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1. 发明授权

US5053383A Method of reducing critical current density of oxide superconductors by radiation damage 失效
标题翻译：通过辐射损伤降低氧化物超导体关键电流密度的方法
公开(公告)号：US5053383A
公开(公告)日：1991-10-01
申请号：US174577
申请日：1988-03-29
申请人： Kenneth T. Short , Alice E. White
发明人： Kenneth T. Short , Alice E. White
IPC分类号： G01R33/035 , H01B13/00 , H01L39/22 , H01L39/24
CPC分类号： H01L39/249 , H01L39/2496 , Y10S505/701 , Y10S505/702 , Y10S505/73
摘要： The critical current density J.sub.c of a superconductive oxide film can be tailored, without substantial change in the critical temperature T.sub.c (R.dbd.0), by introduction of radiation damage into the superconductor. Exemplarily, this is done by exposure to energetic (e.g., 1 MeV) ions. The ability to tailor J.sub.c permits optimization of SQUIDS and other thin film devices, and makes it possible to produce superconductive interconnects that comprise "fuses" or current limiters.

2. 发明授权

US4749660A Method of making an article comprising a buried SiO.sub.2 layer 失效
标题翻译：制造包含埋置SiO 2层的制品的方法
公开(公告)号：US4749660A
公开(公告)日：1988-06-07
申请号：US935273
申请日：1986-11-26
申请人： Kenneth T. Short , Alice E. White
发明人： Kenneth T. Short , Alice E. White
IPC分类号： H01L21/02 , H01L21/265 , H01L21/76 , H01L21/762 , H01L27/12 , H01L29/78 , H01L29/786 , H01L21/20
CPC分类号： H01L21/76264 , H01L21/26533 , H01L21/76267 , H01L21/76283
摘要： We have discovered that high quality subcritical SIMOX silicon-on-insulator wafers can be produced by a method that comprises a randomizing implant followed by an appropriate heat treatment. In a preferred embodiment, the inventive method comprises, in succession, a subcritical oxygen implant (nominal wafer temperature 1200.degree. C.) anneal, a randomizing implant (.about.5.times.10.sup.14 Si/cm.sup.2, nominal wafer temperature
摘要翻译：我们已经发现，可以通过包括随机化植入物然后进行适当热处理的方法来生产高质量亚临界SIMOX绝缘硅硅片。在优选实施例中，本发明的方法依次包括进入（100）Si晶片的亚临界氧注入（标称晶片温度<350℃），低温（500-73℃）退火，高温（> 1200℃）退火，随机化植入（DIFFERENCE 5×10 14 Si / cm 2，标称晶片温度<100℃）和低温退火（标称晶片温度在500至700℃之间）。所得到的掩埋SiO 2层通常相对较薄（例如，60nm），化学计量的，连续的并且基本上不含Si夹杂物，并且Si覆盖层通常具有器件质量且基本上不含双胞胎，具有最小差异3％。

3. 发明授权

US5367589A Optical fiber package 失效
标题翻译：光纤包装
公开(公告)号：US5367589A
公开(公告)日：1994-11-22
申请号：US141889
申请日：1993-10-22
申请人： William M. MacDonald , Victor Mizrahi , Kenneth T. Short
发明人： William M. MacDonald , Victor Mizrahi , Kenneth T. Short
IPC分类号： G02B6/00 , G02B6/02 , G02B6/34 , G02B6/44 , H01S3/06 , H01S3/1055
CPC分类号： G02B6/02209 , G02B6/02204
摘要： A package that protects an optical fiber from strain or controls the strain to which the fiber is subjected for a desired effect and a method for making the package are disclosed. The package is a sleeve with an internal passage in which a portion of an optical fiber is placed. The optical fiber and the sleeve are made of materials with coefficients of thermal expansion that are the same or different.If the coefficients of thermal expansion are the same, the package protects the fiber from certain strains brought about by a change in temperature that would otherwise result if the package and the fiber were made of different materials. However, by selectively mismatching the coefficients of thermal expansion of the package and the fiber, a change in temperature can be used to bring about a desired change in the wavelength of a grating written in the fiber. The optical fiber is fixed in the sleeve by epoxy or other adhesive means at least at one point in the internal passage of the sleeve.
摘要翻译：公开了一种保护光纤免受应变或控制纤维经受的应变达到期望效果的封装，以及制造封装的方法。封装是具有内部通道的套管，其中放置一部分光纤。光纤和套管由具有相同或不同热膨胀系数的材料制成。如果热膨胀系数相同，则包装可以保护纤维免受温度变化带来的某些变化，否则如果包装和纤维是由不同的材料制成的。然而，通过选择性地使封装和光纤的热膨胀系数不匹配，可以使用温度变化来引起写在光纤中的光栅的波长的期望变化。光纤通过环氧树脂或其它粘合方式至少在套筒的内部通道中的一个点固定在套筒中。

