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1. 发明授权

US5417235A Integrated microvalve structures with monolithic microflow controller 失效
标题翻译：具有单片微流控制器的集成微型阀结构
公开(公告)号：US5417235A
公开(公告)日：1995-05-23
申请号：US98738
申请日：1993-07-28
申请人： Kensall D. Wise , Janet K. Robertson , Jin Ji
发明人： Kensall D. Wise , Janet K. Robertson , Jin Ji
IPC分类号： B01J19/00 , F15C5/00 , F16K99/00 , F16K31/02
CPC分类号： F16K99/0001 , B01J19/0093 , F15C5/00 , F16K99/0007 , F16K99/0051 , F16K2099/0074 , F16K2099/008 , F16K2099/0082 , F16K2099/0086 , Y10T137/0318
摘要： Micromachined microvalves are held both open and closed electrostatically to maintain uniform gas microflow and improve closure characteristics. A microflow controller containing such a valve is combined with a predetermined restricted flow path. Multiple valve/restrictive flow path combinations are integrated on a binary flow path basis. Single and/or multiple valve actuation provides precise but variable flow control. Temperature and pressure sensors can be integrally included. Various valve and controller configurations, and methods of controlling them and forming them, are disclosed.
摘要翻译：微加工微型阀静电保持打开和关闭，以保持均匀的气体微流量并改善封闭特性。包含这种阀的微流控制器与预定的限制流路组合。多个阀/限制流路组合基于二进制流路集成。单个和/或多个阀门致动提供精确但可变的流量控制。温度和压力传感器可以整合在一起。公开了各种阀门和控制器配置以及它们的控制和形成方法。

2. 发明授权

US5385709A Solid state chemical micro-reservoirs 失效
标题翻译：固态化学微储层
公开(公告)号：US5385709A
公开(公告)日：1995-01-31
申请号：US80526
申请日：1993-06-24
申请人： Kensall D. Wise , Johannes W. Schwank , John L. Gland
发明人： Kensall D. Wise , Johannes W. Schwank , John L. Gland
IPC分类号： B01J19/00 , G01N27/12 , G01N35/00 , G01N35/10 , G01N27/00
CPC分类号： B01J19/0093 , G01N35/00 , G01N35/1002 , G01N2035/00237 , G01N27/12
摘要： The present invention relates to a method for storing chemical reagents in micro-reservoirs, a chemical sensor system and a chemical micro-reactor.
摘要翻译：本发明涉及一种在微型储存器中存储化学试剂的方法，化学传感器系统和化学微反应器。

3. 发明授权

US5055838A Silicon tactile imaging array and method of making same 失效
标题翻译：硅手机成像阵列及其制作方法
公开(公告)号：US5055838A
公开(公告)日：1991-10-08
申请号：US282052
申请日：1988-12-09
申请人： Kensall D. Wise , Kenichiro Suzuki
发明人： Kensall D. Wise , Kenichiro Suzuki
IPC分类号： B25J13/08 , G01L1/14 , G06F3/033 , G06F3/041
CPC分类号： B25J13/084 , G01L1/148 , G06F3/044 , G06F2203/04103
摘要： A high-performance single-crystal silicon tactile imaging array organized in a X-Y matrix of capacitor elements. Metallic column lines are formed on a glass support substrate, while the row lines are formed from a contiguous chain of doubly-supported bridge structures, with one such structure for each sensing element. All of the bridge structures are simultaneously fabricated from a single-crystal silicon semiconductor wafer using a two-step boron diffusion process, followed by a silicon-to-glass electrostatic bonding step and subsequent unmasked wafer dissolution. Each bridge structure has a thick center plate for the sense capacitor supported by thinner beams connected to adjacent row single-crystal silicon support rails bonded to the glass substrate. The force sensitivity and maximum operating range of the tactile imager can be selected over a very wide range by appropriately setting the dimensions of these thinner support beams. The resulting imager is rugged, of high resolution and high density, and is inherently stable over time and temperature.
摘要翻译：一种高性能单晶硅触觉成像阵列组织在电容元件的X-Y矩阵中。金属柱线形成在玻璃支撑基板上，而行线由双重支撑的桥结构的连续链形成，每个感测元件具有一个这样的结构。所有的桥结构都使用两步硼扩散工艺由单晶硅半导体晶片同时制造，随后是硅 - 玻璃静电结合步骤和随后未掩模的晶片溶解。每个桥结构具有用于感测电容器的厚中心板，该中心板由与连接到玻璃基板的相邻行单晶硅支撑轨连接的更薄的梁支撑。可以通过适当地设定这些较薄的支撑梁的尺寸，在非常宽的范围内选择触觉成像器的力灵敏度和最大工作范围。所得到的成像器坚固耐用，分辨率高，密度高，在时间和温度上固有的稳定性。

