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1. 发明授权

US07830141B2 Film thickness measuring apparatus and film thickness measuring method 失效
标题翻译：膜厚测定装置及膜厚测定方法
公开(公告)号：US07830141B2
公开(公告)日：2010-11-09
申请号：US12319403
申请日：2009-01-07
申请人： Takashi Fujita , Toshiyuki Yokoyama , Keita Kitade
发明人： Takashi Fujita , Toshiyuki Yokoyama , Keita Kitade
IPC分类号： G01B7/06 , G01R33/12
CPC分类号： G01B7/105
摘要： Coil is made to be disposed with gap opposed to the surface of wafer, and wafer stage is made to move in X and Y direction and R and θ direction. When supplying an alternating current to coil with the frequency swept by impedance analyzer, the magnetic field made to be induced in coil will operate on the conductive film of wafer. By changing a parameter (a frequency or an angle) influencing the skin effect of the conductive film and giving the parameter to coil, the state where a magnetic field is not made to penetrate relatively the film of wafer and the state where the magnetic field is made to penetrate relatively the film can be formed. From the variation of various values corresponding to the eddy current induced based on the change of state influenced by the skin effect of the conductive film, the film thickness of wafer can be measured with sufficient accuracy.
摘要翻译：将线圈设置成与晶片表面相对的间隙，并且使晶片台在X和Y方向上移动，并且R和＆方向。当用阻抗分析仪扫描的频率向线圈提供交流电时，在线圈中感应的磁场将在晶片的导电膜上工作。通过改变影响导电膜的皮肤效应并给出线圈参数的参数（频率或角度），没有使磁场相对于晶片的膜渗透的状态和磁场为可以形成相对渗透的薄膜。根据由导电膜的皮肤效应影响的状态变化引起的涡电流对应的各种值的变化，可以以足够的精度测量晶片的膜厚度。

2. 发明授权

US07821257B2 Method and device for forecasting/detecting polishing end point and method and device for monitoring real-time film thickness 失效
标题翻译：用于预测/检测抛光终点的方法和装置以及用于监控实时胶片厚度的方法和装置
公开(公告)号：US07821257B2
公开(公告)日：2010-10-26
申请号：US12228945
申请日：2008-08-18
申请人： Takashi Fujita , Toshiyuki Yokoyama , Keita Kitade
发明人： Takashi Fujita , Toshiyuki Yokoyama , Keita Kitade
IPC分类号： G01B7/06 , B24B49/04 , G01R33/12 , B24B49/10
CPC分类号： B24B37/013
摘要： A method and device for forecasting/detecting a polishing end point and for monitoring a real-time film thickness to suppress Joule heat loss due to the eddy current to the minimum, to precisely forecast/detect a polishing end point, to precisely calculate the remaining film thickness to be removed, and polishing rate. An inductor 36 in a sensor is arranged adjacent to a predetermined conductive film 28, and a magnetic flux change induced in the conductive film 28 by a magnetic flux formed by the inductor 36 is monitored, and by use of a magnetic flux change when a film thickness becomes corresponding to skin depth in which a film thickness in polishing is determined by the material of the predetermined conductive film 28 as a factor, a magnetic flux change part to forecast a polishing end point in the magnetic flux change process is detected, and a polishing end point is forecasted from the magnetic flux change part, and a polishing rate and a remaining film thickness amount to be removed are calculated on the spot.
摘要翻译：一种用于预测/检测抛光终点并用于监测实时膜厚度以将由于涡流引起的焦耳热损失抑制到最小以精确地预测/检测抛光终点的方法和装置，以精确地计算剩余的要去除的膜厚度和抛光速率。传感器中的电感器36布置成与预定的导电膜28相邻，并且通过由电感器36形成的磁通量在导电膜28中感应的磁通量变化被监测，并且通过使用磁通量改变膜厚度对应于其中通过预定导电膜28的材料确定抛光中的膜厚度的皮肤深度，检测用于预测磁通量变化过程中的抛光终点的磁通量变化部分，并且从磁通量变化部分预测抛光终点，并且现场计算抛光速率和待除去的剩余膜厚度量。