4. 发明授权

US4816421A Method of making a heteroepitaxial structure by mesotaxy induced by buried implantation 失效
标题翻译：通过隐埋植入诱导的间皮制造异质外延结构的方法
公开(公告)号：US4816421A
公开(公告)日：1989-03-28
申请号：US934160
申请日：1986-11-24
申请人： Robert C. Dynes , Kenneth T. Short , Alice E. White
发明人： Robert C. Dynes , Kenneth T. Short , Alice E. White
IPC分类号： H01L21/28 , H01L21/20 , H01L21/265 , H01L21/74 , H01L23/48 , H01L29/78
CPC分类号： H01L21/26506 , H01L21/74 , H01L21/743 , H01L23/481 , H01L2924/0002
摘要： Disclosed is a technique, termed "mesotaxy", for producing a heteroepitaxial structure comprising a layer of single crystal second material embedded in, and epitaxial with, a single crystal first material matrix. Mesotaxy comprises implantation of at least one chemical species (e.g., Co, Ni, Cr, Y or Mg) into a single crystal body (typically a semiconductor, e.g., Si or Ge) such that a buried layer rich in the implanted species is formed, and heat treating the implanted body such that a buried stoichiometric compound layer (e.g., CoSi.sub.2) is formed. Exemplarily, 3.multidot.10.sup.17 /cm.sup.2 200 keV Co ions are implanted into (100) Si nominally at 350.degree. C., followed by a heat treatment that consists of 1 hour at 600.degree. C. and 30 minutes at 1000.degree. C. The resulting buried CoSi.sub.2 layer is epitaxial with the Si matrix, has high conductivity and is of good crystalline quality. The Si overlayer is of device quality. The thus produced heteroepitaxial structure can then be used to produce semiconductor devices, e.g., MOSFETs with a buried ground plane.

5. 发明授权

US5122479A Semiconductor device comprising a silicide layer, and method of making the device 失效
标题翻译：包括硅化物层的半导体器件及其制造方法
公开(公告)号：US5122479A
公开(公告)日：1992-06-16
申请号：US683891
申请日：1991-04-11
申请人： Sarah A. Audet , Conor S. Rafferty , Kenneth T. Short , Alice E. White
发明人： Sarah A. Audet , Conor S. Rafferty , Kenneth T. Short , Alice E. White
IPC分类号： H01L21/28 , H01L21/265 , H01L21/285
CPC分类号： H01L21/28518 , H01L21/26506 , Y10S148/003
摘要： Disclosed is a method of making a Si-based semiconductor device comprising a contact region that comprises a thin (exemplarily less than 50 nm), substantially uniform silicide layer. The silicide preferably is CoSi.sub.2 or TiSi.sub.2. The method comprises implantation of the appropriate metal ions into a Si body, the dose and the body temperature selected such that substantially complete amorphization of the implant volume results. Subsequently, the Si body is subjected to an annealing treatment that results in recrystallization of the implant volume and formation of the silicide layer. The layer extends to the surface of the body and contains essentially all of the implanted metal ions. The invention can advantageously be used in conjunction with extremely shallow junctions, such as will be of interest in short (e.g.,

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