4. 发明授权

US08255061B2 Compact multilevel electrical integration of microsystems 有权
标题翻译：微系统的紧凑型多电子电气集成
公开(公告)号：US08255061B2
公开(公告)日：2012-08-28
申请号：US12415177
申请日：2009-03-31
申请人： Gayatri Eadara Perlin , Brendan E. Casey , Mayurachat Ning Gulari , Kensall D. Wise
发明人： Gayatri Eadara Perlin , Brendan E. Casey , Mayurachat Ning Gulari , Kensall D. Wise
IPC分类号： A61N1/00 , A61B5/04
CPC分类号： B29B7/42 , A61B5/04001 , A61B5/685 , A61B2562/0209 , A61B2562/046 , A61N1/0529 , A61N1/0536 , A61N1/0551 , B02C18/12 , B02C18/2225 , B29B7/603 , B29B7/88
摘要： A microsystem comprising a substrate having an aperture formed therethrough. The aperture includes a first cross-section and a second cross-section—the first cross-section being smaller than the second cross-section to define a ledge therebetween. A probe member is disposed within the aperture of the substrate, such that a backend of the probe member defines a cross-section that is greater than the first cross-section of the aperture and smaller than the second cross-section such that the probe member engages the ledge. A plurality of probe shanks extend from the probe member. Each of the probe shanks includes a plurality of leads disposed there along. Each of the leads extending from the probe shanks to an opposing side of the probe member.
摘要翻译：一种微系统，包括具有穿过其形成的孔的衬底。孔包括第一横截面和第二横截面 - 第一横截面小于第二横截面以在其间限定凸缘。探针构件设置在基底的孔内，使得探针构件的后端限定大于孔的第一横截面并且小于第二横截面的横截面，使得探针构件接触凸缘。多个探针柄从探针构件延伸。探针柄中的每一个包括沿着它设置的多个引线。从探针杆延伸到探针构件的相对侧的每个引线。

5. 发明申请

US20100308456A1 Wafer-Level, Polymer-Based Encapsulation for Microstructure Devices 有权
标题翻译：晶圆级，基于聚合物的微结构器件封装
公开(公告)号：US20100308456A1
公开(公告)日：2010-12-09
申请号：US12858192
申请日：2010-08-17
申请人： Kensall D. Wise , Mayurachat N. Gulari , Ying Yao
发明人： Kensall D. Wise , Mayurachat N. Gulari , Ying Yao
IPC分类号： H01L23/482
CPC分类号： H01L23/5387 , A61N1/0541 , A61N1/37205 , H01L21/4846 , H01L24/24 , H01L24/82 , H01L2224/24137 , H01L2924/12044 , H01L2924/14 , H01L2924/00
摘要： A device includes a first device structure having a semiconductor platform, and a second device structure having a microstructure spaced from the semiconductor platform. The device further includes a cable having a plurality of beams to couple the microstructure to the first device structure. Each beam of the plurality of beams has a polymer coating and a serpentine-shaped region.
摘要翻译：一种器件包括具有半导体平台的第一器件结构和具有与半导体平台间隔开的微结构的第二器件结构。该装置还包括具有多个光束以将微结构耦合到第一器件结构的电缆。多个梁中的每个梁具有聚合物涂层和蛇形区域。

