专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5737082A Method of electro-optical measurement for vector components of electric fields and an apparatus thereof 失效
标题翻译：电场矢量分量的电光测量方法及其装置
公开(公告)号：US5737082A
公开(公告)日：1998-04-07
申请号：US506385
申请日：1995-07-24
申请人： Taro Itatani , Tadashi Nakagawa , Yoshinobu Sugiyama , Kimihiro Ohta
发明人： Taro Itatani , Tadashi Nakagawa , Yoshinobu Sugiyama , Kimihiro Ohta
IPC分类号： G01R15/24 , G01J4/00 , G01R19/00 , G01R29/12 , G01R29/14 , G01R31/302
CPC分类号： G01R15/242 , G01J4/00
摘要： An apparatus of measuring an electric signal comprises a laser device, optical elements, an electrooptic crystal, a photoelectric converter, and an electric circuit. The electrooptic crystal is selected from the materials in the type of having properties of changing its refractive index in the direction of its optic major axes and the direction of these axes by a function of an applied electric field. In the apparatus, the electrooptic crystal is placed in the electric field applied by an electric circuit under measurement. A laser beam emitted from the laser device is incident on the electrooptic crystal. A reflected light passed through the crystal is resolved into rays in two polarized direction. Each ray is subjected to a photoelectric conversion by passing through the photoelectric converter and exerted as an electric output. A differential signal of the electric output is defined as a measurement signal. By selecting two polarized directions of the laser beam by a half-wave plate as the optical element, two signals corresponding to the changes in the refractive index and optic major axes of the crystal. Two component of a vector of the electric field can be obtained by a first order combination of these signals.
摘要翻译：测量电信号的装置包括激光装置，光学元件，电光晶体，光电转换器和电路。电光晶体选自具有通过施加的电场的函数在其光学主轴的方向上改变其折射率的特性的类型的材料和这些轴的方向。在该装置中，将电光晶体放置在由测量电路施加的电场中。从激光装置发射的激光束入射到电光晶体上。通过晶体的反射光在两个偏振方向被分解为光线。每个射线通过光电转换器进行光电转换并作为电输出施加。电输出的差分信号被定义为测量信号。通过用半波片选择激光束的两个偏振方向作为光学元件，对应于晶体的折射率和光学主轴的变化的两个信号。可以通过这些信号的一阶组合来获得电场矢量的两个分量。

2. 发明授权

US4620206A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4620206A
公开(公告)日：1986-10-28
申请号：US578574
申请日：1984-02-09
申请人： Kimihiro Ohta , Tadashi Nakagawa , Naoyuki Kawai , Takeshi Kojima , Mitsuo Kawashima
发明人： Kimihiro Ohta , Tadashi Nakagawa , Naoyuki Kawai , Takeshi Kojima , Mitsuo Kawashima
IPC分类号： H01L29/80 , H01L29/15 , H01L29/74 , H01L29/86 , H01L27/12 , H01L29/161
CPC分类号： H01L29/86 , H01L29/155 , Y10S977/76 , Y10S977/761
摘要： A semiconductor device comprises a superlattice semiconductor portion having a plurality of pairs of superlattice semiconductor thin films for forming step differences of band edge energy. The pairs of the thin films are laminated such that parameters which determine the structure of the thin films are monotonically changed in the direction of the lamination of the thin films. Electrodes are disposed to apply an electric field across both ends of the superlattice semiconductor portion. The semiconductor device has a good negative resistance characteristic and a large design freedom of semiconductor device.
摘要翻译：半导体器件包括具有用于形成带边能量的步长差异的多对超晶格半导体薄膜的超晶格半导体部分。层叠这些薄膜，使得确定薄膜结构的参数在薄膜层压方向上单调变化。设置电极以在超晶格半导体部分的两端施加电场。半导体器件具有良好的负电阻特性和半导体器件的大的设计自由度。

3. 发明授权

US4855013A Method for controlling the thickness of a thin crystal film 失效
标题翻译：控制薄晶膜厚度的方法
公开(公告)号：US4855013A
公开(公告)日：1989-08-08
申请号：US92348
申请日：1987-09-02
申请人： Kimihiro Ohta , Tadashi Nakagawa , Takeshi Kojima , Tsunenori Sakamoto , Naoyuki Kawai
发明人： Kimihiro Ohta , Tadashi Nakagawa , Takeshi Kojima , Tsunenori Sakamoto , Naoyuki Kawai
IPC分类号： C23C14/06 , C30B23/02
CPC分类号： C30B29/40 , C23C14/0617 , C30B23/002
摘要： A method for controlling the thickness of a thin crystal film which is grown in a vacuum atmosphere, comprising the steps of: generating an electron beam in the vacuum atmosphere; directing the electron beam thus generated to a crystal being grown to obtain a diffraction pattern of the crystal; detecting the variations in time of the intensity of the diffraction pattern thus obtained; obtaining the number of oscillations from the variations thus detected; and interrupting the growth of the crystal in synchronism with the oscillations of the intensity when the number reaches a predetermined number. The composition ratio of a mixed crystal can be also determined by the ratio among the frequency of oscillations of each crystal which constitutes the mixed crystal. The oscillations of the intensity of the RHEED pattern can be observed more than 400 times so that the thickness of the grown thin crystal film can be measured with the accuracy higher than 1000 .ANG. in terms of the mono-layer.
摘要翻译：一种用于控制在真空气氛中生长的薄晶体膜的厚度的方法，包括以下步骤：在真空气氛中产生电子束; 将由此产生的电子束引导到正在生长的晶体上以获得晶体的衍射图案; 检测由此获得的衍射图的强度的时间变化; 从所检测的变化中获得振荡次数; 并且当数量达到预定数量时与强度的振荡同步地中断晶体的生长。混合晶体的组成比也可以通过构成混合晶体的各晶体的振荡频率之比来确定。可以观察到RHEED图案的强度的振荡超过400次，从而以单层为单位，以高于1000安培的精度测量生长的薄晶体膜的厚度。

4. 发明授权

US4236165A Planar semiconductor device 失效
标题翻译：平面半导体器件
公开(公告)号：US4236165A
公开(公告)日：1980-11-25
申请号：US966626
申请日：1978-12-05
申请人： Mitsuo Kawashima , Kimihiro Ohta , Shoei Kataoka
发明人： Mitsuo Kawashima , Kimihiro Ohta , Shoei Kataoka
IPC分类号： H01L21/208 , H01L27/146 , H01L29/205 , H01L31/0304 , H01L31/09 , H01L47/02 , H01L29/161
CPC分类号： H01L31/03046 , H01L27/14669 , H01L29/205 , H01L31/09 , H01L47/02 , Y02E10/544
摘要： Planar semiconductor device including a crystalline layer of Ga.sub.x Al.sub.1-x Sb compound semiconductor (0.1
摘要翻译：包括在GaSB衬底上生长的GaxAl1-xSb化合物半导体的结晶层（0.1

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式