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    • 5. 发明授权
    • Doped diamond laser
    • 掺杂金刚石激光
    • US5504767A
    • 1996-04-02
    • US406306
    • 1995-03-17
    • Keith D. JamisonHoward K. Schmidt
    • Keith D. JamisonHoward K. Schmidt
    • H01S3/16
    • H01S3/16H01S3/163
    • A solid state laser is provided having as the laser medium diamond and an optically active dopant element which is found to lase in the solid matrix. The dopant is preferably titanium, vanadium, chromium, iron, cobalt, nickel, zinc, zirconium, niobium, cadmium, hafnium, tantalum, tungsten, rhenium, osmium, iridium, platinum, gold, mercury, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and uranium. Erbium is especially preferred. The laser medium is formed as dopants are added by ion implantation to a diamond crystal as the diamond is grown by chemical vapor deposition.
    • 提供固体激光器,其具有作为激光介质金刚石和发现在固体基质中的光学活性掺杂元素。 掺杂剂优选为钛,钒,铬,铁,钴,镍,锌,锆,铌,镉,铪,钽,钨,铼,锇,铱,铂,金,汞,铈,镨,钕,ium, 钐,铕,钆,铽,镝,钬,铒,ium,镱和铀。 铒是特别优选的。 形成激光介质,因为当金刚石通过化学气相沉积生长时,通过离子注入将掺杂剂添加到金刚石晶体。
    • 10. 发明授权
    • Traveling wave tube having multilayer carbon-based emitter
    • 具有多层碳基发射体的行波管
    • US06710534B2
    • 2004-03-23
    • US09771862
    • 2001-01-29
    • Donald E. PattersonKeith D. Jamison
    • Donald E. PattersonKeith D. Jamison
    • H01J2946
    • H01J9/025H01J1/3042H01J2201/30446
    • An electron field emission device is provided by placing a substrate in a reactor, heating the substrate and supplying a mixture of hydrogen and a carbon-containing gas at a concentration of about 8 to 13 percent to the reactor while supplying energy to the mixture of gases near the substrate for a time to grow a first layer of carbon-based material to a thickness greater than about 0.5 micrometers, subsequently reducing the concentration of the carbon-containing gas and continuing to grow a second layer of carbon-based material, the second layer being much thicker than the first layer. The substrate is subsequently removed from the first layer and an electrode is applied to the second layer. The surface of the substrate may be patterned before growth of the first layer to produce a patterned surface on the field emission device. The device is free-standing and can be used as a cold cathode in a variety of electronic devices such as cathode ray tubes, amplifiers and traveling wave tubes.
    • 通过将基板放置在反应器中,加热基板并将浓度为约8%至13%的含碳气体的混合物供应到反应器,同时向气体混合物供应能量来提供电子场发射装置 在基板附近一段时间生长第一层碳基材料至厚度大于约0.5微米,随后降低含碳气体的浓度并继续生长第二层碳基材料,第二层 层比第一层厚得多。 随后从第一层去除衬底,并将电极施加到第二层。 可以在第一层生长之前对衬底的表面进行图案化以在场发射器件上产生图案化表面。 该器件是独立的,可用作各种电子器件如阴极射线管,放大器和行波管中的冷阴极。