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1. 发明专利

JP2005175039A Light emitting element and substrate for mounting the same 审中-公开
标题翻译：发光元件和基板用于安装
公开(公告)号：JP2005175039A
公开(公告)日：2005-06-30
申请号：JP2003409959
申请日：2003-12-09
申请人： Kenichiro Miyahara , 健一郎宮原
发明人： MIYAHARA KENICHIRO
IPC分类号： H01L33/32 , H01L33/60 , H01L33/62 , H01L33/64 , H01L33/00
CPC分类号： H01L2224/16 , H01L2224/16145 , H01L2224/16225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/49107 , H01L2224/73265 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a substrate for mounting a light emitting element which can efficiently emit the light from the light emitting element outside thereof, and can control the direction of the light emitted outside the substrate; and to provide the light emitting element which exhibits its intrinsic emission intensity capable of controlling the intensity, and can also control the direction of emission. SOLUTION: The substrate for mounting the light emitting element is formed of a sintered material the chief of which is a ceramic material having a translucency, or of a sintered material the chief of which is a ceramic material formed with an antireflection member, or of a sintered material the chief of which is a ceramic material formed with a reflection member. By using the substrate formed of the sintered material the chief of which is a ceramic material, such a light emitting element can be materialized that can sufficiently exhibit its characteristics including the intrinsic emission intensity, can easily control the emission intensity, and can also control the direction of emission easily. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于安装能够有效地从其外部的发光元件发射光的发光元件的基板，并且可以控制在基板外部发射的光的方向; 并且提供展现其能够控制强度的本征发光强度的发光元件，并且还可以控制发射方向。解决方案：用于安装发光元件的基板由其主要是具有半透明性的陶瓷材料的烧结材料形成，或者由主要是由抗反射构件形成的陶瓷材料的烧结材料形成，或烧结材料，其主要部分是形成有反射构件的陶瓷材料。通过使用由烧结材料形成的基材，其主要材料是陶瓷材料，可以实现能够充分发挥其本征发光强度的特性的发光元件，能够容易地控制发光强度，并且还可以控制方向发射容易。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2005035864A Substrate for mounting luminous element 审中-公开
标题翻译：用于安装灯泡元件的基板
公开(公告)号：JP2005035864A
公开(公告)日：2005-02-10
申请号：JP2003345536
申请日：2003-10-03
申请人： Kenichiro Miyahara , 健一郎宮原
发明人： MIYAHARA KENICHIRO
IPC分类号： C04B35/58 , C04B35/00 , C04B35/495 , C04B35/581 , H01L33/32 , H01L33/62 , H01L33/00
CPC分类号： H01L2224/16 , H01L2224/16145 , H01L2224/45 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/49107 , H01L2924/07802 , H01L2924/15174 , H01L2924/16195 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a substrate which is used for mounting a luminous element containing, as a main component, at least one kind or more selected from gallium nitride, indium nitride, and aluminum nitride, and which enables efficient discharge of light emitted from the luminous element to the outside of the substrate and control of the direction of the emitted light discharged to the outside of the substrate. SOLUTION: It is possible to efficiently discharge the light emitted from the luminous element mounted on the substrate to the outside of the substrate and to control the direction of the emitted light discharged to the outside of the substrate by using, as the substrate for mounting the luminous element, a sintered compact containing, as a main component, a ceramic material having light transmission property or a sintered compact containing a ceramic material as a main component, on which an antireflection member or a reflection member is formed. Further, the light emitted from the luminous element and discharged to the outside of the substrate through the substrate can be a light source being mild and soft for eyes of a human body since the discharged light is likely to become scattered light. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于安装含有从氮化镓，氮化铟和氮化铝中选出的至少一种以上的作为主要成分的发光元件的基板，并且能够有效地放电从发光元件发射到基板外部的光的控制和对基板外部排出的发射光的方向的控制。解决方案：可以将从安装在基板上的发光元件发出的光有效地放电到基板的外部，并且通过使用作为基板来控制排出到基板的外部的发射光的方向用于安装发光元件的烧结体包含作为主要成分的具有透光性的陶瓷材料或包含陶瓷材料作为主要成分的烧结体，其上形成有防反射构件或反射构件。此外，从发光元件发射并通过基板排出到基板的外部的光可以是由于放电的光很可能变成散射光而对人体的眼睛温和而柔软的光源。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2006315952A Electronic element and thin-film substrate 审中-公开
标题翻译：电子元件和薄膜基板
公开(公告)号：JP2006315952A
公开(公告)日：2006-11-24
申请号：JP2006156071
申请日：2006-06-05
申请人： Kenichiro Miyahara , 健一郎宮原
发明人： MIYAHARA KENICHIRO
IPC分类号： C30B29/38 , C04B41/87 , C04B41/89 , C30B25/18 , H01L21/205 , H01L33/32 , H01S5/323
摘要： PROBLEM TO BE SOLVED: To obtain a substrate for forming a single crystal thin film composed mainly of gallium nitride, indium nitride or aluminum nitride, which consists of a sintered compact composed mainly of a ceramic material, and a thin-film substrate with the single crystal thin film formed thereon, and to provide an electronic element such as a light emitting element having excellent luminous efficiency. SOLUTION: By using, as the substrate, a sintered compact composed mainly of a ceramic material, especially translucent sintered compact, a highly crystalline single crystal thin film composed mainly of at least one member selected from gallium nitride, indium nitride and aluminum nitride is formed on the substrate. A thin-film substrate with the highly crystalline single crystal thin film formed thereon is manufactured. Further, an electronic element such as a light emitting element having excellent luminous efficiency can be manufactured by using the thin-film substrate. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了获得主要由氮化镓，氮化铟或氮化铝组成的单晶薄膜的基板，其由主要由陶瓷材料组成的烧结体和薄膜基板其上形成有单晶薄膜，并且提供具有优异的发光效率的诸如发光元件的电子元件。解决方案：通过使用主要由陶瓷材料，特别是半透明的烧结体组成的烧结体作为基板，主要由选自氮化镓，氮化铟和铝的至少一种构成的高结晶单晶薄膜在衬底上形成氮化物。制造其上形成有高结晶性单晶薄膜的薄膜基板。此外，可以通过使用薄膜基板来制造发光效率优异的诸如发光元件的电子元件。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2006282500A Substrate for forming thin film, thin film substrate, and luminescent element 审中-公开
标题翻译：用于形成薄膜，薄膜基板和发光元件的基板
公开(公告)号：JP2006282500A
公开(公告)日：2006-10-19
申请号：JP2006034753
申请日：2006-02-13
申请人： Kenichiro Miyahara , 健一郎宮原
发明人： MIYAHARA KENICHIRO
IPC分类号： C04B41/87 , C04B35/581 , C04B41/90 , C23C14/06 , C23C16/34 , C30B23/02 , C30B25/18 , C30B29/38 , H01L21/20 , H01L21/205 , H01L27/15 , H01L33/06 , H01L33/32 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a single crystal thin film composed mainly of gallium nitride, indium nitride, or aluminum nitride using a substrate consisting of a sintered compact composed mainly of a ceramic material, and a method for manufacturing a semiconductor element such as a luminescent element or the like using the substrate for forming the single crystal thin film. SOLUTION: A sintered compact composed mainly of a ceramic material having at least either crystal structure selected from among a hexagonal system and a trigonal system, especially a sintered compact having optical transparency is used as a substrate 1. A highly crystalline single crystal thin film 2 composed mainly of at least one sort selected from among gallium nitride, indium nitride and aluminum nitride is formed on the substrate 1. Furthermore, the use of the thin film substrate on which the highly crystalline single crystal thin film is formed enables the manufacture of a semiconductor element such as the luminescent element or the like which is excellent in luminous efficiency. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用主要由氮化镓，氮化铟或氮化铝组成的单晶薄膜的方法，该方法是使用由主要由陶瓷材料组成的烧结体组成的衬底，以及用于使用用于形成单晶薄膜的基板来制造诸如发光元件等的半导体元件。解决方案：使用主要由陶瓷材料构成的烧结体，其具有选自六方晶系和三角系中的至少一种晶体结构，特别是具有光学透明性的烧结体。作为基板1，使用高结晶度的单晶主要由氮化镓，氮化铟和氮化铝中的至少一种构成的薄膜2形成在基板1上。此外，通过使用其上形成有高结晶性单晶薄膜的薄膜基板，制造发光效率优异的发光元件等的半导体元件。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2005179167A Substrate for forming thin film, thin film substrate and light emitting element 审中-公开
标题翻译：用于形成薄膜，薄膜基板和发光元件的基板
公开(公告)号：JP2005179167A
公开(公告)日：2005-07-07
申请号：JP2004002352
申请日：2004-01-07
申请人： Kenichiro Miyahara , 健一郎宮原
发明人： MIYAHARA KENICHIRO
IPC分类号： C04B35/58 , C04B35/453 , C04B35/581 , C23C14/06 , C23C16/34 , C30B29/38 , H01L33/06 , H01L33/16 , H01L33/20 , H01L33/28 , H01L33/32 , H01L33/34 , H01S5/323 , H01S5/343 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To obtain a high-quality single crystal thin film essentially comprising at least one kind or more selected from gallium nitride, indium nitride and aluminum nitride, to obtain a thin film substrate furnished with the above single crystal thin film, and to obtain a light emitting element having excellent luminous efficiency. SOLUTION: By using a sintered body essentially comprising a ceramic material, in particular, a light-transmitting sintered compact as a substrate for the substrate for forming a thin film, a single crystal thin film having high crystallinity and essentially comprising at least one kind or more selected from gallium nitride, indium nitride and aluminum nitride can be formed on the substrate. The thin film substrate is furnished with a single crystal thin film having high crystallinity. The light emitting element with excellent luminous efficiency is obtained by using a sintered compact essentially comprising the above described ceramic material. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题为了获得基本上包含从氮化镓，氮化铟和氮化铝中选择的至少一种或更多种的高质量单晶薄膜，以获得具有上述单晶薄膜的薄膜基板并且获得具有优异发光效率的发光元件。解决方案：通过使用基本上包括陶瓷材料的烧结体，特别是作为用于形成薄膜的衬底的基板的透光性烧结体，具有高结晶度并且至少基本上至少包含的单晶薄膜可以在衬底上形成从氮化镓，氮化铟和氮化铝中选出的一种以上。薄膜基板配备有具有高结晶度的单晶薄膜。通过使用基本上包含上述陶瓷材料的烧结体，获得发光效率优异的发光元件。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2006290729A Thin film bonded body 审中-公开
标题翻译：薄膜粘合体
公开(公告)号：JP2006290729A
公开(公告)日：2006-10-26
申请号：JP2006065203
申请日：2006-03-10
申请人： Kenichiro Miyahara , 健一郎宮原
发明人： MIYAHARA KENICHIRO
IPC分类号： C30B29/38 , C04B35/08 , C04B35/58 , C04B35/581 , C04B41/87 , C23C16/34 , C30B25/18 , G02B6/12 , H01L33/06 , H01L33/32 , H01L33/40 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a single crystal thin film substrate which is used as a substrate for manufacturing a semiconductor element such as a light emitting element excelling in luminous efficiency, and which comprises as main components gallium nitride, indium nitride, and aluminum nitride. SOLUTION: A highly crystalline single crystal thin film comprising as the main components one or more sorts selected from among gallium nitride, indium nitride and aluminum nitride is formed by using a sintered compact composed mainly of a ceramic material, especially a translucent sintered compact. An electronic element and an electronic component are manufactured using a bonded body of the single crystal thin film and the sintered compact. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种单晶薄膜基板，其用作用于制造发光元件优良的发光元件等半导体元件的基板，其以氮化镓，氮化铟，和氮化铝。解决方案：通过使用主要由陶瓷材料组成的烧结体，特别是半透明烧结体，形成包含作为主要成分的选自氮化镓，氮化铟和氮化铝中的一种或多种的高结晶单晶薄膜紧凑。使用单晶薄膜和烧结体的结合体制造电子元件和电子部件。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2006315951A Electronic element and thin-film substrate 审中-公开
标题翻译：电子元件和薄膜基板
公开(公告)号：JP2006315951A
公开(公告)日：2006-11-24
申请号：JP2006154476
申请日：2006-06-02
申请人： Kenichiro Miyahara , 健一郎宮原
发明人： MIYAHARA KENICHIRO
IPC分类号： C30B29/38 , C23C14/06 , C23C16/34 , C30B25/18 , G02B6/12 , H01L33/16 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To obtain a substrate for forming a single crystal thin film composed mainly of gallium nitride, indium nitride or aluminum nitride, which consists of a sintered compact composed mainly of a ceramic material, and to obtain a thin-film substrate with the single crystal thin film formed thereon, and an electronic element such as a light emitting element having excellent luminous efficiency. SOLUTION: The sintered compact composed mainly of a ceramic material, especially translucent sintered compact is used as the substrate to form a highly crystalline single crystal thin film composed mainly of at least one or more kinds selected from among gallium nitride, indium nitride and aluminum nitride, on the substrate. Thus, a thin-film substrate with the highly crystalline single crystal thin film formed thereon is provided. Further, an electronic element such as a light emitting element excellent in luminous efficiency is provided by using the sintered compact composed mainly of a ceramic material. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题为了获得主要由以陶瓷材料为主体的烧结体组成的由氮化镓，氮化铟或氮化铝组成的单晶薄膜的形成用基板，在其上形成有单晶薄膜的薄膜基板，以及具有优异的发光效率的诸如发光元件的电子元件。解决方案：主要由陶瓷材料，特别是半透明的烧结体组成的烧结体用作衬底，以形成主要由选自氮化镓，氮化铟的至少一种或多种的高结晶单晶薄膜和氮化铝。因此，提供了形成有高结晶性单晶薄膜的薄膜基板。此外，通过使用主要由陶瓷材料构成的烧结体，提供发光效率优异的发光元件等电子元件。版权所有（C）2007，JPO＆INPIT

8. 发明授权

US5665473A Package for mounting a semiconductor device 失效
标题翻译：用于安装半导体器件的封装
公开(公告)号：US5665473A
公开(公告)日：1997-09-09
申请号：US527225
申请日：1995-09-12
申请人： Tokio Okoshi , Yuka Kato , Hideki Okoshi , Kenichiro Miyahara , Masakatsu Maeda
发明人： Tokio Okoshi , Yuka Kato , Hideki Okoshi , Kenichiro Miyahara , Masakatsu Maeda
IPC分类号： H01L23/057 , H01L23/495 , B32B9/00
CPC分类号： H01L23/49537 , H01L23/057 , H01L24/49 , H01L2224/45014 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/49109 , H01L2224/85205 , H01L24/45 , H01L24/48 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01041 , H01L2924/01042 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/01322 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/12042 , H01L2924/15153 , H01L2924/1517 , H01L2924/15311 , H01L2924/1532 , H01L2924/16195 , H01L2924/181 , H01L2924/19041 , H01L2924/20753 , H01L2924/30107 , H01L2924/3011 , Y10S428/901
摘要： A package for mounting a semiconductor device comprises a base plate and a conductive layer laminated onto the base plate via an adhesive layer. The modulus of elasticity at 25.degree. C. of the adhesive layer is 10 kg/mm.sup.2 or less.
