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1. 发明授权

US07933189B2 Focus optical system and optical disc master exposure apparatus 有权
标题翻译：聚焦光学系统和光盘主曝光设备
公开(公告)号：US07933189B2
公开(公告)日：2011-04-26
申请号：US12423911
申请日：2009-04-15
申请人： Takeshi Omori , Takaaki Kassai , Kenji Maebara , Keiji Fujita , Hiroaki Ashiwa
发明人： Takeshi Omori , Takaaki Kassai , Kenji Maebara , Keiji Fujita , Hiroaki Ashiwa
IPC分类号： G11B7/00
CPC分类号： G11B7/0909 , G11B7/261
摘要： In a focus optical system for optical discs or optical disc master exposure apparatuses, a relative positional relation between a cylindrical lens and a 4-division detector in an astigmatic optical system is adjust so that an interference fringe appearing in reflected light derived from an optical disc master is made to be incident on a dead zone of the 4-division detector. Thus, an astigmatic focus servo free from effects of variations in a focus error signal due to the interference fringe is realized. As a result of this, effects of the interference fringe appearing in the reflected light derived from an optical disc or optical disc master can be suppressed.
摘要翻译：在用于光盘或光盘主曝光装置的聚焦光学系统中，调整像散光学系统中的柱面透镜和4分辨率检测器之间的相对位置关系，使得出现在来自光盘的反射光中的干涉条纹主人被发现在四分之一检测器的死区。因此，实现了不受干涉条纹引起的聚焦误差信号变化影响的像散聚焦伺服。结果，可以抑制出现在从光盘或光盘母盘导出的反射光中的干涉条纹的影响。

2. 发明授权

US6087539A Process for producing an ether compound 失效
标题翻译：醚化合物的制造方法
公开(公告)号：US6087539A
公开(公告)日：2000-07-11
申请号：US930585
申请日：1997-10-20
申请人： Hirotaka Yamasaki , Akihisa Ogawa , Shigeru Kamimori , Yoshikazu Hirao , Keiji Fujita , Tokuyuki Yoshimoto
发明人： Hirotaka Yamasaki , Akihisa Ogawa , Shigeru Kamimori , Yoshikazu Hirao , Keiji Fujita , Tokuyuki Yoshimoto
IPC分类号： C07C41/28 , C08F8/04 , C07C43/11
CPC分类号： C08F8/04 , C07C41/28
摘要： A process for producing an ether compound represented by the general formula (II) or (III): ##STR1## wherein R.sup.1 and R.sup.2 represent each an alkyl group or a cycloalkyl group and n represents an integer of 1 to 50, which comprises bringing an acetal compound represented by the general formula (I): ##STR2## into reaction with hydrogen in the presence of a solid catalyst comprising (A) nickel in an amount corresponding to 10 to 70% by weight of metallic nickel, and (B) at least one compound selected from the group consisting of oxides of silicon, aluminum, magnesium, titanium, and zirconium; and synthetic or natural inorganic oxides containing one or more of these oxides as the constituents thereof. A vinyl ether polymer having a terminal ether group can be obtained with a good yield without causing corrosion of the apparatus used for the reaction.
摘要翻译： PCT No.PCT / JP96 / 01056 Sec。 371日期：1997年10月20日 102（e）1997年10月20日日期PCT 1996年4月18日PCT PCT。出版物WO96 / 33154 日期：1996年10月24日由通式（II）或（III）表示的醚化合物的制造方法：其中，R1和R2各自表示烷基或环烷基，n表示1〜50的整数，将由通式（I）表示的缩醛化合物与氢反应，在固体催化剂存在下反应，所述固体催化剂包含（A）相当于金属镍的10至70重量％的镍，和（B）至少一种选自硅，铝，镁，钛和锆的氧化物的化合物; 和含有这些氧化物中的一种或多种的合成或天然无机氧化物作为其组成。可以以良好的收率获得具有末端醚基的乙烯基醚聚合物，而不会引起用于反应的装置的腐蚀。

