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1. 发明授权

US08089050B2 Method and apparatus for modifying a ribbon-shaped ion beam 有权
标题翻译：用于改变带状离子束的方法和装置
公开(公告)号：US08089050B2
公开(公告)日：2012-01-03
申请号：US12621689
申请日：2009-11-19
申请人： Kenneth Harry Purser , William H. Park
发明人： Kenneth Harry Purser , William H. Park
IPC分类号： H01J3/36
CPC分类号： G21K1/093 , H01J37/12 , H01J37/153 , H01J37/3171 , H01J2237/1405 , H01J2237/1534 , H01J2237/30477
摘要： A ribbon-shaped ion beam is modified using multiple coil structures on a pair of opposed ferromagnetic bars. The coil structures comprise continuous windings which have predetermined variations along the length of the bar of turns per unit length. In an example, one coil structure may have uniform turns per unit length along the bar, so that energizing the coil structures forms a magnetic field component extending across the gap between the bars with a quadrupole intensity distribution. A second coil structure may have turns per unit length varying to produce a hexapole magnetic field intensity distribution. Further coil structures may be provided to produce octopole and decapole magnetic field distributions. The coil structures may be energized to produce magnetic fields parallel to the bars which vary along the length of the bars, to twist or flatten the ribbon-shaped beam.
摘要翻译：在一对相对的铁磁条上使用多个线圈结构修改带状离子束。线圈结构包括沿着每单位长度的匝数的长度具有预定变化的连续绕组。在一个示例中，一个线圈结构可以具有沿着棒的每单位长度的均匀匝数，使得对线圈结构的通电形成一个以四极强度分布延伸穿过棒之间的间隙的磁场分量。第二线圈结构可以具有每单位长度的转弯以产生六极磁场强度分布。可以提供另外的线圈结构以产生八极和十极磁场分布。线圈结构可以被激励以产生平行于棒的磁场，其沿着杆的长度变化，以扭曲或平坦化带形梁。

2. 发明授权

US07989784B2 Ion implantation apparatus and a method 有权
标题翻译：离子注入装置及方法
公开(公告)号：US07989784B2
公开(公告)日：2011-08-02
申请号：US12494270
申请日：2009-06-30
申请人： Hilton Glavish , Geoffrey Ryding , Theodore H. Smick , Kenneth Harry Purser
发明人： Hilton Glavish , Geoffrey Ryding , Theodore H. Smick , Kenneth Harry Purser
IPC分类号： H01J37/317 , H01J37/20
CPC分类号： H01J37/3171 , H01J37/05 , H01J37/08 , H01J37/20 , H01J2237/057 , H01J2237/061 , H01J2237/082 , H01J2237/166 , H01J2237/2001 , H01J2237/2006 , H01J2237/201 , H01J2237/202
摘要： A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel. The beam is generated by an ion source providing an extracted ribbon beam having at least 100 mm major cross-sectional diameter. The ribbon beam may be passed through a 90° bending magnet which bends the beam in the plane of the ribbon. The magnet provides intensity correction across the ribbon to compensate for the dependency on the radial distance from the wheel axis of the speed at which parts of the wafers pass through the ribbon beam.
摘要翻译：用于从硅晶片剥离硅的氢离子注入机使用大的扫描轮，围绕其周边承载50个以上的晶圆并围绕一个轴线旋转。在一个实施例中，车轮的旋转轴线是固定的，并且带状的氢离子束被向下指向车轮的周缘。带状束在轮上的晶片的整个径向宽度上延伸。光束由离子源产生，提供具有至少100mm主横截面直径的抽出的带状束。带状光束可以穿过将光束弯曲在色带平面中的90°弯曲磁体。磁体在色带上提供强度校正，以补偿从轮轴的径向距离对晶片的一部分通过带状束的速度的依赖性。

3. 发明授权

US07982197B2 Ion implantation apparatus and a method for fluid cooling 有权
标题翻译：离子注入装置和流体冷却方法
公开(公告)号：US07982197B2
公开(公告)日：2011-07-19
申请号：US12494268
申请日：2009-06-30
申请人： Theodore H. Smick , Geoffrey Ryding , Kenneth Harry Purser , Joseph Daniel Gillespie
发明人： Theodore H. Smick , Geoffrey Ryding , Kenneth Harry Purser , Joseph Daniel Gillespie
IPC分类号： H01J37/317 , H01J37/20
CPC分类号： H01J37/3171 , H01J37/20 , H01J2237/184 , H01J2237/2001
摘要： A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and the wheel is formed with tensioned spokes supporting a rim carrying the wafer supports. The spokes may be used for carrying cooling fluid to and from the wafer supports. Detachable connections in the cooling fluid conduits in the vacuum chamber may comprise tandem seals with an intermediate chamber between them which can be vented outside the vacuum chamber, or independently vacuum pumped. In one embodiment, a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel.
摘要翻译：用于从硅晶片剥离硅的氢离子注入机使用大的扫描轮，围绕其周边承载50个以上的晶圆并围绕一个轴线旋转。在一个实施例中，车轮的旋转轴线是固定的，并且车轮形成有支撑承载晶片支架的轮辋的张紧轮辐。轮辐可以用于将冷却流体携带到晶片支撑件和从晶片支撑件传送冷却流体。真空室中的冷却流体管道中的可分离连接可以包括串联密封件，其间具有中间室，其可以在真空室外排气，或独立地抽真空。在一个实施例中，氢离子的带状光束被向下指向轮的外围边缘。带状束在轮上的晶片的整个径向宽度上延伸。