6. 发明授权

US06713828B1 Monolithic fully-integrated vacuum sealed BiCMOS pressure sensor 有权
标题翻译： Monolithic全集成真空密封BiCMOS压力传感器
公开(公告)号：US06713828B1
公开(公告)日：2004-03-30
申请号：US09465961
申请日：1999-12-17
申请人： Abhijeet V. Chavan , Kensall D. Wise
发明人： Abhijeet V. Chavan , Kensall D. Wise
IPC分类号： H01L2984
CPC分类号： G01L9/0073 , B81B2201/0264 , B81C1/00246 , B81C2203/0778 , G01L9/0042 , G01L9/12 , G01P15/0802 , H01L27/0623
摘要： A semiconductor device (20) comprises a substrate (24), a first semiconductor region including a recessed area defining a first cavity (36) between the substrate (24) and the first semiconductor region, an electrical transducer (30) positioned within the first cavity (36), a second semiconductor.region including a recessed area defining a second cavity (40) between the substrate (24) and the second semiconductor region, an electrical circuit (34) positioned within the second cavity (40), and at least one electrode connecting the electrical transducer (30) and the electrical device (34). The semiconductor device (20) includes a first external electrode and a second external electrode formed on the substrate (24) and a sealing layer extending around the perimeter of the cavities and sealing the semiconductor regions to the substrate (24). The sealing layer (78) includes a first electrical connection region and a second electrical connection region that are electrically isolated from each other. The first connection region electrically connects a first internal electrode to the first external electrode and the second connection region electrically connects a second internal electrode to the second external electrode through the sealing layer (78).
摘要翻译：半导体器件（20）包括衬底（24），第一半导体区域，包括限定在衬底（24）和第一半导体区域之间的第一空腔（36）的凹陷区域;电变换器（30）空腔（36），第二半导体区域，其包括限定在所述基板（24）和所述第二半导体区域之间的第二空腔（40）的凹陷区域，位于所述第二空腔（40）内的电路（34）连接电传感器（30）和电气装置（34）的至少一个电极。半导体器件（20）包括形成在衬底（24）上的第一外部电极和第二外部电极以及围绕腔的周边延伸并将半导体区域密封到衬底（24）的密封层。密封层（78）包括彼此电绝缘的第一电连接区域和第二电连接区域。第一连接区域将第一内部电极与第一外部电极电连接，第二连接区域通过密封层（78）将第二内部电极与第二外部电极电连接。

7. 发明授权

US06436853B1 Microstructures 有权
公开(公告)号：US06436853B1
公开(公告)日：2002-08-20
申请号：US09794455
申请日：2001-02-27
申请人： Liwei Lin , Yu-Ting Cheng , Khalil Najafi , Kensall D. Wise
发明人： Liwei Lin , Yu-Ting Cheng , Khalil Najafi , Kensall D. Wise
IPC分类号： H01L2100
摘要： A method for making a microstructure assembly, the method including the steps of providing a first substrate and a second substrate; depositing an electrically conductive material on the second substrate; contacting the second substrate carrying the electrically conductive material with the first substrate; and then supplying current to the electrically conductive material to locally elevate the temperature of said electrically conductive material and cause formation of a bond between the first substrate and the second substrate.

8. 发明授权

US5377524A Self-testing capacitive pressure transducer and method 失效
标题翻译：自检电容式压力传感器及方法
公开(公告)号：US5377524A
公开(公告)日：1995-01-03
申请号：US902328
申请日：1992-06-22
申请人： Kensall D. Wise , Steve T. Cho
发明人： Kensall D. Wise , Steve T. Cho
IPC分类号： G01F1/38 , G01F1/50 , G01F7/00 , G01F25/00 , G01L9/00 , G01L9/12
CPC分类号： G01F1/383 , G01F1/50 , G01F25/0007 , G01F7/005 , G01L27/007 , G01L9/0073 , G01L9/12
摘要： A high-performance switched-capacitor circuit for electronic read-out of a pressure sensor-based ultrasensitive microflow transducer. The microflow transducer uses a differential capacitive pressure sensor to measure flow. Read-out electronics associated with the transducer feature a clocking speed of 100 KHz and drive loads up to 35 pF. The read-out electronics include a high DC gain that nulls out stray input capacitance, which is beneficial for the multichip realization of the microflow transducer disclosed herein. The uncompensated linearity of the overall read-out electronics is 10 bits, and the pressure/flow resolution is 12 bits. An ultrasensitive membrane associated with the pressure sensor does not respond to a pulsed waveform for frequencies above 50 KHz. But for lower frequencies, it deflects in response to the time-average voltage applied across the capacitor plates of the pressure sensor. A self-test mode is provided which employs an extremely long pre-charge pulse. An integrated flowmeter package including transducer and circuitry, and a second circuit for extending the range of the microflowmeter circuitry are also disclosed.
摘要翻译：一种高性能开关电容电路，用于电子读出基于压力传感器的超灵敏微流量传感器。微流量传感器使用差分电容式压力传感器来测量流量。与传感器相关的读出电子器件的时钟速度为100 KHz，驱动负载高达35 pF。读出的电子器件包括一个高直流增益，使杂散输入电容无效，这有利于本文公开的微流量变换器的多芯片实现。整体读出电子元件的无补偿线性度为10位，压力/流量分辨率为12位。与压力传感器相关联的超灵敏膜对于频率高于50KHz的脉冲波形不起作用。但是对于较低的频率，其响应于施加在压力传感器的电容器板上的时间平均电压而偏转。提供了一种使用非常长的预充电脉冲的自检模式。还公开了一种包括换能器和电路的集成流量计封装以及用于扩展微流量计电路范围的第二电路。