摘要翻译：用于安装半导体器件的封装包括基板和通过粘合剂层层压到基板上的导电层。粘合剂层的25℃下的弹性模量为10kg / mm 2以下。

9. 发明授权

US5629559A Package for semiconductor device 失效
标题翻译：半导体器件封装
公开(公告)号：US5629559A
公开(公告)日：1997-05-13
申请号：US347484
申请日：1994-12-06
申请人： Kenichiro Miyahara
发明人： Kenichiro Miyahara
IPC分类号： H01L23/057 , H01L23/367 , H01L23/495 , H01L23/498 , H01L23/50 , H01L23/52
CPC分类号： H01L23/057 , H01L23/3675 , H01L23/49537 , H01L23/49822 , H01L23/50 , H01L24/49 , H01L2224/2919 , H01L2224/29339 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49109 , H01L2224/73265 , H01L2224/85099 , H01L2224/85203 , H01L2224/85205 , H01L24/45 , H01L24/48 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01043 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01057 , H01L2924/01058 , H01L2924/01059 , H01L2924/0106 , H01L2924/01061 , H01L2924/01063 , H01L2924/01064 , H01L2924/01065 , H01L2924/01066 , H01L2924/01067 , H01L2924/01068 , H01L2924/0107 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01322 , H01L2924/014 , H01L2924/07802 , H01L2924/09701 , H01L2924/12042 , H01L2924/12044 , H01L2924/15153 , H01L2924/1517 , H01L2924/15787 , H01L2924/16152 , H01L2924/181 , H01L2924/19041 , H01L2924/20102 , H01L2924/20753 , H01L2924/30107 , H01L2924/3011
摘要： The present invention provides a package for mounting of semiconductor device, wherein:(a) a power layer, a ground layer and a signal layer are laminated via an intermediate layer including an insulating layer,(b) the power layer and the ground layer are each constituted by an inner lead area, an outer lead area and an electro-conductive area, the inner lead area and the outer lead area being not covered with the intermediate layer and being exposed and the electro-conductive area being interposed between the inner lead area and the outer lead area and covered with the intermediate layer, and(c) substantially all of the electro-conductive area of each of the power layer and the ground layer is constituted by a planar electro-conductive member. In this package, the self-inductances of the power layer and the ground layer are low and the capacitor formed by these layers has a large capacity; therefore, the power line and ground line noise is reduced.
摘要翻译： PCT No.PCT / JP94 / 00571 Sec。 371日期1994年12月6日第 102（e）日期1994年12月6日PCT 1994年4月6日PCT PCT。公开号WO94 / 23448 日期：1994年10月13日本发明提供了一种用于安装半导体器件的封装，其中：（a）功率层，接地层和信号层经由包括绝缘层的中间层层叠，（b）功率层接地层由内引线区域，外引线区域和导电区域构成，内引线区域和外引线区域不被中间层覆盖并被露出，导电区域为插入在内引线区域和外引线区域之间并被中间层覆盖，（c）功率层和接地层中的每一个的基本上所有的导电区域由平面导电构件构成。在该封装中，功率层和接地层的自感度低，由这些层形成的电容器容量大; 因此，电力线和地线噪声减小。

10. 发明授权

US5376601A Sintered product of aluminum nitride, a process for the preparation thereof, and a baking jig using the same 失效
标题翻译：氮化铝的烧结体，其制备方法和使用其的烘烤夹具
公开(公告)号：US5376601A
公开(公告)日：1994-12-27
申请号：US116812
申请日：1993-09-07
申请人： Yoshihiro Okawa , Kenichiro Miyahara
发明人： Yoshihiro Okawa , Kenichiro Miyahara
IPC分类号： C04B35/581 , C04B35/58 , C04B35/64
CPC分类号： C04B35/581
摘要： A molded article is prepared from an AlN powder of a high purity without adding sintering assistant, baked in a nitrogen atmosphere without containing carbon, and is further heat-treated in a nitrogen atmosphere containing carbon in order to remove impurities in the sintered product. There is obtained a highly pure and dense sintered product which comprises mainly a phase of aluminum nitride, which has an average grain size of greater than 9 .mu.m, cationic metal impurities other aluminum, and Si, Fe and Ca in amounts smaller than predetermined values. The sintered product exhibits a very small creep rate when stress is applied thereto at high temperatures and is used as a material for high temperature uses such as a baking jig. Owing to its excellent anti-creeping property at high temperatures, tile product is suitably used as a structural material subject to stress at high temperatures for extended periods of time. When used as a baking jig, in particular, the sintered product does not adversely affect the molded articles and exhibits excellent durability.
摘要翻译：由不含添加烧结助剂的高纯度AlN粉末制备成型体，在不含碳的氮气气氛中进行烧成，并且在含有碳的氮气气氛中进一步热处理以除去烧结体中的杂质。获得了高纯度且致密的烧结产品，其主要包括平均粒度大于9μm的氮化铝相，阳离子金属杂质，其它铝，Si，Fe和Ca的量小于预定值。当在高温下施加应力时，烧结产品具有非常小的蠕变速率，并且用作高温用途的材料如烘烤夹具。由于其在高温下具有优异的抗蠕变性，所以瓦片产品适合用作在高温下长时间压力的结构材料。特别是作为烘烤夹具使用时，烧结体不会对成形体产生不良影响，耐久性优异。

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