3. 发明授权

US5748288A Lighting assembly, exposure apparatus and exposure method employing the lighting assembly 失效
标题翻译：照明组件，曝光装置和采用照明组件的曝光方法
公开(公告)号：US5748288A
公开(公告)日：1998-05-05
申请号：US613027
申请日：1996-03-08
申请人： Hiroyuki Nagano , Takashi Inoue , Hiroshi Yamashita , Takeo Sato , Keiji Fujita
发明人： Hiroyuki Nagano , Takashi Inoue , Hiroshi Yamashita , Takeo Sato , Keiji Fujita
IPC分类号： G03F7/20
CPC分类号： G03F7/70075 , G03F7/7035 , G03F7/70358 , G03F7/70691
摘要： The present invention provides spot-illumination of a specific size having sufficiently homogeneous light intensity distribution, with a small and inexpensive apparatus. A lighting assembly condenses the light from light source 1 with condensing-reflecting member 2. An optical integrator 3 receives at its one end the light via condensing-reflecting member 2 and emits from the other end after making the light intensity distribution homogeneous A projection lens system 4 projects the emitting surface of optical integrator 3 onto an emitted surface. By shifting the relative positioning between the lighting assembly and the substrate 11, and adjusting the distance between the substrate 11 and the mask 12, which stores a pattern to be formed, a specified area of the exposure surface 11a is scanned and exposed to have a mask pattern transcribed on the exposure surface 11a.
摘要翻译：本发明提供具有足够均匀的光强度分布的特定尺寸的点照射，并且具有小而便宜的装置。照明组件将来自光源1的光与会聚反射构件2聚光。光学积分器3在其一端接收经由会聚反射构件2的光，并在使光强分布均匀后从另一端发射。投影透镜系统4将光学积分器3的发射表面投影到发射表面上。通过移动照明组件和基板11之间的相对定位，并且调整存储要形成的图案的基板11和掩模12之间的距离，曝光表面11a的指定区域被扫描并暴露以具有掩模图案在曝光表面11a上转录。

4. 发明授权

US4067827A Process for producing expandable beads of polymethyl methacrylate 失效
标题翻译：聚甲基丙烯酸甲酯发泡珠的制备方法
公开(公告)号：US4067827A
公开(公告)日：1978-01-10
申请号：US743434
申请日：1976-11-19
申请人： Yoshinari Takano , Keiji Fujita , Yasuo Teraoka , Masahiro Nishida , Ryoichi Fujitani , Yaichi Kuratomo
发明人： Yoshinari Takano , Keiji Fujita , Yasuo Teraoka , Masahiro Nishida , Ryoichi Fujitani , Yaichi Kuratomo
IPC分类号： C08J9/00 , C08J9/20
CPC分类号： C08J9/20 , C08J9/0023 , C08J9/0061 , C08J2333/12
摘要： A process for improving the production of polymethyl methacrylate beads or copolymeric methyl methacrylate and vinyl beads wherein the monomer is polymerized in the presence of a foaming agent and foaming agent stabilizer and within an atmosphere of inert gas, such as nitrogen, at a pressure of at least 4 kg/cm.sup.2.G. The polymerizatin is pressurized after the reaction has proceeded to a conversion ratio of from 30 to 70%. The process essentially eliminates aggregation and "sticking together" of the beads produced thereby.
摘要翻译：一种用于改进聚甲基丙烯酸甲酯珠或共聚甲基丙烯酸甲酯和乙烯珠的生产方法，其中单体在发泡剂和发泡剂稳定剂的存在下在惰性气体如氮气的气氛中在压力为至少4公斤/厘米2。在反应进行到30至70％的转化率之后，聚合物加压。该方法基本上消除了由此产生的珠的聚集和“粘在一起”。