9. 发明授权

US5100479A Thermopile infrared detector with semiconductor supporting rim 失效
标题翻译：具有半导体支撑边缘的热电偶红外探测器
公开(公告)号：US5100479A
公开(公告)日：1992-03-31
申请号：US723806
申请日：1991-07-01
申请人： Kensall D. Wise , Khalil Najafi
发明人： Kensall D. Wise , Khalil Najafi
IPC分类号： G01J5/12 , H01L35/08 , H01L35/34
CPC分类号： H01L35/08 , G01J5/12 , H01L35/34 , G01J2005/123
摘要： A thermopile detector is disclosed consisting of a semiconductor supporting rim which is doped across all of the rim. The rim supports a series of polycrystalline silicon and metal thermocouples. The fully doped semiconductor area serves as an etch stop for a single-sided etch which eliminates the need for front-to-back alignment of the device. The semiconductor doped rim also serves as a good thermal conductor for supporting the cold junctions. The hot junctions of the thermocouples may be supported by a thin dielectric membrane spanning the device and the cold junctions are formed on the doped rim. The thin dielectric window provides thermal isolation between the semiconductor rim and the center of the window where the hot junctions are located. The thermocouple material layers may be stacked to enable greater thermocouple density on the device. Refractory metals may be employed as the thermocouple metal, to increase sensitivity.
摘要翻译：公开了一种热电堆检测器，其由半导体支撑边缘组成，半导体支撑边缘掺杂在所有的边缘上。边缘支撑一系列多晶硅和金属热电偶。完全掺杂的半导体区域用作单面蚀刻的蚀刻停止，其消除了对器件的前后对准的需要。半导体掺杂边缘也用作支持冷接点的良好导热体。热电偶的热接头可以由横跨该器件的薄电介质膜支撑，并且在掺杂的边缘上形成冷接头。薄介电窗口提供半导体边缘与热接头所在窗口中心之间的热隔离。可以堆叠热电偶材料层，以使器件上的热电偶密度更高。可以使用耐火金属作为热电偶金属，以增加灵敏度。

10. 发明授权

US5059543A Method of manufacturing thermopile infrared detector 失效
标题翻译：制造热电堆红外探测器的方法
公开(公告)号：US5059543A
公开(公告)日：1991-10-22
申请号：US586520
申请日：1990-09-21
申请人： Kensall D. Wise , Khalil Najafi
发明人： Kensall D. Wise , Khalil Najafi
IPC分类号： G01J5/12 , H01L35/08 , H01L35/34
CPC分类号： H01L35/08 , G01J5/12 , H01L35/34 , G01J2005/123 , Y10S148/135 , Y10S257/93
摘要： A thermopile detector is disclosed consisting of a semiconductor supporting rim which is doped across all of the rim. The rim supports a series of polycrystalline silicon and metal thermocouples. The fully doped semiconductor area serves as an etch stop for a single-sided etch which eliminates the need for front-to-back alignment of the device. The semiconductor doped rim also serves as a good thermal condutor for supporting the cold junctions. The hot junctions of the thermocouples may be supported by a thin dielectric membrane spanning the device and the cold junctions are formed on the doped rim. The thin dielectric window provides thermal isolation between the semiconductor rim and the center of the window where the hot junctions are located. The thermocouple material layers may be stacked to enable greater thermocouple denisty on the device. Refractory metals may be employed as the thermocouple metal, to increase sensitivity.
摘要翻译：公开了一种热电堆检测器，其由半导体支撑边缘组成，半导体支撑边缘掺杂在所有的边缘上。边缘支撑一系列多晶硅和金属热电偶。完全掺杂的半导体区域用作单面蚀刻的蚀刻停止，其消除了对器件的前后对准的需要。半导体掺杂的边缘也用作支持冷接点的良好的热调节器。热电偶的热接头可以由横跨该器件的薄电介质膜支撑，并且在掺杂的边缘上形成冷接头。薄介电窗口提供半导体边缘与热接头所在窗口中心之间的热隔离。可以堆叠热电偶材料层，以使器件上的热电偶更加牢固。可以使用耐火金属作为热电偶金属，以增加灵敏度。

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