3. 发明授权

US07795865B2 Method of forecasting and detecting polishing endpoint and the device thereof and real time film thickness monitoring method and the device thereof 有权
标题翻译：抛光终点预测与检测方法及其装置及实时膜厚监测方法及其装置
公开(公告)号：US07795865B2
公开(公告)日：2010-09-14
申请号：US11975195
申请日：2007-10-18
申请人： Takashi Fujita , Toshiyuki Yokoyama , Keita Kitade
发明人： Takashi Fujita , Toshiyuki Yokoyama , Keita Kitade
IPC分类号： G01B7/06 , B24B49/04 , B24B49/10 , G01R33/12
CPC分类号： H01L22/26 , B24B37/013 , B24B49/04 , B24B49/105 , H01L21/3212 , H01L2924/0002 , H01L2924/00
摘要： A method and device for forecasting and detecting a polishing endpoint and real time film thickness monitoring capable of suppressing to a minimum Joule heat loss due to an eddy current, and precisely forecasting and detecting the polishing endpoint, and precisely calculating a remaining film amount to be removed and a polishing rate. A high frequency inductor sensor is positioned close to the conductive film, and monitors a flux change induced in the conductive film. When a film thickness becomes a film thickness corresponding to a skin depth of the conductive film a method of calculating on the spot a polishing rate and a remaining film amount to be removed is provided.
摘要翻译：一种用于预测和检测抛光终点和实时膜厚监测的方法和装置，其能够抑制由于涡流引起的最小焦耳热损失，并精确地预测和检测抛光终点，并精确计算剩余膜量去除和抛光速率。高频电感传感器位于靠近导电膜的位置，并监测导电膜中的磁通变化。当膜厚成为与导电膜的皮肤深度相对应的膜厚时，提供了一种在现场计算抛光速率和待除去剩余膜量的方法。

4. 发明申请

US20080290865A1 Method of forecasting and detecting polishing endpoint and the device thereof and real time film thickness monitoring method and the device thereof 有权
标题翻译：抛光终点预测与检测方法及其装置及实时膜厚监测方法及其装置
公开(公告)号：US20080290865A1
公开(公告)日：2008-11-27
申请号：US11975195
申请日：2007-10-18
申请人： Takashi Fujita , Toshiyuki Yokoyama , Keita Kitade
发明人： Takashi Fujita , Toshiyuki Yokoyama , Keita Kitade
IPC分类号： G01B7/06
CPC分类号： H01L22/26 , B24B37/013 , B24B49/04 , B24B49/105 , H01L21/3212 , H01L2924/0002 , H01L2924/00
摘要： An object of the present invention is to provide a method of forecasting and detecting a polishing endpoint and the device thereof and a real time film thickness monitoring method and the device thereof capable of suppressing a Joule heat loss to the minimum due to an eddy current, and precisely forecasting and detecting the polishing endpoint, and moreover, precisely calculating a remaining film amount to be removed and a polishing rate and the like on the spot so as to be able to accurately evaluate whether the predetermined conductive film is appropriately removed.To achieve the above described object, the present invention brings an inductor in a high frequency inductor type sensor close to the predetermined conductive film, and monitors a flux change induced in the predetermined conductive film by the flux formed by the inductor 36, and based on a flux change when a film thickness during the polishing becomes a film thickness corresponding to a skin depth decided with the material of the predetermined conductive film as a factor, detects a film thickness reference point, and forecasts the polishing endpoint from this film thickness reference point, and provides a method of calculating on the spot a polishing rate and a remaining film amount to be removed.
摘要翻译：本发明的目的是提供一种预测和检测抛光终点及其装置的方法及其实时膜厚监测方法及其能够由于涡电流而将焦耳热损失抑制到最小的装置，精确地预测和检测抛光终点，并且还准确地计算待去除的剩余膜量和现场抛光速率等，以便能够准确地评估预定导电膜是否被适当地去除。为了实现上述目的，本发明使电感器在靠近预定导电膜的高频电感器型传感器中带动，并且通过由电感器36形成的磁通来监测在预定导电膜中感应的磁通量变化，并且基于当抛光期间的膜厚度变为与由预定导电膜的材料确定的皮肤深度相对应的皮肤深度的膜厚度时的通量变化，检测膜厚度参考点，并且从该膜厚参考点预测抛光终点，并且提供一种现场计算要除去的抛光速率和剩余膜量的方法。

5. 发明申请

US20080242197A1 Wafer polish monitoring method and device 有权
标题翻译：晶圆抛光监测方法及装置
公开(公告)号：US20080242197A1
公开(公告)日：2008-10-02
申请号：US12008350
申请日：2008-01-10
申请人： Takashi Fujita , Toshiyuki Yokoyama , Keita Kitade
发明人： Takashi Fujita , Toshiyuki Yokoyama , Keita Kitade
IPC分类号： B24B49/00
CPC分类号： B24B49/10 , H01L22/26
摘要： The present invention aims to provide a wafer polish monitoring method and device for detecting the end point of the polishing of a conductive film with high precision and accuracy by monitoring the variation of the film thickness of the conductive film without adverse influence of slurry or the like after the film thickness of the conductive film decreases to an extremely small film thickness defined by the skin depth. To achieve this objective, the present invention provides a wafer polish monitoring method by which a high-frequency transmission path is formed in a portion facing the conductive film on the surface of the wafer, the polishing removal state of the conductive film is evaluated based at least on the transmitted electromagnetic waves passing through the high-frequency transmission path or the reflected electromagnetic waves that are reflected without passing through the high-frequency transmission path, and the end point of the polishing removal and the point equivalent to the end point of the polishing removal are detected.
摘要翻译：本发明的目的在于提供一种晶片抛光剂监测方法和装置，其通过监测导电膜的膜厚变化而不受浆料等的不利影响，高精度和高精度地检测导电膜的抛光终点在导电膜的膜厚度降低到由皮肤深度限定的非常小的膜厚度之后。为了达到上述目的，本发明提供了一种在晶片表面上与导电膜相对的部分形成高频传输路径的晶片抛光监视方法，基于对穿过高频传输路径的透射电磁波或反射的电磁波至少不经过高频传输路径，抛光去除的终点和等同于检测到抛光去除。