5. 发明申请

US20090156002A1 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE AND MANUFACTURING APPARATUS FOR SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件的制造方法和半导体器件的制造设备
公开(公告)号：US20090156002A1
公开(公告)日：2009-06-18
申请号：US12331199
申请日：2008-12-09
申请人： Keiji Fujita , Hisashi Kaneko
发明人： Keiji Fujita , Hisashi Kaneko
IPC分类号： H01L21/443 , C23C16/44
CPC分类号： H01L21/02271 , C23C16/36 , C23C16/509 , H01J37/32091 , H01J37/3266 , H01L21/02167 , H01L21/022 , H01L21/02274 , H01L21/312 , H01L21/3185 , H01L21/76834 , H01L21/76883
摘要： A wafer is placed on a lower electrode disposed in a reaction chamber; process gas is introduced into the reaction chamber; a magnetic field is applied at a position spaced from a surface of the wafer to be processed; plasma is generated by applying a high-frequency voltage between the lower electrode and an upper electrode disposed to face the lower electrode; the magnetic field is removed after the plasma is stabilized; and the wafer is plasma-processed.
摘要翻译：将晶片放置在设置在反应室中的下电极上; 工艺气体被引入反应室; 在与要处理的晶片的表面间隔开的位置处施加磁场; 通过在下电极和设置为面对下电极的上电极之间施加高频电压来产生等离子体; 等离子体稳定后去除磁场; 并且晶片被等离子体处理。

6. 发明授权

US07462569B2 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07462569B2
公开(公告)日：2008-12-09
申请号：US11508230
申请日：2006-08-23
申请人： Keiji Fujita , Hideshi Miyajima
发明人： Keiji Fujita , Hideshi Miyajima
IPC分类号： H01L21/31 , H01L21/00 , B08B6/00 , B05C5/02 , H05H1/24 , C23C8/00
CPC分类号： H01L21/02351 , H01L21/02118 , H01L21/02164 , H01L21/02271 , H01L21/02282 , H01L21/312
摘要： A method of manufacturing a semiconductor device bakes a first semiconductor substrate on which a sacrifice film is formed in a reaction chamber to preliminarily coat an inner wall of the reaction chamber with a component of a gas generated by the sacrifice film, and bakes a second semiconductor substrate on which a predetermined film including the same component as that of the sacrifice film is formed in the preliminarily coated reaction chamber, while irradiating electron beams on the predetermined film to change quality of the predetermined film.
摘要翻译：制造半导体器件的方法在反应室中烘烤形成有牺牲膜的第一半导体衬底，以牺牲膜产生的气体成分预先涂覆反应室的内壁，并烘烤第二半导体在预先涂布的反应室中形成具有与牺牲膜相同成分的预定膜的基板，同时在预定膜上照射电子束以改变预定膜的质量。

7. 发明申请

US20080216746A1 Method of manufacturing semiconductor device 失效
公开(公告)号：US20080216746A1
公开(公告)日：2008-09-11
申请号：US11508230
申请日：2006-08-23
申请人： Keiji Fujita , Hideshi Miyajima
发明人： Keiji Fujita , Hideshi Miyajima
IPC分类号： C23C16/48
CPC分类号： H01L21/02351 , H01L21/02118 , H01L21/02164 , H01L21/02271 , H01L21/02282 , H01L21/312
摘要： A method of manufacturing a semiconductor device bakes a first semiconductor substrate on which a sacrifice film is formed in a reaction chamber to preliminarily coat an inner wall of the reaction chamber with a component of a gas generated by the sacrifice film, and bakes a second semiconductor substrate on which a predetermined film including the same component as that of the sacrifice film is formed in the preliminarily coated reaction chamber, while irradiating electron beams on the predetermined film to change quality of the predetermined film.

8. 发明授权

US07129175B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07129175B2
公开(公告)日：2006-10-31
申请号：US10726678
申请日：2003-12-04
申请人： Hideshi Miyajima , Kazuyuki Higashi , Keiji Fujita , Toshiaki Hasegawa , Kiyotaka Tabuchi
发明人： Hideshi Miyajima , Kazuyuki Higashi , Keiji Fujita , Toshiaki Hasegawa , Kiyotaka Tabuchi
IPC分类号： H01L21/302 , H01L21/31 , H01L21/311
CPC分类号： H01L21/02312 , H01L21/02126 , H01L21/02167 , H01L21/022 , H01L21/02274 , H01L21/0231 , H01L21/3105 , H01L21/31144 , H01L21/3148 , H01L21/31633 , H01L21/76801 , H01L21/76807 , H01L21/76825 , H01L21/76826
摘要： A semiconductor device manufacturing method comprises forming a first insulating film including silicon, carbon, nitrogen, and hydrogen above a substrate in a first chamber, carrying the substrate into a second chamber other than the first chamber, and discharging a rare gas in the second chamber, and forming a second insulating film including silicon, carbon, oxygen, and hydrogen above the first insulating film after the discharging the rare gas.
摘要翻译：半导体器件制造方法包括在第一室中在衬底上形成包括硅，碳，氮和氢的第一绝缘膜，将衬底运送到除了第一室之外的第二室中，并且在第二室中排出稀有气体并且在排出稀有气体之后，在第一绝缘膜上形成包括硅，碳，氧和氢的第二绝缘膜。