4. 发明申请

US20100327189A1 ION IMPLANTATION APPARATUS AND A METHOD FOR FLUID COOLING 有权
标题翻译：离子植入装置和流体冷却方法
公开(公告)号：US20100327189A1
公开(公告)日：2010-12-30
申请号：US12494268
申请日：2009-06-30
申请人： Geoffrey Ryding , Theodore H. Smick , Kenneth Harry Purser , Joseph Daniel Gillespie
发明人： Geoffrey Ryding , Theodore H. Smick , Kenneth Harry Purser , Joseph Daniel Gillespie
IPC分类号： H01J37/317 , H01J37/20 , H01J37/08 , H01J37/02
CPC分类号： H01J37/3171 , H01J37/20 , H01J2237/184 , H01J2237/2001
摘要： A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and the wheel is formed with tensioned spokes supporting a rim carrying the wafer supports. The spokes may be used for carrying cooling fluid to and from the wafer supports. Detachable connections in the cooling fluid conduits in the vacuum chamber may comprise tandem seals with an intermediate chamber between them which can be vented outside the vacuum chamber, or independently vacuum pumped. In one embodiment, a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel.
摘要翻译：用于从硅晶片剥离硅的氢离子注入机使用大的扫描轮，围绕其周边承载50个以上的晶圆并围绕一个轴线旋转。在一个实施例中，车轮的旋转轴线是固定的，并且车轮形成有支撑承载晶片支架的轮辋的张紧轮辐。轮辐可以用于将冷却流体携带到晶片支撑件和从晶片支撑件传送冷却流体。真空室中的冷却流体管道中的可分离连接可以包括串联密封件，其间具有中间室，其可以在真空室外排气，或独立地抽真空。在一个实施例中，氢离子的带状光束被向下指向轮的外围边缘。带状束在轮上的晶片的整个径向宽度上延伸。

5. 发明授权

US08044374B2 Ion implantation apparatus 有权
标题翻译：离子注入装置
公开(公告)号：US08044374B2
公开(公告)日：2011-10-25
申请号：US12494269
申请日：2009-06-30
申请人： Geoffrey Ryding , Theodore H. Smick , Kenneth Harry Purser , Hilton Glavish , Joeph Daniel Gillespie
发明人： Geoffrey Ryding , Theodore H. Smick , Kenneth Harry Purser , Hilton Glavish , Joeph Daniel Gillespie
IPC分类号： H01J37/317
CPC分类号： H01J37/20 , H01J37/05 , H01J37/08 , H01J37/3171 , H01J2237/057 , H01J2237/061 , H01J2237/082 , H01J2237/166 , H01J2237/2001 , H01J2237/2005 , H01J2237/201 , H01J2237/202
摘要： A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and the wheel is formed with tensioned spokes supporting a rim carrying the wafer supports. The spokes may be used for carrying cooling fluid to and from the wafer supports. In one embodiment, a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel.
摘要翻译：用于从硅晶片剥离硅的氢离子注入机使用大的扫描轮，围绕其周边承载50个以上的晶圆并围绕一个轴线旋转。在一个实施例中，车轮的旋转轴线是固定的，并且车轮形成有支撑承载晶片支架的轮辋的张紧轮辐。轮辐可以用于将冷却流体携带到晶片支撑件和从晶片支撑件传送冷却流体。在一个实施例中，氢离子的带状光束被向下指向轮的外围边缘。带状束在轮上的晶片的整个径向宽度上延伸。

6. 发明申请

US20110114851A1 METHOD AND APPARATUS FOR MODIFYING A RIBBON-SHAPED ION BEAM 有权
标题翻译：改造RIBBON型离子束的方法和装置
公开(公告)号：US20110114851A1
公开(公告)日：2011-05-19
申请号：US12703194
申请日：2010-02-10
申请人： Kenneth Harry Purser , William H. Park, JR.
发明人： Kenneth Harry Purser , William H. Park, JR.
IPC分类号： H01J3/26
CPC分类号： G21K1/093 , H01J37/12 , H01J37/153 , H01J37/3171 , H01J2237/1405 , H01J2237/1534 , H01J2237/30477
摘要： A ribbon-shaped ion beam having an elongate cross-section normal to a beam direction is modified by generating, at a predetermined position along the ribbon-shaped beam, a magnetic field extending in an x-direction along an x-axis. The x-direction magnetic field has a non-uniform intensity which is a desired function of x.
摘要翻译：通过在沿着带状梁的预定位置处沿着x轴在x方向上延伸的磁场产生具有垂直于光束方向的细长横截面的带状离子束。 x方向磁场具有不均匀的强度，这是x的期望函数。