6. 发明授权

US08173037B2 Wafer polish monitoring method and device 有权
标题翻译：晶圆抛光监测方法及装置
公开(公告)号：US08173037B2
公开(公告)日：2012-05-08
申请号：US12008350
申请日：2008-01-10
申请人： Takashi Fujita , Toshiyuki Yokoyama , Keita Kitade
发明人： Takashi Fujita , Toshiyuki Yokoyama , Keita Kitade
IPC分类号： H01L21/302
CPC分类号： B24B49/10 , H01L22/26
摘要： A wafer polish monitoring method and device for detecting the end point of the polishing of a conductive film with high precision and accuracy by monitoring the variation of the film thickness of the conductive film without adverse influence of slurry or the like after the film thickness of the conductive film decreases to an extremely small film thickness defined by the skin depth. A high-frequency transmission path is formed in a portion facing the conductive film on the surface of the wafer, the polishing removal state of the conductive film is evaluated based at least on the transmitted electromagnetic waves passing through the high-frequency transmission path or the reflected electromagnetic waves that are reflected without passing through the high-frequency transmission path, and the end point of the polishing removal and the point equivalent to the end point of the polishing removal are detected.
摘要翻译：一种晶片抛光剂监测方法和装置，其通过在导电膜的膜厚度之后监测导电膜的膜厚度的变化而不受浆料等的影响而高精度和精确地检测导电膜的抛光终点导电膜减少到由皮肤深度限定的非常小的膜厚度。在晶片的表面上面对导电膜的部分形成高频传输路径，至少基于通过高频传输路径的传输电磁波或导电膜的抛光去除状态来评估导电膜的抛光去除状态反射的电磁波被反射而不通过高频传输路径，并且检测抛光去除的终点和与抛光去除的终点相当的点。

7. 发明申请

US20090256558A1 Film thickness measuring apparatus and film thickness measuring method 失效
标题翻译：膜厚测定装置及膜厚测定方法
公开(公告)号：US20090256558A1
公开(公告)日：2009-10-15
申请号：US12319403
申请日：2009-01-07
申请人： Takashi Fujita , Toshiyuki Yokoyama , Keita Kitade
发明人： Takashi Fujita , Toshiyuki Yokoyama , Keita Kitade
IPC分类号： G01B7/06
CPC分类号： G01B7/105
摘要： Coil is made to be disposed with gap opposed to the surface of wafer, and wafer stage is made to move in X and Y direction and R and θ direction. When supplying an alternating current to coil with the frequency swept by impedance analyzer, the magnetic field made to be induced in coil will operate on the conductive film of wafer. By changing a parameter (a frequency or an angle) influencing the skin effect of the conductive film and giving the parameter to coil, the state where a magnetic field is not made to penetrate relatively the film of wafer and the state where the magnetic field is made to penetrate relatively the film can be formed. From the variation of various values corresponding to the eddy current induced based on the change of state influenced by the skin effect of the conductive film, the film thickness of wafer can be measured with sufficient accuracy.
摘要翻译：将线圈设置成与晶片表面相对的间隙，并且使晶片台在X和Y方向以及R和θ方向上移动。当用阻抗分析仪扫描的频率向线圈提供交流电时，在线圈中感应的磁场将在晶片的导电膜上工作。通过改变影响导电膜的皮肤效应并给出线圈参数的参数（频率或角度），没有使磁场相对于晶片的膜渗透的状态和磁场为可以形成相对渗透的薄膜。根据由导电膜的皮肤效应影响的状态变化引起的涡电流对应的各种值的变化，可以以足够的精度测量晶片的膜厚度。

