least two adjoining ones of the metal boundaries.
摘要翻译：位移传感器由磁阻元件或具有磁阻效应的细长半导体元件组成。一对电极固定在该磁阻元件的两端，第三电极位于中心。当使电流从一对电极中的每一个流到第三电极时，施加的磁场在其上朝向第三电极的任一侧移动，以获得由于元件的磁阻效应而导致的输出电压。在本发明的另一个实施例中，其中在磁阻元件两端的一对电极之间间隔地形成多个金属边界，所施加的磁场的前端倾斜至至少在至少两个相邻的金属边界。

4. 发明授权

US3714522A Semiconductor device having surface electric-field effect 失效
标题翻译：具有表面电场效应的半导体器件
公开(公告)号：US3714522A
公开(公告)日：1973-01-30
申请号：US3714522D
申请日：1969-11-13
申请人： KOGYO GIJUTSUIN AGENCY OF IND , SCIENCE AND TECHNOLOGY MINISTR
发明人： KOMIYA Y , MOLL J , TARUI Y
IPC分类号： H01L21/00 , H01L27/088 , H01L29/00 , H01L29/43 , H01L31/113 , H01L33/00 , H01L11/14
CPC分类号： H01L33/0041 , H01L21/00 , H01L27/088 , H01L29/00 , H01L29/435 , H01L31/1133 , H01L31/1136
摘要： A semiconductor device comprising a semiconductor, an insulating layer and a resistive or half conducting layer which are provided on the surface of said semiconductor, and a metallic electrode adjoined to said latter layers and having such a surface electric-field effect as that any potential distribution is established on said insulating layer, said effect causing multiplication and increase of the functional ability of the semiconductor device, whereby for example, effective utilization of the device as an amplifier comprising a high frequency, surface electric-field effect transistor, a high speed switching transistor or tetrode is made possible. Furthermore, a semiconductor device having the same structure as mentioned above except that the insulating layer and resistive layer or half conducting layers are made of a material capable of transmitting an input light ray therethrough and mutual interaction between the input light ray and said semiconductor is skillfully utilized for effective multiplication of the functional ability of the semiconductor device, whereby, for example, effective utilization of the device as a light detector, a surface photo transistor, a surface light generating element control of which is attained by gate voltage, or a surface light modulator is made possible.
摘要翻译：一种半导体器件，包括设置在所述半导体的表面上的半导体，绝缘层和电阻或半导体层，以及与所述后层连接的金属电极，并且具有这样的表面电场效应：任何电位分布建立在所述绝缘层上，所述效应导致半导体器件的功能能力的增加和增加，从而例如有效地利用作为包括高频，表面电场效应晶体管的放大器的器件，高速开关晶体管或四极管成为可能。

5. 发明授权

US3688267A Pattern identification systems operating by the multiple similarity method 失效
标题翻译：通过多种相似方法操作的图案识别系统
公开(公告)号：US3688267A
公开(公告)日：1972-08-29
申请号：US3688267D
申请日：1970-11-02
申请人： TAIZO IIJIMA , KENICHI MORI , KOGYO GIJUTSUIN , INTERN TARDE & IND JAPAN , TOKYO SHIBAURA ELECTRIC CO
发明人： IIJIMA TAIZO , MORI KENICHI
IPC分类号： G06K9/62 , G06K9/64 , G06K9/66 , G06K9/08
CPC分类号： G06K9/64
摘要： Pattern identification systems wherein N number of different ''''standard patterns'''' are prepared for each ''''reference pattern, '''' and whether a given input pattern belongs to the category of the reference pattern or not is determined according to whether a value of the sum of the squares of N number of different similarities of the input pattern to the standard patterns, or a value of the square root thereof, exceeds or falls short of a predetermined maximum.
摘要翻译：对于每个“参考图案”准备N个不同的“标准图案”的图案识别系统，以及根据是否是平方和的值来确定给定输入图案是否属于参考图案的类别与标准图案的输入图案的N个不同相似度或其平方根的值的N个数量超过或不超过预定的最大值。

6. 发明授权

US3681616A Logic circuits 失效
标题翻译：逻辑电路
公开(公告)号：US3681616A
公开(公告)日：1972-08-01
申请号：US3681616D
申请日：1969-10-31
申请人： KOGYO GIJUTSUIN
发明人： MORI RYOICHI , TAJIMA HIROAKI , TSUJI YOSHIO , SANECHIKA NORIAKI
IPC分类号： H03K19/086 , G06F7/50 , H03K19/08 , H03K19/173 , H03K17/00
CPC分类号： G06F7/50 , H03K19/0813
摘要： A novel type of logic circuit, the output binary logic functions or signals thereof being defined according to whether each of the output voltage differences is positive or negative, is so organized that the logic circuit comprises a plurality of current switches to each of which is applied an input signal composed of a pair of voltages, and a binary output of 0 and 1 is delivered therefrom, at most two circuit elements wherein the binary outputs from said plurality of current switches are added in a linear manner, a plurality of circuit positions the potentials of which are in a linear relation to the resultant voltage obtained in said circuit elements, and means for producing voltage differences between said plurality of circuit positions, whereby a plurality of said binary logic functions or signals are simultaneously obtained. In another aspect, a plurality of reference potentials may also be provided, and the voltage differences between any of said plurality of circuit positions and said plurality of reference potentials may be employed as the outputs of the logic circuit.