7. 发明申请

US20100327181A1 ION IMPLANTATION APPARATUS 有权
标题翻译：离子植入装置
公开(公告)号：US20100327181A1
公开(公告)日：2010-12-30
申请号：US12494269
申请日：2009-06-30
申请人： Geoffrey Ryding , Theodore H. Smick , Kenneth Harry Purser , Hilton Glavish , Joeph Daniel Gillespie
发明人： Geoffrey Ryding , Theodore H. Smick , Kenneth Harry Purser , Hilton Glavish , Joeph Daniel Gillespie
IPC分类号： H01J37/20 , H01J27/00
CPC分类号： H01J37/20 , H01J37/05 , H01J37/08 , H01J37/3171 , H01J2237/057 , H01J2237/061 , H01J2237/082 , H01J2237/166 , H01J2237/2001 , H01J2237/2005 , H01J2237/201 , H01J2237/202
摘要： A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and the wheel is formed with tensioned spokes supporting a rim carrying the wafer supports. The spokes may be used for carrying cooling fluid to and from the wafer supports. In one embodiment, a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel.
摘要翻译：用于从硅晶片剥离硅的氢离子注入机使用大的扫描轮，围绕其周边承载50个以上的晶圆并围绕一个轴线旋转。在一个实施例中，车轮的旋转轴线是固定的，并且车轮形成有支撑承载晶片支架的轮辋的张紧轮辐。轮辐可以用于将冷却流体携带到晶片支撑件和从晶片支撑件传送冷却流体。在一个实施例中，氢离子的带状光束被向下指向轮的外围边缘。带状束在轮上的晶片的整个径向宽度上延伸。

8. 发明授权

US08058626B2 Method and apparatus for modifying a ribbon-shaped ion beam 有权
标题翻译：用于改变带状离子束的方法和装置
公开(公告)号：US08058626B2
公开(公告)日：2011-11-15
申请号：US12703194
申请日：2010-02-10
申请人： Kenneth Harry Purser , William H. Park
发明人： Kenneth Harry Purser , William H. Park
IPC分类号： H01J37/317 , H01J3/26 , H01L21/265
CPC分类号： G21K1/093 , H01J37/12 , H01J37/153 , H01J37/3171 , H01J2237/1405 , H01J2237/1534 , H01J2237/30477
摘要： A ribbon-shaped ion beam having an elongate cross-section normal to a beam direction is modified by generating, at a predetermined position along the ribbon-shaped beam, a magnetic field extending in an x-direction along an x-axis. The x-direction magnetic field has a non-uniform intensity which is a desired function of x.
摘要翻译：通过在沿着带状梁的预定位置处沿着x轴在x方向上延伸的磁场产生具有垂直于光束方向的细长横截面的带状离子束。 x方向磁场具有不均匀的强度，这是x的期望函数。

9. 发明申请

US20100327190A1 ION IMPLANTATION APPARATUS AND A METHOD 有权
标题翻译：离子植入装置和方法
公开(公告)号：US20100327190A1
公开(公告)日：2010-12-30
申请号：US12494270
申请日：2009-06-30
申请人： Hilton Glavish , Geoffrey Ryding , Theodore H. Smick , Kenneth Harry Purser
发明人： Hilton Glavish , Geoffrey Ryding , Theodore H. Smick , Kenneth Harry Purser
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J37/05 , H01J37/08 , H01J37/20 , H01J2237/057 , H01J2237/061 , H01J2237/082 , H01J2237/166 , H01J2237/2001 , H01J2237/2006 , H01J2237/201 , H01J2237/202
摘要： A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel. The beam is generated by an ion source providing an extracted ribbon beam having at least 100 mm major cross-sectional diameter. The ribbon beam may be passed through a 90° bending magnet which bends the beam in the plane of the ribbon. The magnet provides intensity correction across the ribbon to compensate for the dependency on the radial distance from the wheel axis of the speed at which parts of the wafers pass through the ribbon beam.
摘要翻译：用于从硅晶片剥离硅的氢离子注入机使用大的扫描轮，围绕其周边承载50个以上的晶圆并围绕一个轴线旋转。在一个实施例中，车轮的旋转轴线是固定的，并且带状的氢离子束被向下指向车轮的周缘。带状束在轮上的晶片的整个径向宽度上延伸。光束由离子源产生，提供具有至少100mm主横截面直径的抽出的带状束。带状光束可以穿过将光束弯曲在色带平面中的90°弯曲磁体。磁体在色带上提供强度校正，以补偿与轮轴的径向距离对晶圆部分通过带状束的速度的依赖性。

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