8. 发明申请

US20090061733A1 Method and device for forecasting/detecting polishing end point and method and device for monitoring real-time film thickness 失效
标题翻译：用于预测/检测抛光终点的方法和装置以及用于监控实时胶片厚度的方法和装置
公开(公告)号：US20090061733A1
公开(公告)日：2009-03-05
申请号：US12228945
申请日：2008-08-18
申请人： Takashi Fujita , Toshiyuki Yokoyama , Keita Kitade
发明人： Takashi Fujita , Toshiyuki Yokoyama , Keita Kitade
IPC分类号： B24B49/00
CPC分类号： B24B37/013
摘要： [Problem to be Solved] To provide a method and device for forecasting/detecting a polishing end point and a method and device for monitoring a real-time film thickness to suppress Joule heat loss due to the eddy current to the minimum, to precisely forecast/detect an polishing end point, to precisely calculate the remaining film thickness to be removed, polishing rate and the like on the spot, and to precisely evaluate whether the predetermined conductive film is appropriately removed[Solution] In order to achieve the object, according to the present invention, there is provided a method wherein an inductor 36 in a high frequency inductor type sensor is arranged adjacent to a predetermined conductive film 28, and a magnetic flux change induced in the predetermined conductive film 28 by a magnetic flux formed of the inductor 36 is monitored, and by use of a magnetic flux change when a film thickness becomes corresponding to skin depth in which a film thickness in polishing is determined by the material of the predetermined conductive film 28 as a factor, a magnetic flux change part to forecast a polishing end point in the magnetic flux change process is detected, and an polishing end point is forecasted from the magnetic flux change part, and further a polishing rate and a remaining film thickness amount to be removed are calculated on the spot.
摘要翻译： [待解决的问题]提供一种用于预测/检测抛光终点的方法和装置，以及用于监测实时膜厚度以将由于涡流引起的焦耳热损失抑制到最小的方法和装置，以精确地预测 /检测抛光终点，精确地计算要去除的剩余膜厚度，抛光速度等，并精确评估预定导电膜是否被适当地去除[解决方案]为了实现该目的，根据在本发明中，提供了一种方法，其中将高频电感型传感器中的电感器36布置成与预定的导电膜28相邻，并且由预定的导电膜28形成的磁通量在预定的导电膜28中感应的磁通量变化监测电感器36，并且当膜厚度对应于确定研磨中的膜厚度的趋肤深度时，通过使用磁通量变化 d作为因子的预定导电膜28的材料，检测用于预测磁通变化过程中的抛光终点的磁通量变化部分，并且从磁通量变化部分预测抛光终点，并且进一步在现场计算抛光速率和待除去的剩余膜厚度。

9. 发明申请

US20080156773A1 End point detection method applying resonance phenomenon, end point detection apparatus, chemical mechanical polishing apparatus on which the detection apparatus is loaded, and semiconductor device fabricated by the chemical mechanical polishing apparatus 审中-公开
标题翻译：应用共振现象的终点检测方法，终点检测装置，装载有检测装置的化学机械研磨装置以及由化学机械研磨装置制造的半导体装置
公开(公告)号：US20080156773A1
公开(公告)日：2008-07-03
申请号：US11904374
申请日：2007-09-27
申请人： Keita Kitade , Osamu Matsushita , Takashi Fujita , Toshiyuki Yokoyama
发明人： Keita Kitade , Osamu Matsushita , Takashi Fujita , Toshiyuki Yokoyama
IPC分类号： C23F1/00
CPC分类号： B24B37/013 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： To provide an end point detection method applying a resonance phenomenon, an end point detection apparatus, and a chemical mechanical polishing apparatus on which the detection apparatus is loaded for monitoring variation in the thickness of an electrically conductive film in real time, reliably detecting a polishing end point of the electrically conductive film at high accuracy, without generating noise, low power consumption, and capable of reducing the cost.In order to achieve above described objects, the present invention provides an end point detection method applying a resonance phenomenon in which a polishing end point is detected when the electrically conductive film is polished and removed to an appropriate thickness, wherein a sensor 37 composed of an oscillation circuit of the Colpitts type or the like having a planar inductor and a concentrated constant capacitor is used, and the variation in the thickness of the electrically conductive film is monitored in real time from the variation in the oscillation frequency of the sensor 37 caused along with the variation in the thickness of the electrically conductive film opposed to the planar inductor.
摘要翻译：为了提供应用共振现象的终点检测方法，终点检测装置和化学机械抛光装置，其上装有检测装置以实时监测导电膜的厚度的变化，可靠地检测抛光导电膜的终点高精度，不产生噪声，低功耗，并且能够降低成本。为了实现上述目的，本发明提供一种应用共振现象的端点检测方法，其中当导电膜被抛光并去除到适当的厚度时，其中检测到抛光终点，其中传感器37由使用具有平面电感器和集中恒定电容器的Colpitts型等的振荡电路，并且根据传感器37的振荡频率的变化实时监测导电膜的厚度变化导电膜的厚度与平面电感器相对的变化。

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