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    • 2. 发明授权
    • PN-junction gate FET
    • PN结栅极FET
    • US5670804A
    • 1997-09-23
    • US501956
    • 1995-07-13
    • Toshiyuki UsagawaAkemi SawadaKenichi Tominaga
    • Toshiyuki UsagawaAkemi SawadaKenichi Tominaga
    • H01L29/417H01L29/80H01L27/088H01L31/0328
    • H01L29/41758H01L29/802Y10S257/90
    • A semiconductor device is diclosed which has a PN-junction gate field effect transistor constituting a PN-junction gate with a semiconductor layer of opposite conductivity, an undoped semiconductor layer, and an active layer by depositing sources and drains made of semiconductor layers on the active layer of uniconductivity, depositing an undoped semiconductor layer whose band gap is greater than that of the active layer on the active layer between the opposing end surfaces of the sources and drains, and depositing a semiconductor layer of opposite conductivity on the undoped semiconductor layer away from the sources and drains. In particular, the present invention is effective for an enhancement type PN-junction power FET using compound semiconductors such as GaAs and capable of running with a single power supply and for a semi-conductor device integrating the enhancement type PN-junction power FET and a high-frequency low noise amplifier mono-lithically.
    • 一种半导体器件被封闭,其具有PN结栅极场效应晶体管,其构成具有相反导电性的半导体层的PN结栅极,未掺杂的半导体层和通过在半导体层上沉积源极和漏极的有源层 沉积非掺杂半导体层的非掺杂半导体层,所述非掺杂半导体层的带隙大于源极和漏极的相对端面之间的有源层上的有源层的带隙,并且在未掺杂半导体层上沉积具有相反导电性的半导体层 来源和渠道。 特别地,本发明对于使用诸如GaAs的化合物半导体并且能够使用单个电源运行的增强型PN结功率FET以及集成增强型PN结功率FET的半导体器件和 单频高频低噪声放大器。