7. 发明授权

US3652843A Setup system in analog computer 失效
标题翻译：模拟计算机中的设置系统
公开(公告)号：US3652843A
公开(公告)日：1972-03-28
申请号：US3652843D
申请日：1969-12-29
申请人： KOGYO GIJUTSUIN
发明人： KUROKAWA KAZUO , MATSUDA IKUO
IPC分类号： G06G7/06 , G06G7/38 , G06G7/18 , G06G7/36
CPC分类号： G06G7/06 , G06G7/38
摘要： A setup system in an analog computer wherein a group of potentiometers are inserted in the input sides of an integrator provided in the computer corresponding to the variables in an equation to be solved, and another group of potentiometers are inserted in the output sides of the integrators so that the factors for the time and amplitude employed for the variables can be controlled separately and in a unitary manner. In another aspect of the invention, a dummy variable is introduced by an additional provision of an integrator, whereby the solution of an equation having a coefficient which tends to be infinitive at a time instant within a range for which the equation is to be solved is much facilitated.
摘要翻译：一种模拟计算机中的设置系统，其中一组电位计被插入到与要求解的等式中的变量相对应的计算机中提供的计算机的输入侧中，并且另一组电位计被插入到积分器的输出侧因此可以单独控制变量所用时间和幅度的因素。

8. 发明授权

US3854092A Apparatus for measuring dynamic characteristics of semiconductor switching elements 失效
标题翻译：用于测量半导体开关元件动态特性的装置
公开(公告)号：US3854092A
公开(公告)日：1974-12-10
申请号：US21074371
申请日：1971-12-22
申请人： KOGYO GIJUTSUIN AN EXTRA MINIS , IWATSU ELECTRIC CO LTD
发明人： TANI T , TOMITA M
IPC分类号： G01R31/26 , G01R31/22
CPC分类号： G01R31/263
摘要： An apparatus for automatically measuring dynamic characteristics of a semiconductor switching element excited by a single pulse or repeated pulses. A current output and a voltage output derived from the excited element are respectively sampled simultaneously. Sampled values are successively stored and then successively read out for each of the current output and the voltage output. A desired calculation is performed for each combination of the sampled values of the current output and the voltage output which are simultaneously read out, until read out of an immediately succeeding one of the combinations of the sampled values. Results of the above calculation are successively displayed in a display device.
摘要翻译：一种用于自动测量由单个脉冲或重复脉冲激发的半导体开关元件的动态特性的装置。分别从激励元件得到的电流输出和电压输出同时采样。连续存储采样值，然后连续读出电流输出和电压输出。对于同时读出的电流输出和电压输出的采样值的每个组合，直到读取出采样值的组合中的紧随其后的一个，才执行所需的计算。上述计算结果依次显示在显示装置中。

9. 发明授权

US3825951A Magnetic disc memory 失效
标题翻译：磁盘存储器
公开(公告)号：US3825951A
公开(公告)日：1974-07-23
申请号：US30790272
申请日：1972-11-20
申请人： KOGYO GIJUTSUIN
发明人： KATSUMORI T , KAWAKAMI S , KOBAYASHI I
IPC分类号： G11B5/55 , G11B23/02 , G11B23/50
CPC分类号： G11B23/021 , G11B5/5521 , G11B23/505
摘要： A magnetic disc memory apparatus having a multiplicity of fins secured to a base which supports a motor, a spindle carrying a disc pack, a carriage carrying magnetic head supporting means and an actuator for the carriage. The fins are disposed in the path of externally drawn air so as to minimize the difference between the temperature of the base and the temperature of the disc pack.
摘要翻译：一种磁盘存储装置，其具有固定到支撑马达的基座上的多个翅片，承载盘片的主轴，承载磁头支撑装置的托架和用于托架的致动器。翅片设置在外部抽吸空气的路径中，以便最小化基座的温度与盘组件的温度之间的差异。

10. 发明授权

US3766446A Integrated circuits comprising lateral transistors and process for fabrication thereof 失效
标题翻译：包含横向晶体管的集成电路及其制造方法
公开(公告)号：US3766446A
公开(公告)日：1973-10-16
申请号：US3766446D
申请日：1970-11-18
申请人： KOGYO GIJUTSUIN
发明人： TARUI T , KOMIYA Y
IPC分类号： H01L21/00 , H01L27/00 , H01L27/07 , H01L19/00
CPC分类号： H01L27/0722 , H01L21/00 , H01L27/00 , Y10S148/037 , Y10S148/053 , Y10S148/085 , Y10S148/096 , Y10S148/106 , Y10S148/136 , Y10S148/145 , Y10S148/151
摘要： A ''''lateral'''' transistor for use in integrated circuits may have its base region formed by a technique of ''''ion implantation'''' with or without a step of impurity diffusion or, alternatively, by two steps of impurity diffusion including the formation of the so-called ''''buried'''' layer. In either case an emitter region is double-diffused into the base region simultaneously with collector diffusion, in such a manner that the base width of the lateral transistor is defined by a difference between the lengths of the double diffusion. The aforesaid ion implantation and buried layer techniques are utilized in the fabrication of integrated circuits incorporating such lateral transistors, in which base regions and isolation regions are formed at the same time. In other integrated circuits also disclosed herein, the lateral transistors together with or without field-effect transistors are isolated by means of substrate having higher resistivity than the base regions of the transistors.
摘要翻译：用于集成电路的“横向”晶体管可以通过具有或不具有杂质扩散步骤的或具有杂质扩散步骤的“离子注入”技术形成其基极区域，或者可选地，通过两个步骤的杂质扩散，包括形成所谓的 “埋”层。在任一情况下，发射极区域与集电极扩散同时扩散到基极区域中，使得横向晶体管的基极宽度由双扩散长度之间的差定义。上述离子注入和掩埋层技术用于结合这样的横向晶体管的集成电路的制造，其中同时形成基极区域和隔离区域。在本文也公开的其他集成电路中，通过具有比晶体管的基极区更高的电阻率的衬底来隔离与场效应晶体管一起或不与场效应晶体管连接的横向晶体管。

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