9. 发明申请

US20090262634A1 FOCUS OPTICAL SYSTEM AND OPTICAL DISC MASTER EXPOSURE APPARATUS 有权
标题翻译：聚焦光学系统和光盘主曝光装置
公开(公告)号：US20090262634A1
公开(公告)日：2009-10-22
申请号：US12423911
申请日：2009-04-15
申请人： Takeshi OMORI , Takaaki KASSAI , Kenji MAEBARA , Keiji FUJITA , Hiroaki ASHIWA
发明人： Takeshi OMORI , Takaaki KASSAI , Kenji MAEBARA , Keiji FUJITA , Hiroaki ASHIWA
IPC分类号： G11B7/135
CPC分类号： G11B7/0909 , G11B7/261
摘要： In a focus optical system for optical discs or optical disc master exposure apparatuses, a relative positional relation between a cylindrical lens and a 4-division detector in an astigmatic optical system is adjust so that an interference fringe appearing in reflected light derived from an optical disc master is made to be incident on a dead zone of the 4-division detector. Thus, an astigmatic focus servo free from effects of variations in a focus error signal due to the interference fringe is realized. As a result of this, effects of the interference fringe appearing in the reflected light derived from an optical disc or optical disc master can be suppressed.
摘要翻译：在用于光盘或光盘主曝光装置的聚焦光学系统中，调整像散光学系统中的柱面透镜和4分辨率检测器之间的相对位置关系，使得出现在来自光盘的反射光中的干涉条纹主人被发现在四分之一检测器的死区。因此，实现了不受干涉条纹引起的聚焦误差信号变化影响的像散聚焦伺服。结果，可以抑制出现在从光盘或光盘母盘导出的反射光中的干涉条纹的影响。

10. 发明授权

US5355814A Gasifier burner for powdered solid fuels and method for using the same 失效
标题翻译：用于粉末状固体燃料的气化炉燃烧器及其使用方法
公开(公告)号：US5355814A
公开(公告)日：1994-10-18
申请号：US8818
申请日：1993-01-25
申请人： Nobumasa Kemori , Kimiaki Utsunomiya , Hitoshi Takano , Keiji Fujita
发明人： Nobumasa Kemori , Kimiaki Utsunomiya , Hitoshi Takano , Keiji Fujita
IPC分类号： C22B5/10 , C22B13/02 , C22B19/04 , F23D1/00 , F23D1/06
CPC分类号： F23D1/00
摘要： The gasification burner of this invention capable of maintaining a high combustion rate for a long period of time comprises a combustion chamber having a ceiling with a small hole in its center, a pre-mixing pipe fitted into the small hole and having a nozzle at its top, wherein the pre-mixing pipe and the combustion chamber are concentric, and the spread angle of the gas flow sprayed from the end of the pre-mixing pipe is between 10 and 40 degrees, so that the relationship between the bottom of the combustion chamber and the conical gas flow is regulated by keeping a good balance between the gasification rate of the powdered coke and the life of the combustion chamber.
摘要翻译：能够长时间保持高燃烧率的本发明的气化燃烧器包括燃烧室，其中心具有一个具有小孔的天花板，一个装在小孔中的预混合管，并在其中具有一个喷嘴顶部，其中预混合管和燃烧室是同心的，并且从预混合管的端部喷射的气流的扩展角在10和40度之间，使得燃烧的底部之间的关系通过保持粉末状焦炭的气化速率和燃烧室的寿命之间的良好平衡来调节锥形气体流量。

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